November 2009 Doc ID 13206 Rev 3 1/14
14
STD100N3LF3
N-channel 30 V, 0.0045 Ω, 80 A, DPAK
planar STripFET™ II Power MOSFET
Features
■100% avalanche tested
■Logic level threshold
Applications
■Switching application
– Automotive
Description
This STripFET™ II Power MOSFET technology is
among the latest improvements, which have been
especially tailored to minimize on-state resistance
providing superior switching performance.
Figure 1. Internal schematic diagram
Type VDSSS RDS(on) IDPw
STD100N3LF3 30 V <0.0055 Ω80 A(1)
1. Current limited by package
110 W
1
3
DPAK
!-V
$4!"OR
'
3
Table 1. Device summary
Order codes Marking Package Packaging
STD100N3LF3 100N3LF3 DPAK Tape and reel
www.st.com
Contents STD100N3LF3
2/14 Doc ID 13206 Rev 3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STD100N3LF3 Electrical ratings
Doc ID 13206 Rev 3 3/14
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
VGS Gate-source voltage ± 20 V
ID (1)
1. Current limited by package.
Drain current (continuous) at TC = 25 °C 80 A
IDDrain current (continuous) at TC=100 °C 70 A
IDM (2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 320 A
PTOT Total dissipation at TC = 25 °C 110 W
Derating factor 0.73 W/°C
dv/dt (3)
3. ISD ≤ 80A, di/dt ≤ 360 A/µs, VDS ≤ V(BR)DSS, TJ ≤ TJMAX
Peak diode recovery voltage slope 3.9 V/ns
Tstg Storage temperature -55 to 175 °C
TJMax. operating junction temperature
Table 3. Thermal data
Symbol Parameter Value Unit
RthJC Thermal resistance junction-case max 1.36 °C/W
RthJA Thermal resistance junction-ambient max 100 °C/W
Tl
Maximum lead temperature for soldering
purpose 275 °C
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
IAR
Not-repetitive avalanche current
(pulse width limited by TJ max) 40 A
EAS
Single pulsed avalanche energy
(starting TJ = 25 °C, ID = IAV, VDD = 24 V) 500 mJ
Electrical characteristics STD100N3LF3
4/14 Doc ID 13206 Rev 3
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage ID = 250 µA, VGS = 0 30 V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125 °C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0) VGS = ±20 V ±200 nA
VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 1 2.5 V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 40 A
VGS = 5 V, ID = 20 A
0.0045
0.008
0.0055
0.01
Ω
Ω
VGS = 10 V,
ID = 40 A @125 °C
VGS = 5 V,
ID = 20 A @125 °C
0.0068
0.0146
Ω
Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs (1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance VDS = 10 V, ID = 15 A - 31 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0 -
2060
728
67
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 24 V, ID = 80 A
VGS = 5 V
Figure 16 on page 9
-
20
7
7.5
27 nC
nC
nC
RGGate input resistance
f = 1 MHz gate DC Bias = 0
test signal level = 20 mV
open drain
-1.9 Ω
STD100N3LF3 Electrical characteristics
Doc ID 13206 Rev 3 5/14
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD= 15 V, ID= 40 A,
RG=4.7Ω, VGS=10 V
Figure 15 on page 9
-
9
205
31
35
-
ns
ns
ns
ns
Table 8. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
ISD Source-drain current - 80 A
ISDM(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) - 320 A
VSD(2)
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage ISD = 40 A, VGS = 0 - 1.3 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 80 A,
di/dt = 100 A/µs,
VDD = 25 V, TJ = 150 °C
Figure 17 on page 9
-
40
40
2
ns
µC
A
Electrical characteristics STD100N3LF3
6/14 Doc ID 13206 Rev 3
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Transconductance Figure 7. Static drain-source on resistance
STD100N3LF3 Electrical characteristics
Doc ID 13206 Rev 3 7/14
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized BVDSS vs temperature
Figure 12. Normalized on resistance vs
temperature
Figure 13. Source-drain diode forward
characteristics
Electrical characteristics STD100N3LF3
8/14 Doc ID 13206 Rev 3
The previous curve gives the single pulse safe operating area for unclamped inductive
loads, under the following conditions:
PD(AVE) = 0.5 * (1.3 * BVDSS *IAV)
EAS(AR) = PD(AVE) * tAV
Where:
IAV is the allowable current in avalanche
PD(AVE) is the average power dissipation in avalanche (single pulse)
tAV is the time in avalanche
Figure 14. Allowable Iav vs time in avalanche
STD100N3LF3 Test circuits
Doc ID 13206 Rev 3 9/14
3 Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
Figure 17. Test circuit for inductive load
switching and diode recovery times
Package mechanical data STD100N3LF3
10/14 Doc ID 13206 Rev 3
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
STD100N3LF3 Package mechanical data
Doc ID 13206 Rev 3 11/14
DIM. mm.
min. typ max.
A 2.20 2.40
A1 0.901.10
A2 0.030.23
b0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.480.60
D 6.00 6.20
D1 5.10
E 6.40 6.60
E1 4.70
e2.28
e1 4.40 4.60
H9.35 10.10
L1
L1 2.80
L2 0.80
L4 0.60 1
R0.20
V2 0
o
8
o
TO-252 (DPAK) mechanical data
0068772_G
Packaging mechanical data STD100N3LF3
12/14 Doc ID 13206 Rev 3
5 Packaging mechanical data
TAPE AND REEL SHIPMENT
DPAK FOOTPRINT
DIM. mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B1.5 0.059
C 12.8 13.2 0.504 0.520
D20.2 0.795
G 16.4 18.4 0.645 0.724
N50 1.968
T 22.4 0.881
BASE QTY BULK QTY
2500 2500
REEL MECHANICAL DATA
DIM. mm inch
MIN. MAX. MIN. MAX.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D1.5 1.6 0.059 0.063
D1 1.5 0.059
E1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R40 1.574
W 15.7 16.3 0.618 0.641
TAPE MECHANICAL DATA
All dimensions are in millimeters
STD100N3LF3
14/14 Doc ID 13206 Rev 3
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