APTGT400U120D4G Single switch Trench + Field Stop IGBT Power Module 1 3 5 2 VCES = 1200V IC = 400A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * * * * Kelvin emitter for easy drive M6 connectors for power M4 connectors for signal High level of integration Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant Absolute maximum ratings IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C Max ratings 1200 650 400 800 20 1785 Reverse Bias Safe Operating Area Tj = 125C 800A@1050V RBSOA Parameter Collector - Emitter Breakdown Voltage TC = 25C TC = 80C TC = 25C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT400U120D4G - Rev 2 July, 2008 Symbol VCES APTGT400U120D4G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 400A Tj = 125C VGE = VCE , IC = 12mA VGE = 20V, VCE = 0V Min Typ 1.4 1.7 2.0 5.8 5.0 Max Unit 750 2.1 A 6.5 600 V nA Max Unit V Dynamic Characteristics Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn on Energy Eoff Turn off Energy Isc Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz Min VGE=15V, IC=400A VCE=600V Inductive Switching (25C) VGE = 15V VBus = 600V IC = 400A RG = 1.8 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 400A RG = 1.8 VGE = 15V Tj = 125C VBus = 600V IC = 400A Tj = 125C RG = 1.8 VGE 15V ; VBus = 900V tp 10s ; Tj = 125C Typ 28 1.6 1.2 nF 3.7 C 280 90 550 ns 130 300 100 ns 650 180 33 mJ 59 1600 A Reverse diode ratings and characteristics IRRM IF Maximum Reverse Leakage Current Test Conditions VR=1200V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy IF = 400A VGE = 0V IF = 400A VR = 600V di/dt =4000A/s Min 1200 Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C www.microsemi.com Typ Max 750 1000 400 1.6 1.6 250 350 40 75 18 34 Unit V A A 2.1 V ns C mJ 2-5 APTGT400U120D4G - Rev 2 July, 2008 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGT400U120D4G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight M6 M4 2500 -40 -40 -40 3 1 Typ Max 0.07 0.13 Unit C/W V 150 125 125 5 2 350 C N.m g www.microsemi.com 3-5 APTGT400U120D4G - Rev 2 July, 2008 D4 Package outline (dimensions in mm) APTGT400U120D4G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 800 800 TJ = 125C TJ=25C 400 0 VGE=15V 400 VGE=9V 0 0 1 2 VCE (V) 3 0 4 1 2 VCE (V) 3 4 Energy losses vs Collector Current Transfert Characteristics 800 140 TJ=25C 600 VCE = 600V VGE = 15V RG = 1.8 TJ = 125C 120 100 E (mJ) TJ=125C 400 200 Eoff Eon 80 60 Er 40 TJ=125C 20 Eon 0 0 5 6 7 8 9 10 11 0 12 100 200 300 400 500 600 700 800 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance VCE = 600V VGE =15V IC = 400A TJ = 125C 175 150 125 100 Eon Eoff 75 Reverse Bias Safe Operating Area 1000 800 IC (A) 200 E (mJ) VGE=13V 200 200 IC (A) VGE=17V 600 TJ=125C IC (A) IC (A) 600 Eoff 400 50 VGE=15V TJ=125C RG=1.8 200 Er 25 600 0 0 0 2 4 6 8 10 12 Gate Resistance (ohms) 0 14 400 800 1200 1600 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.07 0.06 0.05 IGBT 0.9 0.7 0.04 0.5 0.03 0.3 0.02 0.1 0.01 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT400U120D4G - Rev 2 July, 2008 Thermal Impedance (C/W) 0.08 APTGT400U120D4G Forward Characteristic of diode VCE=600V D=50% RG=1.8 TJ=125C Tc=75C 40 30 800 ZVS TJ=25C 600 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 50 ZCS 20 10 400 200 Hard switching TJ=125C TJ=25C 0 0 0 100 200 300 IC (A) 400 0 500 0.4 0.8 1.2 VF (V) 1.6 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.15 Diode 0.125 0.9 0.1 0.7 0.075 0.5 0.05 0.3 0.025 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT400U120D4G - Rev 2 July, 2008 rectangular Pulse Duration (Seconds)