BAT42WS-V, BAT43WS-V Vishay Semiconductors Small Signal Schottky Diodes Features * These diodes feature very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges * These diodes are also available in the DO-35 case with the type designations BAT42 to BAT43, in MiniMELF SOD-80 case with the type designations LL42 to LL43, and in SOD-123 plastic case with the type designations BAT42W-V to BAT43W-V * For general purpose applications 20145 * AEC-Q101 qualified * Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC Mechanical Data Case: SOD-323 Weight: approx. 4.3 mg Packaging codes/options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part Ordering code Type marking Remarks BAT42WS-V BAT42WS-V-GS18 or BAT42WS-V-GS08 L2 Tape and reel BAT43WS-V BAT43WS-V-GS18 or BAT43WS-V-GS08 L3 Tape and reel Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Test condition Repetitive peak reverse voltage Surge forward current Power dissipation Value Unit VRRM 30 V IF Forward continuous current Repetitive peak forward current Symbol tp < 1 s, < 0.5 tp < 10 ms 1) IFRM IFSM Ptot 1) mA 500 1) mA 200 4 1) 150 1) A mW Note: 1) Valid provided that electrodes are kept at ambient temperature Document Number 81813 Rev. 1.1, 05-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 BAT42WS-V, BAT43WS-V Vishay Semiconductors Thermal Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition Symbol RthJA Thermal resistance junction to ambient air Value Unit 1) K/W 650 Tj 125 C Ambient operating temperature range Tamb - 55 to + 125 C Storage temperature range Tstg - 55 to + 150 C Junction temperature Note: 1) Valid provided that electrodes are kept at ambient temperature Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition Reverse breakdown voltage Leakage current 1) Symbol Min. IR = 100 A (pulsed) Part V(BR) 30 VR = 25 V VR = 25 V, Tj = 100 C IF = 200 mA Forward voltage 1) Diode capacitance Reverse recovery time Typ. Max. Unit IR 0.5 A IR 100 A V VF 1000 mV IF = 10 mA BAT42WS-V VF 400 mV IF = 50 mA BAT42WS-V VF 650 mV IF = 2 mA BAT43WS-V VF IF = 15 mA BAT43WS-V VF VR = 1 V, f = 1 MHz CD IF = 10 mA, IR = 10 mA, iR = 1 mA, RL = 100 trr 260 330 mV 450 mV 7 pF 5 ns Note: 1) Pulse test t < 300 s, t /T < 0.02 p p Typical Characteristics 250 1000 I F - Forward Current (mA) Ptot - Admissible Power Dissipation (mW) Tamb = 25 C, unless otherwise specified 200 150 100 50 0 0 20981 50 100 Figure 1. Admissible Power Dissipation vs. Ambient Temperature www.vishay.com 2 125 C - 40 C 10 25 C 1 0.1 0.01 150 Tamb - Ambient Temperature (C) 100 0 18443 200 400 600 800 1000 1200 VF - Instantaneous Forward Voltage (mV) Figure 2. Typical Forward Characteristics For technical questions within your region, please contact one of the following: Document Number 81813 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.1, 05-Aug-10 BAT42WS-V, BAT43WS-V Vishay Semiconductors 14 CD - Diode Capacitance (pF) IR - Reverse Leackage Current (A) 1000 125 C 100 100 C 75 C 10 50 C 1 25 C 0.1 12 10 8 6 4 2 0 0.01 0 18444 10 20 30 40 VR - Reverse Voltage (V) 0 50 18445 Figure 3. Typical Reverse Characteristics 5 10 15 25 20 30 VR - Reverse Voltage (V) Figure 4. Typical Capacitance vs. Reverse Voltage 0.1 (0.004) max. 0 to 8 0.15 (0.006) 0.10 (0.004) 0.2 (0.008) 0.8 (0.031) 1.15 (0.045) Package Dimensions in millimeters (inches): SOD-323 0.40 (0.016) 0.25 (0.010) 1.95 (0.077) 1.60 (0.063) 2.50 (0.098) 1.1 (0.043) 2.85 (0.112) 1.5 (0.059) 0.20 (0.008) 0.40 (0.016) Cathode bar Foot print recommendation: Document no.:S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 5 - Date: 23.Sept.2009 1.6 (0.063) 17443 Document Number 81813 Rev. 1.1, 05-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 0.6 (0.024) 0.6 (0.024) 0.6 (0.024) www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000