TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D – JUNE 1996 – REVISED APRIL 2001
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D
Output Swing Includes Both Supply Rails
D
Low Noise . . . 15 nV/√Hz Typ at f = 1 kHz
D
Low Input Bias Current ...1 pA Typ
D
Fully Specified for Single-Supply 3-V and
5-V Operation
D
Common-Mode Input Voltage Range
Includes Negative Rail
D
High Gain Bandwidth ...2 MHz at
VDD = 5 V With 600-Ω Load
D
High Slew Rate . . . 1.6 V/µs at VDD = 5 V
D
Wide Supply Voltage Range
2.7 V to 10 V
D
Macromodel Included
description
The TLV2231 is a single low-voltage operational amplifier available in the SOT -23 package. It of fers 2 MHz of
bandwidth and 1.6 V/µs of slew rate for applications requiring good ac performance. The device exhibits
rail-to-rail output performance for increased dynamic range in single or split supply applications. The TLV2231
is fully characterized at 3 V and 5 V and is optimized for low-voltage applications.
The TLV2231, exhibiting high input impedance and low noise, is excellent for small-signal conditioning of
high-impedance sources, such as piezoelectric transducers. Because of the micropower dissipation levels
combined with 3-V operation, these devices work well in hand-held monitoring and remote-sensing
applications. In addition, the rail-to-rail output feature with single- or split-supplies makes this family a great
choice when interfacing with analog-to-digital converters (ADCs). The device can also drive 600-Ω loads for
telecom applications.
With a total area of 5.6mm2, the SOT -23 package only requires one-third the board space of the standard 8-pin
SOIC package. This ultra-small package allows designers to place single amplifiers very close to the signal
source, minimizing noise pick-up from long PCB traces. TI has also taken special care to provide a pinout that
is optimized for board layout (see Figure 1). Both inputs are separated by GND to prevent coupling or leakage
paths. The OUT and IN– terminals are on the same end of the board for providing negative feedback. Finally,
gain setting resistors and the decoupling capacitor are easily placed around the package.
VIVDD+
OUTIN–
VDD/GND
IN+ C
RI
RF
GND
V+
VO
1
2
3
4
5
Figure 1. Typical Surface Mount Layout for a Fixed-Gain Noninverting Amplifier
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
DBV PACKAGE
(TOP VIEW)
5
43
1
2
IN–
VDD–/GND
IN+ VDD+
OUT
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright 2001, Texas Instruments Incorporated
Advanced LinCMOS is a trademark of Texas Instruments.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D – JUNE 1996 – REVISED APRIL 2001
2POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
AVAILABLE OPTIONS
TA
VIOmax AT 25°C
PACKAGED DEVICES
SYMBOL
CHIP
FORM‡
T
A
V
IO
max
AT
25°C
SOT-23 (DBV)†
SYMBOL
FORM‡
(Y)
0°C to 70°C3 mV TLV2231CDBV VAEC
TLV2231Y
–40°C to 85°C3 mV TLV2231IDBV VAEI
TLV2231Y
†The DBV package available in tape and reel only.
‡Chip forms are tested at TA = 25°C only.
TLV2231Y chip information
This chip, when properly assembled, displays characteristics similar to the TLV2231C. Thermal compression
or ultrasonic bonding may be used on the doped-aluminum bonding pads. This chip may be mounted with
conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 10 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
TJmax = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
PIN (2) IS INTERNALLY CONNECTED
TO BACKSIDE OF CHIP.
+
–OUT
IN+
IN–
VDD+
(5)
(1)
(3) (4)
(2)
VDD–/GND
40
(3)
(2)
(1) (5)
(4)
32
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D – JUNE 1996 – REVISED APRIL 2001
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
equivalent schematic
Q3 Q6 Q9 Q12 Q14 Q16
Q2 Q5 Q7 Q8 Q10 Q11
D1
Q17Q15Q13
Q4Q1
R5
C1
VDD+
IN+
IN–
R3
R7
R1
R2
OUT
VDD–/GND
COMPONENT COUNT†
Transistors
Diodes
Resistors
Capacitors
23
5
11
2
†Includes both amplifiers and all
ESD, bias, and trim circuitry
R6
C2
R4
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D – JUNE 1996 – REVISED APRIL 2001
4POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage, VDD (see Note 1) 12 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential input voltage, VID (see Note 2) ±VDD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, VI (any input, see Note 1) –0.3 V to VDD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input current, II (each input) ±5 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current, IO ±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total current into VDD+ ±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total current out of VDD– ±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of short-circuit current (at or below) 25°C (see Note 3) unlimited. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, TA: TLV2231C 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TLV2231I –40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, Tstg –65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: DBV package 260°C. . . . . . . . . . . . . . . . . .
†Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only , and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may af fect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to VDD –.
2. Differential voltages are at the noninverting input with respect to the inverting input. Excessive current flows when input is brought
below VDD– – 0.3 V.
3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded.
DISSIPATION RATING TABLE
PACKAGE
T
A
≤ 25°CDERATING F ACTOR T
A
= 70°C T
A
= 85°C
PACKAGE
A
POWER RATING ABOVE TA = 25°C
A
POWER RATING
A
POWER RATING
DBV 150 mW 1.2 mW/°C96 mW 78 mW
recommended operating conditions
TLV2231C TLV2231I
UNIT
MIN MAX MIN MAX
UNIT
Supply voltage, VDD
(see Note 1)
2.7 10 2.7 10 V
Input voltage range, VIVDD–VDD+ –1.3 VDD–VDD+ –1.3 V
Common-mode input voltage, VIC VDD–VDD+ –1.3 VDD–VDD+ –1.3 V
Operating free-air temperature, TA0 70 –40 85 °C
NOTE 1: All voltage values, except differential voltages, are with respect to VDD –.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D – JUNE 1996 – REVISED APRIL 2001
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 3 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TLV2231C TLV2231I
UNIT
PARAMETER
TEST
CONDITIONS
A
MIN TYP MAX MIN TYP MAX
UNIT
VIO Input offset voltage
V V
V
0.75 3 0.75 3 mV
αVIO
Temperature
coefficient of in
p
ut
V V
V
Full range
05
05
µV/°C
αVIO coe
ffi
c
i
en
t
o
f
i
npu
t
offset voltage
V V
V
0
.
5
0
.
5
µ
V/°C
Input offset voltage
long-term drift
(see Note 4)
V
DD± = ±1.5
V
,
VO = 0,
V
IC = 0,
RS = 50 Ω25°C0.003 0.003 µV/mo
IIO
In
p
ut offset current
25°C 0.5 60 0.5 60 p
A
I
IO
Input
offset
current
Full range 150 150
pA
IIB
In
p
ut bias current
25°C 1 60 1 60 p
A
I
IB
Input
bias
current
Full range 150 150
pA
0–0.3 0 –0.3
25°C
0
to
0.3
to
0
to
0.3
to
VICR
Common-mode input
RS=50Ω
|VIO|≤5mV
2 2.2 2 2.2
V
V
ICR voltage range
R
S =
50
Ω
,
|V
IO
|
≤5
mV
0 0
V
Full range
0
to
0
to
1.7 1.7
Hi h l l t t
IOH = –1 mA 25°C 2.87 2.87
VOH High-level output
voltage
IOH =2mA
25°C 2.74 2.74 V
voltage
I
OH = –
2
mA
Full range 2 2
Llltt
VIC = 1.5 V, IOL = 50 µA 25°C 10 10
VOL Low-level output
voltage
VIC =15V
IOL = 500 µA
25°C 100 100 mV
voltage
V
IC =
1
.
5
V
,
I
OL =
500
µ
A
Full range 300 300
Large
-
signal
V15V
R 600 Ω‡
25°C 1 1.6 1 1.6
AVD
Large signal
differential voltage VIC = 1.5 V,
VO=1Vto2V
R
L =
600
Ω‡
Full range 0.3 0.3 V/mV
VD
amplification
VO
=
1
V
to
2
V
RL = 1 MΩ‡25°C 250 250
rid Differential input
resistance 25°C 1012 1012 Ω
ric Common-mode input
resistance 25°C 1012 1012 Ω
cic Common-mode input
capacitance f = 10 kHz 25°C 6 6 pF
zoClosed-loop output
impedance f = 1 MHz, AV = 1 25°C 156 156 Ω
CMRR
Common-mode V
IC
= 0 to 1.7 V, 25°C 60 70 60 70
dB
CMRR
rejection ratio
IC ,
VO = 1.5 V, RS = 50 ΩFull range 55 55
dB
kSVR
Supply voltage
rejection ratio
V
DD
= 2.7 V to 8 V, 25°C 70 96 70 96
dB
k
SVR re
j
ec
ti
on ra
ti
o
(∆VDD /∆VIO)
DD ,
VIC = VDD/2, No load Full range 70 70
dB
IDD
Su
pp
ly current
VO=15V
No load
25°C 750 1200 750 1200
µA
I
DD
Supply
current
V
O =
1
.
5
V
,
No
load
Full range 1500 1500 µ
A
†Full range for the TLV2231C is 0°C to 70°C. Full range for the TLV2231I is – 40°C to 85°C.
‡Referenced to 1.5 V
NOTE 4: T ypical values are based on the input of fset voltage shift observed through 500 hours of operating life test at T A = 150°C extrapolated
to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D – JUNE 1996 – REVISED APRIL 2001
6POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
operating characteristics at specified free-air temperature, VDD = 3 V
PARAMETER
TEST CONDITIONS
TA†
TLV2231C TLV2231I
UNIT
PARAMETER
TEST
CONDITIONS
T
A
†
MIN TYP MAX MIN TYP MAX
UNIT
Slew rate at unity
‡
25°C0.75 1.25 0.75 1.25
SR
Slew
rate
at
unity
gain VO = 1.1 V to 1.9 V,
CL = 100 pF‡RL = 600 Ω
‡
,Full
range 0.5 0.5 V/µs
V
Equivalent input f = 10 Hz 25°C 105 105
nV/√Hz
V
n
q
noise voltage f = 1 kHz 25°C 16 16 n
V/√H
z
VN(PP)
Peak-to-peak
equivalent in
p
ut
f = 0.1 Hz to 1 Hz 25°C 1.4 1.4
µV
V
N(PP) equ
i
va
l
en
t
i
npu
t
noise voltage f = 0.1 Hz to 10 Hz 25°C 1.5 1.5 µ
V
InEquivalent input
noise current 25°C 0.6 0.6 fA/√Hz
VO = 1 V to 2 V,
f 20 kHz
AV = 1
25°C
0.285% 0.285%
Total harmonic
f
=
20
kH
z,
RL = 600 Ω‡AV = 10
25°C
7.2% 7.2%
THD+N distortion plus
noise
VO
=
1Vto2V,
AV = 1 0.014% 0.014%
noise
VO
=
1
V
to
2
V
,
f = 20 kHz,
§
AV = 10 25°C0.098% 0.098%
RL = 600 Ω
§
AV = 100 0.13% 0.13%
Gain-bandwidth
product f = 10 kHz,
CL = 100 pF‡RL = 600 Ω‡,25°C 1.9 1.9 MHz
BOM Maximum output-
swing bandwidth VO(PP) = 1 V,
RL = 600 Ω‡,AV = 1,
CL = 100 pF‡25°C 60 60 kHz
t
Settling time
AV = –1,
Step = 1 V to 2 V, To 0.1%
25
°
C
0.9 0.9
µs
t
s
Settling
time
,
RL = 600 Ω‡,
CL = 100 pF‡To 0.01%
25°C
1.5 1.5 µ
s
φmPhase margin at
unity gain R
L
= 600 Ω
‡
, C
L
= 100 pF
‡
25°C 50°50°
Gain margin
L,
L
25°C 8 8 dB
†Full range is –40°C to 85°C.
‡Referenced to 1.5 V
§Referenced to 0 V
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D – JUNE 1996 – REVISED APRIL 2001
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TLV2231C TLV2231I
UNIT
PARAMETER
TEST
CONDITIONS
A
MIN TYP MAX MIN TYP MAX
UNIT
VIO Input offset voltage
V V
V
0.71 3 0.71 3 mV
αVIO
Temperature
coefficient of in
p
ut
V V
V
Full range
05
05
µV/°C
αVIO coe
ffi
c
i
en
t
o
f
i
npu
t
offset voltage
V V
V
0
.
5
0
.
5
µ
V/°C
Input offset voltage
long-term drift
(see Note 4)
V
DD± = ±2.5
V
,
VO = 0,
V
IC = 0,
RS = 50 Ω25°C0.003 0.003 µV/mo
IIO
In
p
ut offset current
25°C 0.5 60 0.5 60 p
A
I
IO
Input
offset
current
Full range 150 150
pA
IIB
In
p
ut bias current
25°C 1 60 1 60 p
A
I
IB
Input
bias
current
Full range 150 150
pA
0–0.3 0 –0.3
25°C
0
to
0.3
to
0
to
0.3
to
VICR
Common-mode input
RS=50Ω
|VIO|≤5mV
4 4.2 4 4.2
V
V
ICR voltage range
R
S =
50
Ω
,
|V
IO
|
≤5
mV
0 0
V
Full range
0
to
0
to
3.7 3.7
Hi h l l t t
IOH = –1 mA 25°C 4.9 4.9
VOH High-level output
voltage
IOH =4mA
25°C 4.6 4.6 V
voltage
I
OH = –
4
mA
Full range 4 4
Llltt
VIC = 2.5 V, IOL = 500 µA 25°C 80 80
VOL Low-level output
voltage
VIC =25V
IOL =1mA
25°C 160 160 mV
voltage
V
IC =
2
.
5
V
,
I
OL =
1
mA
Full range 500 500
Large
-
signal
V25V
R 600 Ω‡
25°C 1 1.5 1 1.5
AVD
Large signal
differential voltage VIC = 2.5 V,
VO=1Vto4V
R
L =
600
Ω‡
Full range 0.3 0.3 V/mV
VD
amplification
VO
=
1
V
to
4
V
RL = 1 MΩ‡25°C 400 400
rid Differential input
resistance 25°C 1012 1012 Ω
ric Common-mode input
resistance 25°C 1012 1012 Ω
cic Common-mode input
capacitance f = 10 kHz 25°C 6 6 pF
zoClosed-loop output
impedance f = 1 MHz, AV = 1 25°C 138 138 Ω
CMRR
Common-mode V
IC
= 0 to 2.7 V, 25°C 60 70 60 70
dB
CMRR
rejection ratio
IC ,
VO = 2.5 V, RS = 50 ΩFull range 55 55
dB
kSVR
Supply voltage
rejection ratio
V
DD
= 4.4 V to 8 V, 25°C 70 96 70 96
dB
k
SVR re
j
ec
ti
on ra
ti
o
(∆VDD /∆VIO)
DD ,
VIC = VDD/2, No load Full range 70 70
dB
IDD
Su
pp
ly current
VO=25V
No load
25°C 850 1300 850 1300
µA
I
DD
Supply
current
V
O =
2
.
5
V
,
No
load
Full range 1600 1600 µ
A
†Full range for the TLV2231C is 0°C to 70°C. Full range for the TLV2231I is – 40°C to 85°C.
‡Referenced to 2.5 V
NOTE 5: T ypical values are based on the input of fset voltage shift observed through 500 hours of operating life test at T A = 150°C extrapolated
to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D – JUNE 1996 – REVISED APRIL 2001
8POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER
TEST CONDITIONS
TA†
TLV2231C TLV2231I
UNIT
PARAMETER
TEST
CONDITIONS
T
A
†
MIN TYP MAX MIN TYP MAX
UNIT
Slew rate at unity
VO=15Vto35V
R 600 Ω‡
25°C1 1.6 1 1.6
SR
Slew
rate
at
unity
gain
V
O =
1
.
5
V
to
3
.
5
V
,
CL = 100 pF‡
R
L =
600
Ω‡
,Full
range 0.7 0.7 V/µs
V
Equivalent input f = 10 Hz 25°C 100 100
nV/√Hz
V
n
q
noise voltage f = 1 kHz 25°C 15 15 n
V/√H
z
VN(PP)
Peak-to-peak
equivalent in
p
ut
f = 0.1 Hz to 1 Hz 25°C 1.4 1.4
µV
V
N(PP) equ
i
va
l
en
t
i
npu
t
noise voltage f = 0.1 Hz to 10 Hz 25°C 1.5 1.5 µ
V
InEquivalent input
noise current 25°C 0.6 0.6 fA/√Hz
VO = 1.5 V to 3.5 V,
f 20 kHz
AV = 1
25°C
0.409% 0.409%
Total harmonic
f
=
20
kH
z,
RL = 600 Ω‡AV = 10
25°C
3.68% 3.68%
THD+N distortion plus
noise
VO
=
1.5 V to 3.5 V,
AV = 1 0.018% 0.018%
noise
VO
=
1
.
5
V
to
3
.
5
V
,
f = 20 kHz,
§
AV = 10 25°C0.045% 0.045%
RL = 600 Ω
§
AV = 100 0.116% 0.116%
Gain-bandwidth
product f = 10 kHz,
CL = 100 pF‡RL = 600 Ω‡,25°C 2 2 MHz
BOM Maximum
output-swing
bandwidth
VO(PP) = 1 V,
RL = 600 Ω‡,AV = 1,
CL = 100 pF‡25°C 300 300 kHz
t
Settling time
AV = –1,
Step = 1.5 V to 3.5 V, To 0.1%
25
°
C
0.95 0.95
µs
t
s
Settling
time
,
RL = 600 Ω‡,
CL = 100 pF‡To 0.01%
25°C
2.4 2.4 µ
s
φmPhase margin at
unity gain R
L
= 600 Ω
‡
, C
L
= 100 pF
‡
25°C 48°48°
Gain margin
L,
L
25°C 8 8 dB
†Full range is –40°C to 85°C.
‡Referenced to 2.5 V
§Referenced to 0 V
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D – JUNE 1996 – REVISED APRIL 2001
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at VDD = 3 V, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TLV2231Y
UNIT
PARAMETER
TEST
CONDITIONS
MIN TYP MAX
UNIT
VIO Input offset voltage
V± ±15V
V0
V0
750 µV
IIO Input offset current VDD± = ±1.5 V,
RS=50Ω
VIC = 0, VO = 0, 0.5 pA
IIB Input bias current
RS
=
50
Ω
1 pA
–0.3
VICR Common-mode input voltage range |VIO| ≤5 mV, RS = 50 Ωto V
ICR
gg
IO
S
2.2
VOH High-level output voltage IOH = –1 mA 2.87 V
VOL
Low level out
p
ut voltage
VIC = 1.5 V, IOL = 50 µA 10
mV
V
OL
Low
-
level
output
voltage
VIC = 1.5 V, IOL = 500 µA 100
mV
AVD
Lar
g
e-si
g
nal differential volta
g
e
VO=1Vto2V
RL = 600 Ω†1.6
V/mV
A
VD
gg g
amplification
V
O =
1
V
to
2
V
RL = 1 Mن250
V/mV
rid Differential input resistance 1012 Ω
ric Common-mode input resistance 1012 Ω
cic Common-mode input capacitance f = 10 kHz 6 pF
zoClosed-loop output impedance f = 1 MHz, AV = 1 156 Ω
CMRR Common-mode rejection ratio VIC = 0 to 1.7 V, VO = 0, RS = 50 Ω60 70 dB
kSVR
Suppl
y
volta
g
e rejection ratio
VDD =27Vto8V
VIC =0
No load
96
dB
k
SVR
ygj
(∆VDD/∆VIO)
V
DD =
2
.
7
V
to
8
V
,
V
IC =
0
,
No
load
96
dB
IDD Supply current VO = 0, No load 750 µA
†Referenced to 1.5 V
electrical characteristics at VDD = 5 V, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TLV2231Y
UNIT
PARAMETER
TEST
CONDITIONS
MIN TYP MAX
UNIT
VIO Input offset voltage
V± ±15V
V0
V0
710 µV
IIO Input offset current VDD± = ±1.5 V,
RS=50Ω
VIC = 0, VO = 0, 0.5 pA
IIB Input bias current
RS
=
50
Ω
1 pA
–0.3
VICR Common-mode input voltage range |VIO| ≤5 mV, RS = 50 Ωto V
ICR
gg
IO
S
4.2
VOH High-level output voltage IOH = –1 mA 4.9 V
VOL
Low level out
p
ut voltage
VIC = 2.5 V, IOL = 500 µA 80
mV
V
OL
Low
-
level
output
voltage
VIC = 2.5 V, IOL = 1 mA 160
mV
AVD
Lar
g
e-si
g
nal differential volta
g
e
VO=1Vto2V
RL = 600 Ω†15
V/mV
A
VD
gg g
amplification
V
O =
1
V
to
2
V
RL = 1 Mن400
V/mV
rid Differential input resistance 1012 Ω
ric Common-mode input resistance 1012 Ω
cic Common-mode input capacitance f = 10 kHz 6 pF
zoClosed-loop output impedance f = 1 MHz, AV = 1 138 Ω
CMRR Common-mode rejection ratio VIC = 0 to 1.7 V, VO = 0, RS = 50 Ω60 70 dB
kSVR
Suppl
y
volta
g
e rejection ratio
VDD =27Vto8V
VIC =0
No load
96
dB
k
SVR
ygj
(∆VDD/∆VIO)
V
DD =
2
.
7
V
to
8
V
,
V
IC =
0
,
No
load
96
dB
IDD Supply current VO = 0, No load 850 µA
†Referenced to 2.5 V
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D – JUNE 1996 – REVISED APRIL 2001
10 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
VIO
In
p
ut offset voltage
Distribution 2, 3
V
IO
Input
offset
voltage
vs Common-mode input voltage
,
4, 5
αVIO Input offset voltage temperature coef ficient Distribution 6, 7
IIB/IIO Input bias and input offset currents vs Free-air temperature 8
VI
In
p
ut voltage
vs Suppl
y
volta
g
e 9
V
I
Input
voltage
yg
vs Free-air temperature 10
VOH High-level output voltage vs High-level output current 11, 14
VOL Low-level output voltage vs Low-level output current 12, 13, 15
VO(PP) Maximum peak-to-peak output voltage vs Frequency 16
IOS
Short circuit out
p
ut current
vs Suppl
y
volta
g
e 17
I
OS
Short
-
circuit
output
current
yg
vs Free-air temperature 18
VOOutput voltage vs Differential input voltage 19, 20
AVD Differential voltage amplification vs Load resistance 21
AVD
Large signal differential voltage am
p
lification
vs Frequency 22, 23
A
VD
Large
-
signal
differential
voltage
amplification
qy
vs Free-air temperature
,
24, 25
zoOutput impedance vs Frequency 26, 27
CMRR
Common mode rejection ratio
vs Frequenc
y
28
CMRR
Common
-
mode
rejection
ratio
qy
vs Free-air temperature 29
kSVR
Su
pp
ly voltage rejection ratio
vs Frequenc
y
30, 31
k
SVR
Supply
-
voltage
rejection
ratio
qy
vs Free-air temperature
,
32
IDD Supply current vs Supply voltage 33
SR
Slew rate
vs Load capacitance 34
SR
Slew
rate
vs Free-air temperature 35
VOInverting large-signal pulse response vs Time 36, 37
VOVoltage-follower large-signal pulse response vs Time 38, 39
VOInverting small-signal pulse response vs Time 40, 41
VOVoltage-follower small-signal pulse response vs Time 42, 43
VnEquivalent input noise voltage vs Frequency 44, 45
Noise voltage (referred to input) Over a 10-second period 46
THD + N Total harmonic distortion plus noise vs Frequency 47
Gain bandwidth
p
roduct
vs Free-air temperature 48
Gain
-
bandwidth
product
vs Supply voltage 49
Gain margin vs Load capacitance 50, 51
φ
Phase margin
vs Frequency 22, 23
φ
m
Phase
margin
qy
vs Load capacitance
,
52, 53
B1Unity-gain bandwidth vs Load capacitance 54, 55
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D – JUNE 1996 – REVISED APRIL 2001
11
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 2
Precentage of Amplifiers – %
DISTRIBUTION OF TLV2231
INPUT OFFSET VOLTAGE
VIO – Input Offset Voltage – mV
10
6
2
0
12
16
20
18
14
8
4
–3–2–10 1 2 3
380 Amplifiers From 1 W afer Lot
VDD = ±1.5 V
TA = 25°C
Figure 3
Precentage of Amplifiers – %
DISTRIBUTION OF TLV2231
INPUT OFFSET VOLTAGE
VIO – Input Offset Voltage – mV
10
6
2
0
12
16
20
18
14
8
4
–3–2–10 1 2 3
380 Amplifiers From 1 W afer
Lot
VDD = ±2.5 V
TA = 25°C
Figure 4
– Input Offset Voltage – mV
INPUT OFFSET VOLTAGE†
vs
COMMON-MODE INPUT VOLTAGE
ÁÁ
ÁÁ
VIO
VIC – Common-Mode Input Voltage – V
1
0.8
0.6
0.4
0.2
0
–0.2
–0.4
–0.6
–0.8
–1–1012
VDD = 3 V
RS = 50 Ω
TA = 25°C
3
Figure 5
– Input Offset Voltage – mV
INPUT OFFSET VOLTAGE
†
vs
COMMON-MODE INPUT VOLTAGE
ÁÁ
ÁÁ
ÁÁ
VIO
VIC – Common-Mode Input Voltage – V
1
0.8
0.6
0.4
0.2
0
–0.2
–0.4
–0.6
–0.8
–1
–1012345
VDD = 5 V
RS = 50 Ω
TA = 25°C
†For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D – JUNE 1996 – REVISED APRIL 2001
12 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 6
DISTRIBUTION OF TLV2231 INPUT OFFSET
VOLTAGE TEMPERATURE COEFFICIENT†
Percentage of Amplifiers – %
αVIO – Input Offset Voltage
Temperature Coefficient – µV/°C
15
10
5
0
20
25
30
–4–3–2–101234
32 Amplifiers From
1 W afer Lots
VDD± = ±1.5 V
P Package
TA = 25°C to 125°C
Figure 7
DISTRIBUTION OF TLV2231 INPUT OFFSET
VOLTAGE TEMPERATURE COEFFICIENT†
Percentage of Amplifiers – %
αVIO – Input Offset Voltage
Temperature Coefficient – µV/°C
15
10
5
0
20
25
30
–4–3–2–101234
32 Amplifiers From
1 W afer Lots
VDD± = ±2.5 V
P Package
TA = 25°C to 125°C
Figure 8
IIB and IIO – Input Bias and Input Offset Currents – pA
INPUT BIAS AND INPUT OFFSET CURRENTS†
vs
FREE-AIR TEMPERATURE
IIB IIO
TA – Free-Air Temperature – °C
100
90
80
70
60
50
40
30
20
10
025 45 65 85 105 125
VDD± = ±2.5 V
VIC = 0
VO = 0
RS = 50 Ω
IIB IIO
Figure 9
0
4
1 1.5 2 2.5
– Input Voltage – V
2
1
3
INPUT VOLTAGE
vs
SUPPLY VOLTAGE
5
3 3.5 4
–1
–2
–3
–4
–5
RS = 50 Ω
TA = 25°C
|VIO| ≤5 mV
ÁÁ
ÁÁ
VI
|VDD±| – Supply Voltage – V
†Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D – JUNE 1996 – REVISED APRIL 2001
13
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 10
– Input Voltage – V
INPUT VOLTAGE†
vs
FREE-AIR TEMPERATURE
ÁÁ
VI
TA – Free-Air Temperature – °C
2
1
0
3
4
5
–1
–55 –35 –15 5 25 45 65 85
|VIO| ≤5 mV
VDD = 5 V
105 125
Figure 11
– High-Level Output Voltage – V
HIGH-LEVEL OUTPUT VOLTAGE†‡
vs
HIGH-LEVEL OUTPUT CURRENT
ÁÁ
ÁÁ
VOH
|IOH| – High-Level Output Current – mA
2
1.5
1
00
2.5
3VDD = 3 V
TA = –40°C
TA = 25°C
TA = 85°C
0.5
TA = 125°C
51015
Figure 12
0.6
0.4
0.2
00123
– Low-Level Output Voltage – V
0.8
1
LOW-LEVEL OUTPUT VOLTAGE‡
vs
LOW-LEVEL OUTPUT CURRENT
1.2
45
ÁÁ
ÁÁ
VOL
IOL – Low-Level Output Current – mA
VDD = 3 V
TA = 25°C
VIC = 0
VIC = 0.75 V
VIC = 1.5 V
Figure 13
– Low-Level Output Voltage – V
LOW-LEVEL OUTPUT VOLTAGE†‡
vs
LOW-LEVEL OUTPUT CURRENT
ÁÁ
ÁÁ
ÁÁ
VOL
IOL – Low-Level Output Current – mA
0.4
0.2
1.2
00123
0.8
0.6
1
1.4
45
TA = 85°C
TA = 25°C
TA = 125°C
VDD = 3 V
VIC = 1.5 V
TA = –40°C
†Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
‡For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D – JUNE 1996 – REVISED APRIL 2001
14 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 14
– High-Level Output Voltage – V
HIGH-LEVEL OUTPUT VOLTAGE†‡
vs
HIGH-LEVEL OUTPUT CURRENT
ÁÁ
ÁÁ
VOH
|IOH| – High-Level Output Current – mA
0
VDD = 5 V
TA = –40°C
TA = 25°C
TA = 85°C
TA = 125°C
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
051015202530
Figure 15
– Low-Level Output Voltage – V
LOW-LEVEL OUTPUT VOLTAGE†‡
vs
LOW-LEVEL OUTPUT CURRENT
ÁÁ
ÁÁ
VOL
IOL – Low-Level Output Current – mA
0.6
0.4
0.2
001 2 3
1
1.2
1.4
456
0.8
VDD = 5 V
VIC = 2.5 V
TA = –40°C
TA = 85°C
TA = 25°C
TA = 125°C
Figure 16
– Maximum Peak-to-Peak Output Voltage – V
f – Frequency – Hz
MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE‡
vs
FREQUENCY
ÁÁ
ÁÁ
ÁÁ
VO(PP)
4
2
1
5
3
0102103104106
105
RI = 600 Ω
TA = 25°C
VDD = 5 V
VDD = 3 V
Figure 17
– Short-Circuit Output Current – mA
SHORT-CIRCUIT OUTPUT CURRENT
vs
SUPPLY VOLTAGE
IOS
VDD – Supply Voltage – V
30
25
20
15
10
5
0
–5
–10
–15
–20
–25
–30 2345678
VID = –100 mV
VID = 100 mV
VO = VDD/2
VIC = VDD/2
TA = 25°C
†Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
‡For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D – JUNE 1996 – REVISED APRIL 2001
15
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 18
– Short-Circuit Output Current – mA
SHORT-CIRCUIT OUTPUT CURRENT†‡
vs
FREE-AIR TEMPERATURE
IOS
TA – Free-Air Temperature – °C
–75
30 VDD = 5 V
VIC = 2.5 V
VO = 2.5 V
VID = –100 mV
VID = 100 mV
25
20
15
5
0
–5
–10
–15
–20
–25
10
–30 –50 –25 0 25 50 75 100 125
Figure 19
OUTPUT VOLTAGE‡
vs
DIFFERENTIAL INPUT VOLTAGE
VID – Differential Input Voltage – mV
010
VDD = 3 V
VIC = 1.5 V
RI = 600 Ω
TA = 25°C
86420–2–4–6–8–10
0.5
1
1.5
2
2.5
3
– Output Voltage – V
VO
Figure 20
OUTPUT VOLTAGE‡
vs
DIFFERENTIAL INPUT VOLTAGE
VID – Differential Input Voltage – mV
– Output Voltage – V
VO
010
86420–2–4–6–8–10
1
2
3
4
5
VDD = 5 V
VIC = 2.5 V
RL = 600 Ω
TA = 25°C
Figure 21
DIFFERENTIAL VOLTAGE AMPLIFICATION‡
vs
LOAD RESISTANCE
RL – Load Resistance – kΩ
– Differential Voltage Amplification – V/mV
ÁÁ
ÁÁ
ÁÁ
AVD
VO(PP) = 2 V
TA = 25°C
VDD = 5 V
VDD = 3 V
0.1 101102103
102
101
1
103
104
1
†Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
‡For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D – JUNE 1996 – REVISED APRIL 2001
16 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
om – Phase Margin
φm
f – Frequency – Hz
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE MARGIN†
vs
FREQUENCY
AVD – Large-Signal Differential
ÁÁ
ÁÁ
AVD
V oltage Amplification – dB
20
80
60
40
0
–20
–40
104105106107
180°
135°
90°
45°
0°
–45°
–90°
Gain
VDD = 3 V
RL = 600 Ω
CL= 100 pF
TA = 25°C
Phase Margin
Figure 22
om – Phase Margin
φm
f – Frequency – Hz
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE MARGIN†
vs
FREQUENCY
AVD – Large-Signal Differential
ÁÁ
ÁÁ
AVD
V oltage Amplification – dB
20
80
60
40
0
–20
–40
104105106107
180°
135°
90°
45°
0°
–45°
–90°
VDD = 5 V
RL= 600 Ω
CL= 100 pF
TA = 25°C
Phase Margin
Gain
Figure 23
†For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D – JUNE 1996 – REVISED APRIL 2001
17
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 24
LARGE-SIGNAL DIFFERENTIAL
VOLTAGE AMPLIFICATION†‡
vs
FREE-AIR TEMPERATURE
TA – Free-Air Temperature – °C
– Large-Signal Differential Voltage
AVD Amplification – V/mV
–50 –25 0 25 50 75 100
RL = 600 Ω
103
102
0.1
VDD = 3 V
VIC = 1.5 V
VO = 0.5 V to 2.5 V
–75 125
101
1
RL = 1 MΩ
Figure 25
LARGE-SIGNAL DIFFERENTIAL
VOLTAGE AMPLIFICATION†‡
vs
FREE-AIR TEMPERATURE
TA – Free-Air Temperature – °C
– Large-Signal Differential Voltage AVD Amplification – V/mV
–50 –25 0 25 50 75 100 125
103
102
0.1
–75
VDD = 5 V
VIC = 2.5 V
VO = 1 V to 4 V
RL = 1 MΩ
RL = 600 Ω
101
1
Figure 26
– Output Impedance –
f– Frequency – Hz
OUTPUT IMPEDANCE‡
vs
FREQUENCY
Ω
zo
10
1
0.1
1000
100
102103104105106
AV = 100
AV = 10
AV = 1
VDD = 3 V
TA = 25°C
Figure 27
– Output Impedance –
f– Frequency – Hz
OUTPUT IMPEDANCE‡
vs
FREQUENCY
Ω
zo
10
1
0.1
1000
100
102103104105106
AV = 100
AV = 10
AV = 1
VDD = 5 V
TA = 25°C
†Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
‡For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D – JUNE 1996 – REVISED APRIL 2001
18 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 28
CMRR – Common-Mode Rejection Ratio – dB
f – Frequency – Hz
COMMON-MODE REJECTION RATIO†
vs
FREQUENCY
80
40
20
0
100
60
102103104105106
VDD = 3 V
VIC = 1.5 V
107
VDD = 5 V
VIC = 2.5 V
TA = 25°C
Figure 29
CMMR – Common-Mode Rejection Ratio – dB
COMMON-MODE REJECTION RATIO†‡
vs
FREE-AIR TEMPERATURE
TA – Free-Air Temperature – °C
76
72
70
82
74
80
78
84
– 50 – 25 0 25 50 75 100– 75 125
VDD = 5 V
VDD = 3 V
Figure 30
– Supply-Voltage Rejection Ratio – dB
f – Frequency – Hz
SUPPLY-VOLTAGE REJECTION RATIO†
vs
FREQUENCY
Á
Á
Á
kSVR
60
40
20
100
80
0
102103104105106107
VDD = 3 V
TA = 25°C
kSVR+
kSVR–
Figure 31
– Supply-Voltage Rejection Ratio – dB
f – Frequency – Hz
SUPPLY-VOLTAGE REJECTION RATIO†
vs
FREQUENCY
ÁÁ
ÁÁ
ÁÁ
kSVR
100
80
60
40
20
0
102103104105106
kSVR–
107
VDD = 5 V
TA = 25°C
kSVR+
‡Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
†For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D – JUNE 1996 – REVISED APRIL 2001
19
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 32
– Supply-Voltage Rejection Ratio – dB
SUPPLY-VOLTAGE REJECTION RATIO†
vs
FREE-AIR TEMPERATURE
ÁÁ
ÁÁ
ÁÁ
kSVR
TA – Free-Air Temperature – °C
100
98
96
94
92
90 –50 –25 0 25 50 75 100 125–75
VDD = 2.7 V to 8 V
VIC = VO = VDD /2
Figure 33
– Supply Current – Aµ
ÁÁ
ÁÁ
ÁÁ
IDD
VDD – Supply Voltage – V
SUPPLY CURRENT†
vs
SUPPLY VOLTAGE
TA = 25°C
TA = 85°C
VO = 0
No Load
1000
750
500
250
0012345678
TA = –40°C
Figure 34
SR – Slew Rate –
SLEW RATE‡
vs
LOAD CAPACITANCE
CL – Load Capacitance – pF
sµ
V/
101102103104105
VDD = 5 V
AV = –1
TA = 25°C
SR–
SR+
3.5
3
2.5
2
1.5
1
0.5
0
Figure 35
SR – Slew Rate –
SLEW RATE†‡
vs
FREE-AIR TEMPERATURE
sµ
V/
TA – Free-Air Temperature – °C
–50 –25 0 25 50 75 100–75 125
4
3
2
1
0
SR–
SR+
VDD = 5 V
RL = 600 Ω
CL = 100 pF
AV = 1
†Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
‡For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D – JUNE 1996 – REVISED APRIL 2001
20 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 36
– Output Voltage – V
INVERTING LARGE-SIGNAL PULSE
RESPONSE†
VO
t – Time – µs
1.5
1
0.5
00
2
2.5
3
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
AV = –1
TA = 25°C
VDD = 3 V
RL = 600 Ω
CL = 100 pF
Figure 37
INVERTING LARGE-SIGNAL PULSE
RESPONSE†
t – Time – µs
– Output Voltage – V
VO
5
0
4
3
2
1
00.5 1 1.5 2 2.5 3 3.5 4 4.5 5
AV = –1
TA = 25°C
VDD = 5 V
RL = 600 Ω
CL = 100 pF
Figure 38
VOLTAGE-FOLLOWER LARGE-SIGNAL
PULSE RESPONSE†
– Output Voltage – V
VO
t – Time – µs
1.5
1
0.5
00123456
2
2.5
3
78910
AV = 1
TA = 25°C
VDD = 3 V
RL = 600 Ω
CL = 100 pF
Figure 39
VOLTAGE-FOLLOWER LARGE-SIGNAL
PULSE RESPONSE†
– Output Voltage – V
VO
t – Time – µs
2
1
001 2345 6
3
4
5
78910
VDD = 5 V
RL = 600 Ω
CL = 100 pF
AV = 1
TA = 25°C
†For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D – JUNE 1996 – REVISED APRIL 2001
21
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 40
INVERTING SMALL-SIGNAL
PULSE RESPONSE†
– Output Voltage – V
VO
t – Time – µs
0
1.56
1.54
1.52
1.5
1.48
1.46 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
VDD = 3 V
RL = 600 Ω
CL = 100 pF
AV = –1
TA = 25°C
Figure 41
VO – Output Voltage – V
INVERTING SMALL-SIGNAL
PULSE RESPONSE†
VO
t – Time – µs
2.5
2.48
2.460
2.52
2.54
2.56
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
VDD = 5 V
RL = 600 Ω
CL = 100 pF
AV = –1
TA = 25°C
Figure 42
VOLTAGE-FOLLOWER SMALL-SIGNAL
PULSE RESPONSE†
VO – Output Voltage – V
VO
t – Time – µs
0
1.56
1.54
1.52
1.5
1.481.48
1.48 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.50
VDD = 3 V
RL = 600 Ω
CL = 100 pF
AV = 1
TA = 25°C
Figure 43
VOLTAGE-FOLLOWER SMALL-SIGNAL
PULSE RESPONSE†
VO – Output Voltage – V
VO
t – Time – µs
0
2.56
2.54
2.52
2.5
2.48
2.46 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5
VDD = 5 V
RL = 600 Ω
CL = 100 pF
AV = 1
TA = 25°C
†For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D – JUNE 1996 – REVISED APRIL 2001
22 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 44
– Equivalent Input Noise Voltage –
f – Frequency – Hz
EQUIVALENT INPUT NOISE VOLTAGE†
vs
FREQUENCY
VnnV/ Hz
80
60
40
0
120
100
20
101102103104
VDD = 3 V
RS = 20 Ω
TA = 25°C
Figure 45
– Equivalent Input Noise Voltage –
f – Frequency – Hz
EQUIVALENT INPUT NOISE VOLTAGE†
vs
FREQUENCY
VnnV/ Hz
80
40
20
0
120
60
100
101102103104
VDD = 5 V
RS = 20 Ω
TA = 25°C
Figure 46
Noise Voltage – nV
t – Time – s
INPUT NOISE VOLTAGE OVER
A 10-SECOND PERIOD†
0246
0
750
1000
810
500
–250
–500
–750
–1000
250
VDD = 5 V
f = 0.1 Hz to 10 Hz
TA = 25°C
Figure 47
THD + N – Total Harmonic Distortion Plus Noise – %
f – Frequency – Hz
TOTAL HARMONIC DISTORTION PLUS NOISE
†
vs
FREQUENCY
0.1
10
0.01
101102103104105
1
AV = 100
AV = 10
AV = 1
AV = 100
AV = 10
AV = 1
VDD = 5 V
TA = 25°C
RL = 600 Ω to 2.5 V
RL = 600 Ω to 0 V
†For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D – JUNE 1996 – REVISED APRIL 2001
23
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 48
Gain-Bandwidth Product – kHz
GAIN-BANDWIDTH PRODUCT†‡
vs
FREE-AIR TEMPERATURE
TA – Free-Air Temperature – °C
4
–50 –25 0 25 50 10075 125–75
3.5
3
2.5
2
1.5
1
VDD = 5 V
f = 10 kHz
RL = 600 Ω
CL = 100 pF
Figure 49
Gain-Bandwidth Product – kHz
GAIN-BANDWIDTH PRODUCT‡
vs
SUPPLY VOLTAGE
VDD – Supply Voltage – V
0235
2.5
78146
2.25
2
1.75
1.5
RL = 600 Ω
CL = 100 pF
TA = 25°C
Figure 50
Gain Margin – dB
GAIN MARGIN‡
vs
LOAD CAPACITANCE
CL – Load Capacitance – pF
20
10
5
0
15
101102103105
104
Rnull = 0
Rnull = 50 Ω
Rnull = 100 Ω
Rnull = 500 Ω
Rnull = 1000 Ω
TA = 25°
RL = ∞
Figure 51
Gain Margin – dB
GAIN MARGIN‡
vs
LOAD CAPACITANCE
CL – Load Capacitance – pF
20
101102103105
104
Rnull = 50 Ω
Rnull = 100 Ω
TA = 25°
RL = 600 Ω
Rnull = 0
Rnull = 500 Ω
15
10
5
0
†Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
‡For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D – JUNE 1996 – REVISED APRIL 2001
24 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 52
om – Phase Margin
PHASE MARGIN†
vs
LOAD CAPACITANCE
CL – Load Capacitance – pF
m
φ
101102103105
75°
60°
45°
30°
15°
0°
Rnull = 50 Ω
Rnull = 100 Ω
Rnull = 500 Ω
Rnull = 1000 Ω
TA = 25°C
RL = ∞
104
Rnull = 0
Figure 53
Rnull = 50 Ω
Rnull = 100 Ω
Rnull = 0 Ω
Rnull = 500 Ω
TA = 25°C
RL = 600 Ω
PHASE MARGIN†
vs
LOAD CAPACITANCE
CL – Load Capacitance – pF
101102103104105
75°
60°
45°
30°
15°
0°
om – Phase Margin
m
φ
Figure 54
TA = 25°C
RL = ∞
– Unity-Gain Bandwidth – kHz
UNITY-GAIN BANDWIDTH†
vs
LOAD CAPACITANCE
ÁÁ
ÁÁ
B1
10
105
103104
CL – Load Capacitance – pF
1
0.1
102
Figure 55
TA = 25°C
RL = 600 Ω
– Unity-Gain Bandwidth – kHz
UNITY-GAIN BANDWIDTH†
vs
LOAD CAPACITANCE
ÁÁ
ÁÁ
B1
10
105
103104
CL – Load Capacitance – pF
1
0.1
102
†For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D – JUNE 1996 – REVISED APRIL 2001
25
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
driving large capacitive loads
The TLV2231 is designed to drive larger capacitive loads than most CMOS operational amplifiers. Figure 50
through Figure 55 illustrate its ability to drive loads greater than 100 pF while maintaining good gain and phase
margins (Rnull = 0).
A small series resistor (Rnull) at the output of the device (see Figure 56) improves the gain and phase margins
when driving large capacitive loads. Figure 50 through Figure 53 show the effects of adding series resistances
of 50 Ω, 100 Ω, 500 Ω, and 1000 Ω. The addition of this series resistor has two effects: the first effect is that
it adds a zero to the transfer function and the second effect is that it reduces the frequency of the pole associated
with the output load in the transfer function.
The zero introduced to the transfer function is equal to the series resistance times the load capacitance. To
calculate the approximate improvement in phase margin, equation 1 can be used.
∆φm1
+
tan–1
ǒ
2×π×UGBW×Rnull ×CL
Ǔ
∆φm1
+
Improvement in phase margin
UGBW
+
Unity
*
gain bandwidth frequency
Rnull
+
Output series resistance
CL
+
Load capacitance
(1)
Where :
The unity-gain bandwidth (UGBW) frequency decreases as the capacitive load increases (see Figure 54 and
Figure 55). To use equation 1, UGBW must be approximated from Figure 54 and Figure 55.
VDD–/GND
VDD+
Rnull
CL
VI+
–
RL
Figure 56. Series-Resistance Circuit
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D – JUNE 1996 – REVISED APRIL 2001
26 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
macromodel information
Macromodel information provided was derived using Microsim Parts, the model generation software used
with Microsim PSpice. The Boyle macromodel (see Note 6) and subcircuit in Figure 57 are generated using
the TLV2231 typical electrical and operating characteristics at TA = 25°C. Using this information, output
simulations of the following key parameters can be generated to a tolerance of 20% (in most cases):
D
Maximum positive output voltage swing
D
Maximum negative output voltage swing
D
Slew rate
D
Quiescent power dissipation
D
Input bias current
D
Open-loop voltage amplification
D
Unity-gain frequency
D
Common-mode rejection ratio
D
Phase margin
D
DC output resistance
D
AC output resistance
D
Short-circuit output current limit
NOTE 6: G. R. Boyle, B. M. Cohn, D. O. Pederson, and J. E. Solomon, “Macromodeling of Integrated Circuit Operational Amplifiers,” IEEE Journal
of Solid-State Circuits, SC-9, 353 (1974).
OUT
+
–
+
–
+
–
+
–
+
–
+
–
+
–+
–
+–
.SUBCKT TLV2231 1 2 3 4 5
C1 11 12 13.51E–12
C2 6 7 50.00E–12
DC 5 53 DX
DE 54 5 DX
DLP 90 91 DX
DLN 92 90 DX
DP 4 3 DX
EGND 99 0 POLY (2) (3,0) (4,0) 0 .5 .5
FB 7 99 POLY (5) VB VC VE VLP
+ VLN 0 90.83E3 –10E3 10E3 10E3 –10E3
GA 6 0 11 12 314.2E–6
GCM 0 6 10 99 242.35E–9
ISS 3 10 DC 87.00E–6
HLIM 90 0 VLIM 1K
J1 11 2 10 JX
J2 12 1 10 JX
R2 6 9 100.0E3
RD1 60 11 3.183E3
RD2 60 12 3.183E3
R01 8 5 25
R02 7 99 25
RP 3 4 6.553E3
RSS 10 99 2.500E6
VAD 60 4 –.5
VB 9 0 DC 0
VC 3 53 DC .795
VE 54 4 DC .795
VLIM 7 8 DC 0
VLP 91 0 DC 12.4
VLN 0 92 DC 17.4
.MODEL DX D (IS=800.0E–18)
.MODEL JX PJF (IS=500.0E–15 BETA=2.939E–3
+ VTO=–.065)
.ENDS
VDD+
RP
IN –2
IN+ 1
VDD–
VAD
RD1
11
J1 J2
10
RSS ISS
3
12
RD2
60
VE
54 DE
DP
VC
DC
4
C1
53
R2 6
9
EGND
VB
FB
C2
GCM GA VLIM
8
5RO1
RO2
HLIM
90 DLP
91
DLN
92
VLNVLP
99
7
Figure 57. Boyle Macromodel and Subcircuit
PSpice and Parts are trademark of MicroSim Corporation.
Macromodels, simulation models, or other models provided by TI,
directly or indirectly, are not warranted by TI as fully representing all
of the specification and operating characteristics of the
semiconductor product to which the model relates.
PACKAGING INFORMATION
Orderable Device Status (1) Package
Type Package
Drawing Pins Package
Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
TLV2231CDBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2231CDBVRG4 ACTIVE SOT-23 DBV 5 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2231CDBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2231CDBVTG4 ACTIVE SOT-23 DBV 5 250 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2231IDBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2231IDBVRG4 ACTIVE SOT-23 DBV 5 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2231IDBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2231IDBVTG4 ACTIVE SOT-23 DBV 5 250 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
PACKAGE OPTION ADDENDUM
www.ti.com 4-Mar-2008
Addendum-Page 1
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0 (mm) B0 (mm) K0 (mm) P1
(mm) W
(mm) Pin1
Quadrant
TLV2231CDBVR SOT-23 DBV 5 3000 180.0 9.0 3.15 3.2 1.4 4.0 8.0 Q3
TLV2231CDBVT SOT-23 DBV 5 250 180.0 9.0 3.15 3.2 1.4 4.0 8.0 Q3
TLV2231IDBVR SOT-23 DBV 5 3000 180.0 9.0 3.15 3.2 1.4 4.0 8.0 Q3
TLV2231IDBVT SOT-23 DBV 5 250 180.0 9.0 3.15 3.2 1.4 4.0 8.0 Q3
PACKAGE MATERIALS INFORMATION
www.ti.com 11-Mar-2008
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TLV2231CDBVR SOT-23 DBV 5 3000 182.0 182.0 20.0
TLV2231CDBVT SOT-23 DBV 5 250 182.0 182.0 20.0
TLV2231IDBVR SOT-23 DBV 5 3000 182.0 182.0 20.0
TLV2231IDBVT SOT-23 DBV 5 250 182.0 182.0 20.0
PACKAGE MATERIALS INFORMATION
www.ti.com 11-Mar-2008
Pack Materials-Page 2
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