X00602MA1AA2 - STMicroelectronics

April 2008 Rev 5 1/9

X006

0.8 A sensitive gate SCRs

Features

■IT(RMS) = 0.8 A

■VDRM/VRRM = 600 V

■IGT = 200 µA

Description

Thanks to highly sensitive triggering levels, the

X006 SCR series is suitable for all applications

where the available gate current is limited, such

as ground fault circuit interrupters, overvoltage

crowbar protection in low power supplies,

capacitive ignition circuits, etc.

Available in though-hole or surface-mount

packages, these devices are optimized in forward

voltage drop and inrush current capabilities, for

reduced power losses and high reliability in harsh

environments.

TO-92

(X00602A)

SOT-223

(X00602N)

www.st.com

Characteristics X006

2/9

1 Characteristics

Table 1. Absolute ratings (limiting values)

Symbol Parameter Value Unit

IT(RMS) RMS on-state current (180 °Conduction angle) TO-92 Tl = 85 °C 0.8 A

SOT-223 Ttab = 100 °C

IT(AV) Average on-state current (180 °Conduction angle) TO-92 Tl = 85 °C 0.5 A

SOT-223 Ttab = 100 °C

ITSM Non repetitive surge peak on-state current tp = 8.3 ms Tj = 25 °C 10 A

tp = 10 ms 9

I²tI

²t Value for fusing tp = 10 ms Tj = 25 °C 0.4 A2S

dI/dt Critical rate of rise of on-state current

IG = 2 x IGT , tr ≤ 100 ns F = 60 Hz Tj = 125 °C 50 A/µs

IGM Peak gate current tp = 20 µs Tj = 125 °C 1 A

PG(AV) Average gate power dissipation Tj = 125 °C 0.1 W

Tstg

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125 °C

Table 2. Electrical characteristics

Symbol Test Conditions Value Unit

IGT VD = 12 V, RL = 140 Ω

MIN. 15 µA

MAX. 200

VGT MAX. 0.8 V

VGD VD = VDRM, RL = 3.3 kΩ , RGK = 1 kΩTj = 125 °C MIN. 0.2 V

VRG IRG = 10 µA MIN. 5 V

IHIT = 50 mA, RGK = 1 kΩMAX. 5 mA

ILIG = 1 mA, RGK = 1 kΩ MAX. 6 mA

dV/dt VD = 67% VDRM, RGK = 1 kΩTj = 125 °C MIN. 25 V/µs

VTM ITM = 1 A, tp = 380 µs Tj = 25 °C MAX. 1.35 V

Vt0 Threshold voltage Tj = 125 °C MAX. 0.85 V

RdDynamic resistance Tj = 125 °C MAX. 245 mΩ

IDRM

IRRM

VDRM = VRRM , RGK = 1 kΩ

Tj = 25 °C MAX. 1 µA

Tj = 125 °C MAX. 100

X006 Characteristics

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Table 3. Thermal resistances

Symbol Parameter Value Unit

Rth(j-a) Junction to ambient (DC) TO-92 150

°C/W

S = 5 cm2SOT-223 60

Rth(j-l) Junction to lead (DC) TO-92 70

Rth(j-t) Junction to tab (DC) SOT-223 30

Figure 1. Maximum average power

dissipation versus average on-state

current

Figure 2. Average and DC on-state current

versus case temperature (TO-92)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.0 0.1 0.2 0.3 0.4 0.5 0.6

P(W)

I (A)

T(AV)

α= 180°

360°

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0 25 50 75 100 125

I (A)

T(AV)

T (°C)

α= 180°

D.C.

TO-92

Figure 3. Average and D.C. on-state current

versus ambient temperature (epoxy

printed circuit board FR4, copper

thickness = 35 µm, SCU = 0.5 cm2)

(TO-92)

Figure 4. Average and DC on-state current

versus case temperature (SOT-223)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0 25 50 75 100 125

I (A)

T(AV)

T (°C)

amb

α= 180°

D.C.

TO-92

S = 0.5 cm

CU 2

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0 25 50 75 100 125

I (A)

T(AV)

T (°C)

tab

α= 180°

D.C.

SOT-223

Characteristics X006

4/9

Figure 5. Average and DC on-state current

versus ambient temperature (epoxy

PCB FR4, copper

thickness = 35 µm, SCU = 5 cm2)

(SOT-223)

Figure 6. Relative variation of thermal

impedance junction to ambient

versus pulse duration (PCB FR4,

copper thickness = 35 µm, SCU = 0.5

cm2) (TO-92)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0 25 50 75 100 125

I (A)

T(AV)

T (°C)

amb

α= 180°

D.C.

SOT-223

S = 0.5 cm

CU 2

0.01

0.10

1.00

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

Z/R

th(j-a) th(j-a)

t (s)

TO-92

S = 0.5 cm

CU 2

Figure 7. Relative variation of thermal

impedance junction to ambient

versus pulse duration (PCB FR4,

copper thickness = 35 µm, SCU = 0.5

cm2) (SOT-223)

Figure 8. Thermal resistance junction to

ambient versus copper surface

under tab (PCB FR4, copper

thickness = 35 µm) (SOT-223)

0.01

0.10

1.00

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

Z/R

th(j-a) th(j-a)

t (s)

SOT-223

S = 0.5 cm

CU 2

100

110

120

130

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

S(cm²)

R (°C/W)

th(j-a)

Figure 9. Relative variation of gate trigger

current, holding current and

latching current versus junction

temperature (typical values)

Figure 10. Relative variation of holding

current versus gate-cathode

resistance (typical values)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130

T (°C)

I,I,I[T] /

GT H L j I ,I ,I [T =25°C]

GT H L j

IGT

IH& IL

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

1.E-02 1.E-01 1.E+00 1.E+01 1.E+02

R(k)

I [R ] / I [ =1k ]

HGK H

ΩR

X006 Characteristics

5/9

Figure 15. On-state characteristics (maximum values)

Figure 11. Relative variation of dV/dt immunity

versus gate-cathode resistance

(typical values)

Figure 12. Relative variation of dV/dt immunity

versus gate-cathode capacitance

(typical values)

0.1

1.0

10.0

100.0

1.0E-01 1.0E+00 1.0E+01

R(k)

GK Ω

dV/dt[R ] / dV/dt[ =1k ]

GK ΩRGK

V = 0.67 x V

D DRM

100

110

C (nF)

dV/dt[C ] / dV/dt[ =1k ]

ΩR

V = 0.67 x V

R = 1k

D DRM

Figure 13. Surge peak on-state current versus

number of cycles

Figure 14. Non repetitive surge peak on-state

current for a sinusoidal pulse with

width tP < 10ms, and corresponding

value of I2t

1 10 100 1000

I (A)

TSM

Number of cycles

Non repetitive

T initial=25°C

Repetitive

T =25°C

t =10ms

One cycle

1.E-01

1.E+00

1.E+01

1.E+02

0.01 0.10 1.00 10.00

I (A), I t (A s)

TSM 22

t (ms)

I t

ITSM

T initial = 25°C

0.01

0.10

1.00

10.00

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0

I (A)

V (V)

Tj=125°C

T =25°C

V =0.85V

R =245m

T max.:

dΩ

Ordering information scheme X006

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2 Ordering information scheme

Figure 16. Ordering information scheme

X 006 02 M Z 1AA2

Blank

Sensitive SCR series

Sensitivity

Voltage

Package

Packing mode

Current

006 = 0.8 A

2AL2 = Ammopack

5AL2 = Tape & reel (TO-92)

5BA4 = Tape & reel (SOT-223)

02 = 200 µA

M = 600 V

A = TO-92 (A"Blank")

N = SOT-223 (N"No Blank”)

1AA2 = Bulk

X006 Package information

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3 Package information

●Epoxy meets UL94, V0

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a lead-free second level interconnect. The category of

second level interconnect is marked on the package and on the inner box label, in

compliance with JEDEC Standard JESD97. The maximum ratings related to soldering

conditions are also marked on the inner box label. ECOPACK is an ST trademark.

ECOPACK specifications are available at www.st.com.

Table 4. TO-92 (plastic) dimensions

Ref.

Dimensions

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 1.35 0.053

B 4.70 0.185

C 2.54 0.100

D 4.40 0.173

E 12.70 0.500

F 3.70 0.146

a 0.50 0.019

Table 5. SOT-223 dimensions

Ref.

Dimensions

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 1.80 0.071

A1 0.02 0.10 0.001 0.004

B 0.60 0.70 0.85 0.024 0.027 0.033

B1 2.90 3.00 3.15 0.114 0.118 0.124

c 0.24 0.26 0.35 0.009 0.010 0.014

D(1)

1. Do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15mm (0.006inches)

6.30 6.50 6.70 0.248 0.256 0.264

e2.3 0.090

e1 4.6 0.181

E(1) 3.30 3.50 3.70 0.130 0.138 0.146

H 6.70 7.00 7.30 0.264 0.276 0.287

V10° max

Ordering information X006

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Figure 17. SOT-223 footprint (dimensions in mm)t

4 Ordering information

5 Revision history

3.25

1.32

7.805.16

1.32

2.30 0.95

Table 6. Ordering information

Order code Marking Package Weight Base qty Delivery mode

X00602MA 1AA2

X0602 MA TO-92 0.2 g

2500 Bulk

X00602MA 2AL2 2000 Ammopack

X00602MA 5AL2 2000 Tape and reel

X00602MN5BA4 X06 2M SOT-223 0.12 g 1000

Table 7. Document revision history

Date Revision Changes

Jan-2002 3 Last update.

08-Aug-2006 4 SOT-223 package added.

1-Apr-2008 5 Reformatted to current standards. Device X00605 removed.

Updated dimensions in Ta b l e 5 .

X006

9/9

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