NTE5536
Silicon Controlled Rectifier (SCR)
800V, 40 Amp, TO220
Description:
The NTE5536 is a silicon controlled rectifier (SCR) in a TO220 type package designed for use as
back−to−back SCR output devices for solid state relays or applications requiring high surge opera-
tion.
Features:
D400A Surge Capability
D800V Blocking Voltage
Absolute Maximum Ratings:
Peak Reverse Blocking Voltage (Note 1), VRRM 800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS Forward Current (TC = +80°C, Note 2), IT(RMS) 40A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Forward Current (All Conduction Angles, Note 2), IT(AV) 25A. . . . . . . . . . . . . . . . . . . . . . . . .
Peak Non−Repetitive Surge Current (1/2 Cycle, Sine Wave), ITSM
8.3ms 400A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.5ms 450A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Peak Gate Power, PGM 20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Average Gate Power, PG(AV) 500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Peak Gate Current (300μs, 120 PPS), IGM 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ−40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg −40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction−to−Case, RthJC 1°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction−to−Ambient, RthJA 60°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. VRRM can be applied on a continuous DC basis without incurring damage. Ratings apply
for zero or negative voltage. Device should be tested for blocking capability in a manner such
that the voltage supplied exceeds the rated blocking voltage.
Note 2. This device is rated for use in applications subject to high surge conditions. Care must be
taken to insure proper heat sinking when the device i to be used at high sustained currents.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Forward Blocking Voltage VDRM TJ = +125°C 800 − − V
Peak Forward or Reverse
Blocking Current
IDRM,
IRRM
Rated VDRM or VRRM, TJ = +25°C− − 10 μA
Rated VDRM or VRRM, TJ = +125°C− − 2 mA
Forward ON Voltage VTM ITM = 80A, Note 3 −1.6 2.0 V
Gate Trigger Current, Continuous DC IGT Anode Voltage = 12V, RL = 100Ω−15 50 mA
Anode Voltage = 12V, RL = 100Ω,
TC = −40°C
−30 90 mA
Gate Trigger Voltage, Continuous DC VGT Anode Voltage = 12V, RL = 100Ω−1.0 1.5 V
Gate Non−Trigger Voltage VGD Anode Voltage = 800V, RL = 100Ω,
TJ = +125°C
0.2 − − V
Holding Current IHAnode Voltage = 12V −30 60 mA
Turn−On Time tgt ITM = 40A, IGT = 60mA −1.5 −μs
Critical Rate of Rise of Off−State
Voltage
dv/dt VDRM = 800V, Gate Open,
Exponential Waveform
−50 −V/μs
Note 3. Pulse test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
.250
(6.35)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.110 (2.79)
.420 (10.67)
Max
.070 (1.78) Max
Cathode
.100 (2.54) Anode/Tab
Gate
.147 (3.75)
Dia Max
