7/27/04
IRG4PH40UD2-EP
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
E
G
n-channel
C
VCES = 1200V
VCE(on) typ. = 2.43V
@VGE = 15V, IC = 21A
UltraFast CoPack IGBT
UltraFast IGBT optimized for high operating
frequencies up to 200kHz in resonant mode
IGBT co-packaged with HEXFREDTM ultrafast
ultra-soft-recovery anti-parallel diode for use in
resonant circuits
Industry standard TO-247AD package with
extended leads
Lead-Free
Benefits
Higher switching frequency capability than
competitive IGBTs
Highest efficiency available
HEXFRED diodes optimized for performance with
IGBTs. Minimized recovery characteristics require
less / no snubbing
PD - 95239
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TO-247AD
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Colle ctor-to-Emitter Voltag e 1200 V
I
C
@ T
C
= 25°C Co ntin uous C olle c tor Cu rr en t 4 1 A
I
C
@ T
C
= 100°C Co ntin uous C olle c tor Cu rr en t 2 1
I
CM
Pul se Colle cto r Current
c
82
I
LM
Cla m ped Inductive Lo ad current
d
82
I
F
@ Tc = 100° C Diode Continuous Forward Current 10
I
FM
Diode Maximum Forward Current 40
V
GE
Gate -to-Em i tt er Volt age ±20 V
P
D
@ T
C
= 25°C Maximum Power D issi pation 160 W
P
D
@ T
C
= 100°C Maximum Power D issi pation 65
T
J
Operating Junction and -55 to +150
T
STG
S torag e Tempe r ature Ra ng e ° C
S torag e Tempe r ature Ra ng e, for 10 se c. 300 ( 0.06 3 in . (1.6m m ) f rom case)
Mo unting T orque , 6- 3 2 or M 3 s c r ew
Thermal / Mechanical Characteristics
Parameter Min. Typ. Max. Units
RθJC Junctio n- to-C a s e- I GBT ––– ––– 0. 77 °C/W
RθJC Junct ion-to-Case- Diode ––– ––– 2.5
RθCS Ca s e- to-Sin k , flat , greased s urfac e ––– 0.2 4 –––
RθJA Junction-to-Ambient, typical socket mount ––– ––– 40
Wt Weight ––– 6 (0.21) ––– g (oz.)
10 lbf
y
in (1.1N
y
m)
Applications
Induction cooking systems
Microwave Ovens
Resonant Circuits
IRG4PH40UD2-EP
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Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
e
1200 — — V
V
GE
= 0V, I
C
= 250µA
V
(BR)ECS Emitter-to-Collector Breakdown Voltage 18 — — V
V
GE
= 0V, I
C
= 1.0A
∆
V
(BR)CES
/
∆
T
JTemperature Coeff. of Breakdown Voltage —0.43—V/°C
V
GE
= 0V, I
C
= 1mA
— 2.43 3.1 V
I
C
= 21A
V
GE
= 15V
V
CE(on) Colle c tor-to -Em i tt er Satu rat ion Vo lt age — 2.9 7 —
I
C
= 41A
See Fig.2, 5
—2.47—
I
C
= 21A, T
J
= 150°C
V
GE(th) G ate Th res hol d Volt age 3. 0 — 6.0
V
CE
= V
GE
, I
C
= 250µA
∆
V
GE(th)
/
∆
T
JThr es hol d Volt ag e t e m p. co effi c i e nt — -11 — mV/°C
V
CE
= V
GE
, I
C
= 250µA
gfe For war d Tr ansco nductance
f
16 24 — S
V
CE
= 100V, I
C
= 21A
I
CES Zero Gate Voltag e Collecto r Current — — 250 µA
V
GE
= 0V, V
CE
= 1200V
— — 5000
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
V
FM Dio de Forw a r d Volt age Dr op — 3.4 3. 8 V
I
F
= 10A
See Fig.13
—3.33.7
I
F
= 10A,
T
J
= 150°C
I
GES G at e- to-Emi t t e r Lea kag e Cur rent — — ±100 nA
V
GE
= ±2 0V
Switching Characteri stics @ T
J
= 25°C (un less otherwi se specified)
Parameter Min. Typ. Max. Units Conditions
Q
gTotal Gate Charge (turn-on) — 100 150
I
C
= 21A
Q
ge Gate-to-Emitt er Charge (turn-on) — 18 24 nC
V
CC
= 400V See Fi g.8
Q
gc Gate-to-Coll ect or Charge (t ur n-on ) — 3 4 50
V
GE
= 15 V
t
d(on) Turn-On delay time — 22 —
t
rRise time — 26 — ns
I
C
= 21A , V
CC
= 800V
t
d(off) Tu r n- Off de l a y t im e — 100 140
V
GE
= 15V, R
G
= 10
Ω
t
fFal l time — 200 300 Energy losses in clu de "t ail" and
E
on Turn-On Switching Loss — 1950 — d iode reverse recovery.
E
off Turn- O f f Sw itc h ing Loss — 1710 — µJ Se e Fi g. 9, 10 , 11 , 18
E
tot To t a l S witc h i n g Lo ss — 36 60 4490
t
d(on) Turn-On delay time — 21 —
T
J
= 150 °C , Se e Fig. 9, 10 , 11, 18
t
rRise time — 25 — ns
I
C
= 21A , V
CC
= 800V
t
d(off) Turn-Off delay time — 220 —
V
GE
= 15V, R
G
= 10
Ω
t
fFal l time — 380 — Energy lo sses include "tai l" and
E
TS Tot a l S witc hin g Lo s s — 6220 — µJ di ode rev e r s e r ec over y .
L
EInternal Emitter Inductance — 13 — nH Measured 5mm from package
C
ies Input C ap ac ita nce — 21 00 —
V
GE
= 0V
C
oes Output Capacitance — 99 — pF
V
CC
= 30V , Se e Fi g.7
C
res Reve rse Tra ns fer C ap ac ita nc e — 1 2 — f = 1.0M H z
t
rr Di ode Reverse Recovery Ti m e — 50 76 n s TJ=2 5 °C See Fi g
—72110 TJ=125°C 14 IF = 8. 0A
I
rr Di ode Peak R everse Recovery Current — 4.4 7.0 A TJ=2 5 ° C S e e Fi g
—5.98.8 TJ=125°C 15 VR = 200V
Q
rr Diode Reverse Recovery Charge — 130 200 nC TJ=25 ° C See Fig
— 250 380 TJ=125°C 16 di/dt = 200A/µ
s
di
(rec)M
/dt
Di ode Peak R ate of Fall of Re covery — 210 — A/µs TJ=2 5 ° C S e e Fi g
During t
b—180— TJ=125°C 17
IRG4PH40UD2-EP
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0.1 110 100
f , Frequency ( kHz )
0
5
10
15
20
25
30
35
40
45
50
Load Current ( A )
For both:
Dut y cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Pow er Dissipati on = 35W
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
60% of rated
voltage
I
Ideal diodes
Square wave:
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
1
10
100
5 6 7 8 9 10
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Cu rrent (A )
GE
C
V = 5 0V
5µs PULSE WIDTH
CC
T = 25 C
Jo
T = 150 C
Jo
1
10
100
1 10
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
V = 15V
20µs PU LSE WID TH
GE
T = 25 C
Jo
T = 150 C
Jo
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
-60 -40 -20 020 40 60 80 100 120 140 160
1.0
2.0
3.0
4.0
T , Jun c tion Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J°
CE
V = 15 V
80 us PU LSE WIDTH
GE
I = A10.5
C
I = A21
C
I = A42
C
25 50 75 100 125 150
0
10
20
30
40
50
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C°
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. D u ty fa c to r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Dur ation ( sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERM AL RESPONSE)
TJ , Junction Temperature ( °C )
IRG4PH40UD2-EP
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Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
020 40 60 80 100 120
QG, T otal Gate Charge (nC)
0
4
8
12
16
20
VGE, Gate-to-Emitter Voltage (V)
VCE = 400V
IC = 21A
010 20 30 40 50
RG, Gate Resistance (Ω)
3.6
3.8
4
4.2
4.4
4.6
4.8
5
Total Swiching Losses (mJ)
VCE = 800V
VGE = 15V
TJ = 25°C
IC = 21A
-60 -40 -20 020 40 60 80 100 120 140 160
TJ, Junct ion Temperature ( °C)
1
10
100
Total Switching Losses (mJ)
RG = 10 Ω
VGE = 15V
VCC = 800V
IC = 42A
IC = 21A
IC = 10.5A
110
VCE, Collector-toEmitter-Voltage(V)
0
500
1000
1500
2000
2500
3000
3500
4000
Capacitance (pF)
Cies
Coes
Cres
VGS = 0V, f = 1 MHZ
Cies = Cge + C gd, Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
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Fig. 12 - Turn-Off SOA
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
010 20 30 40 50
IC, Collecto-to-Emitter (A)
2
4
6
8
10
12
14
16
Total Swiching Losses (mJ)
RG = 10Ω
TJ = 150°C
VCE= 800V
VGE = 15V
1
10
100
1000
1 10 100 1000 1000
0
V = 20V
T = 125 C
GE
Jo
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
SAFE OPERATING AREA
IRG4PH40UD2-EP
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Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt
IRG4PH40UD2-EP
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Same t ype
device as
D.U.T.
D.U.T.
430µF
80%
of Vce
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
Ic
Vce
t1 t2
90% Ic
10% Vce
td(off) tf
Ic
5% Ic
t1+5µ
S
Vce ic d
t
90% Vge
+
Vge
∫
Eoff =
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
∫
Vce ie dt
t2
t1
5% Vce
Ic
Ipk
Vcc 10% Ic
Vce
t1 t2
DUT VOLTAGE
AN D CURRENT
GATE VOLTAGE D.U.T.
+Vg
10% +Vg
90% Ic
tr
td(on)
DIO DE REVERSE
RECOVERY ENERGY
tx
Eon =
∫
Erec = t4
t3
Vd id dt
t4
t3
DIODE RECOVERY
WAVEFORMS
Ic
Vpk
10% Vcc
Irr
10% Irr Vc
c
trr
∫
Qrr = trr
tx
id d t
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Vd Ic dt
Vce Ic dt
Ic dt
Vce Ic dt
IRG4PH40UD2-EP
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Vg GATE SIG NAL
DEVICE UNDER TES
T
CURRE NT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0 t1
t2
D.U.T.
V *
c
50V
L
1000V
6000µF
100V
Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current
Test Circuit
RL=800V
4 X IC @25°C
0 - 800V
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
IRG4PH40UD2-EP
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Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG= 10Ω (figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
TO-247AD package is not recommended for Surface Mount Application.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/04
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
AS S EMB LY YEAR 0 = 200
0
ASSEMBL ED ON WW 35, 2000
I N THE ASSEMBLY LINE "H"
EXAMPLE : THIS IS AN IRGP30B120K D-E
LOT C ODE 5657
WIT H AS S EMBL Y PART NUMBER
DATE CO DE
INTERNATIONAL
RECTIFIER
LOGO
035H
56 57
WE EK 35
LINE H
LOT CODE
Note: "P" in assembly line position
indicates " L ead-Free"
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
