STPS1L30U - STMicroelectronics - Datasheet.Directory

STPS1L30A/U

August 1999 - Ed: 4A

LOW DROP POWER SCHOTTKY RECTIFIER

IF(AV) 1 A

VRRM 30 V

Tj ( max) 150 °C

VF ( max) 0.3 V

MAIN PRODUCT CHA RACTERISTICS

VERY LOW FORWA RD VOLTAGE DRO P FOR

LESS POWER DISSIPATION

OPTIMIZED CONDUCTION/REVERSE LOSSES

TRADE-OFF WHICH MEANS THE HIGHEST

YIELD IN THE APPLICATIONS

SURFACE M OUNT MINIAT URE P A CKAG E

FEAT URES AND BENE FITS

Single Schottky rectifier suited to Switched Mode

Power Supplies and high frequency DC to DC con-

verters, freewheel diode and integrated circuit

latch up protection.

Packaged in SMA and SMB, this device is espe-

cially intended for use in parallel with MO SFETs in

synchronous rectification.

DESCRIPTION

SMB

STPS1L30U

JED EC DO-214AA

Symbol Parameter Value Unit

VRRM Repetitive peak reverse voltage 30 V

IF(RMS) RMS forward current 10 A

IF(AV) Average forward current TL = 135° C δ = 0.5 1 A

IFSM S urge non repetitive forward current tp = 10 ms Sinusoidal 75 A

IRRM Repetitive peak reverse current tp = 2 µs F = 1kHz square 1 A

IRSM Non repetitive peak reverse current tp = 100 µs square 1 A

Tstg Storage temperature range - 65 to + 150 °C

Tj Maximum oper ating junction t emperature * 150 °C

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

ABSOLUTE RATINGS (limiting values)

SMA

STPS1L30A

JED EC DO-214AC

* :

dPtot

dTj

< 1

Rth

(

−

) thermal runaway condition for a diode on its own heatsink

1/5

Symbol Parameter Value Unit

Rth (j-l) Junction to lead SMA 30 °C/W

SMB 25

THERMAL RES IST ANCES

Symbol Parameters Tests Conditions Min. Typ. Max. Unit

IR * Reverse leakage Current Tj = 25°CV

= VRRM 200 µA

Tj = 100°C615mA

* Forward Voltage drop Tj = 25°CI

= 1 A 0.395 V

Tj = 125°C0.260.3

Tj = 25°CI

= 2 A 0.445

Tj = 125° C 0.325 0.375

STATIC E LE CTR ICAL CHARA CT ERISTICS

Pulse test : * tp = 380 µs, δ < 2%

To evaluate the maximum conduction losses use the following equation :

P = 0. 225 x IF(AV) + 0.075 IF2(RMS)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

0.45

0.50

IF(av) (A)

PF(av)(W)

δ= 1

δ= 0.5

δ= 0.2

δ= 0.1

δ= 0.05

=tp/T tp

Fig. 1 : Average forward power dissipation versus

average forward current.

0 25 50 75 100 125 150

0.0

0.2

0.4

0.6

0.8

1.0

1.2 IF(av)(A)

Rth(j-a)=Rth(j-l)

Rth(j-a)=120°C/W

Rth(j-a)=100°C/W

=tp/T tp

Tamb(°C)

Fig. 2: Average forward current versus ambient

temperature (δ=0.5).

1E-3 1E-2 1E-1 1E+0

10 IM(A)

Ta=25°C

Ta=100°C

Ta=50°C

t(s)

=0.5

Fig. 3-1: Non repetitive surge peak forward cur-

rent versus overload duration (maximum values)

(SMA).

1E-3 1E-2 1E-1 1E+0

10 IM(A)

Ta=25°C

Ta=100°C

Ta=50°C

t(s)

=0.5

Fig. 3-2: Non repetitive surge peak forward cur-

rent versus overload duration (maximum values)

(SMB).

STPS1L30A/U

2/5

0 5 10 15 20 25 30

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2 IR(mA)

Tj=125°C

Tj=25°C

Tj=100°C

Tj=150°C

VR(V)

Fig. 5: Reverse leakage current versus reverse

voltage applied (typical values).

12 5102030

100

500

VR(V)

C(pF)

F=1MHz

Tj=25°C

Fig. 6: Junction capacitance versus reverse

vol tage applie d ( typical values).

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

0.10

1.00

10.00 IFM(A)

Tj=100°C

Tj=150°C Tj=25°C

VFM(V)

Fig. 7-1: Forward voltage drop v ersus forward cur-

rent (typical values, high level).

1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-a)/Rth(j-a)

=tp/T tp

Fig. 4 -1: Relat ive variation of thermal impedance

junction to ambient versus pulse duration (epoxy

printed circuit boar d, e(Cu)=35µm, recommended

pad layout) (SMB).

1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

0.0

0.2

0.4

0.6

0.8

1.0 Zth(j-a)/Rth(j-a)

tp(s)

=tp/T tp

Fig. 4-2: Rela tive variation of thermal impedance

junction to ambient versus pulse duration (epoxy

printed circuit boar d, e(Cu)=35µm, recommended

pad layout) ( SMA) .

0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60

0.0

0.5

1.0

1.5

2.0

2.5

3.0 IFM(A)

Tj=125°C

Typical values

Tj=150°C Tj=100°C

Tj=25°C

VFM(V)

Fig. 7-2: Forward voltage drop versus forward cur-

rent (maximum v alues, low lev el).

STPS1L30A/U

3/5

012345

100

120

140

S(Cu) (cm²)

Rth(j-a) (°C/W)

Fig. 8-2: Thermal resistance junction to ambient

versus copper surface under each lead (Epoxy

printed circuit board FR4, copper thickness: 35µm)

(SMA).

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

100

120

S(Cu) (cm²)

Rth(j-a) (°C/W)

Fig. 8 -1: Thermal resistance junction to ambient

versus copper surface under each lead (Epoxy

printed circuit board FR4, copper thickness:

35µm) (SMB).

PACKAGE MECHANICAL DAT A

SMA

FOOT PRINT DIMENSIONS (in millimeters)

2.40

1.65

1.45 1.45

REF.

DIMENSIONS

Millimeters Inches

Min. Max. Min. Max.

A1 1.90 2.70 0.075 0.106

A2 0.05 0.20 0.002 0.008

b 1.25 1.65 0.049 0.065

c 0.15 0.41 0.006 0.016

E 4.80 5.60 0.189 0.220

E1 3.95 4.60 0.156 0.181

D 2.25 2.95 0.089 0.116

L 0.75 1.60 0.030 0.063

STPS1L30A/U

4/5

PACKAGE MECHANICAL DAT A

SMB

REF.

DIMENSIONS

Millimeters Inches

Min. Max. Min. Max.

A1 1.90 2.45 0.075 0.096

A2 0.05 0.20 0.002 0.008

b 1.95 2.20 0.077 0.087

c 0.15 0.41 0.006 0.016

E 5.10 5.60 0.201 0.220

E1 4.05 4.60 0.159 0.181

D 3.30 3.95 0.130 0.156

L 0.75 1.60 0.030 0.063

1.52 2.75

2.3

1.52

FOOT PRINT DIMENSIONS (in millimeters)

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Ordering type Marking Package Weight Base q ty Delivery mode

STPS 1L30U G23 SMB 0.107g 2500 Tape & reel

STPS 1L30A GB 3 SMA 0.068g 5000 Tape & reel

Band indicates cathode

Epoxy m eets UL94,V0

STPS1L30A/U

5/5