Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 6
1Publication Order Number:
MMBD330T1/D
MMBD330T1G,
SMMBD330T1G,
MMBD770T1G,
SMMBD770T1G
Schottky Barrier Diodes
Schottky barrier diodes are designed primarily for high−efficiency
UHF and VHF detector applications. Readily available to many other
fast switching RF and digital applications. They are housed in the
SOT−323/SC−70 package which is designed for low−power surface
mount applications.
Features
Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage
Available in 8 mm Tape and Reel
AEC Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage
MMBD330T1G, SMMBD330T1G
MMBD770T1G, SMMBD770T1G
VR30
70
Vdc
Forward Continuous Current (DC) IF200 mA
Nonrepetitive Peak Forward Current
(Note 1)
IFSM 1.0 A
Forward Power Dissipation
TA = 25C
PF120
mW
Junction Temperature TJ−55 to +125 C
Storage Temperature Range Tstg −55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 60 Hz Halfsine.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
*Date Code orientation may vary depending
upon the manufacturing location.
http://onsemi.com
Device Package Shipping†
ORDERING INFORMATION
MARKING DIAGRAMS
SC−70/SOT−323
CASE 419
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBD770T1G SC−70
(Pb−Free)
3,000/Tape & Reel
13
MMBD330T1G SC−70
(Pb−Free)
3,000/Tape & Reel
XX M G
G
1
XX = Specific Device Code
4T = MMBD330T1
5H = MMBD770T1
M = Date Code
G= Pb−Free Package
(Note: Microdot may be in either location)
SMMBD330T1G SC−70
(Pb−Free)
3,000/Tape & Reel
SMMBD770T1G SC−70
(Pb−Free)
3,000/Tape & Reel
MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(IR = 10 mA)
MMBD330T1G, SMMBD330T1G
MMBD770T1G, SMMBD770T1G
V(BR)R
30
70
−
−
−
−
Volts
Diode Capacitance
(VR = 15 Volts, f = 1.0 MHZ)
MMBD330T1G, SMMBD330T1G
(VR = 20 Volts, f = 1.0 MHZ)
MMBD770T1G, SMMBD770T1G
CT
−
−
0.9
0.5
1.5
1.0
pF
Reverse Leakage
(VR = 25 V)
MMBD330T1G, SMMBD330T1G
(VR = 35 V)
MMBD770T1G, SMMBD770T1G
IR
−
−
13
9.0
200
200
nAdc
Forward Voltage
(IF = 1.0 mAdc)
MMBD330T1G, SMMBD330T1G
(IF = 10 mA)
(IF = 1.0 mAdc)
MMBD770T1G, SMMBD770T1G
(IF = 10 mA)
VF
−
−
−
−
0.38
0.52
0.42
0.70
0.45
0.60
0.50
1.0
Vdc
MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G
http://onsemi.com
3
TYPICAL CHARACTERISTICS
MMBD330T1G, SMMBD330T1G
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Total Capacitance
IF, FORWARD CURRENT (mA)
Figure 2. Minority Carrier Lifetime
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Leakage
VF, FORWARD VOLTAGE (VOLTS)
Figure 4. Forward Voltage
KRAKAUER METHOD
f = 1.0 MHz
, FORWARD CURRENT (mA)IF
, REVERSE LEAKAGE ( A)IRm
0.2 0.4 0.6 0.8 1.0 1.20 6.0 12 18 24
10
1.0
0.1
0.01
0.001
0204060
500
0
80 1000 3.0 6.0 9.0 12 15 21
2.8
3024 2718
2.4
2.0
1.6
1.2
0.8
0
100
10
1.0
0.1
30
10 30 50 70 90
400
300
200
100
0.4
, MINORITY CARRIER LIFETIME (ps)t
, TOTAL CAPACITANCE (pF)CT
TA = -40C
TA = 85C
TA = 25C
TA = 100C
TA = 75C
TA = 25C
MMBD330T1
MMBD330T1
MMBD330T1
MMBD330T1
MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G
http://onsemi.com
4
TYPICAL CHARACTERISTICS
MMBD770T1G, SMMBD770T1G
Figure 5. Total Capacitance Figure 6. Minority Carrier Lifetime
Figure 7. Reverse Leakage Figure 8. Forward Voltage
VR, REVERSE VOLTAGE (VOLTS) IF, FORWARD CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS)
KRAKAUER METHOD
f = 1.0 MHz
, FORWARD CURRENT (mA)IF
, REVERSE LEAKAGE ( A)IRm
0.2 0.4 0.8 1.2 1.6 2.00 102030 40
10
1.0
0.1
0.01
0.001
0204060
500
0
80 1000 5.0 10 15 20 25 35 5040 4530
2.0
1.6
1.2
0.8
0
100
10
1.0
0.1
50
10 30 50 70 90
400
300
200
100
0.4
, MINORITY CARRIER LIFETIME (ps)t
, TOTAL CAPACITANCE (pF)CT
TA = -40C
TA = 85C
TA = 25C
TA = 100C
TA = 75C
TA = 25C
MMBD770T1
MMBD770T1
MMBD770T1
MMBD770T1
MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G
http://onsemi.com
5
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
AA2
D
e1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L
2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
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MMBD330T1/D
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