SEMICONDUCTOR MPS8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. E B L Complementary to MPS8550S. L ) SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V IC 1.5 A PC * 350 mW Tj 150 Tstg -55 150 Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 1 P J N P DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M K C CHARACTERISTIC H MAXIMUM RATING (Ta=25 3 G A 2 D FEATURE 1. EMITTER 2. BASE 3. COLLECTOR ) SOT-23 Marking h FE Rank BH Type Name ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Lot No. ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=35V, IE=0 - - 100 nA Emitter Cut-off Current IEBO VEB=6V, IC=0 - - 100 nA Collector-Base Breakdown Voltage V(BR)CBO IC=100 A, IE=0 40 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=2mA, IB=0 25 - - V VCE=1V, IC=5mA 45 135 - hFE(2) (Note) VCE=1V, IC=100mA 85 160 300 hFE(3) VCE=1V, IC=800mA 40 110 - Collector-Emitter Saturation Voltage VCE(sat) IC=800mA, IB=80mA - 0.28 0.5 V Base-Emitter Saturation Voltage VBE(sat) IC=800mA, IB=80mA - 0.98 1.2 V hFE(1) DC Current Gain Base-Emitter Voltage VBE VCE=1V, IC=10mA - 0.66 1.0 V Transition Frequency fT VCE=10V, IC=50mA 100 190 - MHz - 9 - pF Collector Output Capacitance Note : hFE(2) Classification 2003. 3. 25 Cob VCB=10V, f=1MHz, IE=0 B:85 160 , C : 120 200 , D : 160 Revision No : 1 300 1/2 MPS8050S I C - V CE h FE - I C 1k 0.4 DC CURRENT GAIN hFE I B=3.0mA I B=2.5mA I B=2.0mA 0.3 I B=1.5mA 0.2 I B=1.0mA 0.1 0 0 0.4 0.8 1.2 1.6 300 100 50 30 10 0.1 2.0 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) I C - VBE V BE(sat), VCE(sat) - I C 100 5k 3k VCE =1V 50 30 10 5 3 1 0.5 0.3 1K IC =10I B 1k VBE (sat) 500 300 100 50 30 VCE (sat) 10 0.2 0.4 0.6 0.8 1.0 1.2 0.3 1 3 10 30 100 300 BASE-EMITTER VOLTAGE V BE (V) COLLECTOR CURRENT I C (mA) f T - IC C ob - VCB 300 VCE =10V 100 50 30 10 1 0.1 COLLECTOR OUTPUT CAPACITANCE C ob (pF) 0 3 5 10 30 50 100 COLLECTOR CURRENT I C (mA) 2003. 3. 25 0.3 COLLECTOR-EMITTER VOLTAGE V CE (V) 0.1 TRANSITION FREQUENCY f T (MHz) VCE =1V 500 I B=0.5mA SATURATION VOLTAGE V BE(sat), V CE(sat) (mV) COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) 0.5 Revision No : 1 300 100 1K f=1MHz I E =0 50 30 10 5 3 1 1 3 5 10 30 50 COLLECTOR-BASE VOLTAGE VCB (V) 2/2