Power Transistors 2SC5406, 2SC5406A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.50.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 1500 V VCES 1500 V Collector to emitter voltage VCEO 600 V Emitter to base voltage VEBO 5 V Peak collector current ICP 20 A Collector current IC 14 A Base current IB 8 A Collector power TC=25C dissipation Ta=25C 100 PC Junction temperature Tj Storage temperature Tstg 3 Electrical Characteristics 2SC5406 current 2SC5406A 10.0 23.4 22.00.5 26.50.5 2.0 1.2 5.450.3 5 0.70.1 5.450.3 5 1 2 3 1:Base 2:Collector 3:Emitter TOP-3E Full Pack Package W 150 C -55 to +150 C (TC=25C) Parameter Collector cutoff 2.0 (TC=25C) 5 5 5 4.0 2.00.2 1.10.1 18.60.5 Absolute Maximum Ratings 5 5.50.3 2.0 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) 3.30.3 0.70.1 3.00.3 3.20.1 4.5 Features Symbol ICBO Conditions min typ VCB = 1000V, IE = 0 max Unit 50 A VCB = 1500V, IE = 0 1 mA Emitter cutoff current IEBO VEB = 5V, IC = 0 50 A Forward current transfer ratio hFE VCE = 5V, IC = 7A Collector to emitter saturation voltage VCE(sat) IC = 7A, IB = 1.75A Base to emitter saturation voltage VBE(sat) IC = 7A, IB = 1.75A Transition frequency fT VCE = 10V, IC = 0, f = 0.5MHz Storage time tstg Fall time tf IC = 7A, IB1 = 1.75A, IB2 = -3.5A 5 12 3 1.5 3 V V MHz 4.0 s 0.3 s 1 Power Transistors 2SC5406, 2SC5406A 120 (1) 100 80 60 40 ICP IC 10 f=64kHz, TC<90C Area of safe operation with respect to the single pulse overload curve at the time of switching ON, shutting down by the high voltage spark, holding down and like that, during horizontal operation. t=100s 1ms 10ms 1 DC 0.1 20 15 10 5 0.01 20 Area of safe operation, horizontal operation ASO 25 Collector current IC (A) (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink. (3) Without heat sink Collector current IC (A) Collector power dissipation PC (W) Area of safe operation (ASO) 100 (2) (3) 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) 2 <1mA 0 0.001 0 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) 0 500 1000 2SC5406 2SC5406A PC -- Ta 140 1500 2000 Collector to emitter voltage VCE (V)