NPN HIGH CURRENT SWITCHING TABLE 11 NPN SILICON PLANAR HIGH CURRENT SWITCHING TRANSISTORS The transistors shown in this table are designed for high current, high dissipation switching applications in Industrial and Military equipments. This table should be referred to in conjunction with the LF Power Transistor Product Guide which contains full details of the available range of High Power Transistors. The devices are listed in order of decreasing Breakdown Voltages (Vcgand Vceo), decreasing Collector Current (Ic), Power Dissipation (Prox), etc. Max VcE(sat)t hee Switching Times Max at at (Typ) at Prot Type !Vcp/VcEeo} Ic at Tease|Package| Comple- le Ip |Min| Max! Ic | ton | toft Ie |=25C ment Vv Vv A v A A A ns ns A Ww BUY82 |150|] 60 10 1 10 1 40 | | 1-5] 320] 245,10] 30 TO-39 | BUY92 15 | 10 BUY81 150| 60 | 7-5 1 7-5 |0-75 | 40) 1 160 | 430 5 24 TO-39 | BUY91 10; | 7-5 BUY80 {| 150; 60 5 1 5 |0-5 | 40) | 0-5 | 170 200 5 20 TO-39 | BUYSO 15) 5 2N3419 |125] 80 5*| 1 5 | 0-5 20 60 1] 300 | 1200 1 30 TO-39 _ 2N3421 | 125] 80 5*| 1 5 | 0-5 | 40 | 120 1 | 300 | 1200 1 30 TO-39 _ BUX34 |120| 60 5 1 5 | 0-5 | 40 | 150 2 | 140 180 5 20 TO-39 _ BFX34 120| 60 5*) 14 5 | 0-5 | 40] 150 2 | 140 180 5 5 TO-39 _ BSV64 100] 60 5*| 1 510-5 | 40) 2 | 140 180 5 5 TO-39 _ 2N3418 85] 60 5*!| 1 5 | 0-5 20 60 7 | 300 | 1200 1 30 TO-39 _ 2N3420 85| 60 5*| 14 5 | 0-5 40 | 120 1 | 300 | 1200 1 30 TO-39 _ *lom tPulsed 300us PNP HIGH CURRENT SWITCHING TABLE 12 PNP SILICON PLANAR HIGH CURRENT SWITCHING TRANSISTORS The transistors shown in this table are designed for high current, high dissipation switching applications in industrial and Military equipments. This table should be referred to in conjunction with the LF Power Transistor Product Guide which contains full details of the available range of High Power Transistors. The devices are listed in order of decreasing Breakdown Voltages (Veg and Vceo), decreasing Collector Current (Ic), Power Dissipation (Pro), etc. Max VcE(sat)t hrE Switching Times Max at at (Typ) at Prot Type |VcBlVceo! Ic at Tease| Package|Comple- le Ip |Min| Max] I ton loff Ie |=25C ment Vv v A Vv A A A ns ns A Ww BUY92 | 100] 60 | 7-5 1 7:5 | 0-75 | 40 | 1 || 30 TO-39 | BUY82 BUY91 100] 60 5 1 5 |/05 | 40] 1 _ || 24 TO-39 | BUY81 BUY90 |100/ 60 3 1 3 / 0-3 40] 1 _ || 20 TO-39 | BUY80 tPulsed 300us 18 NPN HIGH CURRENT SWITCHING TABLE11 NPN SILICON PLANAR HIGH CURRENT SWITCHING TRANSISTORS The transistors shown in this table are designed for high current, high dissipation switching applications in Industrial and Military equipments. This table should be referred to in conjunction with the LF Power Transistor Product Guide which contains full details of the available range of High Power Transistors. The devices are listed in order of decreasing Breakdown Voltages (Vcgand Vceo), decreasing Colleztor Current (Ic), Power Dissipation (Prot), etc. Max VcE(sat)t hre Switching Times Max at at (Typ) at Prot Type |VcB]VcEo| Ic at Tease|Package | Comple- le ip |Min| Max! Ic | ton | tost lo |=25C ment Vv Vv A Vv A A A ns ns A w BU218 150| 60 20 | 1-1 20 2 40 | | 1-5 | 320 220 {| 10 | 115 TO3 BU217 150} 60 10 4 10 1 40 _ is 140 330 5 75 TO3 _ BUY82 150| 60 10 1 10 1 to _ 48 320 245 | 10 30 TO39 | BUY92 BUY81 150; 60 | 7-5 1 7-5 | 0-75 40 _ 160 430 5 24 TO39 | BUY91 BUY80 160) 60 5 1 5 | 0-5 40 _ 08 170 200 5 20 TO39 | BUYSO 2N3419 1125] 80 5*] 4 5 10-5 20 60 7 300 | 1200 1 30 TO39 _ 2N3421 | 125] 80 5*] 1 5 | 0-5 40 | 120 1 300 | 1200 1 30 TO39 _ BUX34 120| 60 5 1 5 |} 0-5 40 } 150 2 | 140 180 5 20 TO3 _ BFX34 120| 60 5*) 4 5 | 0-5 40 | 150 2 | 140 180 5 5 TO39 _ BSV64 100| 60 5*] 14 | 0-5 40; 2 | 140 180 5 5 TO39 _ 2N3418 85] 60 5*| 1 510-5 20 60 1 300 | 1200 1 30 TO39 _ 2N3420 85) 60 5*)] 4 5 |} 0-5 40 | 120 1 300 | 1200 1 30 TO39 _ *Iom tPulsed 300us PNP HIGH CURRENT SWITCHING TABLE12 PNP SILICON PLANAR HIGH CURRENT SWITCHING TRANSISTORS The transistors shown in this table are designed for high current, high dissipation switching applications in industrial and Military equipments. This table should be referred to in conjunction with the LF Power Transistor Product Guide which contains full details of the available range of High Power Transistors. The devices are listed in order of decreasing Breakdown Voltages (Vcpand Vceo), decreasing Collector Current (Ic), Power Dissipation (Prot), etc. Max VcE(sat)t hee Switching Times Max at at (Typ) at Prot Type |VcBjVcEo| Ic at Tease| Package/Comple- Ic IB |Min| Max] Ic | ten toff Ic |=25C ment Vv Vv A v A A A ns ns A Ww BUY92 ,100; 60 | 7-5 1 7:5 10-75 | 40} 1 |I| 30 TO39 | BUY82 BUY91 100| 60 5 1 5 |0-5 | 40} 1 _ || 24 TO39 | BUY81 BUYSO | 100; 60 3 1 3 }0-3 | 40] 1 || 20 TO33 | BUY80 tPulsed 300us 18