inters;| Data Sheet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25C and 150C. The IGBT used is the development type TA49343. The diode used in anti-parallel is the development type TA49373. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49345. Ordering Information PART NUMBER PACKAGE BRAND HGTG30N60A4D TO-247 30N60A4D NOTE: When ordering, use the entire part number. Symbol HGTG30N60A4D January 2000 File Number 4830 Features * >100kHz Operation At 390V, 30A * 200kHz Operation At 390V, 18A * 600V Switching SOA Capability * Typical Fall Time................. 60ns at Ty = 125C * Low Conduction Loss * Temperature Compensating SABER Model www.intersil.com Packaging JEDEC STYLE T0-247 COLLECTOR (FLANGE) INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 4-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 2000HGTG30N60A4D Absolute Maximum Ratings T = 25C, Unless Otherwise Specitied Collector to Emitter Voliage 0.2... eee BVcEsS Collector Current Continuous ALT = 25C eee een eee n nee en nes loos ALT = 110C een nent nnn lc110 Collector Current Pulsed (Note 1)... 0... eee lom Gate to Emitter Voltage Continuous... 2... eee VGES Gate to Emitter Voltage Pulsed ....... 0... 00s VGEM Switching Safe Operating Area at Ty = 150C (Figure 2) .............0..000 000. SSOA Power Dissipation Total at To = 25C 006 nent en nas Pp Power Dissipation Derating TG > 25C 00 nett ees Operating and Storage Junction Temperature Range.....................00. Ty, Tsta Maximum Temperature for Soldering... 1.0.0.0... 0 ccc eee ee TL HGTG30N60A4D, 600 75 60 240 +20 +30 150A at 600V 463 3.7 -55 to 150 260 UNITS << PP > Ww wc C C CAUTION: Siresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. Electrical Specifications 1, = 25C, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVcEs Ic = 250A, Vag = OV 600 - - Vv Collector to Emitter Leakage Current IcES VcE = 600V Ty = 25C - - 250 pA Ty = 125C - - 2.8 mA Collector to Emitter Saturation Voltage VCE(SAT) Iq = 30A, Ty =25C - 1.8 2.6 Vv Vae = 15V Ty = 125C - 1.6 2.0 v Gate to Emitter Threshold Voltage VG@E(TH) Io = 250uA, Vor = 600V 4.5 5.2 7.0 v Gate to Emitter Leakage Current IaEs VGE = +20V - - +250 nA Switching SOA SSOA Ty = 150C, Re = 3, Veg = 15V, 150 - - A L= 100uH, VcE = 600V Gate to Emitter Plateau Voltage VGEP Ic = 30A, Vcg = 300V - 8.5 - Vv On-State Gate Charge Qg(ONn) I = 30A, Voge = 15V - 225 270 nG VCE = S00V Va@e = 20V - 300 360 nc Current Turn-On Delay Time ta(ON)| IGBT and Diode at Ty = 25C, - 25 - ns Current Rise Time tr ICE = 0A, - 12 - ns Vcg = 390V, Current Turn-Off Delay Time td(OFF)I Vokg = 15V, - 150 - ns Current Fall Time te Re = 3, - 38 - ns Turn-On E N E L = 200u1H, r urn-On Energy (Note 2) ON1 Test Circuit (Figure 24) - 280 - be Turn-On Energy (Note 2) Eon2 - 600 - iJ Turn-Off Energy (Note 3) Eorr - 240 350 iJ Current Turn-On Delay Time ta(ON)! IGBT and Diode at Ty = 125C, - 24 - ns Current Rise Time tr ICE = 0A, - 11 - ns Vc = 390V, Vee = 15V, Current Turn-Off Delay Time td(OFF)I Rg = 3a, - 180 200 ns Current Fall Time tr L = 200)1H, - 58 70 ns Test Circuit (Figure 24) Turn-On Energy (Note 2) Eon1 - 280 - iJ Turn-On Energy (Note 2) Eon2 - 1000 1200 iJ Turn-Off Energy (Note 3) Eorr - 450 750 pd Diode Forward Voltage VeEc lec = 30A - 2.2 2.5 Vv Diode Reverse Recovery Time ter lec = 30A, dlec/dt = 200A/us - 40 55 ns lec = 1A, dlec/dt = 200A/us - 30 42 ns 2 intersilHGTG30N60A4D Electrical Specifications 1, = 25C, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Thermal Resistance Junction To Case Resc IGBT - - 0.27 C/W Diode - - 0.65 cw NOTES: 2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. Eqn is the turn-on loss of the IGBT only. Egno is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same Ty as the IGBT. The diode type is specified in Figure 24. 3. Turn-Off Energy Loss (Egfr) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (If = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Typical Performance CurveS unless Otherwise Specified <= = ~ 200 r r + + : z Vag = 15V & Ty = 150C, Rg = 30, Veg = 15V, L = 500uH oc i z Fa 150 oc 2 wi 5 Fs E = 5 Wi 100 z p oe 0 Q oO 8 ty 50 u J 3 = o 8 oo 25 50 75 100 125 150 ~ 0 100 200 300 400 500 600 700 Tc, CASE TEMPERATURE (C) VcE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA TEMPERATURE _ 500 Tm @ 18 1 1 1 900 = 8g Te Nae a VcE = 390V, Rg = 39, Ty = 125C c % oc 15 = = 500 75C = 16 \ B00 if o Qa o 2 Zz 14 7oo 2 2 ~ FE E i 2 \ lsc 5 ww ~= 12 ra 600 uw fax1 = 9.05 / (tq(oFF) + taoNnyD = o G _ yY E oO Z 100} fmax2= (Pp - Pc)/ (Eon2 + Eorr) E 10 500 & 5 | Pg = CONDUCTION DISSIPATION \ 3 N o ae = (DUTY FACTOR = 50%) AN 5 8 400 5 a | Rac = 0.27C/W, SEE NOTES Ma NL tse x Yo ra < % rT TTT Q 6 300 & = Ty = 125C, Rg = 30, L = 200n1H, Vg = 390V na 3 30 Poop ! 9 4 200 3 10 30 60 & 10 11 12 13 14 15 Ice, COLLECTOR TO EMITTER CURRENT (A) Vae; GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME intersilHGTG30N60A4D Typical Performance Curves unless Otherwise Specified (Continued) 50 PULSE DURATION = 250s | TH eR Ty = 150C f Ty = 25C DUTY CYCLE < 0.5%, Vgg = 12V | Ice, COLLECTOR TO EMITTER CURRENT (A) , | 0 0.5 1.0 1.5 2.0 2.5 Voce, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 3500 Rg = 3Q, L = 200)1H, Voge = 390V > 000 | | | / | | | / 2500 | Tu = 125C, Vag = \ Vee = 15V 2000 a 1500 \A Ss om Ea A ag A Eon, TURN-ON ENERGY LOSS (j1J) _\ Ty = 25C, Voge = 12V, Vee = 15V | | 0 0 10 20 30 40 0 60 Ice, COLLECTOR TO EMITTER CURRENT (A) a FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 34 > Rg = 30, L = 2001H, VcE = 390V E 39 | Ty = 28C, Ty = 125C, Vg = 12V |e ee Ww N S N a F 30 oe > < a i 28 zZ een oe P 24 TH - So .. ee > \ So 22 Ty = 25C, Ty = 125C, Vgg = 15V | ale | | 20 0 10 20 30 40 50 60 Ice, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 50 PULSE DURATION = 250us 40 | 30 / 20 / Ty = 125C / 0 L\ Ty = 150C PT, = 25C DUTY CYCLE < 0.5%, Vgg = 15V | 0 0.5 1.0 1.5 2.0 2.5 Voce, COLLECTOR TO EMITTER VOLTAGE (V) Ice, COLLECTOR TO EMITTER CURRENT (A) FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 1400 T T T Rg =30,L= 200uH, VcE = 390V 1200 J | 1000 i | 800 Ty = 125C, Vg a F=12V0R 15V_ 600 Eorr; TURN-OFF ENERGY LOSS (J) 400 A 200 Ty = 25C, Vge = 12V OR 15V _ | l 0 10 20 30 40 50 60 Ice, COLLECTOR TO EMITTER CURRENT (A) FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 100 T T T Rg = 3Q, L = 200pH, Vo = 390V 80 t | Ty = 125C, Voge = 15V, Voge = 12V @ Y c Ww 60 WA = \ 7 ke B Ty = 25C, Voge = 12V ps / i 40 a V4 20 we A Ty = 25C, Vge = 15V 0 0 10 20 30 40 50 60 Ice, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 4 intersilHGTG30N60A4D Typical Performance Curves unless Otherwise Specified (Continued) 220 Rg = 390, L= 200u1H, VcE = 390V 200 3 Voge = 12V, Vgg = 15V, Ty = 125C 180 160 140 ta(OFF)l, TURN-OFF DELAY TIME (ns) Vok = 12V, Veg = 15V, Ty = 25C 120 0 10 20 30 40 50 60 Ice, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 350 T T T DUTY CYCLE < 0.5%, Vog = 10V y 300 PULSE DURATION = 250us I 250 wes YY 200 LL / Ty = 125C SY 0 > Ty = -55C 100 4 A LAL 0 ee 6 7 8 9 10 11 12 Vge; GATE TO EMITTER VOLTAGE (V) Ice, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13. TRANSFER CHARACTERISTIC Rg = 39, L= 200u1H, VoE = 390V, VGE = 15V EtTotat = Eon2 + Eorr Ice = 30A log = 15A EToTaL: TOTAL SWITCHING ENERGY LOSS (mJ) 25 50 75 100 125 150 Tc, CASE TEMPERATURE (C) FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE 70 T T T Rg = 30, L = 200u1H, Vog = 390V 60 | "| Ty = 125C, Vgg = 12V OR 15V enn 50 40 _ Z| Ty = 25C, Vgg = 12V OR 15V 30 /1 20 0 10 20 30 40 50 60 Ice, COLLECTOR TO EMITTER CURRENT (A) tj, FALL TIME (ns) FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT 15.0 T T T IG@(REF) = 1mA, RL = 159, Ty = 25C WA 12.5 | | I Vor = 600V | \ Voce = 400V 10.0 7.5 f [ VcE = 200V 5.0 / 2.5 Vge, GATE TO EMITTER VOLTAGE (V) 0 50 100 150 200 250 Qg, GATE CHARGE (nC) FIGURE 14. GATE CHARGE WAVEFORMS Ty = 125C, L = 200uH, Vog = 390V, Vgg = 15V EToTAL = Eon2 + Eorr Ick = 15A 3 10 100 300 Rg, GATE RESISTANCE (Q) EToTaL; TOTAL SWITCHING ENERGY LOSS (mJ) FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE 5 intersilHGTG30N60A4D Typical Performance Curves unless Otherwise Specified (Continued) 10 FREQUENCY = 1MHz rc 8 & Ww g 4 6 Ec c S IES = 4 o oO 2 Na Cc RES EE 0 0 5 10 15 20 25 Voce, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE 35 T T DUTY CYCLE < 0.5%, / / 39 | PULSE DURATION = 2501s = J if a 25 x 125C / [2c 2 o 20 y 2 | $ 15 S / J o 10 V4 3 Wa Lu = 5 oO: 0 0.5 1.0 15 2.0 2.5 Vec; FORWARD VOLTAGE (V) FIGURE 19. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP lec = 30A, VcE = 390V 125C th 25C ty trr,; RECOVERY TIMES (ns) 25C th 0 200 8300 400 500 600 700 800 900 81000 dlec/dt, RATE OF CHANGE OF CURRENT (A/us) FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF CURRENT DUTY CYCLE < 0.5%, Vgg = 15V PULSE DURATION = 2501s, Ty = 25C Voge, COLLECTOR TO EMITTER VOLTAGE (V) 9 10 11 12 13 14 15 16 Voge, GATE TO EMITTER VOLTAGE (V) FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs GATE TO EMITTER VOLTAGE dig/dt = 200A/us try, RECOVERY TIMES (ns) ta 25C th 0 5 10 15 20 25 30 lec, FORWARD CURRENT (A) FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT 1400 Voce = 390V 125C, IEc = 30A = = o nN So So o o 125C, IEG = 15A 800 600 25C, lec = 30A 400 200 25C, lec = 15A Q,;; REVERSE RECOVERY CHARGE (nC) 0 200 300 400 500 600 700 #800 900 1000 dlec/dt, RATE OF CHANGE OF CURRENT (A/us) FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF CURRENT 6 intersilHGTG30N60A4D Typical Performance Curves unless Otherwise Specified (Continued) Vw lt 1071 Pp Se DUTY FACTOR, D = ty / ty PEAK Ty = (Pp X Zoyc X Rose) + Tc SINGLE PULSE 10? A 3 2 1 0 1 10 10 10 10 10 10 10 ty, RECTANGULAR PULSE DURATION (s) Zoyc; NORMALIZED THERMAL RESPONSE FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms HGTP30N60A4D DIODE TA49373 10% Eonz2 L = 200uH DUT + = Vpp = 390V ty ta(on)I FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 25. SWITCHING TEST WAVEFORMS 7 intersilHGTG30N60A4D Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate- insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handlers body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ECCOSORBD LD26 or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VgenM. Exceeding the rated Vee can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open- circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (Ice) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8,9 and 11. The operating frequency plot (Figure 3) of a typical device shows fax OF fywaxe; Whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fax is defined by fyax1 = 0.05/(tq(OFF)I+ td(ON)))- Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. tq(QFF)| and tg(Qn)| are defined in Figure 25. Device turn-off delay can establish an additional frequency limiting condition for an application other than Ty. tg(OFF)I is important when controlling output ripple under a lightly loaded condition. fAxa is defined by fyyaxe = (Pp - Pc)(Eorr + Eong). The allowable dissipation (Pp) is defined by Pp = (Ty - Tc)/Regc. The sum of device switching and conduction losses must not exceed Pp. A 50% duty factor was used (Figure 3) and the conduction losses (Pc) are approximated by Po = (VcE x Ice)/2. Eone and Eorr are defined in the switching waveforms shown in Figure 25. Egonga is the integral of the instantaneous power loss (Ice X Vce) during turn-on and Eorr is the integral of the instantaneous power loss (Ice X Vce) during turn-off. All tail losses are included in the calculation for Eqrr; i-e., the collector current equals zero (Ice = 0). 8 intersilHGTG30N60A4D TO-247 3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE j<_ = >} ae A bg TERM. 4 @s 1 @P 7 r = > -><____ 0 ___ << LEAD1i - LEAD2 - LEAD3 - TERM.4 - Tt) (Lea? HX Cc >| l 3 2V 4 alte BACK VIEW GATE COLLECTOR EMITTER COLLECTOR INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES A 0.180 0.190 4.58 4.82 - b 0.046 0.051 1.17 1.29 2,3 b+ 0.060 0.070 1.53 1.77 1,2 bo 0.095 0.105 2.42 2.66 1,2 c 0.020 0.026 0.51 0.66 1,2,3 0.800 0.820 20.32 20.82 - E 0.605 0.625 15.37 15.87 - 0.219 TYP 5.56 TYP 4 e; 0.438 BSC 11.12 BSC 4 Jy 0.090 0.105 2.29 2.66 5 L 0.620 0.640 15.75 16.25 - Ly 0.145 0.155 3.69 3.93 1 @P 0.138 0.144 3.51 3.65 - Q 0.210 0.220 5.34 5.58 - OR 0.195 0.205 4.96 5.20 - @S 0.260 0.270 6.61 6.85 - NOTES: 1. Lead dimension and finish uncontrolled in L4. . Lead dimension (without solder). 2 3. Add typically 0.002 inches (0.05mm) for solder coating. 4 . Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 5. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 9 intersil