Document Number: 94314 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jan-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Schottky Rectifier, 2 x 3 A
VS-MBRD650CTPbF, VS-MBRD660CTPbF
Vishay Semiconductors
FEATURES
• Popular D-PAK outline
• Center tap configuration
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Compliant to RoHS Directive 2002/95/EC
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION
The VS-MBRD650CTPbF, VS-MBRD660CTPbF surface
mount, center tap, Schottky rectifier series has been
designed for applications requiring low forward drop and
small foot prints on PC boards. Typical applications are in
disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
IF(AV) 2 x 3 A
VR50 V, 60 V
VF at IF0.65 V
IRM 15 mA at 125 °C
TJ max. 150 °C
Diode variation Common cathode
EAS 6 mJ
Base
common
cathode
Common
cathode
2
4
13
Anode Anode
D-PAK (TO-252AA)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 6 A
VRRM 50/60 V
IFSM tp = 5 μs sine 490 A
VF3 Apk, TJ = 125 °C (per leg) 0.65 V
TJRange - 40 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRD650CTPbF VS-MBRD660CTPbF UNITS
Maximum DC reverse voltage VR50 60 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
per leg
IF(AV) 50 % duty cycle at TC = 128 °C, rectangular waveform
3.0
A
per device 6
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
VRRM applied
490
10 ms sine or 6 ms rect. pulse 75
Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 1 A, L = 12 mH 6 mJ
Repetitive avalanche current per leg IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 0.6 A
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94314
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 14-Jan-11
VS-MBRD650CTPbF, VS-MBRD660CTPbF
Vishay Semiconductors Schottky Rectifier, 2 x 3 A
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
Note
(1) thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1 VFM (1)
3 A TJ = 25 °C 0.7
V
6 A 0.9
3 A TJ = 125 °C 0.65
6 A 0.85
Maximum reverse leakage current per leg
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
0.1 mA
TJ = 125 °C 15
Typical junction capacitance per leg CTVR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 145 pF
Typical series inductance per leg LSMeasured lead to lead 5 mm from package body 5.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ (1), TStg - 40 to 150 °C
Maximum thermal resistance,
junction to case
per leg RthJC
DC operation
See fig. 4
6
°C/W
per device 3
Maximum thermal resistance,
junction to ambient RthJA 80
Approximate weight 0.3 g
0.01 oz.
Marking device Case style D-PAK (similar to TO-252AA) MBRD650CT
MBRD660CT
dPtot
dTJ
------------- 1
RthJA
--------------<
Document Number: 94314 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jan-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
VS-MBRD650CTPbF, VS-MBRD660CTPbF
Schottky Rectifier, 2 x 3 A Vishay Semiconductors
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
0.1
1
10
I
F
- Instantaneous
Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.4 0.6 0.8 1.0 1.2 1.4 1.60.2
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
0.001
1
10
100
0.1
0.01
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
10 20 50 60
30 40
0
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
10
100
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
20
10 30 40 60
50
0
TJ = 25 °C
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
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VS-MBRD650CTPbF, VS-MBRD660CTPbF
Vishay Semiconductors Schottky Rectifier, 2 x 3 A
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
100
110
120
130
140
160
150
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
1.00.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0
DC
See note (1)
Square wave (D = 0.50)
80 % rated VR applied
0
0.5
1.5
3.0
2.5
2.0
1.0
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
2
1345
0
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
10
100
1000
IFSM - Non-Repetitive Surge Current (A)
tp - Square Wave Pulse Duration (µs)
100 1000 10 000
10
At any rated load condition
and with rated VRRM applied
following surge
Document Number: 94314 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jan-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5
VS-MBRD650CTPbF, VS-MBRD660CTPbF
Schottky Rectifier, 2 x 3 A Vishay Semiconductors
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95016
Part marking information www.vishay.com/doc?95059
Packaging information www.vishay.com/doc?95033
2- Schottky MBR series
1- Vishay Semiconductors product
3- D = TO-252AA (D-PAK)
4- Current rating (6 = 6 A)
5- Voltage ratings
6- CT = Center tap (dual)
50 = 50 V
60 = 60 V
7- None = Tube (50 pieces)
TR = Tape and reel
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
- PbF = Lead (Pb)-free
8
Device code
51 32 4 6 7 8
MBRVS- D 6 60 CT TR PbF
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 05-Dec-12 1Document Number: 95016
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
D-PAK (TO-252AA)
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension uncontrolled in L5
(3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
(5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6) Dimension b1 and c1 applied to base metal only
(7) Datum A and B to be determined at datum plane H
(8) Outline conforms to JEDEC outline TO-252AA
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 2.18 2.39 0.086 0.094 e 2.29 BSC 0.090 BSC
A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410
b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070
b2 0.76 1.14 0.030 0.045 L1 2.74 BSC 0.108 REF.
b3 4.95 5.46 0.195 0.215 3 L2 0.51 BSC 0.020 BSC
c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 3
c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040
D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 2
D1 5.21 - 0.205 - 3 Ø 0° 10° 0° 10°
E 6.35 6.73 0.250 0.265 5 Ø1 0° 15° 0° 15°
E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35°
Legal Disclaimer Notice
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Revision: 02-Oct-12 1Document Number: 91000
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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