TECHNICAL DATA SHEET
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Website: http://www.microsemi.com
N-CHANNEL LOGIC LEVEL MOSFET
Qualified per MIL-PRF-19500/570
T4-LDS-0 18 8 Rev . 1 (1 0 19 8 5) Page 1 of 3
DEVICES LEVELS
2N6901 JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Drain – Source Voltage VDS 100 Vdc
Gate – Source Voltage VGS ± 10 Vdc
Continuous Drain Current
T
C = +25°C ID1 1.69 Adc
Continuous Drain Current
T
C = +100°C ID2 1.07 Adc
Max. Power Dissipation Ptl 8.33
(1) W
Drain to Source On State Resistance Rds(on) 1.4
(2) Ω
Operating & Storage Temperature Top, Tstg -55 to +150 °C
Note: (1) Derated Linearly by 0.067 W/°C for TC > +25°C
(2) VGS = 5Vdc, ID = 1.07A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Drain-Source Breakdown Voltage
VGS = 0V, ID = -1mAdc V(BR)DSS 100 Vdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 1.0mA
VDS ≥ VGS, ID = 1.0mA, Tj = +125°C
VDS ≥ VGS, ID = 1.0mA, T
= -55°C
VGS(th)1
VGS(th)2
VGS
th
3
1.0
0.5
2.0
3.0
Vdc
Gate Current
VGS = ±10V, VDS = 0V
VGS = ±10V, VDS = 0V, Tj = +125°C
IGSS1
IGSS2
±100
±200
nAdc
Drain Current
VGS = 0V, VDS = 80V
VGS = 0V, VDS = 80V, Tj = +125°C
IDSS1
IDSS2
1.0
50.0
µAdc
uAdc
Static Drain-Source On-State Resistance
VGS = 5V, ID = 1.07A pulsed
Tj = -125°C
VGS = 5V, ID = 1.07A pulsed
rDS(on)1
rDS(on)2
1.4
2.6
Ω
Ω
Diode Forward Voltage
VGS = 0V, ID = 1.69A pulsed VSD 0.8 1.6 Vdc
2N6901
TO-205AF
(formerly TO-39)
SEE FIGURE 1