2SB1134Q - ON Semiconductor L.L.C.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

PNP/NPN Epitaxial Planar Silicon Transistors

50V/5A Switching Applications

Ordering number:ENN2091B

2SB1134/2SD1667

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

O2003TN (KOTO)/92098HA (KT)/10996TS (KOTO) 8-8812/4107AT, TS No.2091–1/4

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

OBC 06)–(V

egatloVrettimE-ot-rotcelloCV

OEC 05)–(V

egatloVesaB-ot-rettimEV

OBE 6)–(V

tnerruCrotcelloCI

C5)–(A

)esluP(tnerruCrotcelloCI

PC 9)–(A

noitapissiDrotcelloCP

C2W

52W

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

( ) : 2SB1134

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2041A

[2SB1134/2SD1667]

Applications

· Relay drivers, high-speed inverters, and other general

high-current switching applications.

Features

· Low-saturation collector-to-emitter voltage :

VCE(sat)=–0.4V max/IC=(–)3A, IB=(–)0.3A.

· Micaless package facilitating mounting.

˚C

Electrical Characteristics at Ta = 25˚C

1 : Base

2 : Collector

3 : Emitter

SANYO : TO-220ML

Mounted on ceramic board (250mm2×0.8mm)

retemaraPlobmySsnoitidnoC sgnitaR tinU

nimpytxam

tnerruCffotuCrotcelloCI

OBC VBC I,V04)–(= E0=1.0)–(Am

tnerruCffotuCrettimEI

OBE VBE I,V4)–(= C0=1.0)–(Am

niaGtnerruCCD hEF 1V

EC I,V2)–(= CA1)–(=*07*082

hEF 2V

EC I,V2)–(= CA3)–(=03

tcudorPhtdiwdnaB-niaGf

TVEC I,V5)–(= CA1)–(=03zHM

* : The 2SB1134/2SD1667 are classified by 1A hFE as follows : Continued on next page.

knaRQRS

hEF 041ot07002ot001082ot041

1.6

1.2

0.75

14.0 16.0

10.0

18.1

5.6

3.2

7.2

3.5

2.55

2.4

4.5

2.8

0.7

2.55

2.4

123

2SB1134/2SD1667

No.2091–2/4

retemaraPlobmySsnoitidnoC sgnitaR tinU

nimpytxam

ecnaticapaCtuptuOC

bo VBC zHM1=f,V01)–(= 001Fp

)061(Fp

egatloVnoitarutaSrettimE-ot-rotcelloCV

)tas(EC ICI,A3)–(= BA3.0)–(=4.0)–(V

egatloVnwodkaerBesaB-ot-rotcelloCV

OBC)RB( ICI,Am1)–(= E0=06)–(V

egatloVnwodkaerBrettimE-ot-rotcelloCV

OEC)RB( ICR,Am1)–(= EB =∞05)–(V

egatloVnwodkaerBesaB-ot-rettimEV

OBE)RB( IEI,Am1)–(= C0=6)–(V

emiTesiRt

no .itucriCtseTdeificepseeS1.0sµ

emiTegarotSt

gts .tiucriCtseTdeificepseeS )7.0(sµ

4.1sµ

emiTllaFt

f.tiucriCtseTdeificepseeS2.0sµ

Switching Time Test Circuit

Continued from preceding page.

100

Ω10Ω

20V--5V

10IB1= --10IB2= IC=2A

(For PNP, the polarity is reversed.)

50Ω

INPUT OUTPUT

100µF470µF

PW=20µs

IB1

IB2

tr, tf≤15ns

IC -- VCE

ITR08251

2SD1667

--10

--8

--6

--4

--2

00 --0.4 --0.8 --1.2 --2.0 --2.4--1.6

IC -- VCE

ITR08250

2SB1134

IB=0

--50mA

--100mA

--150mA

--200mA

--250mA

--300mA

--500mA

IB=0

50mA

100mA

150mA

200mA

250mA

300mA

350mA

400mA

450mA

500mA

IC -- VBE

ITR08253

IC -- VBE

ITR08252

2SB1134

VCE=--2V

--20°C

Ta=80°C

25°C

--20°C

Ta=80°C

25°C

--10

--8

--6

--4

--2

00 --0.2 --0.4 --0.6 --0.8 --1.4--1.0 --1.2

00 0.4 0.8 1.2 2.0 2.41.6

2SD1667

VCE=2V

00 0.2 0.4 0.6 0.8 1.41.0 1.2

--450mA

--350mA

--400mA

Collector Current, IC–A

Collector-to-Emitter Voltage, VCE –V

Collector Current, IC–A

Collector-to-Emitter Voltage, VCE –V

Collector Current, IC–A

Base-to-Emitter Voltage, VBE –V

Collector Current, IC–A

Base-to-Emitter Voltage, VBE –V

2SB1134/2SD1667

No.2091–3/4

--1.0

2--0.1

523 52--10

523 23--1.0

VBE(sat) -- IC

ITR08260

2SB1134

ITR08258

VCE(sat) -- IC

--1.0

--0.01

--0.1

23 5 23 5

--0.1 --1.0 23 5 --10 2

2SB1134

IC / IB=10

ITR08256

Ta=80°C

--20°C

25°C

VCE(sat) -- IC

--1.0

--0.01

--0.1

23 5 23 5

--0.1 --1.0 23 5 --10 2

2SB1134

IC / IB=20

Ta=80°C

--20°C

25°C

2SD1667

VCE=2V

hFE -- IC

ITR08255

hFE -- IC

100

--0.01

1000

23 5 23 5

--0.1 23 5 2

--10--1.0

2SB1134

VCE=--2V

ITR08254

Ta=80°C

--20°C

25°C

IC / IB=10

IC / IB=20

1.0

20.1

523 5210

523 231.0

VBE(sat) -- IC

ITR08261

2SD1667

100

0.01

1000

23 5 23 5 23 5

0.1 2

101.0

Ta=80°C

--20°C

25°C

VCE(sat) -- IC

1.0

0.01

0.1

23 5 23 5

0.1 1.0 23 5 10 2

2SD1667

IC / IB=10

ITR08257

Ta=80°C

--20°C

25°C

VCE(sat) -- IC

1.0

0.01

0.1

23 5 23 5 23 5

0.1 1.0 10 2

2SD1667

IC / IB=20

ITR08259

Ta=80°C

--20°C

25°C

IC / IB=10

IC / IB=20

DC Current Gain, hFE

Collector Current, IC–A

DC Current Gain, hFE

Collector Current, IC–A

Collector-to-Emitter

Saturation Voltage, VCE(sat) – V

Collector Current, IC–A

Collector-to-Emitter

Saturation Voltage, VCE(sat) – V

Collector Current, IC–A

Collector-to-Emitter

Saturation Voltage, VCE(sat) – V

Collector Current, IC–A

Collector-to-Emitter

Saturation Voltage, VCE(sat) – V

Collector Current, IC–A

Base-to-Emitter

Saturation Voltage, VBE(sat) – V

Collector Current, IC–A

Base-to-Emitter

Saturation Voltage, VBE(sat) – V

Collector Current, IC–A

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be exported without obtaining the export license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of October, 2003. Specifications and information herein are subject

to change without notice.

2SB1134/2SD1667

PS No.2091–4/4

A S O

--10

--1.0

--0.1

57 2 3

--1.0 57 2 3

--10 57

--100

ITR08262

2SB1134

ITR08265

PC -- Tc

100 140120 1602006040 80

2SB1134 / 2SD1667

IC=–5A

ICP=–9A

1ms

100ms

10ms

DC operation

A S O

2SD1667

IC=5A

ICP=9A

1ms

100ms

10ms

DC operation

ITR08264

PC -- Ta

2.4

2.0

1.6

1.2

0.8

0.4

100 140120 1602006040 80

2SB1134 / 2SD1667

No heat sink

1ms to 100ms : single pulse

1.0

0.1

57 2 3

1.0 57 2 3

10 57

100

ITR08263

1ms to 100ms : single pulse

Collector-to-Emitter Voltage, VCE –V

Collector Current, IC–A

Collector-to-Emitter Voltage, VCE –V

Collector Current, IC–A

Collector Dissipation, PC–W

Ambient Temperature, Ta – ˚C

Collector Dissipation, PC–W

Case Temperature, Tc – ˚C