HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6268-B
Issued Date : 1993.10.05
Revised Date : 2000. 09.25
Page No. : 1/4
HSMC Product Specifi cation
H2N6517
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N6517 is designed for general purpose applications requiring high
breakdown voltages.
Features
• High Collector-Emitt er Breakdown Voltage
• Low Collector-Emitter Saturat ion Volt age
• The H2N6517 is complementary to H2N6520
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature....................................................................................................... -55 ~ +150 °C
Juncti o n Tempe rature ............................................................................................... +150 °C Ma xim um
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................................ 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage................................................................................................... 350 V
VCEO Collector to Emitter Voltage................................................................................................ 350 V
VEBO Emitter to Base Voltage.......................................................................................................... 5 V
IC Collector Current .................................................................................................................. 500 mA
IB Base Current ........................................................................................................................ 250 mA
Characteristics (Ta=25°C, *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 350 - - V IC=100uA, IE=0
BVCEO 350 - - V IC=1mA, IB=0
BVEBO 5 - - V IE=10uA, I C=0
ICBO - - 50 nA VCB=250V, IE=0
IEBO - - 50 nA VEB=5V, I C=0
*VCE(sat)1 - - 0.30 V IC=10mA, IB=1mA
*VCE(sat)2 - - 0.35 V IC=20mA, IB=2mA
*VCE(sat)3 - - 0.50 V IC=30mA, IB=3mA
*VCE (sat)4 - - 1 V IC=50 mA, IB=5mA
VBE(on) - - 2 V I C= 100mA, VCE=10V
*VBE(sat)1 - - 0.75 V IC=10mA, IB=1mA
*VBE(sat)2 - - 0.85 V IC=20mA, IB=2mA
*VBE(sat)3 - - 0.90 V IC=30mA, IB=3mA
*hFE1 20 - - VCE =1 0V, IC=1mA
*hFE2 30 - - VCE=1 0 V, IC=10m
*hFE3 30 - 200 VCE=10V, IC=30mA
*hFE4 20 - 200 VCE=10V, IC=50mA
*hFE5 15 - - VCE=10V, IC=100mA
fT 40 - 200 MHz IC=10mA, VCE=20V, f=20MHz
Cob - - 6 pF VCB=20 V, f=1MH z, IE=0