sEMIKRON Vasm | VarM ( ev) Itams (maximum values for continuous operation) Vorm | \ dt Jor 110A | 135A | 175A lTav (sin. 180; Tease = 80 C) Vv Vv V/us 70A | 86 A 110A | 500 400 200 SKT 55/04 C SKT 80/04 C SKT 100/04 C 700 600 200 SKT55/06C* | SKT80/06C* | SKT 100/06 C* 900 800 200 SKT 55/08 C | SKT 80/08 C SKT 100/08 C 1300 | 1200 200 SKT55/12C* SKT80/12C* | SKT 100/12 C* 1000 SKT55/12E SKT 80/12E SKT 100/12E 1500 | 1400 1000 SKT55/14E SKT80/14E SKT 100/14E 1700 | 1600 ; 1000 SKT55/16E* | SKT80/16E* SKT 100/16 E* Symbol . Conditions SKT 55 SKT 80 SKT 100 ltav sin. 180; (Tcase = . .. C) 55A(92C) | 80A(85 C)100 A (85C Itsm Ty = 25C 1300 A 1700 A 2000 A Ty = 130C 1100 A 1500 A 1750 A mt Ty = 25 8500 A2s 14500 As| 20000 A2s Ty = 130C 6000 A?s | 11000 As| 15000 As tgd Ty = 25C: Ie = 1A; dig/dt = 1A/ps typ. 1 Hs tor Vp = 0,67-Vorm typ. 2 us (di/dt)cr) f = 50... 60Hz 50A/us lH Ty = 25C; typ./max. 150 mA/250 mA IL Ty = 25C; typ./max. 300 mA/600 mA tg Ty = 130C; typ. 100 us Vr Ty = 25C; (r=..);max) 18V00 | 25V | 1,75V (200 A) (300 A) (300 A) Vito) = [Ty = 190C 09V 12V 1,0V IT Ty = 130C V V 4mQ 4mQ 24mQ _ on-Vop = Vorm: Ippo. IRp [Ty = 130 Cap = VaRM 25 mA 30 mA 30 mA Ver Ty = 25C 3V lat Ty = 25C 150 mA Vap Ty = 130C 0,25 V lap Ty = 180C 10mA Rthie cont. 0,40 C/W 0,25 C/W sin. 180/rec. 120 10,47/0,53 C/W 0,28/0,31 C/W Rtheh 0,08 C/W Tyj -40... +130C Tstg -55... + 150C M SI units 10 Nm US units 90 Ib. in. a 5-9,81 m/s" w 65g | 80g Case B5 * Available with UNF thread Thyristors SKT 55 SKT 80 SKT 100 Features e@ Hermetic metal cases with ceramic insulators @ Threaded studs ISO M12 or UNF 1/2-20 @ Interchangeable with international standard cases Typical Applications e DC motor control (e. g. for machine tools) Controlled rectifiers (e. g. for battery charging) @ AC controllers (e. g. for temperature control) by SEMIKRON B3-17150 Rthja=,0,8 0,7. 0,6. : XN sin, 180 O98 120 1,0 1A 100 2 14 | 16 | 18 2 50 5 4 C/W Fav oO 0 Itay 25 50 A O Tamb 50 100 c 150 Fig. 1 a Power dissipation vs. on-state current and ambient temperature we XN WY Yrs 200 LR thja = \. \das\ \ bee Ww 0,6 |-0,5 -64 xj 033 0,25 Cjw a DO, of OK Poy | 150 AA\\ ot are 150 i \ a\) : I . i | ! : Yo | bod os 100 : | | 100 iN ! - | i boy i | - r i A bor 50 < . 1 [50 | . _ , OChW [aS = | Prav a : ot ! +] Pray Go = i rs J wee 1 1 9 bay 20 40 60 80 A 9 Tamb 50 100 C 5e Fig. 1b Power dissipation vs. on-state current and ambient temperature 20000 pps : \ | : h 200 we | : Rthia = \ \dss w | 1 ya = ' : SKT 100 | J 06! 65 - 04 ib pe rot at. | -- : | 71 150; ! : 150 roe | 8 : 1 | | pot 100| ; 100 pot | \ ap [oo 50} 50 | | | OC/W- Pray | bo! | I j | ww O tray 20 40 60 80 100 120 A 140 OTamb 50 100 oC 480 Fig. 1c Power dissipation vs. on-state current and ambient temperature B3-18 by SEMIKROH100 --con. SK T 55 80 60 90 90 60 40 60 30 =30 15 20 = 15 7 Og] Sg| - "Tay Lo O Tease 50 100 c (150 Fig. 2a Rated on-state current vs. case temperature 150 SKT 100 50 "Tay 0 Tease 50 100 C 160 Fig. 2c Rated on-state current vs. case temperature Os Oo, Ll SKT 55 Zthjh 04 Zthjc Zith)p=Zithit + Zith}z 0,3 at 8 Zithiz OC w| 5 360] 180 | 0,07 120 | 0,09 of 90) 0,11 60| 0,16 30 | 0,22 15 | 0,26 | 0.2 Zith)t 0 1073 10-2 10! 10 101 s 102 Fig. 4a Transient thermal impedance vs. time sEMIKRON ent | fo! SKT SO. | Ls | tro 60 40 20 | Nay : oul... | i 0 Tcase 50 100 150 Fig. 2b Rated on-state current vs. case temperature 1000 + Sy SKTS55 Ite 600 TM SKT SO soos aa 400 SKT 100 2004 Tyj= 130 C 100A 200 50A I 20A 100 60 40 20 Qe tol gi, 1- a 2 4 6 10 20 40 60Ajs 100 Fig. 3 Recovered charge vs. current decrease 0,4 ae SKT 80 | | SKT100 0.3 Zthip=Zitht + Zithiz Zthic 0.2 8 | Zithy 2 PCW oe _. in { fec. 360) : 0 OA 180| 0,03 | 0,04 120) 0,04 ; 0,06 90] 0.05 | 0.075 60] 0,07 | O10 z 30| O11 | 013 (rh)t 15| 0,145| 0,145 Q 1073 + 10-2 10-1 10 401 s 102 Fig.4b Transient thermal impedance vs. time by SEMIKRON B3-19OF poe pepe _ a a Cr TL w % Rthea + L NX _ | K-12] 310 &cjw | K1J-M12] 120C/W ~ | +A K1- M12 | 0.40C/W6 mys | 06 N Pttttt dd , ~ . Rthj = 0,40 C/W IN - | [Robie] one | NO El M | Pe 4-4 0,5 |- | 5 {_ : ~ sin. |_| | | SKT 55. fe we LLL 0,4 0 @ 30 602 90 120 150 180 Fig. 5 a Thermal resistance vs. conduction angle 300 A 200 Tyj = 130 25 130 25 OC 7 iy 0 Oo YT 0,5 1 45 2 VV 2,5 Fig. 6 a On-state characteristics 400 SKT 100 | | 300 J+- . - -F-130 200 Wj = 130 25 ff 25C 100 iT Oo wy 05 1 52s Fig. 6 c On-state characteristics oe ; Lh. rr |. LL - thea + Ww \ ao 0.38 K3 -M12 | 310 C]jw i , \ KI1-M12 | 1.20C/W L+- + K1,l- M12 | 040C/W6 m/s aN K0,55- M12} 0,659C/W 0,36 \ TT KO,55- M12] 0,25CIW~ 6 mis] Po}eoretot dot YO [Rthj = 0,25 C/W | 0,34 | +--4 \ [Rehie] oon - Ba, fee N 0,32 N NY [T Ms trec. 0,30 aon 8 a J ~~! [+ SKT 80 a 0,28|+- SKT 100 Rthjc K+ | {| | | | | 028 Iti lt | | 0 8 30 60 90 120 =6150% += 180 Fig. 5b Thermal resistance vs. conduction angle 400 A SKT 80 ! 300 200 100 iT %> (OS 1 1,5 2 Vv 25 Fig. 6 b On-state characteristics 500 Ww rec, 60 rec.120 180 400 300 200 100 SKT 55 Fray %9 Itav 50 100 150 A 200 Fig. 7 a Power dissipation vs. on-state current B3-20 by SEMIKRONSEMIKRON 1000 1200 W'SKT100 800 1000 800 600 600 400 400 200 200 Play Pray O tay 100 200 "A 300 Oo Iggy 100 200 300 A 400 Fig. 7 b Power dissipation vs. on-state current Fig. 7c Power dissipation vs. on-state current 'tlov) Irs 1,8 16 0,8 06 04 10 + 10! 102 ms 103 Fig. 8 Surge overload current vs. time 2--SKT Vv so i ) N WA 109 oan 2 Vo <1 wWig2 345 2345 0 10 2345 Ato? Fig. 9 Gate trigger characteristics by SEMIKRON B3-21SKT 55 SKT 80 SKT 100 Case BS teC-Punl. 491-2. {A 12 MA,A12U} DIN 41892: (204 B 3) BS 3934: SO ~30C JEDEC: TO - 209 (TO- gay) |_swae M12 a 1 (a/2-20 UNF 2A) 1) modified yersion. In the USA and Canada these types are available with the original TO-209 (TO-94) dimensions. 0-208 AD (10-83) with flag terminals | is also available. Dimensions inmm Cathode terminal {red sleeve) : Anode terminal Gate terminal (yellow sleeve) Auxiliary cathode terminal (red sleeve) C: A G Hi aK: KRON B3-22