050-7104 Rev B 5-2006
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
G
D
S
TO-264
Max
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with Microsemi's
patented metal gate structure.
POWER MOS 7 R FREDFET
• Lower Input Capacitance • Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive
• Lower Gate Charge, Qg • Popular TO-264 MAX Package
•FAST RECOVERY BODY DIODE
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, 26A)
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
UNIT
Volts
Ohms
µA
nA
Volts
MIN TYP MAX
800
0.160
250
1000
±100
35
APT8014L2FLL(G)
800
52
208
±30
±40
893
7.14
-55 to 150
300
52
50
3200
APT8014L2FLL APT8014L2FLLG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
800V 52A 0.16ΩΩ
ΩΩ
Ω
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
050-7104 Rev B 5-2006
APT8014L2FLL(G)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -52A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -52A, di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -52A, di/dt = 100A/µs)
Peak Recovery Current
(IS = -52A, di/dt = 100A/µs)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
µC
Amps
MIN TYP MAX
52
208
1.3
18
Tj = 25°C 440
Tj = 125°C 1100
Tj = 25°C 2.0
Tj = 125°C 13
Tj = 25°C 15
Tj = 125°C 30
Symbol
RθJC
RθJA
MIN TYP MAX
0.14
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 2.37mH, RG = 25Ω, Peak IL = 52A
5dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID52A di/dt ≤ 700A/µs VR ≤ 800V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 400V
ID = 52A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 400V
ID = 52A @ 25°C
RG = 0.6Ω
INDUCTIVE SWITCHING @ 25°C
VDD = 533V, VGS = 15V
ID = 52A, RG = 3Ω
INDUCTIVE SWITCHING @ 125°C
VDD = 533V VGS = 15V
ID = 52A, RG = 3Ω
MIN TYP MAX
7238
1402
248
285
30
170
20
19
69
15
1091
1135
1662
1383
UNIT
pF
nC
ns
µJ
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
PDM
SINGLE PULSE
ZθJC, THERMAL IMPEDANCE (°C/W)
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0.5
0.1
0.3
0.7
0.9
0.05
050-7104 Rev B 5-2006
Typical Performance Curves APT8014L2FLL(G)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VGS(TH), THRESHOLD VOLTAGE BVDSS, DRAIN-TO-SOURCE BREAKDOWN RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES)
(NORMALIZED) VOLTAGE (NORMALIZED)
5.5V
6V
6.5V
5V
VGS =15 & 10V
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
7V
8V
0 5 10 15 20 25 30
012345678 0 20 40 60 80100120
25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
140
120
100
80
60
40
20
0
60
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0.0
ID = 26A
VGS = 10V
NORMALIZED TO
VGS = 10V @ 26A
140
120
100
80
60
40
20
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.0509 0.0894
0.0522 0.988
Dissipated Power
(Watts)
TJ (C) TC (C)
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
ZEXT
050-7104 Rev B 5-2006
APT8014L2FLL(G)
Crss
Ciss
Coss
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
IDR, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)
1 10 100 800 0 10 20 30 40 50
0 50 100 150 200 250 300 350 400 0.3 0.5 0.7 0.9 1.1 1.3 1.5
208
100
50
10
5
1
16
12
8
4
0
TC =+25°C
TJ =+150°C
SINGLE PULSE
10mS
1mS
100µS
TJ
=+150°C
TJ
=+25°C
VDS= 400V
VDS= 160V
VDS= 640V
ID = 52A
20,000
10,000
1,000
100
200
100
10
1
OPERATION HERE
LIMITED BY RDS (ON)
ID (A) ID (A)
FIGURE 14, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A) RG, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
VDD = 533V
RG = 3Ω
TJ = 125°C
L = 100µH
Eon
Eoff
tr
tf
SWITCHING ENERGY (µJ) td(on) and td(off) (ns)
SWITCHING ENERGY (µJ) tr and tf (ns)
10 20 30 40 50 60 70 80 10 20 30 40 50 60 70 80
10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 45 50
VDD = 533V
ID = 52A
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery.
td(on)
td(off)
Eon
Eoff
160
140
120
100
80
60
40
20
0
3000
2500
2000
1500
1000
500
0
VDD = 533V
RG = 3Ω
TJ = 125°C
L = 100µH
VDD = 533V
RG = 3Ω
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery.
140
120
100
80
60
40
20
0
12000
10000
8000
6000
4000
2000
0
050-7104 Rev B 5-2006
Typical Performance Curves APT8014L2FLL(G)
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
TO-264 MAXTM(L2) Package Outline
Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions
I
C
D.U.T.
APT30DF60
V
CE
Figure 20, Inductive Switching Test Circuit
V
DD
G
TJ = 125 C
Drain Current
Drain Voltage
Gate Voltage
90%
0
10%
90%
t
d(off)
tf
Switching Energy
10 %
t
d(on)
90%
10 %
5 %
TJ = 125 C
t
r
Switching Energy
5 %
e1 SAC: Tin, Silver, Copper
