CR03AM-16 Thyristor Low Power Use REJ03G0355-0100 Rev.1.00 Aug.20.2004 Features * IT (AV) : 0.3 A * VDRM : 800 V * IGT : 100 A * Non-Insulated Type * Glass Passivation Type Outline TO-92 2 1. Cathode 2. Anode 3. Gate 3 1 3 2 1 Applications Leakage protector, timer, and gas igniter Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 DC off-state voltageNote1 Rev.1.00, Aug.20.2004, page 1 of 7 Symbol Voltage class 16 Unit VRRM VRSM VR(DC) VDRM VDSM VD(DC) 800 960 640 800 960 640 V V V V V V CR03AM-16 Parameter RMS on-state current Average on-state current Symbol IT (RMS) IT (AV) Ratings 0.47 0.3 Unit A A ITSM 20 A I2 t 1.6 A2s Surge on-state current I2t for fusing Peak gate power dissipation PGM 0.5 Average gate power dissipation PG (AV) 0.1 Peak gate forward voltage VFGM 6 Peak gate reverse voltage VRGM 6 Peak gate forward current IFGM 0.3 Junction temperature Tj - 40 to +110 Storage temperature Tstg - 40 to +125 Mass -- 0.23 Notes: 1. With gate to cathode resistance RGK = 1 k. W W V V A C C g Conditions Commercial frequency, sine half wave 180 conduction, Ta = 47C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Electrical Characteristics Parameter Symbol Rated value Min. Typ. Max. Unit Test conditions Repetitive peak reverse current Repetitive peak off-state current IRRM IDRM -- -- -- -- 0.1 0.1 mA mA On-state voltage VTM -- -- 1.8 V Gate trigger voltage VGT -- -- 0.8 V Tj = 25C, VD = 6 V, IT = 0.1 ANote2 Gate non-trigger voltage VGD 0.2 -- -- V Tj = 110C, VD = 1/2 VDRM, RGK = 1 k Gate trigger current IGT 1 -- 100 A Tj = 25C, VD = 6 V, IT = 0.1 ANote2 Holding current IH -- 1.5 3 mA Tj = 25C, VD = 12 V, RGK = 1 k -- -- 180 C/W Thermal resistance Rth (j-a) Notes: 2. IGT, VGT measurement circuit. A1 3V DC IGS IGT A3 A2 RGK 1 1k Switch 2 60 TUT V1 6V DC VGT Switch 1 : IGT measurement Switch 2 : VGT measurement (Inner resistance of voltage meter is about 1k) Rev.1.00, Aug.20.2004, page 2 of 7 Tj = 110C, VRRM applied Tj = 110C, VDRM applied, RGK = 1 k Ta = 25C, ITM = 4 A, instantaneous value Junction to ambient CR03AM-16 Performance Curves 101 7 5 3 2 Rated Surge On-State Current 20 Ta = 25C Surge On-State Current (A) On-State Current (A) Maximum On-State Characteristics 100 7 5 3 2 10-1 7 5 3 2 7 5 3 2 10-2 PG(AV) = 0.1W VGT = 0.8V (Tj = 25C) IGT = 100A (Tj = 25C) VGD = 0.2V IFGM = 0.3A 0 1 2 5 710 2 3 5 7 10 2 3 5 7 10 2 3 5 7 10 2 3 5 Gate Trigger Voltage (V) 2 2 3 4 5 7 101 2 3 4 5 7 102 103 7 5 3 2 Typical Example 102 7 5 3 2 101 7 5 3 2 100 -40 -20 0 20 40 60 80 100 120 Junction Temperature (C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 0.9 Distribution 0.7 0.6 6 4 Gate Current (mA) 1.0 0.8 x 100 (%) PGM = 0.5W VFGM = 6V -1 8 Gate Trigger Current vs. Junction Temperature 10-1 7 5 3 2 10 Gate Characteristics Gate Trigger Current (Tj = tC) Gate Trigger Current (Tj = 25C) 100 12 Conduction Time (Cycles at 60Hz) Typical Example IGT (25C) = 35A 0.5 0.4 0.3 0.2 0.1 0 -60 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (C) Rev.1.00, Aug.20.2004, page 3 of 7 Transient Thermal Impedance (C/W) Gate Voltage (V) 7 5 3 2 14 On-State Voltage (V) 102 101 16 0 100 10-2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 7 5 3 2 18 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 200 180 160 140 120 100 80 60 40 20 0 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 Time (s) CR03AM-16 Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Half Wave) 160 = 30 0.3 0.2 360 0.1 0 Resistive, inductive loads 0 0.1 0.2 0.4 0.3 120 360 Resistive, inductive loads Natural convection 100 80 60 40 = 30 90 180 60 120 20 0 0.5 0 0.1 0.2 0.3 0.5 0.4 Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) 60 = 30 0.4 120 90 160 180 0.3 0.2 0.1 360 0 Ambient Temperature (C) Average Power Dissipation (W) 140 Average On-State Current (A) 0.5 Resistive loads 0 0.1 0.2 0.3 0.4 140 120 360 Resistive loads Natural convection 100 80 60 40 20 0 0.5 = 30 60 90 120 180 0 0.1 0.2 0.3 0.4 0.5 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Rectangular Wave) Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) 0.5 Average Power Dissipation (W) Ambient Temperature (C) 0.4 180 120 90 60 0.4 = 30 270 180 120 90 DC 60 0.3 0.2 360 0.1 0 Resistive, inductive loads 0 0.1 0.2 0.3 0.4 Average On-State Current (A) Rev.1.00, Aug.20.2004, page 4 of 7 0.5 160 Ambient Temperature (C) Average Power Dissipation (W) 0.5 Resistive, inductive loads Natural convection 140 360 120 = 30 60 100 90 120 180 270 DC 80 60 40 20 0 0 0.1 0.2 0.3 0.4 Average On-State Current (A) 0.5 140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 160 Typical Example Tj = 110C 140 120 100 80 60 40 20 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Gate to Cathode Resistance (k) Breakover Voltage vs. Rate of Rise of Off-State Voltage Holding Current vs. Junction Temperature RGK = 1k 180 160 140 120 100 Tj = 25C 80 40 Breakover Voltage vs. Gate to Cathode Resistance Junction Temperature (C) 200 60 Breakover Voltage (RGK = rk) Breakover Voltage (RGK = 1k) RGK = 1k Typical Example Tj = 110C Holding Current (mA) 160 20 102 7 5 3 2 101 7 5 3 2 RGK = 1k Distribution Typical Example IGT(25C) = 35A 100 7 5 3 2 10-1 -60 -40 -20 0 20 40 60 80 100 120 140 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Junction Temperature (C) Holding Current vs. Gate to Cathode Resistance Repetitive Peak Reverse Voltage vs. Junction Temperature 500 400 300 Typical Example IGT(25C) IH(1k) 10A 1.0mA #1 26A 1.1mA #2 #1 #2 200 100 VD = 12V, Tj = 25C 0 10-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 Gate to Cathode Resistance (k) Rev.1.00, Aug.20.2004, page 5 of 7 x 100 (%) Rate of Rise of Off-State Voltage (V/s) Repetitive Peak Reverse Voltage (Tj = tC) Repetitive Peak Reverse Voltage (Tj = 25C) Holding Current (RGK = rk) Holding Current (RGK = 1k) x 100 (%) Breakover Voltage (dv/dt = vV/s) Breakover Voltage (dv/dt = 1V/s) x 100 (%) Breakover Voltage (Tj = tC) Breakover Voltage (Tj = 25C) x 100 (%) Breakover Voltage vs. Junction Temperature x 100 (%) CR03AM-16 160 Typical Example 140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 Junction Temperature (C) CR03AM-16 Gate Trigger Current (A) Gate Trigger Current vs. Gate Current Pulse Width 104 7 5 4 3 2 Typical Example IGT(DC) # 1 16A # 2 65A #1 103 7 5 4 3 2 #2 Tj = 25C 102 100 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (s) Rev.1.00, Aug.20.2004, page 6 of 7 CR03AM-16 Package Dimensions TO-92 EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material Conforms Conforms 0.23 Cu alloy 5.0 max 11.5 min 5.0 max 4.4 1.25 1.25 3.6 1.1 Circumscribed circle 0.7 Symbol Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Straight type Vinyl sack 500 Type name Lead form Vinyl sack 500 Type name - Lead forming code Form A8 Taping 2000 Type name - TB Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 7 of 7 Standard order code example CR03AM-16 CR03AM-16-A6 CR03AM-16-TB Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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