CPH5901
No.8278-1/6
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8278A
CPH5901 TR : NPN Epitaxial Planar Silicon Transistor
FET : N-Channel Silicon Junction FET
High-Frequency Amplifier. AM Amplifier.
Low-Frequency Amplifier Applications
Features
•Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
efficiency greatly.
•The CPH5901 is formed with two chips, being equivalent to the 2SK932 and the other the 2SC4639, placed in one
package.
•Common drain and emitter.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
[FET]
Drain-to-Source Voltage VDSX 15 V
Gate-to-Drain Voltage VGDS --15 V
Gate Current IG10 mA
Drain Current ID50 mA
Allowable Power Dissipation PDMounted on a ceramic board (600mm2✕0.8mm) 350 mW
[TR]
Collector-to-Base Voltage VCBO 55 V
Collector-to-Emitter Voltage VCEO 50 V
Emitter-to-Base Voltage VEBO 6V
Collector Current IC150 mA
Collector Current (Pulse) ICP 300 mA
Base Current IB30 mA
Collector Dissipation PCMounted on a ceramic board (600mm2✕0.8mm) 350 mW
[Common Ratings]
Total Dissipation PTMounted on a ceramic board (600mm2✕0.8mm) 500 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Marking : 1A
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
62005AC MS IM TB-00001557 / 32505AC TS IM TA-3705
CPH5901
No.8278-2/6
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
[FET]
Gate-to-Drain Breakdown Voltage V(BR)GDS IG=--10μA, VDS=0V --15 V
Gate Cutoff Current IGSS VGS=--10V, VDS=0V --1.0 nA
Cutoff Voltage VGS(off) VDS=5V, ID=100μA --0.2 --0.6 --1.4 V
Drain Current IDSS VDS=5V, VGS=0V 6.0* 20.0* mA
Forward T ransfer Admittance ⏐yfs⏐VDS=5V, VGS=0V, f=1kHz 25 50 mS
Input Capacitance Ciss VDS=5V, VGS=0V, f=1MHz 10 pF
Reverse T ransfer Capacitance Crss VDS=5V, VGS=0V, f=1MHz 3.0 pF
Noise Figure NF VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz 1.5 dB
[TR]
Collector Cutoff Current ICBO VCB=35V, IE=0A 0.1 μA
Emitter Cutoff Current IEBO VEB=4V, IC=0A 0.1 μA
DC Current Gain hFE VCE=6V, IC=1mA 135 400
Gain-Bandwidth Product fTVCE=6V, IC=10mA 200 MHz
Output Capacitance Cob VCB=6V, f=1MHz 1.7 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=50mA, IB=5mA 0.08 0.4 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=50mA, IB=5mA 0.8 1.0 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0A 55 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0A 6 V
Turn-ON Time ton See specified Test Circuit. 0.15 μs
Storage T ime tstg See specified Test Circuit. 0.75 μs
Fall T ime tfSee specified Test Circuit. 0.20 μs
* : The CPH5901 is classified by IDSS as follows : (unit : mA)
Rank FG
IDSS 6.0 to 12.0 10.0 to 20.0
Package Dimensions Electrical Connection
unit : mm
7017-007
Switching Time Test Circuit
543
12Top view
1 : Collector
2 : Gate
3 : Source
4 : Emitter / Drain
5 : Base
2.9
0.95
0.05
12
345
0.2
0.7 0.9 2.8
1.6
0.6 0.6
0.2
0.4 0.15
1 : Collector
2 : Gate
3 : Source
4 : Emitter/Drain
5 : Base
SANYO : CPH5
++
50Ω
INPUT OUTPUT
VRRB
VCC=20V
220μF 470μF
VBE= --5V
PW=20μsIB1
IB2
D.C.≤1%
10IB1= --10IB2= IC=10mA
RL
CPH5901
No.8278-3/6
ID -- VGS
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- mA
ID -- VDS
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- mA
ID -- VDS
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- mA
[FET]
[FET]
[FET]
VGS(off) -- IDSS
Drain Current, IDSS -- mA
[FET]
Cutoff Voltage, VGS(off) -- V
⏐
y
fs⏐ -- ID
Drain Current, ID -- mA
Forward T ransfer Admittance, ⏐
y
fs⏐ -- mS
[FET] ⏐
y
fs⏐ -- IDSS
Drain Current, IDSS -- mA
Forward T ransfer Admittance, ⏐
y
fs⏐ -- mS
[FET]
Drain-to-Source Voltage, VDS -- V
Input Capacitance, Ciss -- pF
Ciss -- VDS Crss -- VDS
Drain-to-Source Voltage, VDS -- V
Reverse Transfer Capacitance, Crss -- pF
[FET] [FET]
ITR10329
0 0.4 0.8 1.2 1.6 2.0
0
2
4
6
8
10
12
14
16
VGS=0V
--0.1V
--0.2V
--0.3V
--0.4V
--0.5V
--0.6V
VGS=0V
--0.1V
--0.2V
--0.3V
--0.4V
ITR10330
0246810
0
4
8
12
16
20
--0.5V
--0.6V
IDSS=6mA
20mA
10mA
ITR10333 ITR10334
VDS=5V
f=1kHz
VGS=0V
f=1MHz VGS=0V
f=1MHz
1.0 5327532 10
5
3
3
2
10
7
100
7
5
ITR10335
VDS=5V
VGS=0V
f=1kHz
533275 10
5
3
2
100
10
7
ITR10336
1.0 23 3557710 2
2
7
5
3
3
10
2
1.0 1.0 23 57710 235
1.0
2
7
7
5
5
3
10
ITR10331
--1.2 --1.0 --0.8 --0.6 --0.4 --0.2 00
10
20
30
40
IDSS=20mA
15mA
10mA
6mA
57 2 335
10
7
--1.0
--0.1
5
3
2
2
VDS=5V
ID=100
μ
A
ITR10332
VDS=5V
CPH5901
No.8278-4/6
PD -- Ta
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- mW
[FET]
ID=1mA
3mA
Frequency, f -- Hz
NF -- f
Noise Figure, NF -- dB
10 100 1k
51M
25225
10k 25
100k 25
10 100 1k
51M
25225
10k 25
100k 25 0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14 VDS=5V
Rg=1kΩ
Frequency, f -- Hz
NF -- f
Noise Figure, NF -- dB
VDS=5V
ID=10mA
Rg=500Ω
1k
Ω
10k
Ω
ITR10337 ITR10338
10mA
50
30
20
40
10
00 0.4 1.00.80.60.2
50μA
100μA
150μA
200μA
250μA
300
μ
A
350μA
400μA
450μA
500μA
ITR10340
020 504010 30
ITR10341
12
10
6
4
8
2
0
Ta=75°C
--25°C
100
3
2
7
5
1000
2
7
5
3
0.1 325
1.0 32325
100 325 10
25
°
C
VCE=6V
ITR10343
Ta=75°C
--25°C
160
120
140
20
80
100
40
60
0
VCE=6V
25
°
C
0 0.2 0.4 0.80.6 1.0 1.41.2
ITR10342
IB=0μA
10μA
15μA
20μA
25μA
30μA
35μA
40μA
45μA
50μA
5μA
IB=0μA
0 20 40 60 80 100 120 140 160
0
100
50
200
300
150
250
350
400
IT09862
[FET] [FET]
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
[TR]
Collector Current, IC -- mA
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
[TR]
Collector Current, IC -- mA
[TR]IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
[TR]
hFE -- IC
Collector Current, IC -- mA
DC Current Gain, hFE
Mounted on a ceramic board (600mm2✕0.8mm)
CPH5901
No.8278-5/6
[TR]
fT -- IC
Collector Current, IC -- mA
Gain-Bandwidth Product, fT -- MHz
[TR]
Cib -- VEB
Input Capacitance, Cib -- pF
Emitter-to-Base Voltage, VEB -- V [TR]
Collector Current, IC -- mA
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
[TR]
Collector Current, IC -- mA
VBE(sat) -- IC
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector Dissipation, PC -- mW
Ambient Temperature, Ta -- °C
PC -- Ta [TR]
[TR]
Cob -- VCB
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
3
100
2
5
7
3
2
5
7
1.0 10
52732 100
5732
3
1.0
10
2
3
2
5
5
7
1.0 10
57 5732
ITR10344 ITR10345
VCE=6V f=1MHz
0
400
300
200
50
100
350
250
150
2006040 80 100 140120 160
IT09863
1.0 723 5 72235
10 100
5
3
1.0
10
7
5
3
2
7
IC / IB=10
ITR10348
75°
C
Ta= --25
°C
25
°
C
3
10
2
3
2
5
7
1.0
5
7
1.0 10
5757 32100
5732
ITR10346
f=1MHz
1.0 723 5 72235
10 100
5
3
2
0.1
1.0
7
5
3
2
3
2
7
IC / IB=10
ITR10347
25
°
C
Ta=75
°
C
--25
°
C
Mounted on a ceramic board (600mm2✕0.8mm)
CPH5901
No.8278-6/6
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2005. Specifications and information herein are subject
to change without notice.
PS
