VARACTOR SELECTOR GUIDE Series Capacitance Qa Max Working Voltage Leakage Current bow Comments 1-100pf | >100pf | 7-50 0-150 >150 10-50 | 50-100 | >100 <10nA | <1.0,A CV830- Replaces MV830-MV840 CVv840 x X X X xX DO-7 Glass CV1006-16- Replaces FV1006-16, FV1106-16 CV1106-16 Xx x x x DO-7 Glass CV1620- Replaces MV1620-MV1650 Cv1650 x x x x x DO-7 Glass CV1652- Replaces MV1652-MV1666 CV1666 Xx xX X xX X DO-14 Glass Cvs000- Low Cost, Hermetic DO-7 Package CV5100 x Xx Xx Xx Xx X | Electrically Equivalent to Plastic MV2101-2115 V7-V100 x Xx V7- V100E xX X X X X xX v900- v982 X x X X X | 5nA Leakage Current V900E- V982E X X X X x xX VA107- Replaces PC107~PC173 VA173 x xX X X X DO-7, DO-14 Glass VA200- VA123 xX Xx X X 150Vo Rating VA300- VA313 Xx X Xx X {| 200Vp Rating VA521- VA824 x x x x Capacitance to 1300 pf VG107- VG339 X xX X x V20G- V100G x xX X X X x 1N950- 1N956 xX xX xX X xX x X | General Purpose, Low Cost 1N4786- 1N4815 X x X X X X | Low Leakage 1N5139 High Q (to 350), 60 Volt Ratings. A Tolerance 1N5148 X X X xX X | JAN, JANTX Qualified. 1N5441- 1N5476 x x xX xX X | Very High Q (up to 600), 30 Volt Ratings 1N5461- B and C Tolerance 1N5476 X xX Xx x X | JAN, JANTX Qualified. VA5139- 90 Volt Breakdown Equivalents to 1N5139-1N5143 VA5143 x xX Xx x High RF Voltage Applications 1N5714- High Voltage (to 20) Volts: High Capacitance 1N5718 x xX x x (to 1300pf), High Q (to 300) HIGH Q - HIGH CAPACITANCE SILICON EPITAXIAL VARACTRON VOLTAGE-VARIABLE CAPACITANCE DIODES VA521-824 e ALL EPITAXIAL CONSTRUCTION (P+NN-+) MECHANICAL DATA EPOXY CASE - PLATED COPPER LEADS .0302.002 DIA. CATHODE INDICATED BY COLOR BAND CASE STYLE 1 e Q AS HIGH AS 200 o bs DC(MWV) RATINGS =ere PMX FROM 25-100 VOLTS e WIDE AREA CASE STYLE 2 v ao Sc Be e ABSOLUTE MAXIMUM RATINGS + ELECTRICAL DATA b D0 op 0 uy 0298 PARAMETER SYMBOL MAX. UNITS Operating Temperature Toor 65 to +150 C ' case stvLe 3 Storage Temperature Titg 65 to +175 C Total Power Dissipation (@ 25C in free air) Pp 1 Watt iy Maximum Working Voltage MWV As Specified* VDC *Bias voltage plus signal voltage should not exceed MWV moe aia, 0,325 L100 -o| All Dimensions in Inches ELECTRICAL CHARACTERISTICS Ta = 25C (UNLESS OTHERWISE STATED) MAXIMUM MINIMUM CAPACITANCE WORKING Rs SATURATION DIODE (pf) VOLTAGE Q (MIN.} MINIMUM (OHMS MAX.) VOLTAGE CASE TYPE @4v0C @8Vv0C (vDC) @B8YDC 25MC TUNING RATIO @8VDC @ 10,A STYLE VA521 330 250 100 200 C.ay/C.r00y 5.0 125 110 1 VA522 330 250 80 200 C.ay/C.eoy 4.0 125 90 1 VA523 330 250 50 200 Cay/C.soy 4.0 125 60 1 VA524 330 250 25 200 C.ay/C.asy 3.0 125 30 1 VA621 660 500 100 150 C.ay/C.r00y 5.0 .09 110 2 VA622 660 500 80 150 C.a/C.sey 4.0 .09 90 2 VA623 660 500 50 150 Cay/C.soy 4.0 .09 60 2 VA624 660 500 25 150 Cay/C.2sy 3.0 .09 30 2 VA723 990 750 50 150 Civ/Csey 4.0 .06 60 2 VA/24 990 750 25 150 Cay/C.asy 3.0 .06 30 2 VA823 1320 1000 50 100 Cay/C.soy 4.0 .06 60 3 VA824 1320 1000 25 100 C.iy/C.asy 3.0 .06 30 3 NOTE: Capacitance values are +20%. Tolerances of +10% and +5%, and matched pairs, are available upon request. Capacitance values can be modified to meet specific requirements. #\ TELEDYNE CRYSTALONICS 147 Sherman Street, Cambridge, Mass. 02140 Tel: (617) 491-1670 TWX: 710-320-1196 13 14 VA521 824 Continued TYPICAL DIODE CAPACITANCE VS. REVERSE BIAS TYPICAL FIGURE OF MERIT VS. VOLTAGE FREQUENCY 10,000 S = 1000 E 1000 us oo 4 = < LL T,.=25C o ) BIAS= 8 VDC < uu f=25MC < 100 s 100 3 T,= 25C A BIAS:= 4 VDC C,=K(V+ D)y, 10 0.1 1.0 10 300 1 10 100 1000 REVERSE BIAS VOLTAGE (VDC) FREQUENCY (MC) TYPICAL FIGURE OF MERIT VS. TYPICAL TUNING RATIO VS. REVERSE BIAS VOLTAGE REVERSE BIAS VOLTAGE 600 14 500 = _ z Oo 2 T,=25C ~ T,:=25C 8 BIAS= 4 VDC co 400 BIAS= 8VD 10 hal c La = f=25MC - 8 bs 300 < J L- 6 i fe 200 9 3 = * i= 100 F OL i 2 3 456 10 20 30 405060 100 10 20 30 40 50 60 70 80 90 100 REVERSE BIAS VOLTAGE (VDC) REVERSE BIAS VOLTAGE (VDC) Crystalonics VA521-824 Varactron Voltage-Variable Capacitance Diodes are designed for applications such as VHF-UHF frequency multiplication, harmonic generation, oscillator tuning, electronic tuning, frequency modulation, parametric amplifiers, automatic frequency control, limiting, and switching. These diodes are manu- factured by Crystalonics exclusive Epitaxial Junction Process, which provides close parameter tolerances, high parameter stability, ex- treme ruggedness, and a high product of Q and Maximum Working Voltage. \ . TELEDYNE 147 Sherman Street, Cambridge, Mass. 02140 CRYSTALONICS Tel: (617) 491-1670 TWX: 710-320-1196