2003. 3. 25 1/2
SEMICONDUCTOR
TECHNICAL DATA
MPS8050S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
HIGH CURRENT APPLICATION.
FEATURE
Complementary to MPS8550S.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G 1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=35V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=6V, IC=0 - - 100 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=100 A, IE=0 40 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=2mA, IB=0 25 - - V
DC Current Gain
hFE(1) VCE=1V, IC=5mA 45 135 -
hFE(2) (Note) VCE=1V, IC=100mA 85 160 300
hFE(3) VCE=1V, IC=800mA 40 110 -
Collector-Emitter Saturation Voltage VCE(sat) IC=800mA, IB=80mA - 0.28 0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=800mA, IB=80mA - 0.98 1.2 V
Base-Emitter Voltage VBE VCE=1V, IC=10mA - 0.66 1.0 V
Transition Frequency fTVCE=10V, IC=50mA 100 190 - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz, IE=0 - 9 - pF
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC1.5 A
Collector Power Dissipation PC *350 mW
Junction Temperature Tj150
Storage Temperature Range Tstg -55 150
Note : hFE(2) Classification B:85 160 , C : 120 200 , D : 160 300
* PC: Package Mounted On 99.5% Alumina (10 8 0.6 )
h Rank
Type Name
Marking
Lot No.
BH
FE
2003. 3. 25 2/2
MPS8050S
Revision No : 1
f - I
C
COLLECTOR CURRENT I (mA)
1 3 10 100
T
TRANSITION FREQUENCY f (MHz)
10
C
COLLECTOR CURRENT I (mA)
0
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CEC
I - V
0.4 0.8 1.2 1.6 2.0
0.1
0.2
0.3
0.4
0.5
I =3.0mA
B
TC
30030
30
50
100
300
V =10V
CE
I =2.5mA
B
I =2.0mA
B
I =1.5mA
B
I =1.0mA
B
I =0.5mA
B
100
DC CURRENT GAIN h
1
COLLECTOR CURRENT I (mA)
0.1
10
30
50
0.3 10330
C
100
1k
FE
300
500
h - I
FE C
V =1V
CE
300 1
K
0.1
COLLECTOR CURRENT I (mA)
C
BASE-EMITTER VOLTAGE V (V)
BE
I - V
CBE
0 0.2 0.4 0.6 0.8 1.0 1.2
0.3
1
3
10
30
100
0.5
5
50 V =1V
CE
SATURATION VOLTAGE
BE(sat),
COLLECTOR CURRENT I (mA)
C
V V - I
BE(sat), CE(sat) C
V V (mV)
CE(sat)
I =10I
0.1
10
30
100
50
300
0.3 1 3 10 30 100
1k
500
300 1
K
C
3k
5k
V (sat)
CE
BE
V (sat)
B
550 1 5 10 50
100
10
1
5
50
f=1MHz
E
I =0
COLLECTOR OUTPUT CAPACITANCE
ob
COLLECTOR-BASE VOLTAGE V (V)
CB
C - V
ob CB
C (pF)
3
30
330
