For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
GENERAL DESCRIPTION
The 1214GN-280LV is an internally matched, COMMON SOURCE,
class AB GaN on SiC HEMT transistor capable of providing over 15.5dB
gain, 280 Watts of pulsed RF output power at 3ms pulse width, 30% duty
factor across the 1200 to 1400 MHz band. The transistor has internal
pre-match for optimal performance. This hermetically sealed transistor is
designed for L-Band Radar applications. It utilizes gold metallization and
eutectic attach to provide highest reliability and superior ruggedness.
CASE OUTLINE
55-KR
Common Source
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25C 500 W
Maximum Voltage and Current
Drain-Source Voltage (VDSS) 150 V
Gate-Source Voltage (VGS) -8 to +0 V
Maximum Temperatures
Storage Temperature (TSTG) -55 to +125 C
Operating Junction Temperature +250 C
ELECTRICAL CHARACTERISTICS @ 25C
Symbol Characteristics Test Conditions Min Typ Max Units
Pout Output Powe
r
Pout=280W, Freq=1200, 1300, 1400 MHz 280 W
Gp Power Gain Pout=280W, Freq=1200, 1300, 1400 MHz 15.5 16 dB
d Drain Efficiency Pout=280W, Freq=1200, 1300, 1400 MHz 53 58 %
D
r
Droop Pout=280W, Freq=1200, 1300, 1400 MHz 1.0 dB
V
SWR-T Load Mismatch Tolerance Pout=280W, Freq=1200 MHz 3:1
Өjc Thermal Resistance Pulse Width=3mS, Duty=30% 0.45 °C/W
Bias Condition: Vdd=+50V, Idq=100mA average current (Vgs= -2.0 ~ -4.5V ) with constant
gate Bias
FUNCTIONAL CHARACTERISTICS @ 25C
ID(Off) Drain leakage current VgS = -8V, VD = 50V 24 mA
IG(Off) Gate leakage current VgS = -8V, VD = 0V 16 mA
BVDSS Drain-source breakd own
voltage Vgs =-8V, ID = 46mA 150 V
DC parameters pass/failure criteria will be revised after mass production DC parameters distributions have
been determined.
Issue June 2013
EXPORT CLASSIFICATION: EAR 99
1214GN-280LV
280 Watts - 50 Volts, 3ms, 30%
Broad Band 1200 - 1400 MHz
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
Typical Performance Data
Freq(GH) Pin (W) Pout (W) Id (A) RL (dB) Eff(%) G (dB) Droop (dB)
1.2 7.9 337 3.3 -8 63% 16.28 0.6
1.3 7.9 329 3.4 -13.4 59.6% 16.17 0.75
1.4 7.9 304 3.0 -8.5 62.7% 15.83 0.7
14
15
16
17
18
19
20
21
22
23
24
25
26
50.0
75.0
100.0
125.0
150.0
175.0
200.0
225.0
250.0
275.0
300.0
325.0
350.0
4.0 5.0 6.3 7.9
Gain(dB)
Pout(W)
Pin(W)
1214GN‐280LV3ms@30%50V
1.2G 1.3G 1.4G
50%
53%
56%
59%
62%
65%
68%
71%
74%
77%
80%
83%
86%
50
75
100
125
150
175
200
225
250
275
300
325
350
4.0 5.0 6.3 7.9
Efficiency
Pout(W)
Pin(W)
1214GN‐280LV3ms@30%50V
1.2G 1.3G 1.4G
1214GN-280LV
280 Watts - 50 Volts, 3ms, 30%
Broad Band 1200 - 1400 MHz
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
Transistor Impedance Information
Note: in
Z is looking into the input circuit;
Load
Z is looking into the output circuit.
Impedance Data
Freq (GHz) Zs Zl
1.2 1.475 – j1.674 2.22 + j0.093
1.3 1.437 - j0.81 2.199 – j0.153
1.4 1.451 + j0.038 1.703 - j0.144
Please call the representative for detailed circuit configuration.
1214GN-280LV
280 Watts - 50 Volts, 3ms, 30%
Broad Band 1200 - 1400 MHz
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
55-KR PACKAGE DIMENSION
imension Min (mil) Min (mm) Max (mil) Max (mm)
A 370 9.40 372 9.44
B 498 12.65 500 12.7
C 700 17.78 702 17.83
D 830 21.08 832 21.13
E 1030 26.16 1032 26.21
F 101 2.56 102 2.59
G 151 3.84 152 3.86
H 385 9.78 387 9.83
I 130 3.30 132 3.35
J 003 .076 004 0.10
K 135 3.43 137 3.48
L 105 2.67 107 2.72
M 085 2.16 86 2.18
N 065 1.65 66 1.68
1214GN-280LV
280 Watts - 50 Volts, 3ms, 30%
Broad Band 1200 - 1400 MHz
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
The information contained in the document is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be
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authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is
granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels
or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of
Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any
notice. This product has been subject to limited testing and should not be used in conjunction with life-support or other mission-
critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied
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conditions which can be located on the Web at http://www.microsemi.com/legal/tnc.asp.
Revision History
Revision Level / Date Para. Affected Description
0.1 / 12 June 2013 - Initial Preliminary Release
1214GN-280LV
280 Watts - 50 Volts, 3ms, 30%
Broad Band 1200 - 1400 MHz
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
