NTE5536 Silicon Controlled Rectifier (SCR) 800V, 40 Amp, TO220 Description: The NTE5536 is a silicon controlled rectifier (SCR) in a TO220 type package designed for use as back-to-back SCR output devices for solid state relays or applications requiring high surge operation. Features: D 400A Surge Capability D 800V Blocking Voltage Absolute Maximum Ratings: Peak Reverse Blocking Voltage (Note 1), VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V RMS Forward Current (TC = +80C, Note 2), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A Average Forward Current (All Conduction Angles, Note 2), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . 25A Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave), ITSM 8.3ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400A 1.5ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450A Forward Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Forward Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Forward Peak Gate Current (300s, 120 PPS), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60C/W Note 1. VRRM can be applied on a continuous DC basis without incurring damage. Ratings apply for zero or negative voltage. Device should be tested for blocking capability in a manner such that the voltage supplied exceeds the rated blocking voltage. Note 2. This device is rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when the device i to be used at high sustained currents. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 800 - - V Peak Forward Blocking Voltage VDRM TJ = +125C Peak Forward or Reverse Blocking Current IDRM, IRRM Rated VDRM or VRRM, TJ = +25C - - 10 A Rated VDRM or VRRM, TJ = +125C - - 2 mA Forward ON Voltage VTM ITM = 80A, Note 3 - 1.6 2.0 V Gate Trigger Current, Continuous DC IGT Anode Voltage = 12V, RL = 100 - 15 50 mA Anode Voltage = 12V, RL = 100, TC = -40C - 30 90 mA - 1.0 1.5 V 0.2 - - V Gate Trigger Voltage, Continuous DC VGT Anode Voltage = 12V, RL = 100 Gate Non-Trigger Voltage VGD Anode Voltage = 800V, RL = 100, TJ = +125C Holding Current IH Anode Voltage = 12V - 30 60 mA Turn-On Time tgt ITM = 40A, IGT = 60mA - 1.5 - s VDRM = 800V, Gate Open, Exponential Waveform - 50 - V/s Critical Rate of Rise of Off-State Voltage dv/dt Note 3. Pulse test: Pulse Width 300s, Duty Cycle 2%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .070 (1.78) Max Cathode .100 (2.54) .500 (12.7) Min Gate Anode/Tab