LD 274
GaAs-IR-Lumineszenzdiode
GaAs Infrared Emitter
Lead (Pb) Free Product - RoHS Compliant
2011-03-14 1
Wesentliche Merkmale
• GaAs-LED mit sehr hohem Wirkungsgrad
• Hohe Zuverlässigkeit
• Gute spektrale Anpassung an
Si-Fotoempfänger
• Gehäusegleich mit SFH 484
Anwendungen
• IR-Fernsteuerung von Fernseh- und
Rundfunkgeräten, Videorecordern,
Lichtdimmern
• Gerätefernsteuerungen für Gleich- und
Wechsellichtbetrieb
• Sensorik
• Diskrete Lichtschranken
Typ
Type Bestellnummer
Ordering Code Gehäuse
Package
LD 274 Q62703Q1031 5-mm-LED-Gehäuse (T 1 3/4), graugetöntes Epoxy-
Gießharz, Anschlüsse im 2.54-mm-Raster (1/10’’),
Kathodenkennzeichnung: Kürzerer Lötspieß, flat
5 mm LED package (T 1 3/4), grey colored epoxy resin
lens, solder tabs lead spacing 2.54 mm (1/10’’), cathode
marking: shorter solder lead, flat
LD 274-21)
1) Nur auf Anfrage lieferbar.
1) Available only on request.
Q62703Q1819
LD 274-3 Q62703Q1820
Features
• Very highly efficient GaAs-LED
• High reliability
• Spectral match with silicon photodetectors
• Same package as SFH 484
Applications
• IR remote control of hi-fi and TV-sets, video
tape recorders, dimmers
• Remote control for steady and varying intensity
• Sensor technol ogy
• Discrete interrupters
2011-03-14 2
LD 274
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 … + 100 °C
Sperrspannung
Reverse voltage VR5 V
Durchlassstrom
Forward current IF100 mA
Stoßstrom, tp = 10 μs, D = 0
Surge current IFSM 3 A
Verlustleistung
Power dissipation Ptot 165 mW
Wärmewiderstand
Thermal resistance RthJA 450 K/W
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 100 mA, tp = 20 ms
λpeak 950 nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
IF = 100 mA, tp = 20 ms
Δλ 55 nm
Abstrahlwinkel
Half angle
ϕ
± 10
Grad
Aktive Chipfläche
Active chip area A0.09 mm2
Abmessungen der aktiven Chipfläche
Dimension of the active chip area L × B
L × W0.3 × 0.3 mm²
Abstand Chipoberfläche bis Linsenscheitel
Distance chip front to lens top
H
4.9 … 5.5
mm
Schaltzeiten, Ie von 10% auf 90% und von 90%
auf 10%, bei IF = 100 mA, RL = 50 Ω
Switching times, Ie from 10% to 90% and from
90% to 10%, IF = 100 mA, RL = 50 Ω
tr, tf0.5 μs
LD 274
2011-03-14 3
Kapazität
Capacitance
VR = 0 V, f = 1 MHz
Co25 pF
Durchlassspannung
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 μs
VF
VF
1.30 (≤ 1.5)
1.90 (≤ 2.5)
V
V
Sperrstrom, VR = 5 V
Reverse current IR0.01 (≤ 1) μA
Gesamtstrahlungsfluss
Total radiant flux
IF = 100 mA, tp = 20 ms
Φe20 mW
Temperaturkoeffizient von Ie bzw. Φe,
IF = 100 mA
Temperature coefficient of Ie or Φe,
IF = 100 mA
TCI – 0.55 %/K
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA TCV– 1.5 mV/K
Temperaturkoeffizient von λ, IF = 100 mA
Temperature coefficient of λ, IF = 100 mA TCλ+ 0.3 nm/K
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
2011-03-14 4
LD 274
Gruppierung der Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel Ω = 0.001 sr
Grouping of Radiant Intensity Ie in Axial Direction
at a solid angle of Ω = 0.001 sr
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
LD 274 LD 274-21) LD 274-3
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie min
Ie max
50
–50
100 80
–mW/sr
mW/sr
Strahlstärke
Radiant intensity
IF = 1 A, tp = 100 μs
Ie typ.
700
600
800
mW/sr
1) Nur auf Anfrage lieferbar.
1) Available only on request.
LD 274
2011-03-14 5
Relative Spectral Emission
Ιrel = f (λ)
Forward Current
IF = f (VF), single pulse, tp = 20 μs
Radiation Characteristics,
Ιrel = f (ϕ)
OHRD1938
λ
rel
Ι
0880 920 960 1000
nm
1060
20
40
60
80
%
100
V
OHR01041
F
F
Ι
1
1
10
0
10
-1
10
10
-2
A
1.5 2 2.5 3 3.5 4 V 4.5
max.
typ.
OHR01882
02040 60 80 100 1200.40.60.81.0
100
90
80
70
60
50
0
10203040
0
0.2
0.4
0.6
0.8
1.0
ϕ
Radiant Intensity
Single pulse, tp = 20 μs
Permissible Pulse Handling
Capability IF = f (τ), TC ≤ 25 °C,
duty cycle D = parameter
Ιe
Ιe 100 mA = f (IF)
Ι
OHR01038
F
-1
10
10 0
1
10
2
10
10 -2 -1
10 0
10 A 10 1
Ι
e
Ι
e(100 mA)
t
OHR00860
p
-5
10
10
2
Ι
F
10
3
10
4
5
DC
0.2
0.5
0.1
0.005
0.01
0.02
0.05
t
p
T
Ι
F
t
p
T
D=
5
mA
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10s
D=
Max. Permissible Forward Current
IF = f (TA)
OHR00883
0
F
Ι
0
20
40
60
80
100
120
20 40 60 80 100 120
mA
˚C
T
A
R
thjA
= 450 K/W
2011-03-14 6
LD 274
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
Empfohlenes Lötpaddesign Wellenlöten (TTW)
Recommended Solder Pad TTW Soldering
Maße in mm (inch) / Dimensions in mm (inch).
5.9
5.5
0.6
0.4
ø5.1
ø4.8
2.54 mm
spacing
7.8
7.5
9.0
8.2
5.7
5.1
29
27
1.8
1.2
0.8
0.4
Area not flat
0.6
0.4
Cathode Chip position
GEX06051
4 (0.157)
OHLPY985
4.8 (0.189)
LD 274
2011-03-14 7
Lötbedingungen
Soldering Conditions
Wellenlöten (TTW) (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
Published by
OSRAM Opto Semiconductors GmbH
Leibnizstrasse 4, D-93055 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assu red characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in que stion please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support dev ices or systems 2 with the express written approval of OSRAM OS.
1 A critical componen t is a component usedin a life-support device or syste m whose failure can reasonably be expected
to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.
2 Life support devices or syste ms are intended (a) to be implanted in the human body, o r (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
OHLY0598
0
050 100 150 200 250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s 2 K/s
ca 200 K/s
CC... 130100
2 K/s Zwangskühlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves
