MC1496P - Motorola / Freescale Semiconductor

Order this data sheet by MC1496/D

Specifications and Applications

Information

BALANCED MODULATOR/ DEMODULATOR

. . designed for use where the output voltage is aproduct of an

input voltage (signal) and aswitching function (carrier). Typical

applications include suppressed carrier and amplitude modulation,

synchronous detection, FM detection, phase detection, and chopper

applications. See Motorola Application Note AN-531 for additional

design information.

.Excellent Carrier Suppression – 65 dB typ @0.5 MHz

–50dBtyp@10 MHz

.Adjustable Gain and Signal Handling

.Balanced Inputs and Outputs

.High Common Mode Rejection – 85 dB typ ,,,$.

...

FIGu RE2–

SUPPRESSED-CARRIER

SPECTRUM

FIGURE 3 –

AMPLITUDE-MODULATION

OUTPUT WAVEFORM

FIGu RE4–

AMPLITUDE-MODUL

SPECTRUM .ATION

MC1496

MC1596

141uuu LL -

74X ‘

Bias (Top View)

LSUFFIX

CERAMIC PACKAGE

CASE 632-08

DSUFFIX

PLASTIC PACKAGE

CASE 751A-02

SO-14

PSUFFIX

PLASTIC PACKAGE

CASE 646-06

I+Signal , . .

Input ~-,, ‘EE

Gain Adjust ,,, NC

Gain Adjust ,,, –output

-Signal ,,, NC

Input ,,,

Bias –Carrier Input

,NC

+output ‘

NC ‘,+Carrier

Input (Top View)

ORDERING INFORMATION

MC1~6D S@14

MC1496G Metal Can

o~cto +70~c

MC14S6L Ceramic DIP

MC14WP PlasticDIP

MC15SSG Metal Can

-55SCto +125-C

MC1596L Ceramic DIP

OMOTOROLA INC., 1988 DS9132R3

.—

—

MAXIMUM RATINGS* (TA = + 25°C unless otherwise noted)

Rating Symbol Value

Applied Voltage AV 30

(V6 –V7, V8 –Vl,Vg –V7, Vg –V8, V7 –V4, V7 –Vl,

V8 –V4, V6 –V8, V2 –V5, V3 –V5)

Unit

Vdc

Differential Input Signal V7 –V8 +5,0

V4 –VI *(5+ i5Re}

Maximum Bias Current 15 10

Thermal Resistance, Junction to ~r ROJA

Ceramic Dual In-Line Package 100

Plastic Dual In-Line Package 100

Metal Package 160

Vdc

“CM

Operating Temperature Range TA

MC1496 Oto +70

MCI 596 –55to +125

Storage Temperature Range Tstg –65to +150

‘c

“c

ELECTRICALCHARACTERISTICS* (Vcc =+12 Vdc, VEE =–8.0 Vdc, II

TA = + 25°C unless otherwise noted) (All input and output char =1.0 mAdc, RI =3.9 k~, R- =1.0 kQ,

are sir

Note

:.end-ed~le~~ othe~ise noted

eristl

Hg.

MC1596 ‘i \.

1+., MC1496

MinSymbol Min Typ

140

0.04

300

3.5

200

2.0

5.0

0.7

2.0

5.0

– 85

8,0

8.0

2.0

3.0

Max Unit

Characteristic

—

Carrier Feedthrough

VC =60 mV(rms) sine wave and fc =1.0 kHz

offset adjusted to zero fc =10 MHz

VC =300 mVp-p square wave:

offset adjusted to zero fc =1.0 kHz

offset not adiusted f~ =1.0 kHz

1~V(rms)

mV(rms)

—

0.4

200

>—

0.2

100

Carrier Suppression

fs =10 kHz, 300 mV(rms)

fc =500 kHz, 60 mV(rms) sine wave

,?(

?*Io

50 ——

—

f; =10 MHz, 60 mV(rms) sine wave

Transadmittance Bandwidth (Magnitude) (RL =50 ohms)

Carrier Input Port, VC =60 mV(rms) sine wave

fs =1.0 kHz, 300 mV(rms) sine wave

Signal Input Port, VS =300 mV(rms) sine wave

IVCI =0.5 Vdc

MHz

300

——

33.5 2.5 VN

—

—200

2.0 —

——

—

6—40

5.0 —

Input 8ias Current 7

—

0.7

5.0

7.0

7,0

—

Average Temper@?$&@fficient of Input Offset Current

(TA =–55°C’~~*~:~5”C)

output ~fi,@i&f;re*t

2.0 —

714 50 80

—

7ITCIOOI 90 nWC

— — — —

CMV

Ctw*bn-MOde lnDut Swina, Sianal Port, fs =1.0 kHz 945.0 Vp-p

CO’%mon-Mode Gain, Signal Port, fs =1.0 kHz,

IVCI =0.5 Vdc

Common-Mode Quiescent Output Voltage (Pin 6or Pin 9)

9ACM – 85 dB

— —

Vout

Icc

IEE

8,0 Vp-p10 — —

—

— — —

Differential Output Voltage Swing Capability

Power Supply Current

16 +Ig

8,0

2,0

3,0

Vp-p

—

3.0

4.0

—

4.0

5.0

mAdc

Ilo

DC Power Dissipation 75mW

—

*Pin number references pertain to this device when packaged in ametal can. To ascertain the corresponding pin numbers for plastic or

ceramic packaged devices refer to the first page of this specification sheet.

@MOTOROLA Semiconductor Products Inc.

GENERAL OPERATING INFORMATION*

Notel –Carrier Feedthrough

Carrier feedthrough is defined as the output voltage at carrier

frequency with only the carrier applied (signal voltage =0),

Carrier null is achieved by balancing the currents in the differ-

ential amplifier by means of abias trim potentiometer (RI of

Figure 5).

Note 2 – Carriar Suppression

Carrier suppression is defined as the ratio of each sideband out-

put to carrier output for the carrier and signal volt~e levels speci-

fied.Carrier suppression is very dependent on carrier input level, as

shown in Figure 22. Alow value of the carrier does not fully

switch the upper switching devices, and results in lower signal

gain, hence lower carrier suppression. Ahigher than optimum car-

rier level results in unnecessary device and circuit carrier feed-

through, which again degenerates the suppression figure. The

MC1 596 has been characterized with a 60 mV(rms) sinewave

carrier input signal. This level provides optimum carrier suppres-

sion at carrier frequencies in the vicinity of 500 kHz, and is

generally recommended for balanced modulator applications.

Carrier feedthrough is independent of signal level, Vs. Thus

carrier suppression can be maximized by operating with large sig-

nal levels. However, alinear operating mode must be maintained

in the signal-input transistor pair —or harmonics of the modulating

signal will be generated and appear in the device output as spurious

sidebands of the suppressed carrier. This requirement places an

uPPer limit on inPut-signal amplitude (see Note 3and Figure 20).

Note also that an optimum carrier level is recommended in Fig-

ure 22 for good carrier suppression and minimum spurious side-

band generation.

At higher frequencies circuit layout is very important in order

to minimize carrier feedthrough. Shielding may be necessary in

order to prevent capacitive coupling between the carrier in~$t

leads and the output leads. r.?,.’~..~:~.

l\,,:,,

!l>.< ,

.,.

x:.. ,:1<

Aconstant dc potential is applied t~~~h$.~$?~er input termina Is to

fully switch two of the upper tr~%i{~~{$><’on” and two transistors

“off” (Vc =0.5 Vdc). This in:&ffd~ forms acascode differential

~+.>

amplifier. ~~~:i,,:,~’

Linear operation req:i,~~~h~at the signal input be below acriti-

cal value determined by ~~’~l~,,$he bias current 15

,,~,~>,,::{,y,.,,~;~’

Note that in,j$~e$st~’’cir cuit of Figura 10, VS corresponds to a

maximum v~e q~ ~volt peak.

>:8’::::,‘J$L>$F.r~$’

Note 4~~~&on-Mode Swing

?~&-~&~mon-mode swing is the voltage which may be applied

to bo~bases of the signal differential amplifier, without saturating

the current sources or without saturating the differential amplifier

itself by swinging it into the upper switching devices. This swing

is variable depending on the particular circuit and bi~ing condi-

tions chosen (see Note 6).

Note 5 – Power Dissipation

Power dissipation, PD, within the integrated circuit package

should be calculated as the summation of tha voltage-current prod-

UCtS at each pOrt, i.e. aSSUming Vg =V6, 15 =16 =19 and ignoring

@MOTOROLA

base current, PD =2 15 (V6 –V1O) +15 (V5 –V1O) where sub-

scripts refer to pin numbers.

Note 6 – Design Equations

The following is apartial list of design quations needQ, to

operate the circuit with other supply voltagas and inpu~<&,O~~-

tions. See Note 3for Re equation. &.~~,....z,.h

,., -c>.

~a,. ‘‘?t{Jp

.<:)

..-,,\...

,Is ~.i+,, v6=vg=v+–15RL

“$:t;,,

..>+~,i?.:i

,?$tefi?=Biasing

QJr,. .....

$$~$$~~fie MC1 596 requires three dc bias vo Itage levels which must be

..~~et externally. Guidelines for setting up these three levels include

,,,~i~ maintaining at Ie=t 2volts collector-base bias on all transistors

while not exceeding the voltages given in the absolute maximum

rating table;

30 Vdc >[(V6, Vg) –(V7, V8)] >2Vdc

30 Vdc >[(V7, V8) –(Vi, V4)] >2.7 Vdc

30Vdc >[(VI, V4) –(V5)1 22.7 Vdc

The foregoing conditions are based on the following approxima-

tions:

V6 =Vg, V7 =V8, VJ = V4

Bias currents flowing into pins 1, 4, 7, and 8are transistor base

currents and can normally be neglected if external bias dividers

are designed to carry 1.0 mA or more,

Note 8–Transadmittance Bandwidth

Carriar transadmittance bandwidth is the 3-dB bandwidth of

the device fomard transadmittance as defined by:

i. (each sideband)

Y21C =vs (signal) Vo=o

Signai transadmittance bandwidth is the 3dB bandwidth of the

device forward transedmittance as defined by:

i. (signal)

Y21S =VS (signal) Vc =0.5 Vdc, V. =O

*Pin number references pertain to this device when packaged in a

matal can. To ascertain the corresponding pin numbers for plas-

tic or ceramic packaged devices refer to the first page of this

specification sheet.

Semiconductor Products Inc.

Note 9–Coupling and Bypass Capacitors Cl and C2 Note 12 – Signal Port Stability

Capacitors Cl and C2 (Figure 5) should be selected for are- Under certain values of driving source impedance, oscillation

actance of less than 5.0 ohms at the carrier frequency. may occur. Inthis event, an RC suppression network should be

connected directlv to each input using short leads. This will reduce

the 0of the source-tuned circuits that muse the oscillation

Note 10 – Output Signal, V. —

SIGNAL INPUT

The output signal is taken from pins 6and 9, either balanced (PINS 1&4)

or single-ended. Figure 12 shows the output levels of each of the

two output sidebands resulting from variations in both the car-

rier and modulating signal inputs with asingle-ended output

connection.

‘>3’,,,.:,.,

L~.!1,,.

‘-!:[\?\

—~a,.

—Pc1 Re=lk

,.<,’ ~,)

51 0.1 PF

C* 2 3

CARRIER O.lpF -8 *+v~

lNPUTVc HI MC1496G ~~

1MC1496G 6

Vs. MC1596G MC1596G

T-4

MODULATING 99

SIGNAL -%,}:*

INPUT 10 k 10k 51 5.*$,it},,

~~l.\’ii

,1:.,,

-8 Vdc

VEE

[f 6.8 k

-8 Vdc

FIGURE 8 – TRANSCONDUCTANCE BANDWIDTH

Vcc

lk lk

—B

51 0.1 PF

CARRIER O,lPF

INPUT “C+ 7

SIGNAL

INPUT 10k /+ 10k

Vs●o

111

MODULATING r

CARRIER NULL ,. -

-8 Vdc

VEE

INOTE :Pi” ~“~ber references pertein to this de”ice when peckaged in ametal can. To ascertain the corresponding pin

numbers for plastic or ceramic peckaged devices refer to the first page of this specification sheet.

@MOTOROLA Semiconductor Products Inc.

—

TEST CIRCUITS (continued)

FIGURE 9 – COMMON-MODE GAIN FIGURE 10 – SIGNAL GAIN AND OUTPUT SWING

Vs 9

~,10 550: :

50 6.8 k

—●~

-aVdc

VEE

NOTE :Pin number ~efere”ces pertain to this device when packaged in ametal can. TO aster

numbers for plastic or ceramic packagecl devices refer to the first page of this s

~~,,

TYPICAL CHARACTERISTICS (CO~tlK~~@?

Tvpical characteristics were obtained with circuit shown in Fi~&~~5, fc =500 kHz (sine wave),

Vc =60 mV(rms), fs =1kliz, VS =300 mv(rms), T+~;$25°~>~nless Otherwi$e noted.

,. ‘$:.,$

FIGURE 11 – SIDEBAND OUTPUT versus CARRIER LEVELS ,$s~\G~E 12 – SIGNAL-PORT PARALLEL-EQUIVALENT

+$? 1,,, INPUT RESISTANCE versus FREQUENCY

Vc, C~Rl<%\$&EL (mV[rrns] )

1.0 2.0 5.0 10 20 50 100

f, FREQUENCY (MHz)

2100 \. 1

-qp

L,1\,

—

:50 1I I \l

m11

LIl\

b, , I I I , I , , \ ,

z10 II I I I I I II I kI I I I I I

ui]

I.ul I I I[iI I I I I 1I1 1 1 I1I

o1.0 10 100

f, FREQUENCY (MHz}

@MOTOROLA Semiconductor Products Inc.

TYPICAL CHARACTERISTICS (continued)

Typical characteristics were obtained with circuit shown in Figure 5, f~ =500 kHz (sine wave),

VC =60 mV(rms), f~ =1kHz, VS =300 mV(rms), TA =+25°C unless otherwise noted.

FIGURE 15 – SIDEBAND AND SIGNAL PORT

TRANSADMITTANCES versus FREQUENCY

1.0

0.9

F0.8

E0.7

~0.6

k0.5

z0.4

~0.3

z0.2

.“ 0.1

00.1 1,0 10 100 1000

fc, CARRIER FREQUENCY (MHz)

FIGURE 17 – SIGNAL-PORT FREQUENCY RESPONSE

FIGURE 16 – CARRIER SUPPRESSION

verws TEMPERATURE

-75 -50 -2@+:?i O‘* +25 +50 +75 +100 +125 +150 +175

*\:.

.@~~URE18 –CARRIER SUPPRESSION versus FREQUENCY

0.05 0.1 0.5 1.0 5.0 10 50

fc, CARRIER FREQUENCY (MHz)

IHllll I I I

I! I

III111111 I I I1111’1 IIIJ

0.05 0.1 0.5 1.0 5.0 10 50

fC, CA RR IERFREQUENCY (MHz)

0200 400 600 800

VS, INPUT SIGNAL AMPLITUDE (mV[rms] )

@M070ROLA Semiconductor Products Inc.

.—

—

TYPICAL CHARACTERISTICS (continued)

FIGURE 21 – SUPPRESSION OF CARRIER HARMONIC

SIDEBANDS versus CARRIER FREQUENCY

E 10

~g20

-a

am30

Uu0

AE40

0a50

*60

i,05 0.1 0.5 1.0 5.0 10 50

fC, CAR RI ERFREQUENCY (MHz)

The MCI 596/MC 1496, amonolithic balanced modulator cir-

cuit, is shown in Figure 23.

This circuit consists of an upper quad differential amplifier

driven by astandard differential amplifier with dual current

sources. The output collectors are cross-coupled so that full-wave

balanced multiplication of the two input voltages occurs. T@~Js,

the output signal is aconstant times the product of the twdMnp@3.,

cates that the output ”spectrum will con;st of onig~~k~h’~rn and

difference of the two input frequencies. Thus,,$$>~~~b& may be

used as abalanced modu Iator, doubly balan$e~,+y~r, product

detector, frequency doubler, and other qp~?~a$$ons requiring

these particular output signal characteris:~.e ‘i~~+~’:,1:

The lower differential amplifier has~~ts ~;tters connected to

the package pins so that an extert~g$~~,~wr resistance may be

used. Also, external load resistom. ar~$employed at the device

output

t:~,..:;-

The upper quad dif~~~t~~! amplifier may, be operated either

in alinear or asatu~~e~$,. *de. The lower differential amplifier

,. ...,>~.~,.t..

is operated in ali~$~~m~~ for most applications.

For Iow-lev@[ ,@$~&%ion at both input ports, the output si9nal

will contain,d,:~fi~~=n’~ difference frequencv components and have

an amplitu~ w~cE is afunction of the product of the input signal

‘,.A’}.

amp Iitq@&@q<*..*t~+

,:..+..:,

For’’&~~~JPevel operation at the carrier input port and linear

.;,,.,

op@~WQ,-et the modulating si9nal Port, the output si9nal will

cont$,~ sum and difference frequency components of the modu -

Iating’’slgnal frequency and the fundamental and dd harmonim of

the carrier frequencv. The output amplitude will be aconstant

times the modulating signal amplitude. AnV amplitude variations

in the carrier signal will not appear in the output.

lcaO’OuT

SIGNAL

IVPUT

BIAS

7(+)

4(-)

\,so2

1[+) 0GAINADJuST

Iv,, lo~

FIGURE 24 – TYPICAL MODULATOR CIRCUIT

Ik lk

-m

)

51 $O.lfi: 2n3

—“c 0.1 fiF

GARRIER~} -8 6

INPUT 1MC1596G

●

Vs 9

MODULATING ●-V.

SIGNAL

INPUT 10k()10

t15

—4)

CARRIER NULL ●-a Vdc =

VEE

INOTE :Pin number references pertain to this de”ice when packaged in ametal can. To ascertain the corresponding pin

numbers for elastic or ceramic Dackaoed devices refer to the first Daqe of this SPeCifiCati OrT sheet.

@MOTOROLA Semiconductor Products Inc.

OPERATIONS INFORMATION (continued)

The linear signal handling capabilities of adifferential amplifier

are well defined. With no emitter degeneration, the maximum

input voltage for linear operation is approximately 25 mV peak.

Since the upper differential amplifier has its emitters internally

connected, this voltage applies to the carrier input port for all

conditions.

Since the lower differential amplifier has provisions for an

external emitter resistance, its linear signal handling range mav be

adjusted by the user. The maximum input voltage for linear op-

eration mav be approximated from the following expression:

()(

V=15 RE)volts peak.

This expression may be used to compute the minimum value of

RE for agiven input voltage amplitude.

FIGURE 25 – TABLE 1

VOLTAGE GAIN AND OUTPUT FREQUENCIES

Carrier Input IApproximate IOutput Signal

Signal (Vc) Volmge Gain Frequency I

RLVC

Low-level dc fM

2(RE +2re) (~)

High-level dc IRL

RE +2re IfM I

The gain from the modulating signal input port to the output is

the MC1596/MC1496gain parameter which is most often of interest

to the designer. This gain has significance onlv when the lower

differential amplifier is operated in alinear rode, but this includes

most applications of the device.

As previously mentioned, the upper quad differentiali~,rn~$$fier

may be operated either in alinear or asaturated mod%, %Q,~*Ski-

mate gain expressions have been developed for \#e ,h~i~$596/

MC1496 for alow-level modulating signal input an~i~~:$t,$’llowing

carrier input conditions: *“:3 ‘\?\$,

,~.: >,,:))>’.

~${y>!.$,‘*}.

1)Low-level dc ,.~” ~

.,.? ?%$(-~”’

2) High-level dc “t:~;,,t<~?

,:!>.

3) Low-level ac ‘>:-:~>:*;\

..?’.>’$..,

,,.?. ‘%i

4) High-level ac .tt’.>y *,~

“./:;.},~i,~;>

,:, ,.,,

Vc is Ca@V~ Inp&t V~ltage. “.’

2. When ~~$~sput signal contains multiple frequencies,

the$~~~~~$%pression given is for the output amplitude of

$~h~..pf.~]he two desired outputs, fc IfM and fc –‘M.

3. .*fi+$ g%n expressions are for asingle-ended output. For

~,,$ ~~,ifferential output connection, mu Itiply each expres-

.,.}.*::,,

,.,~,> sion by two.

,:,, ~$,t,~{,,

~.,\,.&\

0.637 RL7. K=Boltzmann’s Constant, T=temperature in degrees

High-level ac fc ~f M;,<-;+;*, “Kelvin, q=the charge on an electron.

RE+2re 5fc +Q(6?..” ‘:;&.

,x..$:.}~“~.,?,){......!. KT

... ,>’,.‘,:::

..Q)..?\‘\y,\. —s 26 mV at room temperature

::, ,;Je,:

.~>,., ‘;,,),$!

Double sideband suppressed,td~~~~~{$i% ovulation is the basic

application of the MCI 596/%1 4%. The suggested circuit for

this application is shown ~n tfi~x>~ont page of this data sheet.

Insome application:~$~~+mav be necessary to operate the

MC1596/MCl 496 with ~,”3$~~&dc supply voltage instead of dual

supplies. Figure 2G~$Q,@s’2 balanced modulator designed for

operation with a$io.~ ~?’~ Vdc supply. Performance of this cir-

.)!... ,$‘,.,

cuit is similar to+~,h,~~,:~F.khedual supply modulator.

~\.a,*

.<a%,.,\.y).

AM Modula~r f’<:+”

....};..,,,;, ,.,~,!,8

The.,$$fr&Ji,$”Yhown in Figure 27 mav be used as an amplitude

mod~latq~~wlth aminor modification.

~~~+~q~ is required to shift from suppressed carrier to AM

opera~n is to adjust the carrier null potentiometer for the proper

amoun% of carrier insertion in the output signal.

However, the suppressed carrier null circuitrv as shown in

Figure 27 does not have sufficient adjustment range. Therefore,

the modulator may be modified for AM operation by changing

two resistor values in the null circuit as shown in Figure 28.

Product Detector

The MC1596/MC1496 makes an excellent SSB product detec-

tor (see Figure 29).

@MOTOROLA

This product detector has asensitivity of 3.0 microvolt and a

dynamic range of 90 dB when operating at an intermediate fre-

quencv of 9MHz.

The detector is broadband for the entire high frequency range.

For operation at very low intermediate frequencies down to 50

kHz the 0.1 #F capacitors on pins 7and 8should be increased to

1.0 #F. Also, the output filter at pin 9can be tailored to a

specific intermediate frequencv and audio amplifier input im-

pedance.

As in all applications of the MC1596/MC1496, the emitter

resistance between pins 2and 3may be increased or decreased to

adjust circuit gain, sensitivity, and dynamic range.

This circuit may also be used as an AM detector bv introducing

carrier signal at the carrier input and an AM signal at the SSB

input.

The carrier signal mav be derived from the intermediate fre-

quency signal or generated locally. The carrier signal may be in-

troduced with or without modulation, provided its level is

sufficiently high to saturate the upper quad differential amplifier.

If the carrier signal is modulated, a 300 mV(rms) input level is

recommended.

Semiconductor Products Inc.

—

APPLICATIONS INFORMATION (continued)

Doubly Balanced Mixer Phase Detection and FM Detection

The MC1 596/MC 1496 mav be used as a doublv balanced The MCI 596/MC 1496 will function as a phase detector. High-

mixer with either broadband or tuned narrow band input and level input signals are introduced at both inputs. When botM~nputs

output networks. are at the same frequency the MCI 596/M C1496 will ~~w~.an

The local oscillator signal is introduced at the carrier input output which is afunction of the phase difference$:m~~~the

port with arecommended amplitude of 100 mV(rms). two input signals. ‘1$3

Figure 30 shows amixer with abroadband input and atuned ‘$*,

An FMdetector mav be constructed bv usi~~,?k~~wse detec-

Output. tor principle. Atuned circuit is added at oT~,,@$tWe inputs to

cauw the two input signals to vary in pha~d~’t’?:,$finction of fre-

Frequency Doubler quencv. The MC1596/MC1496 will then pkw’~~san output which

,,,;t’..,‘.>:~s..\.\*

The MCI 596/MC1496 will operate as a frequencv doubler bv is afunction of the input signal frequen~;+~,,~ ~.C~

introducing the same frequencv at both input ports. \t}~\ .,t,

~.,~kt,.$.

Figures 31 and 32 show abroadband frequencv doubler and a.$,

‘::?+ -~~

tuned output .verv high frequencv (VHF) doubler, respectively. \<(:l},:::;\kL

~-t$,.

...~,>,‘:’\.

y*.$,$,$<

~~ti:~”>,? $.,,

NOTE :Pin number references pertain to this de”ice when packaged in ametal can. TO aS&@~~$& the corresponding pin

“>,.*. ,,,..

~,,;,+,. ,~:,.

numbers for plastic or ceramic packaged devices refer to the first page of this s*Y*@tion sheet,

,!..

‘!$

,)>.!/$:~j>

..*\\.,,w.$,$$,

.8..*,>!

,.+*4sy, $~<:.

.,. .,

TYPICAL APPLICATION& ‘J\,,,:;}

.,. .

!$]s,,\.,t\

FIGURE 26 – BALANCED MODULATOR \...,,,\

x~:~:,,

(+12 Vdc SINGLE SUPPLY) Ff&$~RE 27 – BALANCED MODULATOR-DEMODULATOR

CARRIER

lk 820 Vcc

1.3k lk

T1/ m

I . ,

3k ,,.;,

3k ., 51 ~Ql uF, *W3 3,;;

iINPUT _=IQ.1UF I86- 86

1MC1596G

MC1496G

TT..

WI”

Vcc

●+12 Vdc

INPUT’ .-1MC1496G

~s 14 9 .I

MO:l{~~T: NG ●-Vo

INPUT 750 )

t15 6.8 k

—(VEE

CARRIER AOJUST -8 Vdc =

—

CARRIER

INPuT ~

300 mv(rms]

SSB INPUT

FIGURE 29 – PRODUCT DETECTOR

(+12 Vdc SINGLE SUPPLY)

820 1.3k (

O.1MF

O.l UF

+12Vdc

lk 10 ~F OUTPUT

*o.::510s:’ok

@MOTOROLA Semiconductor Products Inc.

TYPICAL APPLICATIONS (continued)

FIGURE 30 – DOUBLY BALANCED MIXER

(BROADBAND INPUTS,9.O MHz TUNED OUTPUT)

Vcc

lk Ik

—

fluOl ,.F

LOCAL

OSCILLAi !;R O~01JF

,go ,,,”[r,,, ~, 1MC1496G

RF INPuT 9

()

51 10

=NULL AOJUST1 vEE &

●.8V((,-

LI =44 TURNSAWG XO 28 ENAMELEOWIBE ivOUNO

ONMICROMETALS TYPE 446 TO RUIO CORE

FIGURE 31 – LOW-FREQUENCY DOUBLER

Vcc

7‘~2 Vd,

LI =1 TURNAWG

NO 18WlRE,7/32”10

FREQUENCY ~BALANCED MODULATOR SPECTRUM

fc CARRIER FUNDAMENTAL fc+nfs FUNDAMENTAL CARRIER SIDEBAND HARMONICS

fs MO DULATING SIGNAL nfc CARRIER HARMONICS

fc+fs FUNDAMENTAL CARRIER SIOEBANDS nfcinfs CARRIER HARMONIC SIDEBANDS

INOTE: Pi” number references pertain to this device when packaged in ametal can. To ascertain thecorrespond; ng pin

numbers for plastic or ceramic packaged devices refer to the first page of this specification sheet.

@MOTOROLA Semiconductor Products Inc.

—

THERMAL INFORMATION

—@MOTOROLA Semiconductor Products Inc.

—

OUTLINE DIMENSIONS

Motorola reserves the right to make changes w!thout further not!ce to any products here!n to Improve rehablllty, funct!on or design Motorola does

not assume any I(ability ar!slng out of the application or use of any product or C!rcult described here!n, neither does (t convey any license under Its

patent rights nor the rights of others Motorola and @are registered trademarks of Motorola, Inc Motorola, Inc IS an Equal Employment Oppotiunlty/

Affirmative Action Employer

nMOTOROLA Semiconductor Producfs Inc.

BOX 20912 ●PHOENIX, ARIZONA 85036 ●ASUBSIDIARY OF MOTOROLA INC. —

L893-!O PR1hTED IN “s. ,-88 LWER,AL .,,”, .,638, ,,,,, y,,,h,

—