Numerical Index 2N4877 ~2N5026 ale MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS S(E - - - TYPE | f5/ G5 | REPLACE | PAGE | yce | Po |S] Ts | Vee | Vee |= Ite @to C| Voesan @c Bl |B ala MENT NUMBER = 3 = Z| mig #/3 =o @25C | S| C | (volts) | (volts) | 5 | (min) (max) 5} (volts) s 3 5/3 2N4877 S{N LPA 10W | C } 200 60] 0 20 | 100 4.04 1.0 4.0A 4.0M | T 2N4881 thru Field Effect Transistors, see Table on Page 1-166 2N4886 2N4888 S|P AFA 300M] A | 125 150 150; 0 40} 400 10M 0.5 10M 30M | T 2N4889 Ss |P AFA 300M] A 125 150 150] 0 80| 300 10M 0.5 10M 40M | T og S| P 8-306 MSS L.OW [A 60 40] 0 50 | 250 150M 1.4 150M 5.0]E 2N489 4 thru Unijunction Transistors, see Table on Page 1-174 2N4894 2N4895 S| N PMS 4.0W] Cc | 200 120 60] 0} 100] 300 2.0A 1.0 5.0A 4.0]/E 2N4.896 SEN PMS 4.0Ww | C | 200 120 60] 0 40 | 120 2.0A 1.0 5.0A 2.5]E 2N4897 S|N PMS 4.0W | c | 200 150 8040 40 | 120 2.04 1.0 5.04 2.5 ,5 2N4898 S| P 7-172 LPA 25W | C | 200 40 40] 0 20 {| 100 0.5A 0.6 1.0A 25, E 3.0M|T 2N4899 $7] P 7-172 LPA 25wW | C | 200 60 60] 0 20 | 100 0.54 0.6 1.0A 25 |E 3.0M | T 2N4900 S| P 7-172 LPA 25w | C1 200 80 80] 0 20 | 100 O.5A 0.6 1.0A 25 | E 3.0M | T 2N4901 S| P 7-176 LPA | 87.5W | C } 200 40 40] 0 20 80 1,0A 0.4 1.0A 20] E 4.0M/T 2N4902 S| P 7-176 LPA {| 87.5W | C | 200 60 60 | 0 20 80 1.04 0.4 1.0A 20|E 4.0M|T 2N4903 S| P 7-176 LPA } 87.5wW] C | 200 80 80] 0 20 80 1.0A 0.4 1.0A 20) E 4.0M)/T 2N4904 S| P 7-180 LPA | 87.5W | C | 200 40 40], 0 25 | 100 2.5A 1.0 2.54 40/E 4.0M| T 2N4905 S| P 7-180 LPA | 87.5W] C | 200 60 60} 0 25 | 100 2.5A 1.0 2.58 40] E 4.0M/T 2N4906 S| P 7-180 LPA | 87.5W{ Cj 200 80 80] 0 25; 100 2.5A 1.0 2.5A 40], E 4.0M| T 2N4907 | S| P LPA| 150W] C | 200 40] 0] 20] 80} 4.08] 0.75} 4.0A 4,.0M] T 2N4908 |S] P LPA} 150W] C } 200 60] O} 20] 80} 4.0A] 0.75] 4.0A 4.0M1T 2N4909 Ss} P LPA 150W | C | 200 80] 0 20 80 4.0A 0.75 4.0A 4.0M|T 2N4910 S| N 7-184 LPA 25W | C | 200 40 40] 0 20 | 100 0.5A 0.6 1.0A 25, 5 3.0M|T 2N4911 S| N 7-184 LPA 25W | C | 200 60 604, 0 20 | 100 O.5A 0.6 1.0A 25] E 3.0M)T 2N4912 S| N 7-184 LPA 25W} Cc] 200 80 80] 0 20] 100 0.54 0.6 1.0A 25|E 3.0M| T 2NG913 SEN 7-188 LPA} 87.5W | C} 200 40 4010 25) 100 2.54 1.0 2.58 20|E 4.0M| T 2N4914 S| N 7-188 LPA| 87.5W) C | 200 60 60] 0 25 | 100 2.54 1.0 2.54 20 | E 4.0M/T 2N4915 S| N 7-188 LPA | 87.5W) C | 200 80 80] 0 251 100 2.5A 1.0 2.5A 20) E 4.0M|T 2N4918 S| P 5-47 LPA 30W; C} 150 40 40] 0 20} 100 O,5A 0.6 1.,0A 25] E 3.0M] T 2N4919 S|] P 5-47 LPA 30W} Cc} 150 60 60] 0 201 100 0.54 0.6 1.0A 25] E 3.0M] T 2N49 20 S| P 5-47 LPA 30W) Cc} 150 80 80} 0 20) 100 0.54 0.6 1.0A 25) E 3.0M] T 2N4921 S} N 5-51 LPA 30W} C} 150 40 40] 0 20] 100 O.5A 0.6 1.0A 25] E 3.0M{ T 2N4922 S| N 5-51 LPA 30W} C} 150 60 60] 0 20} 100 O.5A 0.6 1.0A 25] E 3.0M{T 2N4923 S| N 5-51 LPA 30W} C} 150 80 80{ 0 20] 100 0.5A 0.6 1.0A 25], E 3.0M] T 2N49 24 SIN 9-114 RFA 1.0W] AJ 175 100 100} 0 40|{ 200 150M 0.4 50M 100M | T 2N4925 S|] N 9-114 RFA 1.0W}] AJ 175 150 150] 0 40] 200 150M 0.4 50M 100M | T 2N49 26 STN 9-115 RFA 1.0W] Af 175 200 200] 0 20] 200 30M 2.0 30M 25) E 300M | T 2N4927 S| N 9-115 RFA 1.0W] A] 175 250 250] 0 20} 200 30M 2.0 30M 25/5 300M} T 2N4928 S| P 8-307 HSA 1.0W] A] 200 100 100; 0 25} 200 10M 0.5 10M 100M | T 2N4929 S| P 8-307 HSA 1.0W] AJ] 200 150 150] 0 25] 200 10M 0.5 10M 100M { T 2N4930 Ss} P 8-307 HSA 1.0W}) A} 200 200 200} 0 20] 200 10M, 5.0 10M 20M) T 2N4931 Ss] P 8-307 HSA 1.0W} A} 200 250 250] 0 20| 200 10M 5.0 10M 20M | T 2N4937 S} P 11-47 DFA 600M| A] 200 50 40] 0 50} 250 1.0M SO} E 300M j T 2N4938 S| P 11-47 DFA 600M | Af 200 50 40] 0 50] 250 1.0M 50] E 300M] T 2N4939 S| P 11-47 DFA 600M] A} 200 50 40] 0 50] 250 1.0M 50] E 300M | T 2NG940 S yP 11-47 DFA 600M |A |200 50 40 |0 50 | 250 1.0M 50 |E 300M |T 2N4941 |S | P 11-47 | DFA | 600M /A /200 50 40 10 | 50 [250 | 1.0M 50 JE | 300M |T outs Ss |P 11-47 | DFA | 600M JA |200 50 40 |O | 50 |250 | 1.0M 50 {E | 300M {T 2N4949 Unijunction Transistors, see Table on Page 1-174 2N4957 Ss IP Q-117 LNA 200M [A {200 30 390 10 20 40 2.0M 1200M }T 2N4958 S }P 9-117 LNA. 200M |A }200 30 30 fO 20 40 2.0M 1000M |T 2N4959 Ss |P 9-117 LNA 200M JA | 200 30 30 |0 20 40 2.0M 1LO00M |T 2N4964 |S | P LNA | 200M [A 50 40 |O | 30 4120 10* 0.4 10M 40 |E 2N4965 S |P LNA 200M jA 50 40 |0 80 |400 10* 0.4 10M 100 JE 2N4966 S[N LNA 200M JA 50 40 |0 40 |200 1Lo* 0.4 LOM 40 {E 2N4967 S$ |[N LNA 200M |A 50 40 {0 {100 |600 10* 0.4 10M 100 |E 2N4968 Ss |N LNA 200M |A 30 25 10 40 | 200 10* 0.4 10M 40 |E 2N4969 S [N HSS 200M |A 50 30 |0 40 1120 150M 0.4 150M 2N4970 S |N HSS 200M |A 50 30 JO |100 |350 150M 0.4 150M 2N4971 S |P HSS 200M [A 50 4Q |0 40 4120 150M 0.4 150M 2N4972 S|P HSS 200M |A 50 40 ]O |100 |300 150M 0.4 150M 2N4973 S |P RFA 200M |A 20 15 [oO 20 3.0M 0.5 LOM 2N4974 S |P SPP 800M j}A |200 40 30 |O {5000 |9000|] 1.0* 25000 | E 175M |T 2N4975 S |P SPP 800M |A |200 40 30 |O 11000 ]4000; 1.0* 15000 JE 175M {T 2N4977 thru Field Effect Transistors, sce Table on Page 1-166 2N4979 2N4994 S |N RFC 200M JA 60 45 |0 40 |160 10M 2N4995 S |N RFC 200M }A 60 45 10 }100 | 400 10M 2N4996 |S [N RFC | 200M JA 30 18 |o | 50 2M 2N4997 S {N RFC 200M [A 30 18 |O 30 |150 2M 2N5010 Ss |N AFA 2.0W |C 500 500 |R 30 |180 25M 1.4 25M 2N501.1 SN AFA 2.0W JC 600 600 |R 30 1180 25M 1.5 25M 2N5012 S |N AFA 2.0W [C 700 700 IR 30 [180 25M 1.6 25M 2N5013 S |N AFA 2.0W [C 800 800 [R 30 +180 20M 1.6 20M 2Nn5014 |S |N AFA | 2.0W |C 900 | 900 }R | 30 |180 20M 1.6 20M 2N5015 S |N AFA 2,.0W 4C 1000 {1000 |R 30 | 180 20M 1.8 20M 2N5018 thru Field Effect Transistors, sec Table on Page 1-166 2N5021 2N5022 SP HSS 1.0W JA 50 50 }0 25 +100 500M 0.2 100M 2N5023 Ss |P HSS 1.0W 7A 30 30 10 40 |100 500M 0.17 100M 2N5025 SIN HPA 45w [Cc | 300 75 75 |0 20 2.0A 1.9 2.0A 2N5026 s|N HPA 45w |C | 300 90 90 {oO 20 2.04 1.0 2.0A 1-149GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS (SILICON) Switching and General Purpose Transistors Current versus Voltage OPTIMUM COLLECTOR CURRENT BVcto Oto 10 mA 10 mA to 100 mA 100 mA to 500 mA 500 mA to 1.04 AOAC 3OA Min Volts NPN PNP NPN PNP NPN PNP NPN PNP NPN PNP 15 2N916 2N916 2N696 2N1991 2N2330 2N1983 2N697 | 2N2331 2N1984 2N718 2N1420 29 2N2195 30 2N2218 | 2N3133 2N2218 | 2N2800 2N2219 | 2N3134 2N2219 | 2N2801 2N2221 | 2N3135 2N2221 | 2N2837 2N2222 | 2N3136 2N2222 | 2N2838 2N3299 | 2N3133 2N3300 | 2N3134 2N3301 | 2N3135 39 2N3302 | 2N3136 49 2N758 2N3250 2N2218A| 2N3250 2N2194 | 2N2904 2N2192 | 2N3244 2N3506 2N795 2N3251 2N2219A! 2N3251 2N2218A} 2N2905 2N2193 | 2N3245 2N3507 2N760 MM4048 2N22214! 2N2219A) 2N2906 2N915 2N2222A 2N2221A] 2N2907 2N929 2N2224 2N2222A!| 2N3485 2N930 2N3946 2N3486 2N3946 2N3947 2N4890 59 2N3947 60 2N758A | 2N3798 2N910 2N3250A 2N656 2N2904A 2ZN759A | 2N3799 2N911 2N3251A 2N699 2N2905A 2N760A | 2N3250A 2N1990 2N2906A 2N929A | 2N3251A 2N2907A 2N9304 2N3485A MM2483 2N3486A 79 MM2484 80 2N739 2N3494 2N720A | 2N3494 2N720A 2N3019 Y 2N740 2N3496 2N1893 | 2N3496 2N3019 2N3020 99 2N2405 2N3020 100 2N4924 | 2N3495 2N3498 | 2N3495 2N3498 | 2N3634 \ 2N3497 2N3499 | 2N3497 2N3499 | 2N3635 2N4928 2N4924 | 2N9634 2N4924 2N3635 149 2N4928 150 2N3114 | 2N4929 2N3500 | 2N3635 2N3500 | 2N3636 2N4925 | 2N4930 2N3501 | 2N3637 2N3501 | 2N3637 2N4926 2N4925 | 2N4929 2N4925 249 2N4926 | 2N4930 250 2N3742 | 2N3743 2N3742 | 2N3743 uP 2N4927 | 2N4931 2N4927 | 2N4931 D?'NWi(*=ww~rirosdc &{ WiehwWWMWWwwYo qh~w~wy* ~7* We > >, ,wWW, BCE)?0DiWwCOCC WN NW RF Transistors RF POWER TRANSISTORS (Listed in order of operating test frequency and power output) ALL SILICON NPN f Pout @ Pin Type MHz Ww Ww 2N3295 30 0.3 0.012 2N3296 30 3.0 0.075 2N3297 30 12 1.2 2N2948 30 15 2.0 2N2951, 52 50 0.6 O.1 2N2949, 50 50 3.5 0.35 2N2947 50 15 2.0 2N3950 50 50 4.5 2N3298 30 0.1 - 2N3375 100 7.5 1.0 2N3818 100 15 3.0 2N3553 175 2.5 0.25 2N3961 175 4.0 0.5 2N3924 175 4.0 1.0 2N3925 175 5.0 1.3 2N3926 175 7.0 2.0 2N3927 175 12 4.0 2N3632 175 13.5 3.5 2N3137 250 0.7 0.1 2N3664 250 2.2 0.4 2N3866 400 1.0 0.1 2N3948 400 1.0 90.25 2N4012 400 3.0 (typ) 1.0 2N3375 400 3. 0 (min) 1.0 2N3733 400 10 4.0 HIGH-VOLTAGE TRANSISTORS fp (MHz) @ Ic Type Vcro min max mA 2N4924 100 100 500 20 2N4925 150 100 500 20 2N4926 200 30 300 10 2N4927 250 30 300 10 9-7 BCWwWC WW. KL)[N XQ ,' $)p0D0) 'DYi MWiwyWV BWwiwyisXsiidd;i WM WW- RF Transistors 2N49724 (siticon) 2n4925 Veto = 100, f; = 100 500 MHz Pp = 5.0 W 150 V . . NPN silicon annular transistors designed for high-voltage, high-frequency amplifier applications. Collector connected to case MAXIMUM RATINGS Rating Symbol | 2N4924 | 2N4925 Unit Collector-Emitter Voltage Voro 100 150 Vde Collector- Base Voltage Yon 100 150 Vde CASE 79 - Emitter-Base Voltage Vv. 5.0 Vde (TO-39) EB Collector Current - Continuous Ig 200 mAdc Total Device Dissipation Ty = 25C Py 1.0 WwW Derate above 25C 5.71 mw/C Total Device Dissipation Te = 25C Py 5.0 WwW Derate above 25C 28.6 mw/C Operating Junction Temperature Range Ty ~65 to +175 C Storage Temperature Range stg -65 to + 200 C ELECTRICAL CHARACTERISTICS. 1, = 25C unless otherwise noted) | Characteristic Symbol | Min [ Max Unit | OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage* 2N4924 BVoRo 100 - Vde MQ = 10 mAdc, I, = 0) 2N4925 150 - Collector- Base Breakdown Voltage 2N4924 BVopo 100 - Vde Ug = 100 wAdc, Ig = 0) 2N4925 150 - Emitter-Base Breakdown Voltage BV ERG Vde Op = 100 tAde, lot 0) 5.0 - Collector Cutoff Current lono Adc Wop = 30 Vac, 1, = 0) - 0.1 op = 15 Vdc, Ty = 0) - 0.1 ON CHARACTERISTICS DC Current Gain* hip* - (Ig = 1.0 mAdc, Vor = 10 Vde) 25 - Oe = 10 mAdc, Vor = 10 Vdc) 35 - (Io = 150 mAdc, Vor = 10 Vdc) 40 200 Collector-Emitter Saturation Voltage* Ver(sat) Vde ag = 10 mAdc, Ib = 1.0 mAdc) - 0.25 = = - 4 lg 50 mAdc, I, 5.0 mAdc) 0. Base- Emitter On Voltage* Vee(on)* Vde le = 50 mAdc, Vor = 10 Vdc) - 0.95 DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product ip MHz (I, = 20 mAde, V,, = 20 Vde, f = 100 MHz) 100 500 Cc CE Collector- Base Capacitance Cob pF Vep = 20 Vde, I, = 0, f= 100 kHz) - 10 Collector-Emitter Capacitance Cob pF (Vpg = 1.0 Vdc, I, = 0, f= 100 kHz) - | 80 *Pulsed, PW = < 300 us, Duty Cycle = <= 2.0% 9-114