MAC97A6
4Q Triac
15 September 2018 Product data sheet
1. General description
Planar passivated very sensitive gate four quadrant triac in a SOT54 plastic package intended to
be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger
circuits.
2. Features and benefits
Direct interfacing to logic level ICs
Direct interfacing to low power gate drivers and microcontrollers
High blocking voltage capability
Planar passivated for voltage ruggedness and reliability
Triggering in all four quadrants
Very sensitive gate
3. Applications
General purpose low power phase control
General purpose low power switching
Solid-state relay
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDRM repetitive peak off-
state voltage
- - 400 V
IT(RMS) RMS on-state current full sine wave; Tlead ≤ 50 °C; Fig. 1;
Fig. 2; Fig. 3
- - 0.6 A
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5
- - 8 AITSM non-repetitive peak on-
state current
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
- - 8.8 A
Tjjunction temperature - - 125 °C
Static characteristics
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
- 1 5 mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
- 2 5 mA
IGT gate trigger current
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
- 2 5 mA
WeEn Semiconductors MAC97A6
4Q Triac
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Product data sheet 15 September 2018 2 / 12
Symbol Parameter Conditions Min Typ Max Unit
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
- 4 7 mA
IHholding current VD = 12 V; Tj = 25 °C; Fig. 9 - 1 10 mA
VTon-state voltage IT = 0.85 A; Tj = 25 °C; Fig. 10 - 1.4 1.9 V
Dynamic characteristics
dVD/dt rate of rise of off-state
voltage
VDM = 268 V; Tj = 110 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; Fig. 12
30 45 - V/µs
dVcom/dt rate of change of
commutating voltage
VD = 400 V; Tj = 50 °C; dIcom/dt = 0.3 A/
ms; IT = 0.84 A; gate open circuit
- 5 - V/µs
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 T2 main terminal 2
2 G gate
3 T1 main terminal 1
123
TO-92 (SOT54)
sym051
T1
G
T2
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
MAC97A6 TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54
WeEn Semiconductors MAC97A6
4Q Triac
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Product data sheet 15 September 2018 3 / 12
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state
voltage
- 400 V
IT(RMS) RMS on-state current full sine wave; Tlead ≤ 50 °C; Fig. 1; Fig. 2;
Fig. 3
- 0.6 A
full sine wave; Tj(init) = 25 °C; tp = 20 ms;
Fig. 4; Fig. 5
- 8 AITSM non-repetitive peak on-
state current
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - 8.8 A
I2t I2t for fusing tp = 10 ms; SIN - 0.32 A²s
IG = 20 mA; T2+ G+ - 50 A/µs
IG = 20 mA; T2+ G- - 50 A/µs
IG = 20 mA; T2- G- - 50 A/µs
dIT/dt rate of rise of on-state
current
IG = 20 mA; T2- G+ -10 A/µs
IGM peak gate current - 1 A
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.1 W
Tstg storage temperature -40 150 °C
Tjjunction temperature - 125 °C
tsurge (S)
10-3 10110-2
003aaa041
1
2
3
IT(RMS)
(A)
0
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
aaa-009816
Tlead (°C)
0 15010050
0.4
0.2
0.6
0.8
IT(RMS)
(A)
0
Fig. 2. RMS on-state current as a function of lead
temperature; maximum values
WeEn Semiconductors MAC97A6
4Q Triac
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Product data sheet 15 September 2018 4 / 12
α = 180°
0
0.4
0.8
1.2
00.2 0.4 0.6 0.8
IT(RMS) (A)
Ptot
30°
60°
90°
120°
003aaa036
(W)
con
duction
an
g
l
,
(
d
e
g
r
e
es
)
for
m
f
ac
r
a
3
0
6
0
9
0
120
180
2.816
1.967
1.570
1.329
1.1
1
0
α
α
α
α = conduction angle
a = form factor = IT(RMS) / IT(AV)
Fig. 3. Total power dissipation as a function of RMS on-
state current; maximum values
10
8
6
4
2
0
1 10 102103
ITSM
(A)
n
003aaa038
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function
of the number of sinusoidal current cycles; maximum
values
003aaa040
102
10
103
ITSM
(A)
1
tp (s)
10-5 10-1
10-2
10-4 10-3
ITSM
t
IT
Tp
dlT/dt limit
T2- G+ quadrant
tp ≤ 20 ms
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
WeEn Semiconductors MAC97A6
4Q Triac
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Product data sheet 15 September 2018 5 / 12
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
full cycle; Fig. 6 - - 60 K/WRth(j-lead) thermal resistance
from junction to lead half cycle - - 80 K/W
Rth(j-a) thermal resistance
from junction to
ambient free air
printed circuit board mounted: lead
length = 4 mm
- 150 - K/W
003aaa029
tp (s)
10-5 1 1010-1
10-2
10-4 10-3
102
10
103
Zth(j-a)
(K/W)
1
tp
P
t
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse width
WeEn Semiconductors MAC97A6
4Q Triac
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Product data sheet 15 September 2018 6 / 12
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
- 1 5 mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
- 2 5 mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
- 2 5 mA
IGT gate trigger current
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
- 4 7 mA
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C
- 1 10 mA
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
- 5 10 mA
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
- 1 10 mA
ILlatching current
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8
- 2 10 mA
IHholding current VD = 12 V; Tj = 25 °C; Fig. 9 - 1 10 mA
VTon-state voltage IT = 0.85 A; Tj = 25 °C; Fig. 10 - 1.4 1.9 V
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
- 0.9 1.5 VVGT gate trigger voltage
VD = 400 V; IT = 0.1 A; Tj = 110 °C;
Fig. 11
0.1 0.7 - V
IDoff-state current VD = 400 V; Tj = 110 °C - 3 100 µA
Dynamic characteristics
dVD/dt rate of rise of off-state
voltage
VDM = 268 V; Tj = 110 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; Fig. 12
30 45 - V/µs
dVcom/dt rate of change of
commutating voltage
VD = 400 V; Tj = 50 °C; dIcom/dt = 0.3 A/
ms; IT = 0.84 A; gate open circuit
- 5 - V/µs
tgt gate-controlled turn-on
time
ITM = 1 A; VD = 400 V; IG = 25 mA; dIG/
dt = 5 A/µs
- 2 - µs
WeEn Semiconductors MAC97A6
4Q Triac
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Product data sheet 15 September 2018 7 / 12
Tj (°C)
-60 14090-10 40
003aaa030
1
2
3
0
(1)
(2)
(3)
(4)
(1)
(2)
(3)
(4)
IGT
IGT(25°C)
(1) T2- G+
(2) T2- G-
(3) T2+ G-
(4) T2+ G+
Fig. 7. Normalized gate trigger current as a function of
junction temperature
Tj (°C)
-60 14090-10 40
003aaa031
1
2
3
0
IL
IL(25°C)
Fig. 8. Normalized latching current as a function of
junction temperature
Tj (°C)
-60 14090-10 40
003aaa032
1.0
0.5
1.5
2.0
0
IH
IH(25°C)
Fig. 9. Normalized holding current as a function of
junction temperature
0
0.4
0.8
1.2
1.6
00.8 1.6 2.4
003aaa033
IT
(A)
VT (V)
(1) (3)
(2)
Vo = 1.45 V; Rs = 0.1875 Ω
(1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
voltage
WeEn Semiconductors MAC97A6
4Q Triac
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Product data sheet 15 September 2018 8 / 12
Tj (°C)
-60 14090-10 40
003aaa039
0.8
0.4
1.2
1.6
0
VGT(25°C)
VGT
Fig. 11. Normalized gate trigger voltage as a function of junction temperature
003aaa034
Tj (°C)
0 12510050 7525
102
10
103
dVD/dt
(V/µs)
1
Fig. 12. Critical rate of rise of off-state voltage as a function of junction temperature; typical values
WeEn Semiconductors MAC97A6
4Q Triac
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Product data sheet 15 September 2018 9 / 12
10. Package outline
Fig. 13. Package outline TO-92 (SOT54)
WeEn Semiconductors MAC97A6
4Q Triac
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Product data sheet 15 September 2018 10 / 12
11. Legal information
Data sheet status
Document
status [1][2]
Product
status [3]
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.ween-semi.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. WeEn Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local WeEn
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
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shall an agreement be valid in which the WeEn Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Disclaimers
Limited warranty and liability — Information in this document is believed
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accuracy or completeness of such information and shall have no liability for
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limitation specifications and product descriptions, at any time and without
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
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no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using WeEn Semiconductors products, and WeEn
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customer’s applications and products planned, as well as for the planned
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WeEn Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
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Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). WeEn does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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In the event that customer uses the product for design-in and use in
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customer (a) shall use the product without WeEn Semiconductors’ warranty
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Semiconductors’ standard warranty and WeEn Semiconductors’ product
specifications.
WeEn Semiconductors MAC97A6
4Q Triac
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Product data sheet 15 September 2018 11 / 12
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between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
WeEn Semiconductors MAC97A6
4Q Triac
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Product data sheet 15 September 2018 12 / 12
12. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Limiting values............................................................. 3
8. Thermal characteristics............................................... 5
9. Characteristics.............................................................. 6
10. Package outline.......................................................... 9
11. Legal information..................................................... 10
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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Date of release: 15 September 2018