AUTOMOTIVE GRADE AUIRLL014N HEXFET(R) Power MOSFET Features Advanced Planar Technology Low On-Resistance Logic Level Gate Drive Dynamic dv/dt Rating 150C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS 55V RDS(on) max. ID 0.14 2.0A D S D Description Specifically designed for Automotive applications, this cellular design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications Base part number Package Type AUIRLL014N SOT-223 G SOT-223 AUIRLL014N G Gate D Drain Standard Pack Form Quantity Tape and Reel 2500 S Source Orderable Part Number AUIRLL014NTR Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. ID @ TA = 25C Continuous Drain Current, VGS @ 10V 2.8 ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation (PCB Mount) 2.0 1.6 16 2.1 PD @TA = 25C Maximum Power Dissipation (PCB Mount) Linear Derating Factor (PCB Mount) Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range VGS EAS IAR EAR dv/dt TJ TSTG Thermal Resistance Symbol RJA RJA Parameter Junction-to-Ambient (PCB Mount, steady state) Junction-to-Ambient (PCB Mount, steady state) Units A 1.0 8.3 16 32 2.0 0.1 7.2 -55 to + 150 W mW/C V mJ A mJ V/ns C Typ. Max. Units 90 50 120 60 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-29 AUIRLL014N Static @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 55 --- --- V VGS = 0V, ID = 250A --- 0.015 --- V/C Reference to 25C, ID = 1mA --- --- 0.14 VGS = 10V, ID = 2.0A --- --- 0.20 VGS = 5.0V, ID = 1.2A --- --- 0.28 VGS = 4.0V, ID = 1.0A 1.0 --- 2.0 V VDS = VGS, ID = 250A 2.3 --- --- S VDS = 25V, ID = 1.0A --- --- 25 VDS = 55V, VGS = 0V A --- --- 250 VDS = 44V,VGS = 0V,TJ = 150C --- --- 100 VGS = 16V nA --- --- -100 VGS = -16V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Total Gate Charge Qg Qgs Gate-to-Source Charge Qgd Gate-to-Drain Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Reverse Recovery Charge Qrr ton Forward Turn-On Time --- --- --- --- --- --- --- --- --- --- 9.5 1.1 3.0 5.1 4.9 14 2.9 230 66 30 14 1.7 4.4 --- --- --- --- --- --- --- Min. Typ. Max. Units --- --- 1.3 --- --- 16 --- --- --- --- 41 73 1.0 61 110 ID = 2.0A nC VDS = 44V VGS = 10V, See Fig 6 and 9 VDD = 28V ID = 2.0A ns RG = 6.0 RD = 14See Fig. 10 VGS = 0V pF VDS = 25V = 1.0MHz, See Fig.5 Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = 2.0A,VGS = 0V ns TJ = 25C ,IF = 2.0A, nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) VDD = 25V, starting TJ = 25C, L = 4.0mH, RG = 25, IAS = 4.0A. (See fig. 12) ISD 2.0A, di/dt 170A/s, VDD V(BR)DSS, TJ 150C. Pulse width 300s; duty cycle 2%. When mounted on FR-4 board using minimum recommended footprint. When mounted on 1 inch square copper board, for comparison with other SMD devices. 2 2015-10-29 AUIRLL014N 100 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP I D, Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 3.0V 1 0.1 20s PULSE WIDTH TJ = 25C A 1 10 10 3.0V 20s PULSE WIDTH TJ = 150C A 1 0.1 100 1 V DS , Drain-to-Source Voltage (V) 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 100 TJ = 25C TJ = 150C VDS = 25V 20s PULSE WIDTH 1 3.0 4.0 5.0 6.0 A 7.0 VGS , Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 100 Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics 10 10 V DS, Drain-to-Source Voltage (V) I D = 2.0A 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 TJ , Junction Temperature (C) Fig. 4 Normalized On-Resistance vs. Temperature 2015-10-29 AUIRLL014N 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = Cds + C gd V GS , Gate-to-Source Voltage (V) C, Capacitance (pF) 400 Ciss 300 200 Coss 100 Crss 0 1 10 100 I D = 2.0A V DS = 44V V DS = 28V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 9 0 A 0 VDS , Drain-to-Source Voltage (V) 6 9 12 A 15 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R DS(on) I D , Drain Current (A) ISD , Reverse Drain Current (A) 3 10 TJ = 150C TJ = 25C 1 10s 10 100s 1ms 1 10ms VGS = 0V 0.1 0.4 4 0.6 0.8 1.0 1.2 1.4 A 1.6 TA = 25C TJ = 150C Single Pulse 0.1 1 A 10 100 VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 2015-10-29 AUIRLL014N Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms Thermal Response (ZthJA ) 1000 100 D = 0.50 0.20 10 0.10 0.05 PDM 0.02 t 1 t2 0.01 1 Notes: 1. Duty factor D = t SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 1 /t 2 2. Peak TJ = PDM x Z thJA + T A 0.01 0.1 1 10 100 A 1000 t 1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 2015-10-29 AUIRLL014N 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A 0.01 EAS , Single Pulse Avalanche Energy (mJ) 80 TOP BOTTOM ID 1.8A 3.2A 4.0A 60 40 20 0 VDD = 25V 25 50 75 100 125 A 150 Starting TJ , Junction Temperature (C) Fig 12a. Unclamped Inductive Test Circuit Fig 12c. Maximum Avalanche Energy Vs. Drain Current V(BR)DSS tp I AS Fig 12b. Unclamped Inductive Waveforms 6 2015-10-29 AUIRLL014N Fig 13. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs 7 2015-10-29 AUIRLL014N SOT-223 (TO-261AA) Package Outline (Dimensions are shown in millimeters (inches) SOT-223(TO-261AA) Part Marking Information Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2015-10-29 AUIRLL014N SOT-223(TO-261AA) Tape and Reel (Dimensions are shown in millimeters (inches) 2.05 (.080) 1.95 (.077) TR 4.10 (.161) 3.90 (.154) 0.35 (.013) 0.25 (.010) 1.85 (.072) 1.65 (.065) 7.55 (.297) 7.45 (.294) 16.30 (.641) 15.70 (.619) 7.60 (.299) 7.40 (.292) 1.60 (.062) 1.50 (.059) TYP. FEED DIRECTION 12.10 (.475) 11.90 (.469) 2.30 (.090) 2.10 (.083) 7.10 (.279) 6.90 (.272) NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. 13.20 (.519) 12.80 (.504) 15.40 (.607) 11.90 (.469) 4 330.00 (13.000) MAX. NOTES : 1. OUTLINE COMFORMS TO EIA-418-1. 2. CONTROLLING DIMENSION: MILLIMETER.. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 50.00 (1.969) MIN. 18.40 (.724) MAX. 14.40 (.566) 12.40 (.488) 4 3 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-10-29 AUIRLL014N Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. SOT-223 MSL1 Class M1A (+/- 50V) AEC-Q101-002 Class H0 (+/- 250V) AEC-Q101-001 Class C5 (+/- 1125V) AEC-Q101-005 Yes Highest passing voltage. Revision History Date 3/25/2014 10/29/2015 Comments Added "Logic Level Gate Drive" bullet in the features section on page 1 Updated part marking on page 8 Updated data sheet with new IR corporate template Updated datasheet with corporate template Corrected ordering table on page 1. Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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