TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D – JUNE 1996 – REVISED APRIL 2001
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
D
Output Swing Includes Both Supply Rails
D
Low Noise . . . 15 nV/Hz Typ at f = 1 kHz
D
Low Input Bias Current ...1 pA Typ
D
Fully Specified for Single-Supply 3-V and
5-V Operation
D
Common-Mode Input Voltage Range
Includes Negative Rail
D
High Gain Bandwidth ...2 MHz at
VDD = 5 V With 600- Load
D
High Slew Rate . . . 1.6 V/µs at VDD = 5 V
D
Wide Supply Voltage Range
2.7 V to 10 V
D
Macromodel Included
description
The TLV2231 is a single low-voltage operational amplifier available in the SOT -23 package. It of fers 2 MHz of
bandwidth and 1.6 V/µs of slew rate for applications requiring good ac performance. The device exhibits
rail-to-rail output performance for increased dynamic range in single or split supply applications. The TLV2231
is fully characterized at 3 V and 5 V and is optimized for low-voltage applications.
The TLV2231, exhibiting high input impedance and low noise, is excellent for small-signal conditioning of
high-impedance sources, such as piezoelectric transducers. Because of the micropower dissipation levels
combined with 3-V operation, these devices work well in hand-held monitoring and remote-sensing
applications. In addition, the rail-to-rail output feature with single- or split-supplies makes this family a great
choice when interfacing with analog-to-digital converters (ADCs). The device can also drive 600- loads for
telecom applications.
With a total area of 5.6mm2, the SOT -23 package only requires one-third the board space of the standard 8-pin
SOIC package. This ultra-small package allows designers to place single amplifiers very close to the signal
source, minimizing noise pick-up from long PCB traces. TI has also taken special care to provide a pinout that
is optimized for board layout (see Figure 1). Both inputs are separated by GND to prevent coupling or leakage
paths. The OUT and IN– terminals are on the same end of the board for providing negative feedback. Finally,
gain setting resistors and the decoupling capacitor are easily placed around the package.
VIVDD+
OUTIN
VDD/GND
IN+ C
RI
RF
GND
V+
VO
1
2
3
4
5
Figure 1. Typical Surface Mount Layout for a Fixed-Gain Noninverting Amplifier
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
DBV PACKAGE
(TOP VIEW)
5
43
1
2
IN
VDD–/GND
IN+ VDD+
OUT
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright 2001, Texas Instruments Incorporated
Advanced LinCMOS is a trademark of Texas Instruments.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D JUNE 1996 REVISED APRIL 2001
2POST OFFICE BOX 655303 DALLAS, TEXAS 75265
AVAILABLE OPTIONS
TA
VIOmax AT 25°C
PACKAGED DEVICES
SYMBOL
CHIP
FORM
T
A
V
IO
max
AT
25°C
SOT-23 (DBV)
SYMBOL
FORM
(Y)
0°C to 70°C3 mV TLV2231CDBV VAEC
TLV2231Y
40°C to 85°C3 mV TLV2231IDBV VAEI
TLV2231Y
The DBV package available in tape and reel only.
Chip forms are tested at TA = 25°C only.
TLV2231Y chip information
This chip, when properly assembled, displays characteristics similar to the TLV2231C. Thermal compression
or ultrasonic bonding may be used on the doped-aluminum bonding pads. This chip may be mounted with
conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 10 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
TJmax = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
PIN (2) IS INTERNALLY CONNECTED
TO BACKSIDE OF CHIP.
+
OUT
IN+
IN
VDD+
(5)
(1)
(3) (4)
(2)
VDD/GND
40
(3)
(2)
(1) (5)
(4)
32
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D JUNE 1996 REVISED APRIL 2001
3
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
equivalent schematic
Q3 Q6 Q9 Q12 Q14 Q16
Q2 Q5 Q7 Q8 Q10 Q11
D1
Q17Q15Q13
Q4Q1
R5
C1
VDD+
IN+
IN
R3
R7
R1
R2
OUT
VDD/GND
COMPONENT COUNT
Transistors
Diodes
Resistors
Capacitors
23
5
11
2
Includes both amplifiers and all
ESD, bias, and trim circuitry
R6
C2
R4
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D JUNE 1996 REVISED APRIL 2001
4POST OFFICE BOX 655303 DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, VDD (see Note 1) 12 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential input voltage, VID (see Note 2) ±VDD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, VI (any input, see Note 1) 0.3 V to VDD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input current, II (each input) ±5 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current, IO ±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total current into VDD+ ±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total current out of VDD ±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of short-circuit current (at or below) 25°C (see Note 3) unlimited. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, TA: TLV2231C 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TLV2231I 40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, Tstg 65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: DBV package 260°C. . . . . . . . . . . . . . . . . .
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only , and
functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may af fect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to VDD .
2. Differential voltages are at the noninverting input with respect to the inverting input. Excessive current flows when input is brought
below VDD 0.3 V.
3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded.
DISSIPATION RATING TABLE
PACKAGE
T
A
25°CDERATING F ACTOR T
A
= 70°C T
A
= 85°C
PACKAGE
A
POWER RATING ABOVE TA = 25°C
A
POWER RATING
A
POWER RATING
DBV 150 mW 1.2 mW/°C96 mW 78 mW
recommended operating conditions
TLV2231C TLV2231I
UNIT
MIN MAX MIN MAX
UNIT
Supply voltage, VDD
(see Note 1)
2.7 10 2.7 10 V
Input voltage range, VIVDDVDD+ 1.3 VDDVDD+ 1.3 V
Common-mode input voltage, VIC VDDVDD+ 1.3 VDDVDD+ 1.3 V
Operating free-air temperature, TA0 70 40 85 °C
NOTE 1: All voltage values, except differential voltages, are with respect to VDD .
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D JUNE 1996 REVISED APRIL 2001
5
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 3 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TLV2231C TLV2231I
UNIT
PARAMETER
TEST
CONDITIONS
A
MIN TYP MAX MIN TYP MAX
UNIT
VIO Input offset voltage
V V
V
0.75 3 0.75 3 mV
αVIO
Temperature
coefficient of in
p
ut
V V
V
Full range
05
05
µV/°C
αVIO coe
ffi
c
i
en
t
o
f
i
npu
t
offset voltage
V V
V
0
.
5
0
.
5
µ
V/°C
Input offset voltage
long-term drift
(see Note 4)
V
DD± = ±1.5
V
,
VO = 0,
V
IC = 0,
RS = 50 25°C0.003 0.003 µV/mo
IIO
In
p
ut offset current
25°C 0.5 60 0.5 60 p
A
I
IO
Input
offset
current
Full range 150 150
pA
IIB
In
p
ut bias current
25°C 1 60 1 60 p
A
I
IB
Input
bias
current
Full range 150 150
pA
00.3 0 0.3
25°C
0
to
0.3
to
0
to
0.3
to
VICR
Common-mode input
RS=50
|VIO|5mV
2 2.2 2 2.2
V
V
ICR voltage range
R
S =
50
,
|V
IO
|
5
mV
0 0
V
Full range
0
to
0
to
1.7 1.7
Hi h l l t t
IOH = 1 mA 25°C 2.87 2.87
VOH High-level output
voltage
IOH =2mA
25°C 2.74 2.74 V
voltage
I
OH =
2
mA
Full range 2 2
Llltt
VIC = 1.5 V, IOL = 50 µA 25°C 10 10
VOL Low-level output
voltage
VIC =15V
IOL = 500 µA
25°C 100 100 mV
voltage
V
IC =
1
.
5
V
,
I
OL =
500
µ
A
Full range 300 300
Large
-
signal
V15V
R 600
25°C 1 1.6 1 1.6
AVD
Large signal
differential voltage VIC = 1.5 V,
VO=1Vto2V
R
L =
600
Full range 0.3 0.3 V/mV
VD
amplification
VO
=
1
V
to
2
V
RL = 1 M25°C 250 250
rid Differential input
resistance 25°C 1012 1012
ric Common-mode input
resistance 25°C 1012 1012
cic Common-mode input
capacitance f = 10 kHz 25°C 6 6 pF
zoClosed-loop output
impedance f = 1 MHz, AV = 1 25°C 156 156
CMRR
Common-mode V
IC
= 0 to 1.7 V, 25°C 60 70 60 70
dB
CMRR
rejection ratio
IC ,
VO = 1.5 V, RS = 50 Full range 55 55
dB
kSVR
Supply voltage
rejection ratio
V
DD
= 2.7 V to 8 V, 25°C 70 96 70 96
dB
k
SVR re
j
ec
ti
on ra
ti
o
(VDD /VIO)
DD ,
VIC = VDD/2, No load Full range 70 70
dB
IDD
Su
pp
ly current
VO=15V
No load
25°C 750 1200 750 1200
µA
I
DD
Supply
current
V
O =
1
.
5
V
,
No
load
Full range 1500 1500 µ
A
Full range for the TLV2231C is 0°C to 70°C. Full range for the TLV2231I is 40°C to 85°C.
Referenced to 1.5 V
NOTE 4: T ypical values are based on the input of fset voltage shift observed through 500 hours of operating life test at T A = 150°C extrapolated
to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D JUNE 1996 REVISED APRIL 2001
6POST OFFICE BOX 655303 DALLAS, TEXAS 75265
operating characteristics at specified free-air temperature, VDD = 3 V
PARAMETER
TEST CONDITIONS
TA
TLV2231C TLV2231I
UNIT
PARAMETER
TEST
CONDITIONS
T
A
MIN TYP MAX MIN TYP MAX
UNIT
Slew rate at unity
25°C0.75 1.25 0.75 1.25
SR
Slew
rate
at
unity
gain VO = 1.1 V to 1.9 V,
CL = 100 pFRL = 600
,Full
range 0.5 0.5 V/µs
V
Equivalent input f = 10 Hz 25°C 105 105
nV/Hz
V
n
q
noise voltage f = 1 kHz 25°C 16 16 n
V/H
z
VN(PP)
Peak-to-peak
equivalent in
p
ut
f = 0.1 Hz to 1 Hz 25°C 1.4 1.4
µV
V
N(PP) equ
i
va
l
en
t
i
npu
t
noise voltage f = 0.1 Hz to 10 Hz 25°C 1.5 1.5 µ
V
InEquivalent input
noise current 25°C 0.6 0.6 fA/Hz
VO = 1 V to 2 V,
f 20 kHz
AV = 1
25°C
0.285% 0.285%
Total harmonic
f
=
20
kH
z,
RL = 600 AV = 10
25°C
7.2% 7.2%
THD+N distortion plus
noise
VO
=
1Vto2V,
AV = 1 0.014% 0.014%
noise
VO
=
1
V
to
2
V
,
f = 20 kHz,
§
AV = 10 25°C0.098% 0.098%
RL = 600
§
AV = 100 0.13% 0.13%
Gain-bandwidth
product f = 10 kHz,
CL = 100 pFRL = 600 ,25°C 1.9 1.9 MHz
BOM Maximum output-
swing bandwidth VO(PP) = 1 V,
RL = 600 ,AV = 1,
CL = 100 pF25°C 60 60 kHz
t
Settling time
AV = 1,
Step = 1 V to 2 V, To 0.1%
25
°
C
0.9 0.9
µs
t
s
Settling
time
,
RL = 600 ,
CL = 100 pFTo 0.01%
25°C
1.5 1.5 µ
s
φmPhase margin at
unity gain R
L
= 600
, C
L
= 100 pF
25°C 50°50°
Gain margin
L,
L
25°C 8 8 dB
Full range is 40°C to 85°C.
Referenced to 1.5 V
§Referenced to 0 V
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D JUNE 1996 REVISED APRIL 2001
7
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TLV2231C TLV2231I
UNIT
PARAMETER
TEST
CONDITIONS
A
MIN TYP MAX MIN TYP MAX
UNIT
VIO Input offset voltage
V V
V
0.71 3 0.71 3 mV
αVIO
Temperature
coefficient of in
p
ut
V V
V
Full range
05
05
µV/°C
αVIO coe
ffi
c
i
en
t
o
f
i
npu
t
offset voltage
V V
V
0
.
5
0
.
5
µ
V/°C
Input offset voltage
long-term drift
(see Note 4)
V
DD± = ±2.5
V
,
VO = 0,
V
IC = 0,
RS = 50 25°C0.003 0.003 µV/mo
IIO
In
p
ut offset current
25°C 0.5 60 0.5 60 p
A
I
IO
Input
offset
current
Full range 150 150
pA
IIB
In
p
ut bias current
25°C 1 60 1 60 p
A
I
IB
Input
bias
current
Full range 150 150
pA
00.3 0 0.3
25°C
0
to
0.3
to
0
to
0.3
to
VICR
Common-mode input
RS=50
|VIO|≤5mV
4 4.2 4 4.2
V
V
ICR voltage range
R
S =
50
,
|V
IO
|
5
mV
0 0
V
Full range
0
to
0
to
3.7 3.7
Hi h l l t t
IOH = 1 mA 25°C 4.9 4.9
VOH High-level output
voltage
IOH =4mA
25°C 4.6 4.6 V
voltage
I
OH =
4
mA
Full range 4 4
Llltt
VIC = 2.5 V, IOL = 500 µA 25°C 80 80
VOL Low-level output
voltage
VIC =25V
IOL =1mA
25°C 160 160 mV
voltage
V
IC =
2
.
5
V
,
I
OL =
1
mA
Full range 500 500
Large
-
signal
V25V
R 600
25°C 1 1.5 1 1.5
AVD
Large signal
differential voltage VIC = 2.5 V,
VO=1Vto4V
R
L =
600
Full range 0.3 0.3 V/mV
VD
amplification
VO
=
1
V
to
4
V
RL = 1 M25°C 400 400
rid Differential input
resistance 25°C 1012 1012
ric Common-mode input
resistance 25°C 1012 1012
cic Common-mode input
capacitance f = 10 kHz 25°C 6 6 pF
zoClosed-loop output
impedance f = 1 MHz, AV = 1 25°C 138 138
CMRR
Common-mode V
IC
= 0 to 2.7 V, 25°C 60 70 60 70
dB
CMRR
rejection ratio
IC ,
VO = 2.5 V, RS = 50 Full range 55 55
dB
kSVR
Supply voltage
rejection ratio
V
DD
= 4.4 V to 8 V, 25°C 70 96 70 96
dB
k
SVR re
j
ec
ti
on ra
ti
o
(VDD /VIO)
DD ,
VIC = VDD/2, No load Full range 70 70
dB
IDD
Su
pp
ly current
VO=25V
No load
25°C 850 1300 850 1300
µA
I
DD
Supply
current
V
O =
2
.
5
V
,
No
load
Full range 1600 1600 µ
A
Full range for the TLV2231C is 0°C to 70°C. Full range for the TLV2231I is 40°C to 85°C.
Referenced to 2.5 V
NOTE 5: T ypical values are based on the input of fset voltage shift observed through 500 hours of operating life test at T A = 150°C extrapolated
to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D JUNE 1996 REVISED APRIL 2001
8POST OFFICE BOX 655303 DALLAS, TEXAS 75265
operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER
TEST CONDITIONS
TA
TLV2231C TLV2231I
UNIT
PARAMETER
TEST
CONDITIONS
T
A
MIN TYP MAX MIN TYP MAX
UNIT
Slew rate at unity
VO=15Vto35V
R 600
25°C1 1.6 1 1.6
SR
Slew
rate
at
unity
gain
V
O =
1
.
5
V
to
3
.
5
V
,
CL = 100 pF
R
L =
600
,Full
range 0.7 0.7 V/µs
V
Equivalent input f = 10 Hz 25°C 100 100
nV/Hz
V
n
q
noise voltage f = 1 kHz 25°C 15 15 n
V/H
z
VN(PP)
Peak-to-peak
equivalent in
p
ut
f = 0.1 Hz to 1 Hz 25°C 1.4 1.4
µV
V
N(PP) equ
i
va
l
en
t
i
npu
t
noise voltage f = 0.1 Hz to 10 Hz 25°C 1.5 1.5 µ
V
InEquivalent input
noise current 25°C 0.6 0.6 fA/Hz
VO = 1.5 V to 3.5 V,
f 20 kHz
AV = 1
25°C
0.409% 0.409%
Total harmonic
f
=
20
kH
z,
RL = 600 AV = 10
25°C
3.68% 3.68%
THD+N distortion plus
noise
VO
=
1.5 V to 3.5 V,
AV = 1 0.018% 0.018%
noise
VO
=
1
.
5
V
to
3
.
5
V
,
f = 20 kHz,
§
AV = 10 25°C0.045% 0.045%
RL = 600
§
AV = 100 0.116% 0.116%
Gain-bandwidth
product f = 10 kHz,
CL = 100 pFRL = 600 ,25°C 2 2 MHz
BOM Maximum
output-swing
bandwidth
VO(PP) = 1 V,
RL = 600 ,AV = 1,
CL = 100 pF25°C 300 300 kHz
t
Settling time
AV = 1,
Step = 1.5 V to 3.5 V, To 0.1%
25
°
C
0.95 0.95
µs
t
s
Settling
time
,
RL = 600 ,
CL = 100 pFTo 0.01%
25°C
2.4 2.4 µ
s
φmPhase margin at
unity gain R
L
= 600
, C
L
= 100 pF
25°C 48°48°
Gain margin
L,
L
25°C 8 8 dB
Full range is 40°C to 85°C.
Referenced to 2.5 V
§Referenced to 0 V
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D JUNE 1996 REVISED APRIL 2001
9
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
electrical characteristics at VDD = 3 V, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TLV2231Y
UNIT
PARAMETER
TEST
CONDITIONS
MIN TYP MAX
UNIT
VIO Input offset voltage
V± ±15V
V0
V0
750 µV
IIO Input offset current VDD± = ±1.5 V,
RS=50
VIC = 0, VO = 0, 0.5 pA
IIB Input bias current
RS
=
50
1 pA
0.3
VICR Common-mode input voltage range |VIO| ≤5 mV, RS = 50 to V
ICR
gg
IO
S
2.2
VOH High-level output voltage IOH = 1 mA 2.87 V
VOL
Low level out
p
ut voltage
VIC = 1.5 V, IOL = 50 µA 10
mV
V
OL
Low
-
level
output
voltage
VIC = 1.5 V, IOL = 500 µA 100
mV
AVD
Lar
g
e-si
g
nal differential volta
g
e
VO=1Vto2V
RL = 600 1.6
V/mV
A
VD
gg g
amplification
V
O =
1
V
to
2
V
RL = 1 M250
V/mV
rid Differential input resistance 1012
ric Common-mode input resistance 1012
cic Common-mode input capacitance f = 10 kHz 6 pF
zoClosed-loop output impedance f = 1 MHz, AV = 1 156
CMRR Common-mode rejection ratio VIC = 0 to 1.7 V, VO = 0, RS = 50 60 70 dB
kSVR
Suppl
y
volta
g
e rejection ratio
VDD =27Vto8V
VIC =0
No load
96
dB
k
SVR
ygj
(VDD/VIO)
V
DD =
2
.
7
V
to
8
V
,
V
IC =
0
,
No
load
96
dB
IDD Supply current VO = 0, No load 750 µA
Referenced to 1.5 V
electrical characteristics at VDD = 5 V, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TLV2231Y
UNIT
PARAMETER
TEST
CONDITIONS
MIN TYP MAX
UNIT
VIO Input offset voltage
V± ±15V
V0
V0
710 µV
IIO Input offset current VDD± = ±1.5 V,
RS=50
VIC = 0, VO = 0, 0.5 pA
IIB Input bias current
RS
=
50
1 pA
0.3
VICR Common-mode input voltage range |VIO| ≤5 mV, RS = 50 to V
ICR
gg
IO
S
4.2
VOH High-level output voltage IOH = 1 mA 4.9 V
VOL
Low level out
p
ut voltage
VIC = 2.5 V, IOL = 500 µA 80
mV
V
OL
Low
-
level
output
voltage
VIC = 2.5 V, IOL = 1 mA 160
mV
AVD
Lar
g
e-si
g
nal differential volta
g
e
VO=1Vto2V
RL = 600 15
V/mV
A
VD
gg g
amplification
V
O =
1
V
to
2
V
RL = 1 M400
V/mV
rid Differential input resistance 1012
ric Common-mode input resistance 1012
cic Common-mode input capacitance f = 10 kHz 6 pF
zoClosed-loop output impedance f = 1 MHz, AV = 1 138
CMRR Common-mode rejection ratio VIC = 0 to 1.7 V, VO = 0, RS = 50 60 70 dB
kSVR
Suppl
y
volta
g
e rejection ratio
VDD =27Vto8V
VIC =0
No load
96
dB
k
SVR
ygj
(VDD/VIO)
V
DD =
2
.
7
V
to
8
V
,
V
IC =
0
,
No
load
96
dB
IDD Supply current VO = 0, No load 850 µA
Referenced to 2.5 V
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D JUNE 1996 REVISED APRIL 2001
10 POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
VIO
In
p
ut offset voltage
Distribution 2, 3
V
IO
Input
offset
voltage
vs Common-mode input voltage
,
4, 5
αVIO Input offset voltage temperature coef ficient Distribution 6, 7
IIB/IIO Input bias and input offset currents vs Free-air temperature 8
VI
In
p
ut voltage
vs Suppl
y
volta
g
e 9
V
I
Input
voltage
yg
vs Free-air temperature 10
VOH High-level output voltage vs High-level output current 11, 14
VOL Low-level output voltage vs Low-level output current 12, 13, 15
VO(PP) Maximum peak-to-peak output voltage vs Frequency 16
IOS
Short circuit out
p
ut current
vs Suppl
y
volta
g
e 17
I
OS
Short
-
circuit
output
current
yg
vs Free-air temperature 18
VOOutput voltage vs Differential input voltage 19, 20
AVD Differential voltage amplification vs Load resistance 21
AVD
Large signal differential voltage am
p
lification
vs Frequency 22, 23
A
VD
Large
-
signal
differential
voltage
amplification
qy
vs Free-air temperature
,
24, 25
zoOutput impedance vs Frequency 26, 27
CMRR
Common mode rejection ratio
vs Frequenc
y
28
CMRR
Common
-
mode
rejection
ratio
qy
vs Free-air temperature 29
kSVR
Su
pp
ly voltage rejection ratio
vs Frequenc
y
30, 31
k
SVR
Supply
-
voltage
rejection
ratio
qy
vs Free-air temperature
,
32
IDD Supply current vs Supply voltage 33
SR
Slew rate
vs Load capacitance 34
SR
Slew
rate
vs Free-air temperature 35
VOInverting large-signal pulse response vs Time 36, 37
VOVoltage-follower large-signal pulse response vs Time 38, 39
VOInverting small-signal pulse response vs Time 40, 41
VOVoltage-follower small-signal pulse response vs Time 42, 43
VnEquivalent input noise voltage vs Frequency 44, 45
Noise voltage (referred to input) Over a 10-second period 46
THD + N Total harmonic distortion plus noise vs Frequency 47
Gain bandwidth
p
roduct
vs Free-air temperature 48
Gain
-
bandwidth
product
vs Supply voltage 49
Gain margin vs Load capacitance 50, 51
φ
Phase margin
vs Frequency 22, 23
φ
m
Phase
margin
qy
vs Load capacitance
,
52, 53
B1Unity-gain bandwidth vs Load capacitance 54, 55
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D JUNE 1996 REVISED APRIL 2001
11
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 2
Precentage of Amplifiers %
DISTRIBUTION OF TLV2231
INPUT OFFSET VOLTAGE
VIO Input Offset Voltage mV
10
6
2
0
12
16
20
18
14
8
4
3210 1 2 3
380 Amplifiers From 1 W afer Lot
VDD = ±1.5 V
TA = 25°C
Figure 3
Precentage of Amplifiers %
DISTRIBUTION OF TLV2231
INPUT OFFSET VOLTAGE
VIO Input Offset Voltage mV
10
6
2
0
12
16
20
18
14
8
4
3210 1 2 3
380 Amplifiers From 1 W afer
Lot
VDD = ±2.5 V
TA = 25°C
Figure 4
Input Offset Voltage mV
INPUT OFFSET VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
ÁÁ
ÁÁ
VIO
VIC Common-Mode Input Voltage V
1
0.8
0.6
0.4
0.2
0
0.2
0.4
0.6
0.8
11012
VDD = 3 V
RS = 50
TA = 25°C
3
Figure 5
Input Offset Voltage mV
INPUT OFFSET VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
ÁÁ
ÁÁ
ÁÁ
VIO
VIC Common-Mode Input Voltage V
1
0.8
0.6
0.4
0.2
0
0.2
0.4
0.6
0.8
1
1012345
VDD = 5 V
RS = 50
TA = 25°C
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D JUNE 1996 REVISED APRIL 2001
12 POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 6
DISTRIBUTION OF TLV2231 INPUT OFFSET
VOLTAGE TEMPERATURE COEFFICIENT
Percentage of Amplifiers %
αVIO Input Offset Voltage
Temperature Coefficient µV/°C
15
10
5
0
20
25
30
432101234
32 Amplifiers From
1 W afer Lots
VDD± = ±1.5 V
P Package
TA = 25°C to 125°C
Figure 7
DISTRIBUTION OF TLV2231 INPUT OFFSET
VOLTAGE TEMPERATURE COEFFICIENT
Percentage of Amplifiers %
αVIO Input Offset Voltage
Temperature Coefficient µV/°C
15
10
5
0
20
25
30
432101234
32 Amplifiers From
1 W afer Lots
VDD± = ±2.5 V
P Package
TA = 25°C to 125°C
Figure 8
IIB and IIO Input Bias and Input Offset Currents pA
INPUT BIAS AND INPUT OFFSET CURRENTS
vs
FREE-AIR TEMPERATURE
IIB IIO
TA Free-Air Temperature °C
100
90
80
70
60
50
40
30
20
10
025 45 65 85 105 125
VDD± = ±2.5 V
VIC = 0
VO = 0
RS = 50
IIB IIO
Figure 9
0
4
1 1.5 2 2.5
Input Voltage V
2
1
3
INPUT VOLTAGE
vs
SUPPLY VOLTAGE
5
3 3.5 4
1
2
3
4
5
RS = 50
TA = 25°C
|VIO| 5 mV
ÁÁ
ÁÁ
VI
|VDD±| Supply Voltage V
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D JUNE 1996 REVISED APRIL 2001
13
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 10
Input Voltage V
INPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
ÁÁ
VI
TA Free-Air Temperature °C
2
1
0
3
4
5
1
55 35 15 5 25 45 65 85
|VIO| 5 mV
VDD = 5 V
105 125
Figure 11
High-Level Output Voltage V
HIGH-LEVEL OUTPUT VOLTAGE†‡
vs
HIGH-LEVEL OUTPUT CURRENT
ÁÁ
ÁÁ
VOH
|IOH| High-Level Output Current mA
2
1.5
1
00
2.5
3VDD = 3 V
TA = 40°C
TA = 25°C
TA = 85°C
0.5
TA = 125°C
51015
Figure 12
0.6
0.4
0.2
00123
Low-Level Output Voltage V
0.8
1
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
1.2
45
ÁÁ
ÁÁ
VOL
IOL Low-Level Output Current mA
VDD = 3 V
TA = 25°C
VIC = 0
VIC = 0.75 V
VIC = 1.5 V
Figure 13
Low-Level Output Voltage V
LOW-LEVEL OUTPUT VOLTAGE†‡
vs
LOW-LEVEL OUTPUT CURRENT
ÁÁ
ÁÁ
ÁÁ
VOL
IOL Low-Level Output Current mA
0.4
0.2
1.2
00123
0.8
0.6
1
1.4
45
TA = 85°C
TA = 25°C
TA = 125°C
VDD = 3 V
VIC = 1.5 V
TA = 40°C
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D JUNE 1996 REVISED APRIL 2001
14 POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 14
High-Level Output Voltage V
HIGH-LEVEL OUTPUT VOLTAGE†‡
vs
HIGH-LEVEL OUTPUT CURRENT
ÁÁ
ÁÁ
VOH
|IOH| High-Level Output Current mA
0
VDD = 5 V
TA = 40°C
TA = 25°C
TA = 85°C
TA = 125°C
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
051015202530
Figure 15
Low-Level Output Voltage V
LOW-LEVEL OUTPUT VOLTAGE†‡
vs
LOW-LEVEL OUTPUT CURRENT
ÁÁ
ÁÁ
VOL
IOL Low-Level Output Current mA
0.6
0.4
0.2
001 2 3
1
1.2
1.4
456
0.8
VDD = 5 V
VIC = 2.5 V
TA = 40°C
TA = 85°C
TA = 25°C
TA = 125°C
Figure 16
Maximum Peak-to-Peak Output Voltage V
f Frequency Hz
MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE
vs
FREQUENCY
ÁÁ
ÁÁ
ÁÁ
VO(PP)
4
2
1
5
3
0102103104106
105
RI = 600
TA = 25°C
VDD = 5 V
VDD = 3 V
Figure 17
Short-Circuit Output Current mA
SHORT-CIRCUIT OUTPUT CURRENT
vs
SUPPLY VOLTAGE
IOS
VDD Supply Voltage V
30
25
20
15
10
5
0
5
10
15
20
25
30 2345678
VID = 100 mV
VID = 100 mV
VO = VDD/2
VIC = VDD/2
TA = 25°C