MCR08MT1 - ON Semiconductor - Datasheet.Directory

 Semiconductor Components Industries, LLC, 2000

May, 2000 – Rev. 3 1Publication Order Number:

MCR08BT1/D

MCR08B, MCR08M

Preferred Device

Sensitive Gate

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

PNPN devices designed for line powered consumer applications

such as relay and lamp drivers, small motor controls, gate drivers for

larger thyristors, and sensing and detection circuits. Supplied in

surface mount package for use in automated manufacturing.

•Sensitive Gate Trigger Current

•Blocking Voltage to 600 Volts

•Glass Passivated Surface for Reliability and Uniformity

•Surface Mount Package

•Device Marking: MCR08BT1: CR08B; MCR08MT1: CR08M, and

Date Code

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Peak Repetitive Off–State Voltage(1)

(Sine W ave, RGK = 1000 Ω,

TJ = 25 to 110°C) MCR08BT1

MCR08MT1

VDRM,

VRRM

200

600

Volts

On-State Current RMS

(All Conduction Angles; TC = 80°C) IT(RMS) 0.8 Amps

Peak Non-repetitive Surge Current

(1/2 Cycle Sine W ave, 60 Hz,

TC = 25°C)

ITSM 8.0 Amps

Circuit Fusing Considerations

(t = 8.3 ms) I2t 0.4 A2s

Forward Peak Gate Power

(TC = 80°C, t = 1.0 µs) PGM 0.1 Watts

Average Gate Power

(TC = 80°C, t = 8.3 ms) PG(AV) 0.01 Watts

Operating Junction Temperature Range TJ–40 to

+110 °C

Storage Temperature Range Tstg –40 to

+150 °C

(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant source such that the voltage

ratings of the devices are exceeded.

SCRs

0.8 AMPERES RMS

200 thru 600 VOLTS

Preferred devices are recommended choices for future use

and best overall value.

Device Package Shipping

ORDERING INFORMATION

MCR08BT1 SOT223 16mm Tape and Reel

(1K/Reel)

MCR08MT1 SOT223

http://onsemi.com

16mm Tape and Reel

(1K/Reel)

SOT–223

CASE 318E

STYLE 10

123

PIN ASSIGNMENT

Anode

Gate

Cathode

4Anode

MCR08B, MCR08M

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THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance, Junction to Ambient

PCB Mounted per Figure 1 RθJA 156 °C/W

Thermal Resistance, Junction to Tab

Measured on Anode Tab Adjacent to Epoxy RθJT 25 °C/W

Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum) TL260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Peak Repetitive Forward or Reverse Blocking Current(2)

(VAK = Rated VDRM or VRRM, RGK = 1000 Ω)T

J = 25°C

TJ = 110°C

IDRM, IRRM —

——

—10

200 µA

µA

ON CHARACTERISTICS

Peak Forward On-State Voltage(1)

(IT = 1.0 A Peak) VTM — — 1.7 Volts

Gate T rigger Current (Continuous dc)(3)

(VAK = 12 Vdc, RL = 100 Ω)IGT — — 200 µA

Holding Current(3)

(VAK = 12 Vdc, Initiating Current = 20 mA) IH— — 5.0 mA

Gate Trigger Voltage (Continuous dc)(3)

(VAK = 12 Vdc, RL = 100 Ω)VGT — — 0.8 Volts

DYNAMIC CHARACTERISTICS

Critical Rate-of-Rise of Off State Voltage

(Vpk = Rated VDRM, TC = 110°C, RGK = 1000 Ω, Exponential Method) dv/dt 10 — — V/µs

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) RGK = 1000 Ω is included in measurement.

(3) RGK is not included in measurement.

MCR08B, MCR08M

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+ Current

+ Voltage

VTM

IDRM at VDRM

Symbol Parameter

VDRM Peak Repetitive Off State Forward Voltage

IDRM Peak Forward Blocking Current

VRRM Peak Repetitive Off State Reverse Voltage

IRRM Peak Reverse Blocking Current

VTM Peak On State Voltage

IHHolding Current

Voltage Current Characteristic of SCR

Anode +

on state

Reverse Blocking Region

(off state)

Reverse Avalanche Region

Anode –

Forward Blocking Region

IRRM at VRRM

(off state)

Figure 1. PCB for Thermal Impedance and

Power Testing of SOT-223

0.079

2.0

0.079

2.0

0.059

1.5

0.091

2.3

0.091

2.3

0.472

12.0

0.096

2.44

BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR.

BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL.

MATERIAL: G10 FIBERGLASS BASE EPOXY

0.984

25.0

0.244

6.2

0.059

1.5

0.059

1.5

0.096

2.44 0.096

2.44

0.059

1.5 0.059

1.5

0.15

3.8

inches

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PAD AREA = 4.0 cm2, 50

OR 60 Hz HALFWAVE

°THERMAL RESISTANCE, ( C/W)

2.00 4.0 6.0 8.0 10

TYPICAL

MAXIMUM

123

MINIMUM

FOOTPRINT = 0.076 cm2

DEVICE MOUNTED ON

FIGURE 1 AREA = L2

PCB WITH TAB AREA

AS SHOWN

180°

110

IT(AV), A VERAGE ON-STATE CURRENT (AMPS) 0.50.40.30.20.10

50 OR 60 Hz HALFWAVE

TA, MAXIMUM ALLOW ABLE

AMBIENT TEMPERATURE ( C)°

110

100

IT(AV), A VERAGE ON-STATE CURRENT (AMPS)

110

100

Figure 2. On-State Characteristics Figure 3. Junction to Ambient Thermal

Resistance versus Copper Tab Area

Figure 4. Current Derating, Minimum Pad Size

Reference: Ambient Temperature Figure 5. Current Derating, 1.0 cm Square Pad

Reference: Ambient Temperature

FOIL AREA (cm2)vT, INST ANTANEOUS ON-STATE VOL TAGE (VOLTS)

IT, INSTANTANEOUS ON-STA TE CURRENT (AMPS)

IT(AV), A VERAGE ON-STATE CURRENT (AMPS)

Figure 6. Current Derating, 2.0 cm Square Pad

Reference: Ambient Temperature

1.0

0.1

0.01 4.01.0

110

0.5

0.30.20.10IT(AV), A VERAGE ON-STATE CURRENT (AMPS) 0.5

0.40.30.20.10

0.5

0.40.30.20.10

100

20 0.4

TA, MAXIMUM ALLOW ABLE

AMBIENT TEMPERATURE ( C)°

T(tab), MAXIMUM ALLOWABLE

TAB TEMPERATURE ( C)°

Figure 7. Current Derating

Reference: Anode Tab

180°

α = 30°

60°90°

60°

120°

60°

180°

120°

1.0 cm2 FOIL, 50 OR

60 Hz HALFWAVE

2.0 3.0

TYPICAL AT TJ = 110°C

MAX AT TJ = 110°C

MAX AT TJ = 25°C

160

140

120

100

120°

90°

60°

90°

1.0 3.0 5.0 7.0 9.0

150

130

110

α = CONDUCTION

ANGLE

50 OR 60 Hz HALFWAVE

α = CONDUCTION

ANGLE

90°

α = 30°

α = CONDUCTION

ANGLE

180°

120°

α = CONDUCTION

ANGLE

α = 30°

θJA

R , JUNCTION T O AMBIENT

TA, MAXIMUM ALLOW ABLE

AMBIENT TEMPERATURE ( C)°

MCR08B, MCR08M

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rT, TRANSIENT THERMAL RESIST ANCE

NORMALIZED

8020–40 –20 0 40 60 110

1000

100

1.0

0.7

1000100.1 IGT, GATE TRIGGER CURRENT (µA)

1.0 100 TJ, JUNCTION TEMPERATURE (°C)

VGT, GATE TRIGGER VOLTAGE (VOLTS)

0.65

0.6

0.55

0.5

0.45

0.4

0.35

0.3

VAK = 12 V

RL = 100 Ω

TJ = 25°C10

2.0

1.0

TJ, JUNCTION TEMPERATURE, (°C)

VGT, GATE TRIGGER VOLTAGE (VOLTS)

TJ, JUNCTION TEMPERATURE, (°C)

IH, HOLDING CURRENT

(NORMALIZED)

0.7

0.6

0.5

0.4

8020–40 –20 0 40 60 110

0.3

1.0

0.1

0.01 1000.10.0001

MAXIMUM A VERAGE POWER

IT(AV), A VERAGE ON-STATE CURRENT (AMPS)

1.0

0.5

0.30.20.10

0.9

0.8

0.7

0.5

0.4

0.3

0.2

0.1

0.4

0.6

Figure 8. Power Dissipation Figure 9. Thermal Response Device

Mounted on Figure 1 Printed Circuit Board

t, TIME (SECONDS)

180°

α = 30°

60°

(AV),DISSIPATION (WATTS)

00.001 0.01 1.0 10

GT, GA TE TRIGGER CURRENT (µ

RGK = 1000 Ω, RESISTOR

CURRENT INCLUDED

WITHOUT GATE RESISTOR

VAK = 12 V

RL = 100 Ω

α = CONDUCTION

ANGLE

VAK = 12 V

RL = 3.0 kΩ

90°

120°

Figure 10. Typical Gate Trigger Voltage

versus Junction Temperature Figure 11. Typical Normalized Holding Current

versus Junction Temperature

Figure 12. Typical Range of VGT

versus Measured IGT Figure 13. Typical Gate Trigger Current

versus Junction Temperature

VAK = 12 V

RL = 100 Ω

MCR08B, MCR08M

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STATIC dv/dt (V/ S)µ

HOLDING CURRENT (mA)I ,

10000

100

STATIC dv/dt (V/ S)µ

10,00010 100 1000

1.0

10000

1000

100

1.0

0.110 100 1000 10,000 100,000

CGK, GATE-CATHODE CAPACITANCE (nF)

0.1 1.0 10 100

RGK, GATE-CATHODE RESISTANCE (OHMS)

100

1.0

0.1 10001.0 RGK, GATE-CATHODE RESISTANCE (OHMS)

10 100 10,000 100,000

Figure 14. Holding Current Range versus

Gate-Cathode Resistance Figure 15. Exponential Static dv/dt versus Junction

Temperature and Gate-Cathode Termination Resistance

RGK, GATE-CATHODE RESISTANCE (OHMS)

0.01

IGT = 48 µA

TJ = 25°C

IGT = 7 µA

STATIC dv/dt (V/ S)µ

50°

75°

125°

500 V

100 V

STATIC dv/dt (V/ S)µ

GATE-CA THODE RESISTANCE (OHMS)

100 1000 10,000 100,00010

5000

500

5.0

0.5

1000

500 400 V

TJ = 110°C

50 V

5.0

10000

100

1.0

1000

500

5.0

TJ = 110°C

400 V (PEAK)

RGK = 10 k

RGK = 100

RGK = 1.0 k

10000

100

1.0

1000

500

5.0

IGT = 5 µAIGT = 70 µA

IGT = 35 µA

IGT = 15 µA

110°

TJ = 25°

Vpk = 400 V

200 V

300 V

Figure 16. Exponential Static dv/dt versus Peak

Voltage and Gate-Cathode Termination Resistance Figure 17. Exponential Static dv/dt versus

Gate-Cathode Capacitance and Resistance

Figure 18. Exponential Static dv/dt versus

Gate-Cathode Termination Resistance and

Product Trigger Current Sensitivity

MCR08B, MCR08M

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INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the

total design. The footprint for the semiconductor packages

must be the correct size to insure proper solder connection

interface between the board and the package. With the

correct pad geometry, the packages will self align when

subjected to a solder reflow process.

SOT-223

0.079

2.0

0.15

3.8

0.248

6.3

0.079

2.0

0.059

1.5 0.059

1.5

0.091

2.3

0.091

2.3

inches

SOT-223 POWER DISSIPATION

The power dissipation of the SOT-223 is a function of the

anode pad size. This can vary from the minimum pad size

for soldering to a pad size given for maximum power

dissipation. Power dissipation for a surface mount device is

determined by TJ(max), the maximum rated junction

temperature of the die, RθJA, the thermal resistance from

the device junction to ambient, and the operating

temperature, TA. Using the values provided on the data

sheet for the SOT-223 package, PD can be calculated as

follows:

PD = TJ(max) – TA

RθJA

The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values

into the equation for an ambient temperature TA of 25°C,

one can calculate the power dissipation of the device which

in this case is 550 milliwatts.

PD = 110°C – 25°C= 550 milliwatts

156°C/W

The 156°C/W for the SOT-223 package assumes the use

of the recommended footprint on a glass epoxy printed

circuit board to achieve a power dissipation of 550

milliwatts. There are other alternatives to achieving higher

power dissipation from the SOT-223 package. One is to

increase the area of the anode pad. By increasing the area of

the anode pad, the power dissipation can be increased.

Although one can almost double the power dissipation with

this method, one will be giving up area on the printed

circuit board which can defeat the purpose of using surface

mount technology. A graph of RθJA versus anode pad area

is shown in Figure 3.

Another alternative would be to use a ceramic substrate

or an aluminum core board such as Thermal Clad. Using

a board material such as Thermal Clad, an aluminum core

board, the power dissipation can be doubled using the same

footprint.

SOLDER STENCIL GUIDELINES

Prior to placing surface mount components onto a printed

circuit board, solder paste must be applied to the pads. A

solder stencil is required to screen the optimum amount of

solder paste onto the footprint. The stencil is made of brass

or stainless steel with a typical thickness of 0.008 inches.

The stencil opening size for the SOT-223 package should

be the same as the pad size on the printed circuit board, i.e.,

a 1:1 registration.

MCR08B, MCR08M

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SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated

temperature of the device. When the entire device is heated

to a high temperature, failure to complete soldering within

a short time could result in device failure. Therefore, the

following items should always be observed in order to

minimize the thermal stress to which the devices are

subjected.

•Always preheat the device.

•The delta temperature between the preheat and

soldering should be 100°C or less.*

•When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum

temperature ratings as shown on the data sheet. When

using infrared heating with the reflow soldering

method, the difference should be a maximum of 10 °C.

•The soldering temperature and time should not exceed

260°C for more than 10 seconds.

•When shifting from preheating to soldering, the

maximum temperature gradient should be 5°C or less.

•After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.

Gradual cooling should be used as the use of forced

cooling will increase the temperature gradient and

result in latent failure due to mechanical stress.

•Mechanical stress or shock should not be applied

during cooling.

* Soldering a device without preheating can cause

excessive thermal shock and stress which can result in

damage to the device.

TYPICAL SOLDER HEATING PROFILE

For any given circuit board, there will be a group of

control settings that will give the desired heat pattern. The

operator must set temperatures for several heating zones,

and a figure for belt speed. Taken together, these control

settings make up a heating “profile” for that particular

circuit board. On machines controlled by a computer, the

computer remembers these profiles from one operating

session to the next. Figure 19 shows a typical heating

profile for use when soldering a surface mount device to a

printed circuit board. This profile will vary among

soldering systems but it is a good starting point. Factors that

can affect the profile include the type of soldering system in

use, density and types of components on the board, type of

solder used, and the type of board or substrate material

being used. This profile shows temperature versus time.

The line on the graph shows the actual temperature that

might be experienced on the surface of a test board at or

near a central solder joint. The two profiles are based on a

high density and a low density board. The Vitronics

SMD310 convection/infrared reflow soldering system was

used to generate this profile. The type of solder used was

62/36/2 Tin Lead Silver with a melting point between

177–189°C. When this type of furnace is used for solder

reflow work, the circuit boards and solder joints tend to

heat first. The components on the board are then heated by

conduction. The circuit board, because it has a large surface

area, absorbs the thermal energy more efficiently, then

distributes this energy to the components. Because of this

effect, the main body of a component may be up to 30

degrees cooler than the adjacent solder joints.

STEP 1

PREHEAT

ZONE 1

“RAMP”

STEP 2

VENT

“SOAK”

STEP 3

HEATING

ZONES 2 & 5

“RAMP”

STEP 4

HEATING

ZONES 3 & 6

“SOAK”

STEP 5

HEATING

ZONES 4 & 7

“SPIKE”

STEP 6

VENT STEP 7

COOLING

200°C

150°C

100°C

50°C

TIME (3 TO 7 MINUTES TOTAL) TMAX

SOLDER IS LIQUID FOR

40 TO 80 SECONDS

(DEPENDING ON

MASS OF ASSEMBLY)

205° TO

219°C

PEAK AT

SOLDER

JOINT

DESIRED CUR VE FOR LOW

MASS ASSEMBLIES

DESIRED CUR VE FOR HIGH

MASS ASSEMBLIES

100°C

150°C160°C

170°C

140°C

Figure 19. Typical Solder Heating Profile

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PACKAGE DIMENSIONS

123

0.08 (0003) C

DIM

AMIN MAX MIN MAX

MILLIMETERS

0.249 0.263 6.30 6.70

INCHES

B0.130 0.145 3.30 3.70

C0.060 0.068 1.50 1.75

D0.024 0.035 0.60 0.89

F0.115 0.126 2.90 3.20

G0.087 0.094 2.20 2.40

H0.0008 0.0040 0.020 0.100

J0.009 0.014 0.24 0.35

K0.060 0.078 1.50 2.00

L0.033 0.041 0.85 1.05

M0 10 0 10

S0.264 0.287 6.70 7.30

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

____

STYLE 10:

PIN 1. CATHODE

2. ANODE

3. GATE

4. ANODE

SOT–223

CASE 318E–04

ISSUE J

MCR08B, MCR08M

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Notes

MCR08B, MCR08M

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Notes

MCR08B, MCR08M

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without further notice to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular

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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

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MCR08BT1/D

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