A42L2604S-45 - AMIC Technology, Corp.

A42L2604 Series

Preliminary 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE

PRELIMINARY (June, 2002, Version 0.3) AMIC Technology, Inc.

Document Title

4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE

Revision History

Rev. No. History Issue Date Remark

0.0 Initial issue June 13, 2001 Preliminary

0.1 Modify symbol HE dimensions in TSOP 24L package information July 10, 2001

0.2 Add -45 grade and modify the AC, DC data November 30, 2001

Add -U type spec.

0.3 Modify DC data and all parts guarantee self-refresh mode June 10, 2002

A42L2604 Series

Preliminary 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE

PRELIMINARY (June, 2002, Version 0.3) 1 AMIC Technology, Inc.

Features

n Organization: 4,194,304 words X 4 bits

n Part Identification

- A42L2604 (2K Ref.)

n Single 3.3V power supply/built-in VBB generator

n Low power consumption

- Operating: 80mA (-45 max)

- Standby: 1.0mA (TTL), 1.5mA (CMOS),

350µA (Self-refresh current)

n High speed

- 45/50 ns RAS access time

- 20/22 ns column address access time

- 12/13 ns CAS access time

- 18/20 ns EDO Page Mode Cycle Time

n Industrial operating temperature range: -40°C to +85°C

for -U

n Fast Page Mode with Extended Data Out

n 2K Refresh Cycle in 32ms

n Read-modify-write, RAS -only, CAS -before-RAS ,

Hidden refresh capability

n TTL-compatible, three-state I/O

n JEDEC standard packages

- 300mil, 24/26-pin SOJ

- 300mil, 24/26-pin TSOP type II package

General Description

The A42L2604 is a new generation randomly accessed

memory for graphics, organized in a 4,194,304-word by

4-bit configuration. This product can execute Write and

Read operation via CAS pin.

The A42L2604 offers an accelerated Fast Page Mode

Pin Configuration

nn SOJ nn TSOP

VCC

I/O

CAS

I/O

VSS

A42L2604S

RAS

A10

VCC

VSS

26 VCC

I/O

CAS

I/O

VSS

A42L2604V

RAS

A10

VCC

VSS

cycle with a feature called Extended Data Out (EDO).

This allow random access of up to 2048(2K Ref.) words

within a row at a 56/50 MHz EDO cycle, making the

A42L2604 ideally suited for graphics, digital signal

processing and high performance computing systems.

Pin Descriptions

Symbol Description

A0 – A10 Address Inputs (2K product)

I/O0 - I/O3 Data Input/Output

RAS Row Address Strobe

CAS Column Address Strobe

Write Enable

OE Output Enable

VCC 3.3V Power Supply

VSS Ground

NC No Connection

A42L2604 Series

PRELIMINARY (June, 2002, Version 0.3) 2 AMIC Technology, Inc.

Selection Guide

Symbol Description -45 -50 Unit

tRAC Maximum RAS Access Time 45 50 ns

tAA Maximum Column Address Access Time 20 22 ns

tCAC Maximum CAS Access Time 12 13 ns

tOEA Maximum Output Enable (OE) Access Time 12 13 ns

tRC Minimum Read or Write Cycle Time 76 84 ns

tPC Minimum EDO Cycle Time 18 20 ns

Functional Description

The A42L2604 reads and writes data by multiplexing an

22-bit address into a 11-bit(2K) row and column address.

RASand CAS are used to strobe the row address and the

column address, respectively.

A Read cycle is performed by holding the WE signal high

during RAS/CAS operation. A Write cycle is executed by

holding the WE signal low during RAS /CAS operation;

the input data is latched by the falling edge of WE or

CAS, whichever occurs later. The data inputs and outputs

are routed through 4 common I/O pins, with RAS, CAS,

WE and OE controlling the in direction.

EDO Page Mode operation all 2048(2K) columns within a

selected row to be randomly accessed at a high data rate.

A EDO Page Mode cycle is initiated with a row address

latched by RAS followed by a column address latched by

CAS . While holding RAS low, CAS can be toggled to

strobe changing column addresses, thus achieving shorter

cycle times.

The A42L2604 offers an accelerated Fast Page Mode

cycle through a feature called Extended Data Out, which

keeps the output drivers on during the CAS precharge

time (tcp). Since data can be output after CAS goes high,

the user is not required to wait for valid data to appear

before starting the next access cycle. Data-out will remain

valid as long as RAS and OE are low, and WE is high;

this is the only characteristic which differentiates Extended

Data Out operation from a standard Read or Fast Page

Read.

A memory cycle is terminated by returning both RAS and

CAS high. Memory cell data will retain its correct state by

maintaining power and accessing all 2048(2K)

combinations of the 11-bit(2K) row addresses, regardless

of sequence, at least once every 32ms through any RAS

cycle (Read, Write) or RAS Refresh cycle (RAS -only,

CBR, or Hidden). The CBR Refresh cycle automatically

controls the row addresses by invoking the refresh counter

and controller.

Power-On

The initial application of the VCC supply requires a 200 µs

wait followed by a minimum of any eight initialization cycles

containing a RAS clock. During Power-On, the VCC

current is dependent on the input levels of RAS and CAS.

It is recommended that RAS and CAStrack with VCC or

be held at a valid VIH during Power-On to avoid current

surges.

A42L2604 Series

PRELIMINARY (June, 2002, Version 0.3) 3 AMIC Technology, Inc.

Block Diagram

Recommended Operating Conditions (Ta = 0°C to +70°C or -40°C to +85°C)

Symbol Description Min. Typ. Max. Unit

VCC Power Supply 3.0 3.3 3.6 V

VSS Input High Voltage 0 0 0 V

VIH Input High Voltage 2.0 - VCC + 0.3 V

VIL Input Low Voltage -0.5 - 0.8 V

Control

Clocks VBB Generator

Refresh Timer

Refresh control

Refresh Counter

Row Address Buffer

Col. Address Buffer

Row Decoder

Column Decoder

Memory Array

4,194,304 X 4

Cells

Sense Amps & I/O

Data in

Buffer

Data out

Buffer

Vcc

Vss

RAS

CAS

A0~A10

I/O0

I/O3

A42L2604 Series

PRELIMINARY (June, 2002, Version 0.3) 4 AMIC Technology, Inc.

Truth Table

Function RAS CAS WE OE Address I/Os

Standby H H X X X High-Z

Read: Word L L H L Row/Col. Data Out

Read L L H L Row/Col. Data Out

Write: Word (Early) L L L X Row/Col. Data In

Write (Early) L L L X Row/Col. Data In

Read-Write L L H→L L→H Row/Col. Data Out → Data In

EDO-Page-Mode Read: Hi-Z

-First cycle

-Subsequent Cycles

H→L

Row/Col.

Col.

Data Out

EDO-Page-Mode Write (Early)

-First cycle

-Subsequent Cycles

H→L

Row/Col.

Col.

Data In

EDO-Page-Mode Read-Write

-First cycle

-Subsequent Cycles

H→L

L→H

Row/Col.

Col.

Data Out → Data In

Hidden Refresh Read L→H→L L H L Row/Col. Data Out

Hidden Refresh Write L→H→L L L X Row/Col. Data In → High-Z

RAS-Only Refresh L H X X Row High-Z

CBR Refresh H→L L X X X High-Z

Self Refresh H→L L H X X High-Z

A42L2604 Series

PRELIMINARY (June, 2002, Version 0.3) 5 AMIC Technology, Inc.

Absolute Maximum Ratings*

Input Voltage (Vin) . . . . . . . . . . . . . . . . . . . -0.5V to +4.6V

Output Voltage (Vout) . . . . . . . . . . . . . . . . -0.5V to +4.6V

Power Supply Voltage (VCC) . . . . . . . . . . . -0.5V to +4.6V

Operating Temperature (TOPR) . . . . . . . . . . 0°C to +70°C

Storage Temperature (TSTG) . . . . . . . . . -55°C to +150°C

Soldering Temperature X Time (TSOLDER) . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C X 10sec

Power Dissipation (PD) . . . . . . . . . . . . . . . . . . . . . . . . 1W

Short Circuit Output Current (Iout) . . . . . . . . . . . . . 50mA

Latch-up Current . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA

*Comments

Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to this device.

These are stress ratings only. Functional operation of

this device at these or any other conditions above

those indicated in the operational sections of these

specification is not implied or intended. Exposure to

the absolute maximum rating conditions for extended

periods may affect device reliability.

DC Electrical Characteristics (VCC = 3.3V ± 0.3V, VSS = 0V, Ta = 0°C to +70°C or -40°C to +85°C)

-45 -50

Symbol Parameter Min. Max. Min. Max. Unit Test Conditions Notes

IIL Input Leakage Current -5 +5 -5 +5 µA 0V ≤ Vin ≤ Vin + 0.3V

Pins not under

Test = 0V

IOL Output Leakage Current -5 +5 -5 +5 µA DOUT disabled,

0V ≤ Vout ≤ + VCC

ICC1 Operating Power Supply

Current - 80 - 75 mA RAS,UCAS,LCAS and

Address cycling; tRC = min. 1, 2

ICC2 TTL Standby Power

Supply Current - 1.5 - 1.5 mA RAS=UCAS=LCAS=VIH

ICC3 Average Power

Supply Current,

RAS Refresh Mode

- 80 - 75 mA RAS and Address cycling,

UCAS=LCAS = VIH,

tRC = min.

ICC4 EDO Page Mode

Average Power

Supply Current

- 80 - 75 mA RAS = VIL,

UCAS,LCAS and Address

cycling; tPC = min.

1, 2

ICC5 CAS-before-RAS

Refresh Power

Supply Current

- 80 - 75 mA RAS, UCAS and LCAS

cycling; tRC = min. 1

ICC6 CMOS Standby Power

Supply Current - 1.0 - 1.0 mA RAS=UCAS=LCAS =

VCC - 0.2V

ICC7 Self Refresh Mode

Current - 350 - 350 µA RAS=CAS≤VSS+0.2V

All other input high levels are

VCC-0.2V or input low levels

are VSS +0.2V

VOH 2.4 - 2.4 - V IOUT = -2.0mA

VOL Output Voltage - 0.4 - 0.4 V IOUT =2.0mA

A42L2604 Series

PRELIMINARY (June, 2002, Version 0.3) 6 AMIC Technology, Inc.

AC Characteristics (VCC = 3.3V ± 0.3V, VSS = 0V, Ta = 0°C to +70°C or -40°C to +85°C)

Test Conditions:

Input timing reference level: VIH/VIL=2.0V/0.8V

Output reference level: VOH/VOL=2.0V/0.8V

Output Load: 2TTL gate + CL (50pF)

Assumed tT=2ns

-45 -50

# Std

Symbol

Parameter Min. Max. Min. Max.

Unit

Notes

tT Transition Time (Rise or Fall) 1 50 1 50 ns 4, 5

1 tRC Random Read or Write Cycle Time 76 - 84 - ns

2 tRP RAS Precharge Time 27 - 30 - ns

3 tRAS RAS Pulse Width 45 10K 50 10K ns

4 tCAS CAS Pulse Width 7 10K 8 10K ns

5 tRCD RAS to CAS Delay Time 10 33 11 37 ns 6

6 tRAD RAS to Column Address Delay Time 8 25 9 28 ns 7

7 tRSH CAS to RAS Hold Time 7 - 8 - ns

8 tCSH CAS Hold Time 35 - 37 - ns

9 tCRP CAS to RAS Precharge Time 5 - 5 - ns

10 tASR Row Address Setup Time 0 - 0 - ns

11 tRAH Row Address Hold Time 7 - 8 - ns

12 tCLZ CAS to Output in Low Z 3 - 3 - ns 8

13 tRAC Access Time from RAS - 45 - 50 ns 6,7

14 tCAC Access Time from CAS - 12 - 13 ns 6, 12

15 tAA Access Time from Column Address - 20 - 22 ns 7, 12

16 tOEA Access Time from OE - 12 - 13 ns

17 tAR Column Address Hold Time from RAS 40 - 45 - ns

18 tRCS Read Command Setup Time 0 - 0 - ns

19 tRCH Read Command Hold Time 0 - 0 - ns 9

A42L2604 Series

PRELIMINARY (June, 2002, Version 0.3) 7 AMIC Technology, Inc.

AC Characteristics (continued) (VCC = 3.3V ± 0.3V, VSS = 0V, Ta = 0°C to +70°C or -40°C to +85°C)

Test Conditions:

Input timing reference level: VIH/VIL=2.0V/0.8V

Output reference level: VOH/VOL=2.0V/0.8V

Output Load: 2TTL gate + CL (50pF)

Assumed tT=2ns

-45 -50

# Std

Symbol

Parameter Min. Max. Min. Max.

Unit

Notes

20 tRRH Read Command Hold Time Reference to RAS 0 - 0 - ns 9

21 tRAL Column Address to RAS Lead Time 20 - 22 - ns

22 TCOH Output Hold After CAS Low 2 - 3 - ns

23 tOFF Output Buffer Turn-Off Delay Time - 2 - 3 ns 8, 10

24 tASC Column Address Setup Time 0 - 0 - ns

25 tCAH Column Address Hold Time 7 - 8 - ns

26 tOES OE Low to CAS High Set Up 10 - 10 - ns

27 tWCS Write Command Setup Time 0 - 0 - ns 11

28 tWCH Write Command Hold Time 7 - 8 - ns 11

29 tWCR Write Command Hold Time to RAS 40 - 45 - ns

30 tWP Write Command Pulse Width 7 - 8 - ns

31 tRWL Write Command to RAS Lead Time 12 - 13 - ns

32 tCWL Write Command to CAS Lead Time 7 - 8 - ns

33 tDS Data-in setup Time 0 - 0 - ns

34 tDH Data-in Hold Time 7 - 8 - ns

35 tDHR Data-in Hold Time to RAS 40 - 45 - ns

36 tRWC Read-Modify-Write Cycle Time 104 - 114 - ns

37 tRWD RAS to WE Delay Time (Read-Modify-Write) 59 - 65 - ns 11

38 tCWD CAS to WE Delay Time (Read-Modify-Write) 26 - 28 - ns 11

39 tAWD Column Address to WE Delay Time

(Read-Modify-Write) 34 - 37 - ns 11

A42L2604 Series

PRELIMINARY (June, 2002, Version 0.3) 8 AMIC Technology, Inc.

AC Characteristics (continued) (VCC = 3.3V ± 0.3V, VSS = 0V, Ta = 0°C to +70°C or -40°C to +85°C)

Test Conditions:

Input timing reference level: VIH/VIL=2.0V/0.8V

Output reference level: VOH/VOL=2.0V/0.8V

Output Load: 2TTL gate + CL (50pF)

Assumed tT=2ns

-45 -50

# Std

Symbol

Parameter Min. Max. Min. Max.

Unit

Notes

40 tOEH OE Hold Time from WE 7 - 8 - ns

41 tOEP OE High Pulse Width 5 - 5 - ns

42 tPC Read or Write Cycle Time (EDO Page) 18 - 20 - ns 13

43 tCPA Access Time from CAS Precharge

(EDO Page) - 21 - 23 ns 12

44 tCP CAS Precharge Time 7 - 8 - ns

45 tPCM EDO Page Mode RMW Cycle Time 46 - 50 - ns

46 tCRW EDO Page Mode CAS Pulse Width

(RMW) 35 - 38 - ns

47 tRASP RAS Pulse Width (EDO Page) 45 200K 50 200K ns

48 tCSR CAS Setup Time ( CAS-before-RAS) 5 - 5 - ns 3

49 tCHR CAS Hold Time ( CAS-before-RAS) 10 - 10 - ns 3

50 tRPC RAS to CAS Precharge Time 10 - 10 - ns

51 tOEZ Output Buffer Turn-off Delay from OE - 2 - 3 ns 8

52 tRASS RAS pulse width (C-B-

self refresh) 100 - 100 - µs

53 tRPS RAS precharge time (C-B-

self refresh) 76 - 84 - ns

54 tCHS CAShold time (C-B-

self refresh) -50 - -50 - ns

A42L2604 Series

PRELIMINARY (June, 2002, Version 0.3) 9 AMIC Technology, Inc.

Notes:

1. ICC1, ICC3, ICC4, and ICC5 depend on cycle rate.

2. ICC1 and ICC4 depend on output loading. Specified values are obtained with the outputs open.

3. An initial pause of 200µs is required after power-up followed by any 8 RAS cycles before proper device operation is

achieved. In the case of an internal refresh counter, a minimum of 8 CAS -before-RAS initialization cycles instead of 8

RAS cycles are required. 8 initialization cycles are required after extended periods of bias without clocks.

4. AC Characteristics assume tT = 2ns. All AC parameters are measured with a load equivalent to two TTL loads and

50pF, VIL (min.) ≥ GND and VIH (max.) ≤ VCC.

5. VIH (min.) and VIL (max.) are reference levels for measuring timing of input signals. Transition times are measured

between VIH and VIL.

6. Operation within the tRCD (max.) limit insures that tRAC (max.) can be met. tRCD (max.) is specified as a reference

point only. If tRCD is greater than the specified tRCD (max.) limit, then access time is controlled exclusively by tCAC.

7. Operation within the tRAD (max.) limit insures that tRAC (max.) can be met. tRAD (max.) is specified as a reference

point only. If tRAD is greater than the specified tRAD (max.) limit, then access time is controlled exclusively by tAA.

8. Assumes three state test load (5pF and a 500Ω Thevenin equivalent).

9. Either tRCH or tRRH must be satisfied for a read cycle.

10. tOFF (max.) defines the time at which the output achieves the open circuit condition; it is not referenced to output

voltage levels.

11. tWCS, tWCH, tRWD, tCWD and tAWD are not restrictive operating parameters. They are included in the data sheet

as electrical characteristics only. If tWCS ≥ tWCS (min.) and tWCH ≥ tWCH (min.), the cycle is an early write cycle

and data-out pins will remain open circuit, high impedance, throughout the entire cycle. If tRWD ≥ tRWD (min.) , tCWD ≥

tCWD (min.) and tAWD ≥ tAWD (min.), the cycle is a read-modify-write cycle and the data out will contain data read from

the selected cell. If neither of the above conditions is satisfied, the condition of the data out at access time is

indeterminate.

12. Access time is determined by the longer of tAA or tCAC or tCPA.

13. tASC ≥ tCP to achieve tPC (min.) and tCPA (max.) values.

A42L2604 Series

PRELIMINARY (June, 2002, Version 0.3) 10 AMIC Technology, Inc.

Word Read Cycle

RAS(3)

RP(2)

RC(1)

CRP(9)

CSH(8)

RCD(5)

RSH(7)

CAS(4)

ASR(10)

CRP(9)

RAH(11)

ASC(24)

CAH(25)

RAD(6)

RAL(21)

RCH(19)

RRH(20)

AR(17)

RCS(18)

OEA(16)

RAC(13)

AA(15)

CAC(14)

CLZ(12)

OEZ(51)

OFF(23)

High-Z

: High or Low

Valid Data-out

Row Address Column Address

I/O

Address

CAS

RAS

A42L2604 Series

PRELIMINARY (June, 2002, Version 0.3) 11 AMIC Technology, Inc.

Word Write Cycle (Early Write)

RAS(3)

RP(2)

RC(1)

CRP(9)

CSH(8)

RCD(5)

RSH(7)

CAS(4)

ASR(10)

CRP(9)

RAH(11)

ASC(24)

CAH(25)

RAD(6)

RAL(21)

WCH(28)

: High or Low

Row Address Column Address

I/O

Address

CAS

RAS

AR(17)

CWL(32)

RWL(31)

WP(30)

WCS(27)

Valid Data-in

DS(33)

DH(34)

WCR(29)

DHR(35)

A42L2604 Series

PRELIMINARY (June, 2002, Version 0.3) 12 AMIC Technology, Inc.

Word Write Cycle (Late Write)

RAS(3)

RP(2)

RC(1)

CRP(9)

CSH(8)

RCD(5)

RSH(7)

CAS(4)

ASR(10)

CRP(9)

ASC(24)

CAH(25)

RAD(6)

RAL(21)

Row Address Column Address

Address

CAS

RAS

AR(17)

CWL(32)

RWL(31)

WP(30)

RAH(11)

OEH(40)

DS(33)

DH(34)

I/O

: High or Low

High-Z Vaild Data-in

WCR(29)

DHR(35)

A42L2604 Series

PRELIMINARY (June, 2002, Version 0.3) 13 AMIC Technology, Inc.

Word Read-Modify-Write Cycle

RAS(3)

RP(2)

RWC(36)

CRP(9)

CSH(8)

RCD(5)

RSH(7)

ASR(10)

CRP(9)

RAH(11)

CAH(25)

RAD(6)

Row Address Column AddressAddress

CAS

RAS

AR(17)

RWL(31)

ASC(24)

CWL(32)

AWD(39)

CWD38)

RWD(37)

WP(30)

OEA(16)

OEZ(51)

CLZ(12)

CAC(14)

AA(15)

RAC(13)

DS(33)

DH(34)

High-Z Data-out Data-in

: High or Low

I/O

OEH(40)

RCS(18)

A42L2604 Series

PRELIMINARY (June, 2002, Version 0.3) 14 AMIC Technology, Inc.

EDO Page Mode Word Read Cycle

RASP(47)

RP(2)

RAS

CAS

CAS(4)

RCD(5)

CSH(8)

CRP(9)

PC(42)

RSH(7)

ASR(10)

RAH(11)

RAD(6)

AR(16)

RAL(21)

Address

I/O

: High or Low

ASC(24)

CP(44)

CSH(8)

ASC(24)

CAH(25)

Row Column Column Column

RCH(19)

RCS(18)

RCH(25)

RCS(18)

CAH(25)

RRH(20)

OFF(23)

OEZ(51)

AA(15)

OEA(16)

OEP(41)

CAC(14)

CLZ(12)

OEZ(51)

CPA(43)

OES(26)

AA(15)

OEA(16)

COH(22)

CAC(14)

RAC(13)

CAC(14)

CLZ(12)

Data-out Data-out Data-out

A42L2604 Series

PRELIMINARY (June, 2002, Version 0.3) 15 AMIC Technology, Inc.

EDO Page Mode Early Word Write Cycle

RASP(47)

RP(2)

RAS

CAS

CAS(4)

CP(44)

CAS(4)

CP(44)

CAS(4)

RCD(5)

CSH(8)

CRP(9)

PC(42)

RSH(7)

ASR(10)

RAH(11)

RAD(6)

ASC(24)

CAH(25)

ASC(24)

CAH(25)

ASC(24)

RAL(21)

Row Column ColumnAddress

CWL(32)

WCH(28)

WCS(27)

Column

CWL(32)

WCH(28)

WCS(27)

WCH(28)

CWL(32)

RWL(31)

WP(30)

DH(34)

DS(33)

DH(34)

DS(33)

DH(34)

Data-in Data-in Data-in

I/O

: High or Low

A42L2604 Series

PRELIMINARY (June, 2002, Version 0.3) 16 AMIC Technology, Inc.

EDO Page Mode Word Read-Modify-Write Cycle

RASP(47)

RAS

CRW(46)

CP(44)

CRW(46)

CP(44)

CRW(46)

RCD(5)

CSH(8)

CRP(9)

PCM(45)

RSH(7)

RP(2)

ASR(10)

RAH(11)

RAD(6)

ASC(24)

CAH(25)

ASC(24)

CAH(25)

ASC(24)

CAH(25)

RAL(21)

RCS(18)

CWD(38)

RWD(37)

CWL(32)

CWD(38)

CWL(32)

CWD(38)

CWL(32)

RWL(31)

OEA(16)

WP(30)

AWD(39)

CAC(14)

AA(15)

RAC(13)

OEZ(51)

DS(33)

AA(15)

CPA(43)

DH(34)

OEZ(51)

DS(33)

DH(34)

OEZ(51)

DS(33)

DH(34)

AA(15)

CPA(43)

CLZ(12)

High-Z

: High or Low

I/O

Address

CAS

Data-out Data-in Data-out Data-in Data-out Data-in

Row Column Column Column

OEH(40)

A42L2604 Series

PRELIMINARY (June, 2002, Version 0.3) 17 AMIC Technology, Inc.

RAS Only Refresh Cycle

CAS Before RAS Refresh Cycle

RAS(3)

RP(2)

RC(1)

RAS

CRP(9)

RPC(50)

ASR(10)

RAH(11)

Address

: High or Low

Row

Note: WE, OE = Don't care.

CAS

RAS(3)

RP(2)

RC(1)

RAS

RP(2)

RPC(50)

PC(44)

CSR(48)

CHR(49)

OFF(23)

I/O

CAS

High-Z

: High or LowNote: WE, OE, Address = Don't care.

A42L2604 Series

PRELIMINARY (June, 2002, Version 0.3) 18 AMIC Technology, Inc.

Hidden Refresh Cycle (Word Read)

tRAS(3) tRP(2)

tRC(1)

tCRP(9)

tAR(17)

tRCD(5)

tASR(10)

tCRP(9)

tASC(24)

tCAH(25)

tRAD(6)

A0~A8

UCAS

RAS

tRAH(11)

tRRH(20)tRCS(18)

I/O

: High or Low

High-Z

tRAS(3) tRP(2)

tCHR(49)

tRC(1)

tRSH(7)

tRAL(21)

tCAC(14) tOFF(23)

tAA(15)

tCLZ(12)

tRAC(13)

Row Column

Valid Data-out

LCAS

tOEZ(51)

tOEA(16)

A42L2604 Series

PRELIMINARY (June, 2002, Version 0.3) 19 AMIC Technology, Inc.

Hidden Refresh Cycle (Early Word Write)

RAS(3)

RP(2)

RC(1)

CRP(9)

AR(17)

RCD(5)

ASR(10)

CRP(9)

ASC(24)

CAH(25)

RAD(6)

Address

RAS

RAH(11)

: High or Low

RAS(3)

RP(2)

CHR(49)

RC(1)

RSH(7)

RAL(21)

Row Column

WCS(27)

WCH(28)

WP(30)

DS(33)

DH(34)

Valid Data-in

I/O

CAS

A42L2604 Series

PRELIMINARY (June, 2002, Version 0.3) 20 AMIC Technology, Inc.

EDO Page Mode Read-Early-Write Cycle (Pseudo Read-Modify-Write)

RAS

: High or Low

I/O

Address

CAS

RP(2)

RASP(47)

CRP(9)

CSH(8)

RCD(5)

CAS(4)

CP(44)

CAS(4)

CP(44)

CAS(4)

CPR(9)

RSH(7)

PC(42)

Row Column Column

RAL(21)

CAH(25)

ASC(24)

CAH(25)

ASC(24)

CAH(25)

ASC(24)

ASR(10)

RAH(11)

RAD(6)

Column

RCS(18)

RCH(19)

WCS(27)

WCH(28)

Data-out Data-out Data-in

DH(34)

DS(33)

AA(15)

CAP(43)

CAC(14)

COH(22)

AA(15)

RAC(13)

CAC(14)

OEA(16)

A42L2604 Series

PRELIMINARY (June, 2002, Version 0.3) 21 AMIC Technology, Inc.

Self Refresh Mode

n Self Refresh Mode.

a. Entering the Self Refresh Mode:

The A42L2604 Self Refresh Mode is entered by using CAS before RAS cycle and holding RAS and CAS signal “low”

longer than 100µs.

b. Continuing the Self Refresh Mode:

The Self Refresh Mode is continued by holding RAS “low” after entering the Self Refresh Mode.

It does not depend on CAS being “high” or “low” after entering the Self Refresh Mode continue the Self Refresh Mode.

c. Exiting the Self Refresh Mode:

The A42L2604 exits the Self Refresh Mode when the RAS signal is brought “high”.

RASS(52)

RP(2)

CRP(9)

CSR(48)

RPC(50)

RAS

RPS(53)

CHS(54)

ASR(10)

CP(44)

OFF(23)

A0 ~ A10

: High or Low

High-Z

I/O

~ I/O

UCAS

LCAS

ROW COL

Note: WE, OE = Don't care.

A42L2604 Series

PRELIMINARY (June, 2002, Version 0.3) 22 AMIC Technology, Inc.

Capacitance (f = 1MHz, Ta = Room Temperature, VCC = 3.3V ± 10%)

Symbol Signals Parameter Max. Unit Test Conditions

CIN1 A0 – A10 5 pF Vin = 0V

CIN2 RAS,CAS,

WE, OE

Input Capacitance 7 pF Vin = 0V

CI/O I/O0 - I/O3 I/O Capacitance 7 pF Vin = Vout = 0V

Ordering Codes

Package

RAS

Access Time 45ns 50ns Refresh Cycle Self-Refresh

SOJ 24/26L (300mil) A42L2604S-45 A42L2604S-50 2K Yes

TSOP 24/26L type II (300mil) A42L2604V-45 A42L2604V-50 2K Yes

TSOP 24/26L type II (300mil) A42L2604V-45U A42L2604V-50U 2K Yes

Note: -U is for industrial operating temperature range.

A42L2604 Series

PRELIMINARY (June, 2002, Version 0.3) 23 AMIC Technology, Inc.

Package Information

SOJ 24/26L (300mil) Outline Dimensions unit: inches/mm

1324

19 18

1 6 7

Pin 1 Identifier

- y -

Seating Plane 0.004

Dimensions in inches Dimensions in mm

Symbol Min Nom Max Min Nom Max

A - - 0.140 - - 3.56

A1 0.070 0.080 0.090 1.78 2.03 2.29

A2 0.095 0.100 0.105 2.41 2.54 2.67

b 0.016 0.018 0.022 0.41 0.46 0.56

b2 0.026 0.028 0.032 0.66 0.71 0.81

C 0.008 0.010 0.014 0.20 0.25 0.36

D - 0.675 0.686 - 17.15 17.42

E 0.327 0.337 0.347 8.31 8.56 8.81

E1 0.295 0.300 0.305 7.49 7.62 7.75

E2 0.245 0.265 0.285 6.22 6.73 7.24

e 0.044 0.050 0.056 1.12 1.27 1.42

S - - 0.048 - - 1.22

θ 0° - 10° 0° - 10°

Notes:

1. The maximum value of dimension D includes end flash.

2. Dimension E1 does not include resin fins.

3. Dimension E2 is for PC Board surface mount pad pitch design

reference only.

4. Dimension S includes end flash.

A42L2604 Series

PRELIMINARY (June, 2002, Version 0.3) 24 AMIC Technology, Inc.

Package Information

TSOP 24/26L (TYPE II) (300mil) Outline Dimensions unit: inches/mm

S B

121

0.010

A2A1

L1L

Dimensions in inches

Dimensions in mm

Symbol Min Nom Max Min Nom Max

A - - 0.047 - - 1.20

A1 0.002 - - 0.05 - -

A2 0.037 0.039 0.041 0.95 1.00 1.05

B 0.012 0.016 0.020 0.30 0.40 0.50

c - 0.005 - - 0.127 -

D 0.671 0.675 0.679 17.04 17.14 17.24

E 0.298 0.300 0.302 7.57 7.62 7.67

e - 0.050 - - 1.27 -

HE 0.355 0.363 0.371 9.02 9.22 9.42

L - 0.031 - - 0.80 -

L1 0.016 0.020 0.024 0.40 0.50 0.60

S - 0.037 - - 0.95 -

y - - 0.004 - - 0.10

θ 0° - 5° 0° - 5°

Notes:

1. Dimension D&E do not included interlead flash.

2. Dimension B does not included dambar protrusion / intrusion.

3. Dimension S includes end flash.