SPECIFICATION Device Name : IGBT MODULE Type Name : 6MBI300U4-170 Spec. No. July 15 '05 S.Miyashita July 15 '05 T.Miyasaka K.Yamada : MS5F 6307 Y.Seki http://store.iiic.cc/ MS5F6307 1 a 14 H04-004-07b R e v i s e d Date Classification July.-15 -'05 Enactment Oct.-25-'05 Revision Ind. R e c o r d s Content Applied date Drawn Issued date a Revised characteristics VCE(sat) (P4/14) Checked T.Miyasaka K.Yamada S.Miyashita O.Ikawa MS5F6307 http://store.iiic.cc/ Checked Approved K.Yamada Y.Seki T.Miyasaka a 2 14 H04-004-06b 6MBI300U4-170 1. Outline Drawing ( Unit : mm ) 2. Equivalent circuit [Inverter] [Thermister] [Thermistor] MS5F6307 http://store.iiic.cc/ a 3 14 H04-004-03a 3.Absolute Maximum Ratings ( at Tc= 25C unless otherwise specified Items Symbols Conditions Maximum Ratings Units Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES 20 V Ic Collector current Icp Continuous 1ms Tc=25C 450 Tc=80C 300 Tc=25C 900 Tc=80C 600 -Ic -Ic pulse A 300 1ms 600 1 device 1385 Collector Power Dissipation Pc Junction temperature Tj 150 Storage temperature Tstg -40 ~ +125 Isolation between terminal and copper base (*1) voltage between thermistor and others (*2) Viso Screw Torque Mounting (*3) AC : 1min. C 3400 VAC 3.5 - Terminals (*4) W Nm 4.5 (*1) All terminals should be connected together when isolation test will be done. (*2) Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. (*3) Recommendable Value : Mounting 2.5~3.5 Nm (M5 or M6) (*4) Recommendable Value : Terminals 3.5~4.5 Nm (M6) 4. Electrical characteristics ( at Tj= 25C unless otherwise specified) Items Symbols Zero gate voltage Collector current ICES Gate-Emitter leakage current IGES Gate-Emitter threshold voltage VGE(th) Inverter Turn-on time Turn-off time VCE = 0V VGE=20V VCE = 20V Ic = 300mA Lead resistance, terminal-chip(*5) B value B - - 600 nA 4.5 6.5 8.5 V - 3.10 - - 2.25 2.40 Tj=125C - 2.65 - Cies VCE=10V,VGE=0V,f=1MHz - 28 - ton Vcc = 900V - 0.62 1.20 0.60 Ic = 300A a 2.85 tr Ic = 300A - 0.39 VGE=15V - 0.05 - toff Rg = 1.5 - 0.55 1.50 VGE=0V VF (chip) IF = 300A trr IF = 300A T=25 C o T=100 C o T=25/50 C (*5) Biggest internal terminal resistance among arm. s - 0.09 0.30 Tj= 25C - 2.10 2.45 Tj=125C - 2.30 - Tj= 25C - 1.80 2.15 Tj=125C - 2.00 - - 0.18 0.6 s - 1.00 - m - 5000 - 465 495 520 3305 3375 3450 MS5F6307 http://store.iiic.cc/ V nF tr (i) o R mA Tj= 25C R lead Resistance 3.0 Tj=125C VF (terminal) Reverse recovery time - a Tj= 25C Units - 2.70 VGE=15V tf Forward on voltage Thermistor VCE = 1700V a VCE(sat) (chip) Input capacitance VGE = 0V - VCE(sat) (terminal) Collector-Emitter saturation voltage Characteristics min. typ. max. Conditions V K a 4 14 H04-004-03a 5. Thermal resistance characteristics Items Symbols Thermal resistance(1device) Rth(j-c) Contact Thermal resistance (1device) (*6) Rth(c-f) Characteristics min. typ. max. Conditions IGBT - - 0.09 FWD - - 0.15 with Thermal Compound - 0.0167 - Units C/W (*6) This is the value which is defined mounting on the additional cooling fin with thermal compound. 6.Recommend way of module mounting to Heat sink Clamping (1) Initial : 1/3 specified torque, sequence (1)(2)(3)(4)(5)(6)(7)(8) (2) Final Full specified torque (3.5 Nm),sequence(4)(3)(2)(1)(8)(7)(6)(5) (7) (3) (1) (5) Mounting holes Heat sink (6) (2) (4) (8) Module 7. Indication on module Logo of production 6MBI300U4-170 300A 1700V Lot.No. Place of manufacturing (code) 8.Applicable category This specification is applied to IGBT Module named 6MBI300U4-170 . 9.Storage and transportation notes The module should be stored at a standard temperature of 5 to 35C and humidity of 45 to 75% . Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. Avoid excessive external force on the module. Store modules with unprocessed terminals. Do not drop or otherwise shock the modules when transporting. MS5F6307 http://store.iiic.cc/ a 5 14 H04-004-03a 10. Definitions of switching time 90% 0V 0V V GE L tr r Ir r Ic 90% 10% 10% 0V 0A V CE Ic 90% Vcc RG VCE 10% VCE tr ( i ) V GE tr Ic tf to f f to n 11. Packing and Labeling Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box MS5F6307 http://store.iiic.cc/ a 6 14 H04-004-03a 12. Reliability test results Reliability Test Items Test categories Test items 2 Mounting Strength 3 Vibration Mechanical Tests Test methods and conditions (Aug.-2001 edition) 1 Terminal Strength (Pull test) 4 Shock 5 Solderabitlity 6 Resistance to Soldering Heat 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor Environment Tests Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 Temperature Cycle Pull force : 20N (Control terminal) 40N (Main terminal) Test time : 101 sec. Screw torque : 2.5 ~ 3.5 Nm (M5) 3.5 ~ 4.5 Nm (M6) Test time : 101 sec. Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : 100m/s2 Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Maximum acceleration : 5000m/s2 Pulse width : 1.0msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Solder temp. : 2355 Immersion time : 50.5sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. Solder temp. : 2605 Immersion time : 101sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. Storage temp. : 1255 Test duration : 1000hr. Storage temp. : -405 Test duration : 1000hr. Storage temp. : 852 Relative humidity : 855% Test duration : 1000hr. Test temp. : 1202 Test humidity : 855% Test duration : 96hr. Test temp. : Test Method 401 Method 5 (0:1) Test Method 402 method 5 (0:1) Test Method 403 Reference 1 Condition code B 5 (0:1) Test Method 404 Condition code B 5 (0:1) Test Method 303 Condition code A 5 (0:1) Test Method 302 Condition code A 5 (0:1) Test Method 201 5 (0:1) Test Method 202 5 (0:1) Test Method 103 Test code C 5 (0:1) Test Method 103 Test code E 5 (0:1) Test Method 105 5 (0:1) Test Method 307 method Condition code A 5 (0:1) Low temp. -405 High temp. 125 5 Number of cycles RT 5 ~ 35 : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles Test temp. : Dwell time 6 Thermal Shock High temp. 100 +0 -5 +5 -0 Low temp. 0 Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles MS5F6307 http://store.iiic.cc/ a 7 14 H04-004-03a Reliability Test Items Test categories Test items (Aug.-2001 edition) 1 High temperature Reverse Bias Test temp. Bias Voltage Bias Method Endurance Endurance Tests Tests Reference Number Acceptnorms of ance EIAJ ED-4701 sample number Test methods and conditions Test duration 2 High temperature Bias (for gate) Test temp. Test duration : Ta = 1255 (Tj 150 ) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. Test temp. Relative humidity Bias Voltage Bias Method : : : : Test duration ON time OFF time Test temp. : : : : Number of cycles : Bias Voltage Bias Method 3 Temperature Humidity Bias 4 Intermitted Operating Life (Power cycle) ( for IGBT ) Test Method 101 5 (0:1) Test Method 101 5 (0:1) Test Method 102 Condition code C 5 (0:1) Test Method 106 5 (0:1) : Ta = 1255 (Tj 150 ) : VC = 0.8xVCES : Applied DC voltage to C-E VGE = 0V : 1000hr. 852 oC 855% VC = 0.8xVCES Applied DC voltage to C-E VGE = 0V 1000hr. 2 sec. 18 sec. Tj=1005 deg Tj 150 , Ta=255 15000 cycles Failure Criteria Item Characteristic Symbol Electrical Leakage current ICES characteristic IGES Gate threshold voltage VGE(th) Saturation voltage VCE(sat) Forward voltage VF Thermal IGBT VGE resistance or VCE FWD VF Isolation voltage Viso Visual Visual inspection inspection Peeling Plating and the others Failure criteria Unit Lower limit Upper limit LSLx0.8 - USLx2 USLx2 USLx1.2 USLx1.2 USLx1.2 USLx1.2 mA A mA V V mV USLx1.2 Broken insulation mV - The visual sample Note - LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal f rom the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely bef ore the measurement. MS5F6307 http://store.iiic.cc/ a 8 14 H04-004-03a Reliability Test Results Test categorie s Test items Mechanical Tests 1 Terminal Strength (Pull test) 2 Mounting Strength Number Reference Number of norms of test failure EIAJ ED-4701 sample (Aug.-2001 edition) sample Test Method 401 5 0 5 0 Method Test Method 402 method 3 Vibration Test Method 403 5 0 4 Shock Condition code B Test Method 404 5 0 5 0 Condition code B 5 Solderabitlity Test Method 303 Environment Tests Condition code A 6 Resistance to Soldering Heat Test Method 302 5 0 1 High Temperature Storage Condition code A Test Method 201 5 0 2 Low Temperature Storage Test Method 202 5 0 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor Test Method 103 5 * 5 0 5 Temperature Cycle Test Method 105 5 0 6 Thermal Shock Test Method 307 5 0 1 High temperature Reverse Bias Test Method 101 5 * Test Method 101 5 0 Test Method 102 5 * 5 0 Test code C Test Method 103 Test code E method Endurance Tests Condition code A 2 High temperature Bias ( for gate ) 3 Temperature Humidity Bias Condition code C 4 Intermitted Operating Life (Power cycling) ( for IGBT ) Test Method 106 * under confirmation MS5F6307 http://store.iiic.cc/ a 9 14 H04-004-03a Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C/ chip 800 VGE=20V 15V 600 12V Collector current : Ic [A] Collector current : Ic [A] 800 10V 400 200 VGE=20V 15V 600 400 10V 200 8V 8V 0 0 0 1 2 3 4 0 5 Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 2 3 4 5 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip 10 Collector - Emitter voltage : VCE [ V ] 800 Tj=25C Collector current : Ic [A] 1 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] 600 Tj=125C 400 200 0 8 6 4 Ic=600A Ic=300A Ic=150A 2 0 0 1 2 3 4 5 5 Collector-Emitter voltage : VCE [V] 10 15 20 25 Gate-Emitter voltage : VGE [V] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C Dynamic Gate charge (typ.) Vcc=900V Ic=300ATj= 25C Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] 1000.0 Capacitance : Cies, Coes, Cres [ nF ] 12V 100.0 Cies 10.0 Coes 1.0 Cres VCE VGE 0.1 0 10 20 30 Collector-Emitter voltage : VCE [V] 0 200 400 MS5F6307 http://store.iiic.cc/ 600 800 1000 Gate charge : Qg [nC] a 10 14 H04-004-03a Switching time vs. Collector current (typ.) Vcc=900V, VGE=15V, Rg=1.5, Tj= 25C Switching time vs. Collector current (typ.) Vcc=900V, VGE=15V, Rg=1.5, Tj=125C 10000 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 ton toff tr tf 100 10 toff 1000 ton tr tf 100 10 0 100 200 300 400 500 600 0 100 Collector current : Ic [A] 500 600 ton toff tr tf 150 Eoff(125C) 125 100 Err(125C) Eoff(25C) Eon(125C) Err(25C) 75 Eon(25C) 50 25 10 0 0.1 1.0 10.0 100.0 0 100 200 Gate resistance : RG [] 300 400 500 600 Collector current : Ic [A] Switching loss vs. Gate resistance (typ.) Vcc=900V, Ic=300A, VGE=15V, Tj= 125C Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 1.5 ,Tj <= 125C Stray inductance <= 100nH 300 800 250 Eon 200 150 Eoff 100 Collector current : Ic [A] Switching loss : Eon, Eoff, Err [ mJ/pulse ] 400 Switching loss vs. Collector current (typ.) Vcc=900V, VGE=15V, Rg=1.5 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 10000 100 300 Collector current : Ic [A] Switching time vs. Gate resistance (typ.) Vcc=900V, Ic=300A, VGE=15V, Tj= 25C 1000 200 600 400 200 Err 50 0 0 0.1 1.0 10.0 100.0 Gate resistance : RG [] 0 500 MS5F6307 http://store.iiic.cc/ 1000 1500 Collector-Emitter voltage : VCE [V] a 11 14 H04-004-03a Forward current vs. Forward on voltage (typ.) chip Reverse recovery characteristics (typ.) Vcc=900V, VGE=15V, Rg=1.5 1000 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 800 Forward current : IF [A] 700 Tj=25C 600 Tj=125C 500 400 300 200 100 Irr (125C) Irr (25C) trr (125C) trr (25C) 100 10 0 0 1 2 3 0 4 100 200 300 400 500 600 Forward current : IF [A] Forward on voltage : VF [V] [ Thermistor ] Transient thermal resistance (max.) Temperature characteristic (typ.) 100.0 FW D 0.100 Resistance : R [ k] Thermal resistanse : Rth(j-c) [ C/W ] 1.000 IGBT 0.010 0.001 0.001 10.0 1.0 0.1 0.010 0.100 1.000 Pulse width : Pw [sec] -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Temperature [ o C ] MS5F6307 http://store.iiic.cc/ a 12 14 H04-004-03a Warnings - This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. - Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction, such as fire, its spreading, or explosion. - Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. - If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. - Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability is classified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and down of case temperature (Tc), and depends on cooling design of equipment which use this product. In application which has such frequent rise and down of Tc, well consideration of product life time is necessary. (No.: MT5F12959)Tj Tc(Tc) - Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. - Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will be worse and over heat destruction may occur. 100mm100um10um - In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the thermal compound amount was not enough or its applying method was not suitable, its spreading will not be enough, then, thermal conductivity will be worse and thermal run away destruction may occur. Confirm spreading state of the thermal compound when its applying to this product. (Spreading state of the thermal compound can be confirmed by removing this product after mounting.) () - It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. RBSOARBSOA - If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some countermeasures against static electricity. MS5F6307 http://store.iiic.cc/ 13 a 14 H04-004-03a Warnings - Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. - In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent this malfunction. (Recommended value : -VGE = -15V) -VGE-VGE : -VGE = -15V) - In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction. dv/dt +VGE, -VGE, RG - This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between C-E terminals. Use this product within its absolute maximum voltage. VCESVCE Cautions - Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. - The application examples described in this specification only explain typical ones that used the Fuji Electric Device Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. - The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems, please apply after confirmation of this product to be satisfied about system construction and required reliability. If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd. MS5F6307 http://store.iiic.cc/ a 14 14 H04-004-03a