800V 52A APT8014L2FLL *G POWER MOS 7 R 0.16 APT8014L2FLLG* Denotes RoHS Compliant, Pb Free Terminal Finish. FREDFET TO-264 Max (R) Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with Microsemi's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Increased Power Dissipation * Easier To Drive * Lower Gate Charge, Qg * Popular TO-264 MAX Package D G S * FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25C unless otherwise specified. Parameter APT8014L2FLL(G) UNIT 800 Volts Drain-Source Voltage 52 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 893 Watts Linear Derating Factor 7.14 W/C PD TJ,TSTG 208 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS 1 -55 to 150 Amps 52 1 Single Pulse Avalanche Energy C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts 50 4 mJ 3200 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 800 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, 26A) TYP MAX UNIT Volts 0.160 Ohms Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com A 5-2006 Characteristic / Test Conditions 050-7104 Rev B Symbol DYNAMIC CHARACTERISTICS Symbol APT8014L2FLL(G) Characteristic Ciss Test Conditions Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V C rss Reverse Transfer Capacitance f = 1 MHz Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr 3 RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 52A @ 25C RG = 0.6 15 INDUCTIVE SWITCHING @ 25C Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 6 1091 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy VDD = 533V, VGS = 15V nC ns 1135 ID = 52A, RG = 3 INDUCTIVE SWITCHING @ 125C 6 J 1662 VDD = 533V VGS = 15V ID = 52A, RG = 3 UNIT pF 248 285 30 170 20 19 69 VDD = 400V Fall Time MAX 7238 1402 ID = 52A @ 25C Turn-off Delay Time tf TYP VGS = 10V Rise Time td(off) MIN 1383 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) 208 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -52A) 1.3 Volts 18 V/ns dv/ Peak Diode Recovery dt dv/ dt 52 5 t rr Reverse Recovery Time (IS = -52A, di/dt = 100A/s) Tj = 25C 440 Tj = 125C 1100 Q rr Reverse Recovery Charge (IS = -52A, di/dt = 100A/s) Tj = 25C 2.0 Tj = 125C 13 IRRM Peak Recovery Current (IS = -52A, di/dt = 100A/s) Tj = 25C 15 Tj = 125C 30 Amps ns C Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.14 RJC Junction to Case RJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.14 0.9 0.12 0.7 Note: 0.5 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-7104 Rev B 5-2006 0.16 0.08 0.06 0.3 0.04 0 t1 t2 Duty Factor D = t1/t2 0.02 Peak TJ = PDM x ZJC + TC 0.1 0.05 10-5 SINGLE PULSE 10-4 C/W 4 Starting Tj = +25C, L = 2.37mH, RG = 25, Peak IL = 52A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID52A di/dt 700A/s VR 800V TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.10 UNIT 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves 0.0509 0.0894 Dissipated Power (Watts) 0.0522 0.988 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. ID, DRAIN CURRENT (AMPERES) TC ( C) ZEXT TJ ( C) 100 80 TJ = -55C 60 TJ = +25C 40 20 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 6V 60 5.5V 40 5V 20 1.40 NORMALIZED TO V = 10V @ 26A GS 1.30 1.20 VGS=10V 1.10 1.00 VGS=20V 0.90 0.80 0 2.5 I D V 20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 = 26A GS = 10V 2.0 1.5 1.0 0.5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 80 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 5-2006 ID, DRAIN CURRENT (AMPERES) 40 0.0 -50 6.5V 100 1.15 60 50 8V 7V 050-7104 Rev B 0 TJ = +125C VGS =15 & 10V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) 120 VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE 120 0 FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 140 APT8014L2FLL(G) 140 100 10,000 100S 50 10 1mS 5 100 = 52A 12 VDS= 160V VDS= 400V VDS= 640V 8 4 0 0 50 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 16 D Coss 1,000 Crss 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I Ciss 10mS TC =+25C TJ =+150C SINGLE PULSE 1 APT8014L2FLL(G) 20,000 OPERATION HERE LIMITED BY RDS (ON) C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 208 100 TJ =+150C TJ =+25C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 140 160 V td(off) 140 = 533V DD R G 120 = 3 T = 125C J V 100 DD R G J L = 100H 60 td(on) 0 10 20 V DD R G 30 40 50 60 70 80 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 12000 = 533V I 10000 T = 125C J L = 100H EON includes diode reverse recovery. 1500 Eon 1000 Eoff 500 0 10 20 30 40 50 60 70 80 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 20 V = 3 SWITCHING ENERGY (J) SWITCHING ENERGY (J) 5-2006 tr 0 10 40 50 60 70 80 ID (A) FIGURE 14, DELAY TIMES vs CURRENT 050-7104 Rev B 60 20 20 2000 80 40 40 2500 tf = 533V = 3 T = 125C 80 3000 L = 100H 100 tr and tf (ns) td(on) and td(off) (ns) 120 DD D 30 = 533V = 52A Eoff T = 125C J L = 100H E ON includes 8000 diode reverse recovery. 6000 4000 Eon 2000 0 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE Typical Performance Curves APT8014L2FLL(G) 10 % 90% Gate Voltage TJ = 125 C T = 125 C J t d(off) td(on) Drain Voltage 90% 90% tr 5% t f 5% 10% 10 % Switching Energy Switching Energy Drain Current 0 Figure 19, Turn-off Switching Waveforms and Definitions Figure 18, Turn-on Switching Waveforms and Definitions APT30DF60 V DD IC V CE G D.U.T. Figure 20, Inductive Switching Test Circuit TO-264 MAXTM(L2) Package Outline e1 SAC: Tin, Silver, Copper 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 25.48 (1.003) 26.49 (1.043) 19.81 (.780) 21.39 (.842) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 2.29 (.090) 2.69 (.106) Gate Drain Source 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 5-2006 2.29 (.090) 2.69 (.106) 050-7104 Rev B Drain 5.79 (.228) 6.20 (.244)