Data Sheet, Doc. No. 5SYA 1420-01 04-2012 5SNA 2000J170300 ABB HiPakTM IGBT Module VCE = 1700 V IC = 2000 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance High voltage package suitable for multilevel application Maximum rated values 1) Parameter Collector-emitter voltage DC collector current Symbol VCES Conditions VGE = 0 V, Tvj min 25 C IC TC = 90 C, Tvj = 150 C Peak collector current ICM tp = 1 ms Gate-emitter voltage VGES Total power dissipation Ptot DC forward current Peak forward current -20 TC = 25 C, Tvj = 150 C IF max Unit 1700 V 2000 A 4000 A 20 V 11400 W 2000 A IFRM tp = 1 ms 4000 A Surge current IFSM VR = 0 V, Tvj = 150 C, tp = 10 ms, half-sinewave 12000 A IGBT short circuit SOA tpsc 10 s Isolation voltage Visol Junction temperature Tvj Junction operating temperature VCC = 1200 V, VCEM CHIP VGE 15 V, Tvj 1700 V 150 C 1 min, f = 50 Hz 10200 V 150 C Tvj(op) -50 150 C Case temperature TC -50 125 C Storage temperature Tstg -50 125 C 4 6 Ms Mounting torques 2) 1) 2) Base-heatsink, M6 screws Mt1 Main terminals, M8 screws 8 10 Mt2 Auxiliary terminals, M4 screws 2 3 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 for detailed mounting instructions refer to ABB Document No. 5SYA2039 Nm IGBT characteristic values 3) Parameter Symbol Collector (-emitter) breakdown voltage Collector-emitter saturation voltage 4) Conditions min V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 C 1700 VCE sat IC = 2000 A, VGE = 15 V typ V 2.0 2.3 2.6 V Tvj = 125 C 2.4 2.7 3.0 V 1 mA 40 mA 2.75 Tvj = 25 C Gate leakage current Gate-emitter threshold voltage ICES IGES VGE(TO) Gate charge Qge Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Short circuit current 3) 4) td(on) tr td(off) tf Eon Eoff ISC Characteristic values according to IEC 60747 - 9 Collector-emitter saturation voltage is given at chip level 2 5SNA 2000J170300 | Doc. No. 5SYA 1420-01 04-2012 VCE = 1700 V, VGE = 0 V VCE = 0 V, VGE = Tvj = 125 C 20 Tvj = 150 C 110 20 V, Tvj = 125 C IC = 160 mA, VCE = VGE, Tvj = 25 C IC = 2000 A, VCE = 900 V, VGE = -15 V ..15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C VCC = 900 V, IC = 2000 A, RG = 1.0 , CGE = 0 nF, VGE = 15 V, L = 100 nH, inductive load VCC = 900 V, IC = 2000 A, RG = 1.0 , CGE = 0 nF, VGE = 15 V, L = 100 nH, inductive load VCC = 900 V, IC = 2000 A, RG = 1.0 , CGE = 0 nF, VGE = 15 V, L = 100 nH, inductive load VCC = 900 V, IC = 2000 A, RG = 1.0 , CGE = 0 nF, VGE = 15 V, L = 100 nH, inductive load tpsc 10 s, VGE = 15 V, VCC = 1200 V, VCEM CHIP 1700 V Unit Tvj = 25 C Tvj = 150 C Collector cut-off current max V mA -500 500 nA 5.3 7.3 V 14 C 159 nF 13.9 nF 6.16 nF Tvj =25 C 480 ns Tvj =125 C 520 ns Tvj =150 C 530 ns Tvj =25 C 300 ns Tvj =125 C 310 ns Tvj =150 C 320 ns Tvj =25 C 1090 ns Tvj =125 C 1180 ns Tvj =150 C 1210 ns Tvj =25 C 280 ns Tvj =125 C 340 ns Tvj =150 C 350 ns Tvj =25 C 350 mJ Tvj =125 C 490 mJ Tvj =150 C 540 mJ Tvj =25 C 800 mJ Tvj =125 C 930 mJ Tvj =150 C 990 mJ Tvj =150 C 6700 A Diode characteristic values 5) Parameter Symbol Conditions min Tvj =25 C Forward voltage 6) VF Reverse recovery current Irr Recovered charge Qrr Reverse recovery time trr Reverse recovery energy 5) 6) IF = 2000 A VCC = 900 V, IF = 2000 A, VGE = 15 V, RG = 1.0 , CGE = 0 nF, di/dt = 6.3 kA/s L = 100 nH, inductive load Erec typ max Unit 1.75 2.1 V 2.15 Tvj =125 C 1.8 Tvj =150 C 1.75 V V Tvj =25 C 1320 A Tvj =125 C 1510 A Tvj =150 C 1600 A Tvj =25 C 630 C Tvj =125 C 950 C Tvj =150 C 1090 C Tvj =25 C 740 ns Tvj =125 C 1030 ns Tvj =150 C 1050 ns Tvj =25 C 500 mJ Tvj =125 C 730 mJ Tvj =150 C 830 mJ Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level Package properties 7) Parameter Symbol IGBT thermal resistance junction to case Diode thermal resistance junction to case IGBT thermal resistance Conditions min max Unit Rth(j-c)IGBT 0.011 K/W Rth(j-c)DIODE 0.018 K/W 2) case to heatsink Diode thermal resistance case to heatsink Rth(c-s)IGBT IGBT per switch, Rth(c-s)DIODE Diode per switch, grease = 1W/m x K 0.012 K/W 0.024 K/W 2) Comparative tracking index CTI Module stray inductance L grease = 1W/m x K > 600 27 CE TC =25 C Resistance, terminal-chip 2) typ RCC'+EE' nH 0.1 TC =125 C 0.15 TC =150 C 0.16 m for detailed mounting instructions refer to ABB Document No. 5SYA2039 Mechanical properties 7) Parameter Symbol Conditions Dimensions LxWxH Typical Clearance distance in air da Surface creepage distance ds Mass m 7) Package and mechanical properties according to IEC 60747 - 15 3 5SNA 2000J170300 | Doc. No. 5SYA 1420-01 04-2012 min typ 130 x 140 x 48 according to IEC 60664-1 Term. to base: 40 and EN 50124-1 Term. to term: 26 according to IEC 60664-1 and EN 50124-1 Term. to base: 64 Term. to term: 56 max Unit mm mm mm 1110 g Electrical configuration 5 7 4 6 3 2 1 Outline drawing 2) Note: all dimensions are shown in millimeters 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. 4 5SNA 2000J170300 | Doc. No. 5SYA 1420-01 04-2012 4500 4500 4000 4000 3500 3500 VCE = VGE 25 C 3000 125 C 2500 IC [A] IC [A] 3000 150 C 2500 2000 2000 1500 1500 1000 1000 500 500 150 C 25 C 125 C VGE = 15 V 0 0 0 1 2 3 4 5 5 6 7 8 VCE [V] Fig. 1 9 10 11 12 13 14 VGE [V] Typical on-state characteristics, chip level Fig. 2 4500 Typical transfer characteristics, chip level 4500 Tvj = 25 C 4000 4000 3500 3500 19 V 17 V 2500 IC [A] IC [A] 3000 19 V 17 V 2000 3000 15 V 2500 13 V 11 V 2000 9V 15 V 1500 1500 13 V 11 V 1000 1000 9V 500 500 0 0 Tvj = 150 C 0 1 2 3 4 5 0 VCE [V] Fig. 3 Typical output characteristics, chip level 5 5SNA 2000J170300 | Doc. No. 5SYA 1420-01 04-2012 1 2 3 4 VCE [V] Fig. 4 Typical output characteristics, chip level 5 6 8 3.0 VCC = 900 V VGE = 15 V RG = 1.0 ohm L = 100 nH 2.5 VCC = 900 V IC = 2000 A VGE = 15 V Tvj = 125 (150) C L = 100 nH 7 6 2.0 Eon Eon, Eoff [J] Eon, Eoff [J] 5 1.5 Eoff Tvj = 125 C Tvj = 150 C 4 3 Eon 1.0 Eoff 2 0.5 1 Tvj = 125 C Tvj = 150 C 0.0 0 0 1000 2000 3000 0 4000 5 Typical switching energies per pulse vs collector current Fig. 6 Typical switching energies per pulse vs gate resistor 10 10 VCC = 900 V IC = 2000 A VGE = 15 V Tvj = 125 C L = 100 nH 1 td(on), tr, td(off), tf [s] td(on), tr, td(off), tf [s] td(off) td(on) tf 0.1 td(off) t d(on) tr 1 tf tr VCC = 900 V VGE = 15 V RG = 1.0 ohm Tvj = 125 C L = 100 nH 0.01 0 1000 2000 3000 0.1 0 4000 Typical switching times vs collector current 6 5SNA 2000J170300 | Doc. No. 5SYA 1420-01 04-2012 5 10 RG [ohm] IC [A] Fig. 7 15 RG [ohm] IC [A] Fig. 5 10 Fig. 8 Typical switching times vs gate resistor 15 20 1000 VCC = 900 V Cies 15 100 VGE [V] C [nF] VCC = 1300 V Coes 10 10 5 Cres VGE = 0 V fOSC = 1 MHz VOSC = 50 mV IC = 2000 A Tvj = 25 C 0 1 0 Fig. 9 5 10 15 20 Vce[V] 25 30 Fig. 10 2.5 VCC 1200 V, Tvj = 150 C VGE = 15 V, RG = 1.0 ohm 2.0 ICpulse / IC 1.5 1.0 0.5 chip module 0.0 500 1000 VCE [V] Fig. 11 Turn-off safe operating area (RBSOA) 7 5SNA 2000J170300 | Doc. No. 5SYA 1420-01 04-2012 5 10 Qg [C] Typical capacitances vs collector-emitter voltage 0 0 35 1500 2000 Typical gate charge characteristics 15 2000 1000 2000 3000 RG = 0.68 ohm Tvj = 125 C Tvj = 150 C 0 0 0 RG = 0.83 ohm RG = 3.3 ohm RG = 4.7 ohm Erec RG = 1.0 ohm VCC = 900 V VGE = 15 V RG = 1.0 ohm L = 100 nH Tvj = 125 C Tvj = 150 C 0 4000 1 2 3 4 5 6 7 8 di/dt [kA/s] IF [A] Fig. 12 Qrr 500 500 Irr RG = 1.2 ohm Erec 1000 RG = 6.8 ohm 1000 RG = 10 ohm Erec [mJ], Irr [A], Qrr [C] Erec [mJ], Irr [A], Qrr [C] Qrr RG = 15 ohm 1500 1500 RG = 1.8 ohm Irr RG = 2.2 ohm VCC = 900 V IF = 2000 A Tvj = 125 (150) C L = 100 nH RG = 1.5 ohm 2000 Typical reverse recovery characteristics vs forward current Fig. 13 Typical reverse recovery characteristics vs di/dt 5000 4000 VCC 1200 V di/dt 9.3 kA/s Tvj = 150 C L = 100 nH 25 C 4000 3000 3000 2000 IR [A] IF [A] 125 C 150 C 2000 1000 1000 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 Typicial diode forward characteristics chip level 8 5SNA 2000J170300 | Doc. No. 5SYA 1420-01 04-2012 1000 VR [V] VF [V] Fig. 14 500 Fig. 15 Safe operating area diode (SOA) 1500 2000 0.1 Analytical function for transient thermal impedance: n Zth(j-c) [K/W] IGBT, DIODE R i (1 - e -t/ i ) Z th (j-c) (t) = Z th(j-c) Diode 0.01 i 1 IGBT Zth(j-c) IGBT i 1 2 3 4 Ri(K/kW) 7.59 1.80 0.743 0.369 i(ms) 202.9 20.3 2.01 0.52 Ri(K/kW) 12.6 2.89 1.30 1.26 i(ms) 210 29.6 7.01 1.49 5 0.0001 0.001 Fig. 16 0.01 0.1 t [s] 1 10 Thermal impedance vs time Related documents: 5SYA 2042 Failure rates of HiPak modules due to cosmic rays 5SYA 2043 Load - cycle capability of HiPaks 5SYA 2045 Thermal runaway during blocking 5SYA 2053 Applying IGBT 5SYA 2058 Surge currents for IGBT diodes 5SZK 9111 Specification of environmental class for HiPak Storage 5SZK 9112 Specification of environmental class for HiPak Transportation 5SZK 9113 Specification of environmental class for HiPak Operation (Industry) 5SZK 9120 Specification of environmental class for HiPak ABB Switzerland Ltd. Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg Switzerland Phone: +41 58 586 1419 Fax: +41 58 586 1306 E-Mail: abbsem@ch.abb.com Internet: www.abb.com/semiconductors We reserve the right to make technical changes or to modify the contents of this document without prior notice. We reserve all rights in this document and the information contained therein. Any reproduction or utilization of this document or parts thereof for commercial purposes without our prior written consent is forbidden. Any liability for use of our products contrary to the instructions in this document is exclude 5SNA 2000J170300 | Doc. No. 5SYA 1420-01 04-2012 DIODE 0.001