APTGT400U120D4G
APTGT400U120D4G – Rev 2 July, 2008
www.microsemi.com 1-5
Absolute maximum ratings
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 1200 V
TC = 25°C 650
IC Continuous Collector Current TC = 80°C 400
ICM Pulsed Collector Current TC = 25°C 800
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 1785 W
RBSOA Reverse Bias Safe Operating Area Tj = 125°C 800A@1050V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
3
5
2
1
VCES = 1200V
IC = 400A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Trench + Field Stop IGBT Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• M6 connectors for power
• M4 connectors for signal
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
Single switch
Trench + Field Stop IGBT
Power Module
APTGT400U120D4G
APTGT400U120D4G – Rev 2 July, 2008
www.microsemi.com 2-5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1200V 750 µA
Tj = 25°C 1.4 1.7 2.1
VCE(sat) Collector Emitter saturation Voltage VGE = 15V
IC = 400A Tj = 125°C 2.0 V
VGE(th) Gate Threshold Voltage VGE = VCE , IC = 12mA 5.0 5.8 6.5 V
IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 600 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 28
Coes Output Capacitance 1.6
Cres Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz 1.2
nF
QG Gate charge VGE=±15V, IC=400A
VCE=600V 3.7 µC
Td(on) Turn-on Delay Time 280
Tr Rise Time 90
Td(off) Turn-off Delay Time 550
Tf Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 400A
RG = 1.8Ω 130
ns
Td(on) Turn-on Delay Time 300
Tr Rise Time 100
Td(off) Turn-off Delay Time 650
Tf Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 400A
RG = 1.8Ω 180
ns
Eon Turn on Energy Tj = 125°C 33
Eoff Turn off Energy
VGE = ±15V
VBus = 600V
IC = 400A
RG = 1.8Ω Tj = 125°C 59
mJ
Isc Short Circuit data VGE ≤15V ; VBus = 900V
tp ≤ 10µs ; Tj = 125°C 1600 A
Reverse diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 1200 V
Tj = 25°C 750
IRRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 1000 µA
IF DC Forward Current Tc = 80°C 400 A
Tj = 25°C 1.6 2.1
VF Diode Forward Voltage IF = 400A
VGE = 0V Tj = 125°C 1.6 V
Tj = 25°C 250
trr Reverse Recovery Time Tj = 125°C 350 ns
Tj = 25°C 40
Qrr Reverse Recovery Charge Tj = 125°C 75 µC
Tj = 25°C 18
Err Reverse Recovery Energy
IF = 400A
VR = 600V
di/dt =4000A/µs
Tj = 125°C 34 mJ
APTGT400U120D4G
APTGT400U120D4G – Rev 2 July, 2008
www.microsemi.com 3-5
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.07
RthJC Junction to Case Thermal Resistance Diode 0.13 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 125
°C
M6 3 5
Torque Mounting torque M4 1 2
N.m
Wt Package Weight 350 g
D4 Package outline (dimensions in mm)
APTGT400U120D4G
APTGT400U120D4G – Rev 2 July, 2008
www.microsemi.com 4-5
Typical Performance Curve
Output Characteristics (V
GE
=15V)
T
J
=25°C
T
J
=125°C
0
200
400
600
800
01234
V
CE
(V)
I
C
(A)
Output Characteristics
V
GE
=15V
V
GE
=13V
V
GE
=17V
V
GE
=9V
0
200
400
600
800
01234
V
CE
(V)
I
C
(A)
T
J
= 125°C
Transfert Characteristics
T
J
=25°C
T
J
=125°C
T
J
=125°C
0
200
400
600
800
5 6 7 8 9 10 11 12
V
GE
(V)
I
C
(A)
Energy losses vs Collector Cu rren t
Eon
Eon
Eoff
Er
0
20
40
60
80
100
120
140
0 100 200 300 400 500 600 700 800
I
C
(A)
E (mJ)
V
CE
= 600V
V
GE
= 15V
R
G
= 1.8 Ω
T
J
= 125°C
Eon
Eoff Eoff
Er
0
25
50
75
100
125
150
175
200
02468101214
Gate Resistance (ohm s)
E (mJ)
V
CE
= 600V
V
GE
=15V
I
C
= 400A
T
J
= 125°C
Swi tch ing Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area
0
200
400
600
800
1000
0 400 800 1200 1600
V
CE
(V)
I
C
(A)
V
GE
=15V
T
J
=125°C
R
G
=1.8 Ω
maximu m Effective Transient Therm al Impedance, Junction to Case vs P u lse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
IGBT
APTGT400U120D4G
APTGT400U120D4G – Rev 2 July, 2008
www.microsemi.com 5-5
Forward Characteristic of diode
T
J
=25°C
T
J
=25°C
T
J
=125°C
0
200
400
600
800
0 0.4 0.8 1.2 1.6 2 2.4
V
F
(V)
I
F
(A)
Hard
switching
ZCS
ZVS
0
10
20
30
40
50
0 100 200 300 400 500
I
C
(A)
Fmax, Operating Frequency (kHz)
V
CE
=600V
D=50%
R
G
=1.8 Ω
T
J
=125°C
Tc=75°C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.025
0.05
0.075
0.1
0.125
0.15
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Diode
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Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
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