0.35 Ω CMOS 1.65 V to 3.6 V
Single SPDT Switch/2:1 MUX
ADG839
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
Fax: 781.326.8703 © 2004 Analog Devices, Inc. All rights reserved.
FEATURES
1.65 V to 3.6 V operation
Ultralow on resistance:
0.35 Ω typical
0.5 Ω max at 2.7 V supply
Excellent audio performance, ultralow distortion:
0.055 Ω typical
0.09 Ω max RON flatness
High current carrying capability:
300 mA continuous
500 mA peak current at 3.3 V
Automotive temperature range: –40°C to +125°C
Rail-to-rail switching operation
Typical power consumption (<0.1 µW)
FUNCTIONAL BLOCK DIAGRAM
04449-001
SWITCHES SHOWN
FOR A LOGIC 1 INPUT
S
2
S
1
ADG839
D
IN
Figure 1.
APPLICATIONS
Cellular phones
PDAs
MP3 players
Power routing
Battery-powered systems
PCMCIA cards
Modems
Audio and video signal routing
Communication systems
PRODUCT HIGHLIGHTS
1. 0.6 Ω over full temperature range of –40°C to +125°C.
2. Compatible with 1.8 V CMOS logic.
3. High current handling capability (300 mA continuous
current at 3.3 V).
4. Low THD + N (0.01% typ).
5. Tiny SC70 package.
GENERAL DESCRIPTION
The ADG839 is a low voltage CMOS device containing a single-
pole, double-throw (SPDT) switch. This device offers ultralow
on resistance of less than 0.6 Ω over the full temperature range.
The ADG839 is fully specified for 1.8 V, 2.5 V, and 3.3 V supply
operation.
Each switch conducts equally well in both directions when on
and has an input signal range that extends to the supplies. The
ADG839 exhibits break-before-make switching action.
The ADG839 is available in a 6-lead SC70 package.
Table 1. ADG839 Truth Table
Logic Switch 2 (S2) Switch 1 (S1)
0 Off On
1 On Off
ADG839
Rev. 0 | Page 2 of 16
TABLE OF CONTENTS
Specifications—2.7 V to 3.6 V ........................................................ 3
Specifications—2.3 V to 2.7 V ........................................................ 4
Specifications—1.65 V to 1.95 V .................................................... 5
Absolute Maximum Ratings............................................................ 6
ESD Caution.................................................................................. 6
Pin Configuration and Function Descriptions............................. 7
Typical Performance Characteristics ..............................................8
Ter mi no lo g y .................................................................................... 11
Test Circuits ..................................................................................... 12
Outline Dimensions ....................................................................... 14
Ordering Guide .......................................................................... 14
REVISION HISTORY
10/04—Initial Version: Revision 0
ADG839
Rev. 0 | Page 3 of 16
SPECIFICATIONS1—2.7 V TO 3.6 V
VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.
Table 2.
−40°C to −40°C to
Parameter +25°C +85°C +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V VDD = 2.7 V
On Resistance (RON) 0.35 Ω typ VDD = 2.7 V, VS = 0 V to VDD, IS = 100 mA;
0.5 0.56 0.61 Ω max Figure 19
On Resistance Match between 0.04 Ω typ VDD = 2.7 V, VS = 0.9 V, IS = 100 mA
Channels (∆RON) 0.075 0.085 0.095 Ω max
On Resistance Flatness 0.055 Ω typ VDD = 2.7 V, VS = 0 V to VDD,
(RFLAT (ON)) 0.07 0.082 0.09 Ω max IS = 100 mA
LEAKAGE CURRENTS VDD = 3.6 V
Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/3.3 V, VD = 3.3 V/0.6 V; Figure 20
Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 3.3 V; Figure 21
DIGITAL INPUTS
Input High Voltage, VINH 2 V min
Input Low Voltage, VINL 0.8 V max
Input Current
IINL or IINH 0.005 µA typ VIN = VINL or VINH
±0.1 µA max
CIN, Digital Input Capacitance 3.2 pF typ
DYNAMIC CHARACTERISTICS2
tON 12 ns typ RL = 50 Ω, CL = 35 pF
16 18 19 ns max VS = 1.5 V/0 V; Figure 22
tOFF 6.5 ns typ RL = 50 Ω, CL = 35 pF
8.5 9 9.5 ns max VS = 1.5 V; Figure 22
Break-Before-Make Time Delay 5 ns typ RL = 50 Ω, CL = 35 pF; Figure 23
(tBBM) 1 ns min VS1 = VS2 = 1.5 V;
Charge Injection 70 pC typ VS = 1.5 V, RS = 0 Ω, CL = 1 nF; Figure 24
Off Isolation −57 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 25
Channel-to-Channel Crosstalk −57 dB typ
S1 −S2;
RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 26
Total Harmonic Distortion
(THD + N)
0.013 % RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 3 V p-p
Insertion Loss −0.01 dB typ RL = 50 Ω, CL = 5 pF; Figure 27
−3 dB Bandwidth 25 MHz typ RL = 50 Ω, CL = 5 pF; Figure 27
CS (OFF) 74 pF typ
CD, CS (ON) 120 pF typ VDD = 3.6 V
POWER REQUIREMENTS Digital inputs = 0 V or 3.6 V
IDD 0.003 µA typ
1 4 µA max
1 Temperature range for the Y version is −40°C to +125°C.
2 Guaranteed by design; not subject to production test.
ADG839
Rev. 0 | Page 4 of 16
SPECIFICATIONS1—2.3 V TO 2.7 V
VDD = 2.5 V ± 0.2 V, GND = 0 V, unless otherwise noted.
Table 3.
−40°C to −40°C to
Parameter +25°C +85°C +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V
On Resistance (RON) 0.35 Ω typ VDD = 2.3 V, VS = 0 V to VDD,
0.5 0.55 0.6 Ω max IS = 100 mA; Figure 19
On Resistance Match between 0.04 Ω typ VDD = 2.3 V, VS = 0.95 V,
Channels (∆RON) 0.075 0.085 0.095 Ω max IS = 100 mA
On Resistance Flatness (RFLAT (ON)) 0.045 Ω typ VDD = 2.3 V, VS = 0 V to VDD,
0.13 0.13 Ω max IS = 100 mA
LEAKAGE CURRENTS VDD = 2.7 V
Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/2.4 V, VD = 2.4 V/0.6 V; Figure 20
Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 2.4 V; Figure 21
DIGITAL INPUTS
Input High Voltage, VINH 1.7 V min
Input Low Voltage, VINL 0.7 V max
Input Current
IINL or IINH 0.005 µA typ VIN = VINL or VINH
±0.1 µA max
CIN, Digital Input Capacitance 3.2 pF typ
DYNAMIC CHARACTERISTICS2
tON 14.5 ns typ RL = 50 Ω, CL = 35 pF
18 20 21 ns max VS = 1.5 V/0 V; Figure 22
tOFF 7.5 ns typ RL = 50 Ω, CL = 35 pF
9.2 9.5 9.8 ns max VS = 1.5 V; Figure 22
Break-before-Make Time Delay (tBBM) 7 ns typ RL = 50 Ω, CL = 35 pF; Figure 23
1 ns min VS1 = VS2 = 1.5 V;
Charge Injection 60 pC typ VS = 1.25 V, RS = 0 Ω, CL = 1 nF; Figure 24
Off Isolation −57 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 25
Channel-to-Channel Crosstalk −57 dB typ S1−S2;
RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 26
Total Harmonic Distortion (THD + N) 0.021 % RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 2 V p-p
Insertion Loss −0.01 dB typ RL = 50 Ω, CL = 5 pF; Figure 27
–3 dB Bandwidth 25 MHz typ RL = 50 Ω, CL = 5 pF; Figure 27
CS (OFF) 78 pF typ
CD, CS (ON) 127 pF typ VDD = 2.7 V
POWER REQUIREMENTS Digital inputs = 0 V or 2.7 V
IDD 0.003 µA typ
1 4 µA max
1 Temperature range for the Y version is −40°C to +125°C.
2 Guaranteed by design; not subject to production test.
ADG839
Rev. 0 | Page 5 of 16
SPECIFICATIONS1—1.65 V TO 1.95 V
VDD = 1.65 V ± 1.95 V, GND = 0 V, unless otherwise noted.
Table 4.
−40°C to −40°C to
Parameter +25°C +85°C +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V
On Resistance (RON) 0.5 Ω typ VDD = 1.8 V, VS = 0 V to VDD, IS = 100 mA;
0.8 1.2 1.2 Ω max Figure 19
1.3 2.5 2.5 Ω max VDD = 1.65 V, VS = 0 V to VDD, IS = 100 mA
On Resistance Match between 0.04 Ω typ VDD = 1.65 V, VS = TBD, IS = 100 mA
Channels (∆RON) 0.075 0.08 0.08 Ω max IS = 100 mA
On Resistance Flatness (RFLAT (ON)) 0.3 Ω typ VDD = 1.65 V, VS = 0 V to VDD, IS = 100 mA
LEAKAGE CURRENTS VDD = 1.95 V
Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/1.65 V, VD = 1.65 V/0.6 V;
Figure 20
Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 1.65 V; Figure 21
DIGITAL INPUTS
Input High Voltage, VINH 0.65 VDD V min
Input Low Voltage, VINL 0.35 VDD V max
Input Current
IINL or IINH 0.005 µA typ VIN = VINL or VINH
±0.1 µA max
CIN, Digital Input Capacitance 3.2 pF typ
DYNAMIC CHARACTERISTICS2
tON 20 ns typ RL = 50 Ω, CL = 35 pF
28 30 31 ns max VS = 1.5 Ω/0 V; Figure 22
tOFF 8 ns typ RL = 50 Ω, CL = 35 pF
10.1 10.5 10.7 ns max VS = 1.5 V; Figure 22
Break-before-Make Time Delay (tBBM) 12 ns typ RL = 50 Ω, CL = 35 pF
1 ns min VS1 = VS2 = 1 V; Figure 23
Charge Injection 50 pC typ VS = 1 V, RS = 0 V, CL = 1 nF; Figure 24
Off Isolation −57 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 25
Channel-to-Channel Crosstalk −57 dB typ S1 −S2;
R
L = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 26
Total Harmonic Distortion (THD + N) 0.033 % RL = 32 Ω, f = 20 Hz to 20 kHz,
VS = 1 V p-p
Insertion Loss −0.01 dB typ RL = 50 Ω, CL = 5 pF; Figure 27
–3 dB Bandwidth 25 MHz typ RL = 50 Ω, CL = 5 pF; Figure 27
CS (OFF) 83 pF typ VDD = 1.95 V
CD, CS (ON) 132 pF typ Digital inputs = 0 V or 1.95 V
POWER REQUIREMENTS Digital inputs = 0 V or 1.95 V
IDD 0.003 µA typ
1 4 µA max
1 Temperature range for the Y version is −40°C to +125°C.
2 Guaranteed by design; not subject to production test.
ADG839
Rev. 0 | Page 6 of 16
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 5.
Parameter Rating
VDD to GND −0.3 V to +4.6 V
Analog Inputs1−0.3 V to VDD + 0.3 V
Digital Inputs −0.3 V to 4.6 V or 10 mA,
whichever occurs first
Peak Current, S or D
3.3 V Operation 500 mA
2.5 V Operation 460 mA
1.8 V Operation 420 mA (pulsed at 1 ms,
10% duty cycle max)
Continuous Current, S or D
3.3 V Operation 300 mA
2.5 V Operation 275 mA
1.8 V Operation 250 mA
Operating Temperature Range
Automotive (Y Version) −40°C to +125°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
SC70 Package 332°C/W
θJA Thermal Impedance 120°C/W
Lead Temperature,
Soldering (10 seconds)
300°C
IR Reflow, Peak Temperature 220°C
___________________________________________________________
1 Overvoltages at S or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
ADG839
Rev. 0 | Page 7 of 16
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
ADG839
TOP VIEW
(Not to Scale)
IN 1
V
DD
2
GND 3
S2
D
S1
6
5
4
04449-002
Figure 2. Pin Configuration
Table 6. Pin Function Descriptions
Pin No. Mnemonic Description
1 IN Logic control input.
2 VDD Most positive power supply potential.
3 GND Ground (0 V) reference.
4, 6 S1, S2 Source terminal. Can be an input or output.
5 D Drain terminal. Can be an input or output.
For more information, refer to the Terminology section.
ADG839
Rev. 0 | Page 8 of 16
TYPICAL PERFORMANCE CHARACTERISTICS
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
00 0.5 1.0 1.5 2.0 2.5 3.0 3.5
04449-022
V
D
, V
S
(V)
ON RESISTANCE (Ω)
V
DD
= 3.0V
V
DD
= 3.3V
V
DD
= 3.6V
T
A
= 25°C
Figure 3. On Resistance vs. VD (VS) VDD = 3 V to 3.6 V
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
00 0.5 1.0 1.5 2.0 2.5
04449-023
V
D
, V
S
(V)
ON RESISTANCE (Ω)
V
DD
= 2.3V
V
DD
= 2.5V
V
DD
= 2.7V
T
A
= 25°C
Figure 4. On Resistance vs. VD (VS) VDD = 2.5 V ± 0.2 V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
00 2.01.81.61.41.21.00.80.60.40.2
04449-024
V
D
, V
S
(V)
ON RESISTANCE (Ω)
V
DD
= 1.65V
V
DD
= 1.80V
V
DD
= 1.95V
T
A
= 25°C
Figure 5. On Resistance vs. VD (VS) VDD = 1.8 V ± 0.15 V
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
00 3.02.52.01.51.00.5
04449-025
V
D
, V
S
(V)
ON RESISTANCE (Ω)
+125°C
+85°C
+25°C
–40°C
V
DD
= 3.3V
Figure 6. On Resistance vs. VD (VS) for Different Temperature, VDD = 3.3 V
0.6
0.5
0.4
0.3
0.2
0.1
00 2.52.01.51.00.5
04449-026
V
D
, V
S
(V)
ON RESISTANCE (Ω)
+125°C
–40°C
+85°C
+25°C
V
DD
= 2.5V
Figure 7. On Resistance vs. VD (VS) for Different Temperature, VDD = 2.5 V
0.7
0.6
0.5
0.4
0.3
0.2
0.1
00 1.81.61.41.21.00.80.60.40.2
04449-027
V
D
, V
S
(V)
ON RESISTANCE (Ω)
+125°C
–40°C
+85°C
+25°C
V
DD
= 1.8V
Figure 8. On Resistance vs. VD (VS) for Different Temperature, VDD = 1.8 V
ADG839
Rev. 0 | Page 9 of 16
100
90
80
70
60
50
40
30
20
10
0
–10
–40 120100806040200–20
04449-012
TEMPERATURE (°C)
CURRENT (nA)
I
D
, I
S
(ON)
V
DD
= 3.3V
I
S
(OFF)
Figure 9. Leakage Current vs. Temperature, VDD = 3.3 V
80
70
60
50
40
30
20
10
0
–10
–40 120100806040200–20
04449-013
TEMPERATURE (°C)
CURRENT (nA)
I
D
, I
S
(ON)
I
S
(OFF)
V
DD
= 2.5V
Figure 10. Leakage Current vs. Temperature, VDD = 2.5 V
70
60
50
40
30
20
10
0
–10
–40 120100806040200–20
04449-014
TEMPERATURE (°C)
CURRENT (nA)
I
D
, I
S
(ON)
I
S
(OFF)
V
DD
= 1.8V
Figure 11. Leakage Current vs. Temperature, VDD = 1.8 V
180
160
140
120
100
80
60
40
20
00 0.5 1.0 1.5 2.0 2.5 3.0
04449-015
V
D
(V)
CHARGE INJECTION (pC)
V
DD
= 3.3V
V
DD
= 2.5V
V
DD
= 1.8V
T
A
= 25°C
Figure 12. Charge Injection vs. Source Voltage
25
t
ON
t
OFF
20
15
10
5
0
–40 –20 0 20 40 60 80 100 120
04449-016
TEMPERATURE (°C)
TIME (ns)
V
DD
= 1.8V
V
DD
= 2.5V
V
DD
= 3.3V
V
DD
= 1.8V
V
DD
= 2.5V
V
DD
= 3.3V
Figure 13. tON/tOFF Times vs. Temperature
1
–12
–11
–10
–9
–8
–7
–6
–5
–4
–3
–2
–1
0
100 1k 100k 1M 10M10k 100M
04449-017
FREQUENCY (Hz)
ON RESPONSE (dB)
T
A
= 25°C
V
DD
= 3.3V/2.5V/1.8V
Figure 14. Bandwidth
ADG839
Rev. 0 | Page 10 of 16
0
–120
–100
–80
–60
–40
–20
100 1k 100k 1M 10M 100M10k 1G
04449-018
FREQUENCY (Hz)
OFF ISOLATION (dB)
T
A
= 25°C
V
DD
= 3.3V/2.5V/1.8V
Figure 15. Off Isolation vs. Frequency
0
–120
–100
–80
–60
–40
–20
100 1k 100k 1M 10M 100M10k 1G
04449-019
FREQUENCY (Hz)
CROSS TALK (dB)
T
A
= 25°C
V
DD
= 3.3V/2.5V/1.8V
Figure 16. Crosstalk vs. Frequency
0.05
0.01
0.02
0.03
0.04
10 100 10k1k 100k
04449-020
FREQUENCY (Hz)
THD+N (%)
T
A
= 25°C
32Ω LOAD
V
DD
= 1.8V; V p-p = 1V
V
DD
= 2.5V; V p-p = 2V
V
DD
= 3.3V; V p-p = 3V
Figure 17. Total Harmonic Distortion + Noise
0
–120
–100
–80
–60
–40
–20
100 1k 100k10k 1M
04449-021
FREQUENCY (Hz)
PSRR (dB)
T
A
= 25°C
V
DD
= 3.3V/2.5V/1.8V
Figure 18. AC PSRR
ADG839
Rev. 0 | Page 11 of 16
TERMINOLOGY
IDD
Positive supply current.
VD (VS)
Analog voltage on Terminals D and S.
RON
Ohmic resistance between D and S.
RFLAT (ON)
Flatness is defined as the difference between the maximum and
minimum value of on resistance as measured.
∆RON
On resistance match between any two channels.
IS (OFF)
Source leakage current with the switch off.
ID (OFF)
Drain leakage current with the switch off.
ID, IS (ON)
Channel leakage current with the switch on.
VINL
Maximum input voltage for Logic 0.
VINH
Minimum input voltage for Logic 1.
IINL (IINH)
Input current of the digital input.
CS (OFF)
Off switch source capacitance. Measured with reference to
ground.
CD (OFF)
Off switch drain capacitance. Measured with reference to
ground.
CD, CS (ON)
On switch capacitance. Measured with reference to ground.
CIN
Digital input capacitance.
tON
Delay time between the 50% and the 90% points of the digital
input and switch on condition.
tOFF
Delay time between the 50% and the 90% points of the digital
input and switch off condition.
tBBM
On or off time measured between the 80% points of both
switches when switching from one to another.
Charge Injection
A measure of the glitch impulse transferred from the digital
input to the analog output during on-off switching.
Off Isolation
A measure of unwanted signal coupling through an off switch.
Crosstalk
A measure of unwanted signal which is coupled through from
one channel to another as a result of parasitic capacitance.
−3 dB Bandwidth
The frequency at which the output is attenuated by 3 dB.
On Response
The frequency response of the on switch.
Insertion Loss
The attenuation between the input and output ports of the
switch when the switch is in the on condition, and is due to the
on resistance of the switch.
THD + N
The ratio of the harmonic amplitudes plus noise of a signal to
the fundamental.
PSRR
Power Supply Rejection Ratio. This is a measure of the coupling
of unwanted ac signals on the power supply to the switch
output when the supply is not decoupled.
ADG839
Rev. 0 | Page 12 of 16
TEST CIRCUITS
04449-003
SD
V
S
V
I
DS
Figure 19. On Resistance
SD
V
S
V
D
I
S
(OFF) I
D
(OFF)
A A
04449-004
Figure 20. Off Leakage
SD
V
D
I
D
(ON)
NC A
04449-005
Figure 21. On Leakage
04449-006
V
OUT
t
ON
t
OFF
V
IN
50% 50%
V
IN
50% 50%
90% 90%
D
GND
RL
50Ω
C
L
35pF
V
DD
V
OUT
V
S
V
IN
V
DD
0.1µF
IN
S2
S1
Figure 22. Switching Times, tON, tOFF
04449-007
V
OUT
V
IN
t
BBM
t
BBM
80% 80%
D
IN
GND
RL
50Ω
C
L
35pF
V
DD
V
OUT
V
S
V
DD
0.1µF
S2
S1
V
IN
Figure 23. Break-before-Make Time Delay, tBBM
04449-008
V
IN
(NORMALLY
CLOSED SWITCH)
V
IN
(NORMALLY
OPEN SWITCH)
V
OUT
ON
Q
INJ
= C
L
×∆V
OUT
OFF
∆V
OUT
IN
GND
V
DD
V
DD
0.1µF
V
S
C
L
1nF
V
OUT
NC
S2
S1
D
Figure 24. Charge Injection
ADG839
Rev. 0 | Page 13 of 16
04449-009
V
DD
V
S
V
DD
V
IN
NC
IN
NETWORK
ANALYZER
S1 S2
GND
OFF ISOLATION = 20 LOG
D
50Ω50Ω
V
OUT
R
L
50Ω
0.1µF
V
OUT
V
S
Figure 25. Off Isolation
04449-010
VOUT
VDD
IN
VDD
GND
VS
RL
50ΩR
50Ω
0.1µF
50Ω
S1
D
S2
CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG VOUT
VS
NETWORK
ANALYZER
Figure 26. Channel-to-Channel Crosstalk
04449-011
V
DD
V
S
V
DD
V
IN
NC
IN
NETWORK
ANALYZER
S1 S2
GND
D
50Ω
V
OUT
R
L
50Ω
0.1µF
INSERTION LOSS = 20 LOG V
OUT
WITH SWITCH
V
OUT
WITHOUT SWITCH
Figure 27. Bandwidth
04449-028
V
S
V
DD
V
DD
V
DD
± 50mV
BIAS
TEE
NETWORK
ANALYZER
GND
50Ω
V
OUT
NC
S1
IN
D
S2 NC
V
IN
R
L
50Ω
Figure 27. PSRR
ADG839
Rev. 0 | Page 14 of 16
OUTLINE DIMENSIONS
0.22
0.08 0.46
0.36
0.26
8°
4°
0°
0.30
0.15
1.00
0.90
0.70
SEATING
PLANE
1.10 MAX
3
5 4
2
6
1
2.00 BSC
PIN 1
2.10 BSC
0.65 BSC
1.25 BSC
1.30 BSC
0.10 MAX
0.10 COPLANARITY
COMPLIANT TO JEDEC STANDARDS MO-203AB
Figure 28. 6-Lead Thin Shrink Small Outline Transistor Package [SC70]
(KS-6)
Dimensions shown in millimeters
ORDERING GUIDE
Model Temperature Range Package Description Package Option Branding1
ADG839YKSZ-500RL72–40°C to +125°C 6-Lead Thin Shrink Small Outline Transistor Package KS-6 SUA
ADG839YKSZ-REEL2–40°C to +125°C 6-Lead Thin Shrink Small Outline Transistor Package KS-6 SUA
ADG839YKSZ-REEL72–40°C to +125°C 6-Lead Thin Shrink Small Outline Transistor Package KS-6 SUA
1 Branding on this package is limited to three characters due to space constraints.
2 Z = Pb-free part.
ADG839
Rev. 0 | Page 15 of 16
NOTES
ADG839
Rev. 0 | Page 16 of 16
NOTES
© 2004 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D04449–0–10/04(0)
