NTE464 (P-Ch) & NTE465 (N-Ch) Silicon Complementary MOSFET Transistors Enhancement Mode for Switching Applications Absolute Maximum Ratings: Drain-Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Drain-Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7mW/C Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.56mW/C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +175C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit -25 - - V VDS = -10V, VGS = 0, TA = +25C - - -10 nA VDS = -10V, VGS = 0, TA = +150C - - -10 A VGS = 30V, VDS = 0 - - 10 pA OFF Characteristics Drain-Source Breakdown Voltage Zero-Gate-Voltage Drain Current Gate Reverse Current V(BR)DSX ID = -10A, VGS = 0 IDSS IGSS ON Characteristics Gate Threshold Voltage VGS(Th) VDS = -10V, ID = -10A -1 - -5 V Drain-Source On-Voltage VDS(on) ID = -2mA, VGS = -10V - - -1 V ID(on) VGS = -10V, VDS = -10V -3 - - mA On-State Drain Current Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit - - 600 - - 300 1000 - - mhos Small-Signal Characteristics Drain-Source Resistance NTE464 rds(on) VGS = -10V, ID = 0, f = 1kHz NTE465 Forward Transfer Admittance |yfs| VDS = -10V, ID = 2mA, f = 1kHz Input Capacitance Ciss VDS = -10V, VGS = 0, f = 140kHz - - 5 pF Reverse Transfer Capacitance Crss VDS = 0, VGS = 0, f = 140kHz - - 1.3 pF Drain-Substrate Capacitance NTE464 Cd(sub) VD(SUB) = -10V, f = 140kHz - - 4 pF - - 5 pF - - 45 ns tr - - 65 ns td2 - - 60 ns tf - - 100 ns NTE465 Switching Characteristics Turn-On Delay Rise Time Turn-Off Delay Fall Time td1 ID = -2mA, VDS = -10V, VGS = -10V .220 (5.58) Dia .185 (4.7) Dia .190 (4.82) .030 (.762) .500 (12.7) Min .018 (0.45) Dia Gate Source Drain 45 Case .040 (1.02)