NTE464 (P–Ch) & NTE465 (N–Ch)
Silicon Complementary MOSFET Transistors
Enhancement Mode for Switching Applications
Absolute Maximum Ratings:
Drain–Source Voltage, VDS 25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain–Gate Voltage, VDG 30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–Source Voltage, VGS ±30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current, IG30mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (TA = +25°C), PD300mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 1.7mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (TC = +25°C), PD800mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 4.56mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ+175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –55° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Drain–Source Breakdown Voltage V(BR)DSX ID = –10µA, VGS = 0 –25 V
Zero–Gate–Voltage Drain Current IDSS VDS = –10V, VGS = 0, TA = +25°C –10 nA
VDS = –10V, VGS = 0, TA = +150°C –10 µA
Gate Reverse Current IGSS VGS = ±30V, VDS = 0 ±10 pA
ON Characteristics
Gate Threshold Voltage VGS(Th) VDS = –10V, ID = –10µA –1 –5 V
Drain–Source On–Voltage VDS(on) ID = –2mA, VGS = –10V –1 V
On–State Drain Current ID(on) VGS = –10V, VDS = –10V –3 mA
Electrical Characteristics (Contd): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
SmallSignal Characteristics
DrainSource Resistance
NTE464 rds(on) VGS = 10V, ID = 0, f = 1kHz 600
NTE465 300
Forward Transfer Admittance |yfs| VDS = 10V, ID = 2mA, f = 1kHz 1000 µmhos
Input Capacitance Ciss VDS = 10V, VGS = 0, f = 140kHz 5 pF
Reverse Transfer Capacitance Crss VDS = 0, VGS = 0, f = 140kHz 1.3 pF
DrainSubstrate Capacitance
NTE464 Cd(sub) VD(SUB) = 10V, f = 140kHz 4pF
NTE465 5 pF
Switching Characteristics
TurnOn Delay td1 ID = 2mA, VDS = 10V, VGS = 10V 45 ns
Rise Time tr 65 ns
TurnOff Delay td2 60 ns
Fall Time tf 100 ns
.220 (5.58) Dia
.185 (4.7) Dia
.030 (.762)
.040 (1.02)
.018 (0.45) Dia
45°
Source Gate
Drain
Case
.190
(4.82)
.500
(12.7)
Min