NTE128P (NPN) & NTE129P (PNP)
Silicon Complementary Transistors
General Purpose Amp
Description:
The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use
in general purpose power amplifier and switching applications.
Features:
DHigh VCE Ratings
DExceptional Power Dissipation Capability
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO 100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCEO 80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current , IC1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, PTOT
TA = +25°C 0.850W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC = +25°C 2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, RthJA 147°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, RthJC 62.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Breakdown Voltage BVCEO IC = 10mA, IB = 0 80 – – V
Collector Cutoff Current ICBO VCB = 80V – – 100 nA
Emitter Cutoff Current IEBO VEB = 4V – – 100 nA
DC Current Gain hFE IC = 10mA, VCE = 2V 100 – –
IC = 350mA, VCE = 2V 100 – 300
Collector–Emitter Saturation Voltage VCE(sat) IC = 350mA – – 0.35 V
Current Gain Bandwidth Product fTIC = 50mA 50 – –
Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz – – 15 pF
.100 (2.54)
.200 (5.08)
.180 (4.57)
.018 (0.46) .015 (0.38)
.050 (1.27) .050 (1.27)
3.050 (1.27)
.090 (2.28) R
.180
(4.57)
.594
(15.09)
.140
(3.55)
E B C
