FDS5670 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. D D 10 A, 60 V. RDS(ON) = 0.014 @ VGS = 10 V RDS(ON) = 0.017 @ VGS = 6 V. Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. D D SO-8 S S S G Absolute Maximum Ratings Symbol Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current - Continuous (Note 1a) - Pulsed PD Power Dissipation for Single Operation 6 3 7 2 8 1 Ratings Units 60 V 20 10 V A 50 (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, Tstg 4 TA = 25C unless otherwise noted Parameter VDSS 5 Operating and Storage Junction Temperature Range W 1 -55 to +150 C Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 C/W RJC Thermal Resistance, Junction-to-Case (Note 1) 25 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS5670 FDS5670 13'' 12mm 2500 units 1999 Fairchild Semiconductor Corporation FDS5670 Rev. B FDS5670 August 1999 Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS TJ IDSS Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 A nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA On Characteristics 60 V 58 mV/C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A VGS(th) TJ RDS(on) Gate Threshold Voltage Temperature Coefficient ID = 250 A, Referenced to 25C 6.8 Static Drain-Source On-Resistance 0.012 0.019 0.014 ID(on) On-State Drain Current VGS = 10 V, ID = 10 A VGS = 10 V, ID = 10 A, TJ=125C VGS = 6 V, ID = 9 A VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 10 A 2 2.4 4 V mV/C 0.014 0.027 0.017 25 A 39 S 2900 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) VDS = 15 V, VGS = 0 V f = 1.0 MHz 685 pF 180 pF (Note 2) VDD = 30 V, ID = 1 A VGS = 10 V, RGEN = 6 16 29 ns 10 20 ns Turn-Off Delay Time 50 80 ns tf Turn-Off Fall Time 23 42 ns Qg Total Gate Charge 49 70 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 20 V, ID = 10 A VGS = 10 V, 9 nC 10.4 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.72 2.1 A 1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. a) 50 C/W when mounted on a 0.5 in2 pad of 2 oz. copper. b) 105 C/W when mounted on a 0.02 in2 pad of 2 oz. copper. c) 125 C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% FDS5670 Rev. B FDS5670 Electrical Characteristics FDS5670 Typical Characteristics 2 60 50 6V 5V 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) VGS = 10V 40 4V 30 20 10 3.5V 0 1.8 VGS = 4.0V 1.6 4.5V 1.4 5.0V 1.2 6.0V 10V 0.8 0 1 2 3 4 0 10 20 VDS, DRAIN-SOURCE VOLTAGE (V) 40 50 60 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.05 2 ID = 10A VGS = 10V 1.8 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. 1.6 1.4 1.2 1 0.8 0.6 ID = 10A 0.04 0.03 o TA = 125 C 0.02 o TA = 25 C 0.01 0 0.4 -50 -25 0 25 50 75 100 125 3 150 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) o TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 60 o 25 C IS, REVERSE DRAIN CURRENT (A) o TA = -55 C VDS =5V 50 ID, DRAIN CURRENT (A) 7.0V 1 o 125 C 40 30 20 10 VGS=0 10 1 TJ=125oC 0.1 25oC -55oC 0.01 0.001 0.0001 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS5670 Rev. B (continued) 10 5000 VDS = 10V ID = 10A f = 1MHz VGS = 0 V 20V 8 4000 30V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) FDS5670 Typical Characteristics 6 4 2 CISS 3000 2000 1000 0 COSS CRSS 0 0 10 20 30 40 50 0 10 Qg, GATE CHARGE (nC) 20 Figure 8. Capacitance Characteristics. Figure 7. Gate-Charge Characteristics. 100 50 RDS(ON) LIMIT 100s SINGLE PULSE RJA =125C/W TA = 25C 1ms 40 10ms 10 100ms POWER (W) 1s 10s 1 DC VGS = 10V SINGLE PULSE o RJA = 125 C/W 0.1 0.01 0.1 30 20 10 o TA = 25 C 1 10 0 0.001 100 0.01 VDS, DRAIN-SOURCE VOLTAGE (V) r(t), NORM ALIZED EFFECTIVE Figure 9. Maximum Safe Operating Area. TR ANSI ENT TH ER MAL RESISTANC E ID, DRAIN CURRENT (A) 30 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.1 1 10 SINGLE PULSE TIME (SEC) 100 300 Figure 10. Single Pulse Maximum Power Dissipation. 1 0.5 0.2 0.1 0.05 D = 0.5 R J A (t) = r(t) * R J A R J A= 125C /W 0.2 0.1 00 .5 P(pk ) 0.0 2 0.02 t1 0.01 0.01 S i n g le P ul s e t2 TJ - TA = P * RJA ( t) 0.0 05 D u t y C y c l e, D = t 1 /t2 0.0 02 0.0 01 0.0001 0.0 01 0.01 0.1 1 10 100 300 t 1, TI M E (s e c ) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. FDS5670 Rev. B SO-8 Tape and Reel Data and Package Dimensions SOIC(8lds) Packaging Configuration: Figure 1.0 Packaging Description: EL ECT ROST AT IC SEN SIT IVE DEVICES DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S TNR D ATE PT NUMB ER PEEL STREN GTH MIN ___ __ ____ __ ___gms MAX ___ ___ ___ ___ _ gms Antistatic Cover Tape ESD Label SOIC-8 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or 177cm diameter reel. This and some other options are further described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. Static Dissipative Embossed Carrier Tape F63TNR Label Customized Label F852 NDS 9959 F852 NDS 9959 F852 NDS 9959 F852 NDS 9959 F852 NDS 9959 Pin 1 SOIC (8lds) Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Standard (no flow code) TNR 2,500 L86Z F011 D84Z Rail/Tube TNR TNR 95 4,000 500 13" Dia - 13" Dia 7" Dia 343x64x343 530x130x83 343x64x343 184x187x47 Max qty per Box 5,000 30,000 8,000 1,000 Weight per unit (gm) 0.0774 0.0774 0.0774 0.0774 Weight per Reel (kg) 0.6060 - 0.9696 0.1182 Reel Size Box Dimension (mm) SOIC-8 Unit Orientation Note/Comments 343mm x 342mm x 64mm Standard Intermediate box ESD Label F63TNR Label sample F63TNLabel F63TN Label LOT: CBVK741B019 QTY: 2500 FSID: FDS9953A SPEC: D/C1: D9842 D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: F ESD Label (F63TNR)3 SOIC(8lds) Tape Leader and Trailer Configuration: Figure 2.0 Carrier Tape Cover Tape Components Trailer Tape 640mm minimum or 80 empty pockets Leader Tape 1680mm minimum or 210 empty pockets July 1999, Rev. B SO-8 Tape and Reel Data and Package Dimensions, continued SOIC(8lds) Embossed Carrier Tape Configuration: Figure 3.0 P0 D0 T E1 F K0 Wc W E2 B0 Tc A0 D1 P1 User Direction of Feed Dimensions are in millimeter Pkg type A0 B0 SOIC(8lds) (12mm) 6.50 +/-0.10 5.30 +/-0.10 W 12.0 +/-0.3 D0 D1 E1 E2 1.55 +/-0.05 1.60 +/-0.10 1.75 +/-0.10 F 10.25 min 5.50 +/-0.05 P1 P0 8.0 +/-0.1 4.0 +/-0.1 K0 2.1 +/-0.10 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). T Wc 0.450 +/0.150 9.2 +/-0.3 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Side or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SOIC(8lds) Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7" Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 2.165 55 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 - 0.606 11.9 - 15.4 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 7.00 178 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 - 0.606 11.9 - 15.4 12mm 7" Dia 7.00 177.8 12mm 13" Dia 13.00 330 1998 Fairchild Semiconductor Corporation Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) July 1999, Rev. B SO-8 Tape and Reel Data and Package Dimensions, continued SOIC-8 (FS PKG Code S1) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0774 9 September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM UHCTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Product Folder - Fairchild P/N FDS5670 - 60V N-Channel PowerTrench MOSFET Parametric Search | Cross Reference Search | Buy Search Find Products Home >> Find products >> Products FDS5670 Related Links Analog and Mixed Signal Discrete Interface & Logic Microcontrollers Optoelectronics Power RF Power Markets and applications New products Product selection and parametric search Cross-reference search Obsolete product search 60V N-Channel PowerTrench MOSFET Request samples Technical Information Buy Products Support My Fairchild Global Fairchild How to order products Contents *General description *Features *Product status/pricing/packaging *Order Samples *Models *Qualification Support Datasheet Download this datasheet General description Company back to top Features 10 A, 60 V. RDS(ON) = 0.014 @ VGS = 10 V, RDS(ON) = 0.017 @ VGS = 6 V. Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. back to top http://www.fairchildsemi.com/pf/FD/FDS5670.html (1 of 3) [10/28/2004 6:09:16 PM] Support Sales support e-mail this datasheet This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Product Change Notices (PCNs) Quality and reliability Design center This page Print version This product Use in FETBench Analysis Product Folder - Fairchild P/N FDS5670 - 60V N-Channel PowerTrench MOSFET Product status/pricing/packaging Product FDS5670 FDS5670_NL Product status Lead Pricing* free Full Production Full Production $1.18 N/A Package type SO-8 SO-8 Leads 8 8 Packing method Package Marking Convention** TAPE REEL Line 1: $Y (Fairchild logo)&Z (Asm. Plant Code)&2 (Date Code)&T (Die Trace Code) Line 2: FDS Line 3: 5670 TAPE REEL Line 1: $Y (Fairchild logo)&Z (Asm. Plant Code)&2 (Date Code)&T (Die Trace Code) Line 2: FDS Line 3: 5670 * Fairchild 1,000 piece Budgetary Pricing ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples Indicates lead free product. For more information click here. Package marking information for product FDS5670 is available. Click here for more information . back to top Models Package & leads Condition Temperature range Software version Revision date Orcad 9.1 May 14, 2002 PSPICE SO-8-8 Electrical 25C to 125C back to top Qualification Support Click on a product for detailed qualification data Product FDS5670 FDS5670_NL http://www.fairchildsemi.com/pf/FD/FDS5670.html (2 of 3) [10/28/2004 6:09:16 PM] Product Folder - Fairchild P/N FDS5670 - 60V N-Channel PowerTrench MOSFET back to top Home | Find products | Technical information | Buy products | Support | Company | Contact us | Site index | Privacy policy | Site Terms & Conditions (c) Copyright 2004 Fairchild Semiconductor http://www.fairchildsemi.com/pf/FD/FDS5670.html (3 of 3) [10/28/2004 6:09:16 PM]