MMBT3906
Document number: DS30059 Rev. 16 - 2 1 of 7
www.diodes.com October 2012
© Diodes Incorporated
MMBT3906
40V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMBT3904)
Ideal for Medium Power Amplification and Switching
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
Mechanical Data
Case: SOT23
Case Material: molded plastic, “Green” molding compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Ordering Information (Notes 4 & 5)
Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
MMBT3906-7-F AEC-Q101 K3N / C3N 7 8 3,000
MMBT3906Q-7-F Automotive K3N 7 8 3,000
MMBT3906-13-F AEC-Q101 K3N / C3N 13 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016 2017
Code X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View
SOT23
Device Symbol Top View
Pin-Out
C
E
B
K = SAT (Shanghai Assembly / Test site)
3N = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
C = CAT (Chengdu Assembly / Test site)
3N = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
C3N
YM
K3N
YM
MMBT3906
Document number: DS30059 Rev. 16 - 2 2 of 7
www.diodes.com October 2012
© Diodes Incorporated
MMBT3906
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -6.0 V
Continuous Collector Current IC -200 mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 6) PD 310 mW
(Note 7) 350
Thermal Resistance, Junction to Ambient (Note 6) RθJA 403 °C/W
(Note 7) 357
Thermal Resistance, Junction to Leads (Note 8) RθJL 350 °C/W
Operating and Storage Temperature Range TJ,TSTG -55 to +150 °C
ESD Ratings (Note 9)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 6,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air condition;
7. Same as Note 6, ex pect the device is mounted on 15mm X 15mm X 1.6mm FR4 PCB
8. Thermal resistance from junction to solder-point (at the end of the leads).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MMBT3906
Document number: DS30059 Rev. 16 - 2 3 of 7
www.diodes.com October 2012
© Diodes Incorporated
MMBT3906
Thermal Characteristics
0 255075100125150
0.0
0.1
0.2
0.3
0.4
D e ra ting Cu rve
Temperature (°C)
Max Power Dissi p ation (W)
100µ 1m 10m 100m 1 10 100 1k
0
50
100
150
200
250
300
350
400
Transient Thermal Imped an ce
D=0.5
D=0.2 D=0.1 Single Pulse
D=0.05
Thermal Resistance (° C/W)
Pul se Width (s )
10m 100m 1 10 100 1k
0.1
1
10 Single Pulse. Tamb=25°C
Pulse Power Dissipation
Pulse Width (s )
Max Power Dissipati on (W)
MMBT3906
Document number: DS30059 Rev. 16 - 2 4 of 7
www.diodes.com October 2012
© Diodes Incorporated
MMBT3906
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BVCBO -40 V IC = -100μA, IE = 0
Collector-Emitter Breakdown Voltage (Note 10) BVCEO -40 V IC = -10mA, IB = 0
Emitter-Base Breakdown Voltage BVEBO -6.0 V IE = -100μA, IC = 0
Collector Cutoff Current ICEV -50 nA VCE = -30V, VBE = -3.0V
-50 nA
VCE = -30V, VBE = 0.25V
Emitter-Base Cutoff Current IEBO -50 nA VEB = -5V
ON CHARACTERISTICS (Note 10)
DC Current Gain hFE
60
80
100
60
30
300
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
Collector-Emitter Saturation Voltage VCE(sat) -0.25
-0.40 V IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage VBE(sat) -0.65
-0.85
-0.95 V IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo 4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance Cibo 10 pF VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance hie 2.0 12 kΩ VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio hre 0.1 10 x 10-4
Small Signal Current Gain hfe 100 400
Output Admittance hoe 3.0 60 μS
Current Gain-Bandwidth Product fT 250 MHz VCE = -20V, IC = -10mA,
f = 100MHz
Noise Figure NF 4.0 dB VCE = -5.0V, IC = -100μA,
RS = 1.0kΩ, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time td 35 ns VCC = -3.0V, IC = -10mA,
VBE(off) = 0.5V, IB1 = -1.0mA Rise Time t
r
35 ns
Storage Time ts 225 ns VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA Fall Time tf 75 ns
Notes: 10. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.
MMBT3906
Document number: DS30059 Rev. 16 - 2 5 of 7
www.diodes.com October 2012
© Diodes Incorporated
MMBT3906
1
10
1,000
100
0.1 110 1,000
100
h, D
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (mA)
Figure 1 T y pical DC Current Gain
vs. Col lecto r Current
C
0.01
0.1
10
1
110 100 1,000
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION VOL TAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Figure 2 Typical Collector-Emitter Saturation V oltage
vs. Collector Current
C
0.1
1
10
0.1 110 100 1,000
V , BASE-EMI
T
T
E
R
(V)
BE(SAT)
SA
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
I , COLLECTOR CURRENT (mA)
Figure 3 T ypical Base-Emitter Saturation Voltage
vs. Collector Current
C
I
C
I
B
= 10
T = 25°C
A
T = 75°C
A
T = -25°C
A
T = 125°C
A
1
100
10
0.1 110 100
C
A
P
A
C
I
T
A
N
C
E (p
F
)
V , REVERSE VOLTAGE (V)
Fig ur e 4 Typical Ca pacitance Char acterist ic s
R
MMBT3906
Document number: DS30059 Rev. 16 - 2 6 of 7
www.diodes.com October 2012
© Diodes Incorporated
MMBT3906
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z
MMBT3906
Document number: DS30059 Rev. 16 - 2 7 of 7
www.diodes.com October 2012
© Diodes Incorporated
MMBT3906
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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failure of the life support device or to affect its safety or effectiveness.
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