MICROWAVE
12-3
SILICON MICROWAVE DIODES
Step Recovery Diodes
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Features
Designed for harmonic generation from 0.2 GHz to 25 GHz of high power levels and / or high
multiplication orders, the SRD diodes are ESA qualified. The detail specification ESA/SCC5512/016 is
available upon request.
These diodes are available in package and chips.
Main characteristics
Characteristics Type Variant Maximum ratings
DC reverse voltage DH252 01 40 V
DH256 02 30 V
DH292 03 20 V
DH267 04 15 V
DC forward current DH252 & DH256 01 & 02 200 mA
DH292 & DH267 03 & 04 100 mA
RF power dissipation DH252 01 1.5 W
DH256 02 1.25 W
DH292 03 1.1 W
DH267 04 0.75 W
Operating temperature All All - 55 to + 150° C
Storage temperature All All - 65 to + 175° C
Soldering temperature All All + 220° C
Other package, specially M208 family can be used.
Other types have been successfully delivered for Aerospace applications: please, don’t
hesitate to request our aerospace project part list, periodically updated.
DH252 01 F27D 1.1 2.2 2.0 - 8.0 3.0
DH256 02 F27D 0.7 1.3 5.0 - 12 2.0
DH292 03 F27D 0.4 0.7 8.0 - 16 0.6
DH267 04 F27D 0.4 0.5 10 - 25 0.2
Electrical characteristics
All the detail specification shall be read in conjunction with ESA/SCC Generic Specification N° 5010,
the special requirements are included in the detail specification.
STEP RECOVERY DIODES
Variant Package min max Frequency (GHz) Power (W)
Type ESA/SCC5512/016 Total capacitance (pF) Output
Maximum ratings
SILICON MICROWAVE DIODES
MICROWAVE
12-4
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DC Junction Forward Minority ESA/SCC
ESA/SCC Type reverse voltage capacitance series resistance carrier lifetime number
(min) (max) (max) (max value)
5513/032 DH50033 30 V 0.12 pF 1.8 Ω40 ns ESA/SCC5513/032
/032 DH50034 30 V 0.17 pF 1.5 Ω50 ns ESA/SCC5513/032
/032 DH50035 30 V 0.23 pF 1.0 Ω50 ns ESA/SCC5513/032
/032 DH50036 30 V 0.40 pF 0.9 Ω60 ns ESA/SCC5513/032
/032 DH50037 30 V 0.60 pF 0.7 Ω80 ns ESA/SCC5513/032
/036 DH50052 50 V 0.08 pF 1.6 Ω80 ns ESA/SCC5513/036
/036 DH50053 50 V 0.12 pF 1.4 Ω60 ns ESA/SCC5513/036
/036 DH50054 50 V 0.17 pF 1.1 Ω70 ns ESA/SCC5513/036
/036 DH50055 50 V 0.23 pF 1.0 Ω80 ns ESA/SCC5513/036
/036 DH50056 50 V 0.40 pF 0.9 Ω100 ns ESA/SCC5513/036
/03 DH50057 50 V 0.60 pF 0.7 Ω120 ns ESA/SCC5513/036
/037 DH50071 70 V 0.06 pF 2.0 Ω100 ns ESA/SCC5513/037
/037 DH50072 70 V 0.08 pF 1.7 Ω100 ns ESA/SCC5513/037
/037 DH50073 70 V 0.12 pF 1.6 Ω120 ns ESA/SCC5513/037
/037 DH50074 70 V 0.17 pF 1.4 Ω120 ns ESA/SCC5513/037
/037 DH50075 70 V 0.23 pF 1.0 Ω200 ns ESA/SCC5513/037
/037 DH50076 70 V 0.40 pF 0.9 Ω200 ns ESA/SCC5513/037
/037 DH50077 70 V 0.60 pF 0.7 Ω300 ns ESA/SCC5513/037
/038 DH50101 100 V 0.06 pF 1.9 Ω300 ns ESA/SCC5513/038
/038 DH50102 100 V 0.08 pF 1.7 Ω300 ns ESA/SCC5513/038
/038 DH50103 100 V 0.12 pF 1.4 Ω400 ns ESA/SCC5513/038
/038 DH50104 100 V 0.17 pF 1.2 Ω500 ns ESA/SCC5513/038
/038 DH50105 100 V 0.23 pF 1.0 Ω500 ns ESA/SCC5513/038
/038 DH50106 100 V 0.40 pF 0.8 Ω800 ns ESA/SCC5513/038
/038 DH50107 100 V 0.60 pF 0.6 Ω1000 ns ESA/SCC5513/038
SILICON MICROWAVE DIODES
Ultra fast switching PIN diodes
Features
These diodes are specially designed for fast switching.They operate at frequencies from few MHz
to 25 GHz. The passivated mesa technology, have medium (≤50 µm) and thin layer (≤10 µm).
They are manufactured with proprietary technology.
They are ESA qualified. They are project part list qualified.
The detail specification ESA/SCC5513 is available upon request or from ESA CD-ROM.
Main characteristics
ULTRAFAST SWITCHING MEDIUM VOLTAGE PIN DIODES
Electrical characteristics: See table here under.
These diodes are available in M208 family package, see page 1-23 of this data book.
All the detail specification shall be read in conjunction with ESA/SCC Generic Specification N°5010,
the special requirements are included in the detail specification.
ULTRAFAST SWITCHING PIN DIODES
DC Junction Forward Minority ESA/SCC
ESA/SCC Type reverse voltage capacitance series resistance carrier lifetime number
(min) (max) (max) (max)
/031 DH50151 150 V 0.06 pF 2.0 Ω160 ns ESA/SCC5513/031
5513/031 DH50152 150 V 0.08 pF 1.7 Ω185 ns ESA/SCC5513/031
/031 DH50153 150 V 0.12 pF 1.5 Ω240 ns ESA/SCC5513/031
/031 DH50154 150 V 0.17 pF 1.4 Ω400 ns ESA/SCC5513/031
/031 DH50155 150 V 0.23 pF 1.0 Ω440 ns ESA/SCC5513/031
/031 DH50156 150 V 0.40 pF 0.8 Ω640 ns ESA/SCC5513/031
/031 DH50157 150 V 0.60 pF 0.6 Ω760 ns ESA/SCC5513/031
/033 DH50201 200 V 0.06 pF 2.3 Ω240 ns ESA/SCC5513/033
/033 DH50202 200 V 0.08 pF 2.1 Ω320 ns ESA/SCC5513/033
/033 DH50203 200 V 0.12 pF 1.5 Ω400 ns ESA/SCC5513/033
/033 DH50204 200 V 0.17 pF 1.3 Ω520 ns ESA/SCC5513/033
/033 DH50205 200 V 0.23 pF 1.0 Ω640 ns ESA/SCC5513/033
/033 DH50206 200 V 0.40 pF 0.8 Ω710 ns ESA/SCC5513/033
/033 DH50207 200 V 0.60 pF 0.7 Ω840 ns ESA/SCC5513/033
/033 DH50208 200 V 0.80 pF 0.6 Ω1000 ns ESA/SCC5513/033
/033 DH50209 200 V 1.20 pF 0.5 Ω1200 ns ESA/SCC5513/033
/034 DH50251 250 V 0.06 pF 2.4 Ω265 ns ESA/SCC5513/034
/034 DH50252 250 V 0.08 pF 2.2 Ω400 ns ESA/SCC5513/033
/034 DH50253 250 V 0.12 pF 2.0 Ω600 ns ESA/SCC5513/033
/034 DH50254 250 V 0.17 pF 1.4 Ω720 ns ESA/SCC5513/033
/034 DH50255 250 V 0.23 pF 0.9 Ω800 ns ESA/SCC5513/033
/034 DH50256 250 V 0.40 pF 0.8 Ω970 ns ESA/SCC5513/033
5513/035 DH50401 400 V 0.06 pF 2.5 Ω560 ns ESA/SCC5513/035
/035 DH50402 400 V 0.08 pF 2.3 Ω640 ns ESA/SCC5513/035
/035 DH50403 400 V 0.12 pF 2.1 Ω800 ns ESA/SCC5513/035
/035 DH50404 400 V 0.17 pF 1.8 Ω1200 ns ESA/SCC5513/035
/035 DH50405 400 V 0.23 pF 1.6 Ω1600 ns ESA/SCC5513/035
MICROWAVE
12-5
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SILICON MICROWAVE DIODES
Fast switching silicon PIN diodes
Maximum ratings
For all variants:
Package
For all variants: the detail specification gives the variant with the F27d and M208 family
(different possibilities of ribbons). Other hermetic pack ages can be supplied upon request.
Temperature Tcase
Operating temperature - 55 to + 125°C
Storage temperature - 65 to + 150°C
Soldering temperature + 220°C
FAST SWITCHING SILICON PIN DIODES
Electrical characteristics ESA/SCC 5513/OYY
These diodes are available in M208 family package, see page 1-24 of this data book
All the detail specification shall be read in conjunction with ESA/SCC Generic Specification N°5010,
the special requirements are included in the detail specification.
TUNING VARACTORS
Features
Designed for tuning in VCO and VCXO, the DH7XXX series offer a large selection of capacitance range
and quality factor.
These diodes can be used in other applications such as phase shifters, delay line, etc.
The wafer technology has a passivated epitaxial mesa.
These diodes are available in packages and chips.
ESA qualification is in progress.Detail specification: ESA/SCC 5512/022 is available upon request.
Main characteristics
Electrical characteristics
MICROWAVE
12-6
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SILICON MICROWAVE DIODES
Tuning varactors
Maximum ratings
Characteristics Type Variant Maximum ratings
Operating temperature All All - 55 to + 125°C
Storage temperature All All - 65 to + 150°C
Soldering temperature All All + 220°C
Qualification status
This tuning varactor series is PPLqualified.
Figure of Total capacitance (pF) Tuning
merit (Q) Ct ratio
Test f = 50 MHzf = 1 MHzf = 1 MHzf = 1 MHzf = 1 MHz Ct1V/Ct12VCt1V/CT20V
conditions Vr = 4 V Vr = 1 V Vr = 4 V Vr = 12 VVr = 20 V f = 1 MHz f = 1 MHz
Type
Case(1)
typ. typ. ±20% typ. typ. typ. typ. Chip
DH76010F27d 2200 2.5 1.2 0.6 0.5 4.1 4.9 EH76010
DH76015F27d 2000 3.6 1.7 0.8 0.7 4.4 5.4 EH76015
DH76022F27d 1700 5.2 2.4 1.1 0.9 4.7 5.8 EH76022
DH76033F27d 1400 7.7 3.5 1.6 1.3 4.9 6.1 EH76033
DH76047F27d 1000 11 4.9 2.2 1.7 5.0 6.4 EH76047
DH76068F27d 700 16 6.9 3.0 2.4 5.1 6.5 EH76068
DH76100F27d 400 23 10.2 4.5 3.5 5.2 6.7 EH76100
DH76150F27d 140 34 15.2 6.6 5.1 5.2 6.8 EH76150
(1) Custom cases available on request
Temperature ranges:
Operating junction (Tj):-55°C to +150°C
Storage :-65°C to +150°C
Characteristics Type Variant Maximum ratings
DC reverse voltage All 01 to 66 3 V
DC forward current All 01 to 66 50 mA
Power dissipation All 01 to 66 50 mW
Burn-out energy All 01 to 66 5.0 erg
Operating temperature All All - 55 to + 150°C
Storage temperature All All - 65 to + 175°C
Soldering temperature All All + 220°C
MICROWAVE
SILICON MICROWAVE DIODES
Barrier Schottk y for mixing
12-7
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All the detail specification shall be read in conjunction with ESA/SCC Generic Specification N°5010,
the special requirements are included in the detail specification.
Variant Type Frequency range Total junction Noise figure
(GHz) (typ) capacitance (max) (dB) (max)
01 to 06 DH301 1.0 - 6.0 0.48 pF 6.5
07 to 12 DH302 1.0 - 6.0 0.48 pF 6.0
13 to 18 DH303 1.0 - 6.0 0.48 pF 5.5
19 to 24 DH312 6.0 - 12.0 0.30 pF 7.0
25 to 30 DH313 6.0 - 12.0 0.30 pF 6.5
31 to 36 DH314 6.0 - 12.0 0.30 pF 6.0
37 to 42 DH315 6.0 - 12.0 0.30 pF 5.5
43 to 48 DH322 12.0 - 18.0 0.21 pF 7.5
49 to 54 DH323 12.0 - 18.0 0.21 pF 7.0
55 to 60 DH324 12.0 - 18.0 0.21 pF 6.5
61 to 66 DH325 12.0 - 18.0 0.21 pF 6.0
Features
These low barrier diodes are specially required for mixing application where the local oscillator (LO)
drive level is between -10 dBm and +10 dBm.
From 1 to 18 GHz, wide band, the low value for silicon diode of noise figure, these kind of diodes
represent the component that can be used for telecommunication satellite application.
The wafer technology with a passivated planar construction is as reliable as these diodes are used for
aerospace applications since 1976.
The detail specification ESA/SCC5512/017 is available upon request.
These diodes are available in package and chips.
BARRIER SCHOTTKY FOR MIXING
Electrical characteristics ESA/SCC5512/017
Maximum ratings
These diodes are available in F51 family package. Please consult page 1-30 of this data book.
MICROWAVE
12-8
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SILICON MICROWAVE DIODES
Silicon Mos Capacitors
All the detail specification shall be read in conjunction with ESA/SCC Generic Specification N°5010,
the special requirements are included in the detail specification.
General Features
MOS (Metal Oxide Silicon) capacitors chips and array capacitors are suitable for hybrid microwave
circuits up to 30 GHz.
Their extreme stability versus temperature make them the best capacitors for all wide temperature
range and wide frequency range on the market.
The top metallization are titanium sputtered (700 Å) and gold (6000 Å) which allow: thermocom-
pression, thermosonie and wedge bonding.
The bottom termination of 1.5 µm Au allows high temperature soldering as:
AuSn eutectic at melting point 280°C, or AuGe eutectic at melting point 350°C.
Gluing can be also used for die attach.
Single-pad chips capacitors (CS series)
Features
They are designed for impedance matching, decoupling, RF by-pass, DC- Block
Typical characteristics
Values are available from 0.22 pF up to 100 pF. Please, consult page 1-49 of this data book.
Multi-pads capacitors arrays (CJ series)
Features
These capacitors arrays are designed for fine and precise tuning in hybrid.
They are suitable for frequency tuning when the frequency band must be tuned after the design of
the equipment, by bonding only the right capacitance without a rework on hybrid. The adjustment is
kept whatever the mechanical and environmental conditions are.
Typical characteristics
Values are available from: 0.125 pF up to 60 pF, with steps of 2S, 4S, 10S.
(S value of the smallest capacity of the array)
Please, consult page 1-50of this data book.
SILICON MOS CAPACITORS
MICROWAVE
SILICON MICROWAVE DIODES
Multi pad bar capacitors CB series
12-9
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Multi-pads BAR capacitors (CB series)
Features
These capacitors bar arrays are designed for by-pass decoupling MMIC’s.
They can also be used in hybrid circuits where high performances and stable capacitors are required.
They are suitable for frequency tuning when the frequency band must be tuned after the design of
the equipment, by bonding only the right capacitance without a rework on hybrid.The adjustment is
kept whatever the mechanical and environmental conditions are.
Typical characteristics
Values are available from: 0.125 pF up to 60 pF, with steps of 2S, 4S, 10S.
(S value of the smallest capacity of the array).
Please, consult page 1-51 of this data book.
