BC847S BC847S E2 B2 C1 C2 SC70-6 Mark: 1C B1 pin #1 E1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. NPN Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 200 mA. Sourced from Process 07. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCES Collector-Base Voltage 50 V VCBO Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C 4 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient 2001 Fairchild Semiconductor Corporation Max Units BC847S 300 2.4 415 mW mW/C C/W Rev.A1 (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 45 V V(BR)CES Collector-Base Breakdown Voltage IC = 10 A, IE = 0 50 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 A, IE = 0 50 V V(BR)EBO Emitter-Base Breakdown Voltage 6.0 V ICBO Collector-Cutoff Current IE = 10 A, IC = 0 VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150C 15 5.0 nA A ON CHARACTERISTICS hFE DC Current Gain IC = 2.0 mA, VCE = 5.0 V VCE(sat) Collector-Emitter Saturation Voltage VBE(on) Base-Emitter ON Voltage IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5.0 mA IC = 2.0 mA, VCE = 5.0 V IC = 10 mA, VCE = 5.0 V 110 630 0.25 0.65 0.7 0.77 0.58 V V V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cobo Output Capacitance IC = 20 mA, VCE = 5.0, f = 100 mHz VCB = 10 V, f = 1.0 MHz 200 MHz 2.0 pF Typical Pulsed Current Gain vs Collector Current 1200 1000 V CE = 5.0 V 125 C 800 600 25 C 400 - 40 C 200 0 0.01 0.03 0.1 0.3 1 3 10 30 I C - COLLECTOR CURRENT (mA) 100 VCESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.3 0.25 = 10 0.2 125 C 0.15 0.1 0.05 0.1 25 C - 40 C 1 10 I C - COLLECTOR CURRENT (mA) 100 BC847S NPN Multi-Chip General Purpose Amplifier (continued) VBESAT - COLLECTOR-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 - 40 C 0.8 25 C 0.6 125 C 0.4 = 10 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 VBEON- BASE-EMITTER ON VOLTAGE (V) Typical Characteristics Base-Emitter ON Voltage vs Collector Current 1 - 40 C 0.8 25 C 0.6 125 C 0.4 V CE = 5.0 V 0.2 0.1 CAPACITANCE (pF) 1 150 10 175 MHz 5 3 2 1 0.1 4 3 C te 2 150 MHz 125 MHz 100 MHz 75 MHz 1 10 I C - COLLECTOR CURRENT (mA) 100 4 C ob 1 0 50 75 100 125 TA - AMBIE NT TEMP ERATURE ( C) CHARAC TERIS TICS R ELATI VE TO VALUE AT T A = 25 C I CBO - COLLE CTOR CURRENT (nA) f = 1.0 MHz VCB = 45V 7 40 5 10 Contours of Constant Gain Bandwidth Product (f T ) V CE - COLLECTOR VOLTAGE (V) 1 10 I C - COLLECTOR CURRENT (mA) Input and Output Capacitance vs Reverse Bias Voltage Collector-Cutoff Current vs Ambient Temperature 0.1 25 BC847S NPN Multi-Chip General Purpose Amplifier 0 4 8 12 16 REVERSE BIAS VOLTAGE (V) 20 Normalized Collect or-Cutoff Current vs Ambient Temperature 1000 100 10 1 25 50 75 100 125 T A - AMBIE NT TEMP ERATURE ( C) 150 (continued) Typical Characteristics (continued) Noise Figure vs Frequency Wideband Noise Frequency vs Source Resistance I C = 200 A, R S = 10 k 5 V CE = 5.0 V NF - NOISE FIGURE (dB) 8 I C = 100 A, R S = 10 k 6 I C = 1.0 mA, R S = 500 4 I C = 1.0 mA, R S = 5.0 k 2 V CE = 5.0V 0 0.0001 0.001 0.01 0.1 1 f - FREQUENCY (MHz) 10 100 4 BANDWIDTH = 15.7 kHz I C = 100 A 3 I C = 30 A 2 1 0 1,000 I C = 10 A 2,000 5,000 500 400 SC70-6 300 200 100 0 0 10,000 20,000 R S - SOURCE RESISTANCE ( ) Power Dissipation vs Ambient Temperature P D - POWER DISSIPATION (mW) NF - NOISE FIGURE (dB) 10 25 50 75 100 TEMPERATURE ( C) 125 150 50,000 100,000 BC847S NPN Multi-Chip General Purpose Amplifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2001 Fairchild Semiconductor Corporation Rev. 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