ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
1/4/03
0.5
7.62
7.0
6.0
1.2
10.16
9.16
7.0
6.0
7.62
1.2
13°
Max
0.5
2.54
0.5 0.26
0.5
3
4
1
5
8
2
1
3 4
6
Dimensions in mm
HIGH DENSITY
PHOTOTRANSISTOR OPTICALLY
COUPLED ISOLATORS
7.0
6.0
1.2
7.62
3.0
0.5
0.26
2.54
0.5 0.26
13°
Max
3.0
13°
Max
3.35
4.0
3.0
3.0
20.32
19.32 4.0
3.0
4.0
3.0
3.35
3.35
2.54
36
4 5
27
14
15
18
7.62
6.62
2 5
16
13
12
11
6
10
7
9
IL1, IL2, IL5, IL74
ILD1, ILD2, ILD5, ILD74
ILQ1, ILQ2, ILQ5, ILQ74
IL1
IL2
IL5
IL74
ILD1
ILD2
ILD5
ILD74
ILQ1
ILQ2
ILQ5
ILQ74
OPTION G
7.62
SURFACE MOUNT
OPTION SM
10.16
0.26
DB91088m-AAS/A6
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
10.46
9.86
0.6
0.1 1.25
0.75
APPROVALS
ll UL recognised, File No. E91231
IL* Package 'FF' (marked I_ _ _ FF)
ILD*/ILQ* Package 'GG' (marked I_ _ _ GG)
'X' SPECIFICATION APPROVALS
Add 'X' after part number
ll VDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
ll BSI approved - Certificate No. 8001
DESCRIPTION
The IL*, ILD*, ILQ* series of optically coupled
isolators consist of infrared light emitting diodes
and NPN silicon photo transistors in space
efficient dual in line plastic packages.
FEATURES
lOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
ll Three package types
lHigh Current Transfer Ratio (50% min)
lHigh Isolation Voltage (5.3kVRMS ,7.5kVPK )
lHigh BVCEO (70V min)
IL2, ILD2, ILQ2, IL5, ILD5, ILQ5
APPLICATIONS
lComputer terminals
lIndustrial systems controllers
lMeasuring instruments
lSignal transmission between systems of
different potentials and impedances
Input Forward Voltage (VF)1.2 1.65 VIF = 50mA
Reverse Current (IR)10 µA VR = 4V
Output Collector-emitter Breakdown (BVCEO)
IL2, ILD2, ILQ2, IL5, ILD5, ILQ5 70 VIC = 1mA , ( Note 2 )
IL1, ILD1, ILQ1, IL74, ILD74, ILQ74 50 VIC = 1mA , ( Note 2 )
Emitter-collector Breakdown (BVECO)6VIE = 100µA
Collector-emitter Dark Current (ICEO)50 nA VCE = 10V
Coupled Current Transfer Ratio (CTR) (Note 2)
IL1, ILD1, ILQ1 20 300 %10mA IF , 10V VCE
IL2, ILD2, ILQ2 100 500 %10mA IF , 10V VCE
IL5, ILD5, ILQ5 50 400 %10mA IF , 10V VCE
IL74, ILD74, ILQ74 12.5 %16mA IF , 5V VCE
Saturated Current Transfer Ratio
IL1, ILD1, ILQ1 75 %10mA IF , 0.4V VCE
IL2, ILD2, ILQ2 170 %10mA IF , 0.4V VCE
IL5, ILD5, ILQ5 100 %10mA IF , 0.4V VCE
IL74, ILD74, ILQ74 12.5 %16mA IF , 0.5V VCE
Collector-emitter Saturation Voltage,VCE (SAT) 0.4 V16mA IF , 2mA IC
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
Input to Output Isolation Voltage VISO 7500 VPK See note 1
Input-output Isolation Resistance RISO 5x10 10 ΩVIO = 500V (note 1)
Output Rise Time tr 2µsIF = 10mA
Output Fall Time tf 2µsVCC = 5V, RL = 75Ω
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Note 1Measured with input leads shorted together and output leads shorted together.
Note 2Special Selections are available on request. Please consult the factory.
1/4/03
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -40°C to + 125°C
Operating Temperature -25°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse Voltage 6V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
IL2,ILD2,ILQ2,IL5,ILD5,ILQ5 70V
IL1,ILD1,ILQ1,IL74,ILD74,ILQ74 50V
Emitter-collector Voltage BVECO 6V
Power Dissipation 150mW
POWER DISSIPATION
Total Power Dissipation 170mW
(derate linearly 2.67mW/°C above 25°C)
DB91088m-AAS/A6
DB91088m-AAS/A6
1/4/03
50
Ambient temperature TA ( °C )
150
0
200
Ambient temperature TA ( °C )
Collector power dissipation PC (mW)
60
30
20
10
0
40
50
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
Ambient temperature TA ( °C )
100
0
0.5
1.0
1.5 IF = 10mA
VCE = 10V
Forward current IF (mA)
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
-30 0 25 50 75 100 125
-30 0 25 50 75 100 125
-30 0 25 50 75 100 1 2 5 10 20 50
0
0.4
0.6
0.8
1.0
1.2
0.2
1.4
VCE = 10V
TA = 25°C
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Forward Current
Forward current IF (mA)
Ambient temperature TA ( °C )
0
0.5
1.0
1.5 IF = 10mA
VCE = 0.4V
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
-30 0 25 50 75 100
1 2 5 10 20 50
0
1.2
1.6
2.0
2.4
2.8
VCE = 0.4V
TA = 25°C
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Forward Current
Forward current IF (mA)
0.8
0.4
01/04/03 DB91088m-AAS/A6
Fig.1 Forword Current Fig.2 Collector Power Dissiption
vs. Ambient Tempera ture
Fig.4 Forward Current vs. Forward
Fig.5 Current Transfer Rati o vs.
Forward Curren t Fig.6 Coll ector Current vs.
Collector-emitter Voltage
F
FCE
F
F
0-25
Ta= 75 C
50 C 25 C
0 C
-25 C
V = 5V
Ta= 25 C
CE Ta= 25 C
I = 30mA
Pc(MAX.)
5mA
F
10mA
20mA
vs. Ambient Tempera tute
Collector-emitter voltage V (V)
Forward voltage V (V)
Ambient temperature Ta ( C)Ambient temperature Ta ( C)
Forward current I (mA )
Forward current I (mA )
Collector Power dissipation Pc (mW)
Forward current I (mA )
Current transfer ratio CTR (%)
Collector current Ic (mA)
Fig.3 Co ll e c tor-emi tter Sa tura ti o n
Voltage vs. For ward Current
F
CE
Ic= 0.5mA
1mA
3mA
7mA
5mA
Ta= 25 C
Collecotr-emitter saturation voltage
V (sat) (V)
Forward current I (mA)
Voltage
o
o
o
O
o
o
oo
o
o
0 25 50 75 100 125
10
20
30
40
50
60
0
50
100
150
200
0
1
0
015
1
2
3
4
5
6
0.5 1.0 1.5 2.0 2.5 3.0
2
5
10
20
50
100
200
500
01002 5 10 20 50
20
40
60
80
100
120
140
160
180
200
123456789
10
20
30
105
5
15
25
-25 0 5025 75 100 125
01/04/03 DB91088m-AAS/A6
R = 10k
L1k 100
tr
tf
td
ts
Fig.8 Collector-emitter Saturation Voltag e
Fig.9 Collector Dark Cur rent vs.
Ambient Temperature Fig.10 Res ponse Time vs. Load
Fig.11 Frequency Respo nse
L
CEO
0-30
CE
V = 5V
Ic= 2mA
T a= 25 C
CE
I = 5mA
V = 5V
CE
FF
Ic= 1mA
I = 20mA
CE
V = 2V
Ic= 2mA
T a= 25 C
vs. Ambient Te mperature
Ambient temperature Ta ( C)
Load resistance R (k )
Ambient temperature Ta ( C)
Ambient temperature Ta ( C)
Frequency f (kHz)
R esponse time ( s)
Relative cur rent transfer ratio (%)
Collector dark current I (A)
Voltage gain Av (dB)
Coll e ctor-emitte r sa tu r a tion volta ge
V (sat) (V)
-10
o
o
oo
o
0 25 50 75 100
50
100
150
-25
0 0 255075100
10 -25 0.2
0.050 25 50 75 100
10
10
10
10
10
10
-9
-8
-7
-6
-5
-11
0.1 0.2 0.5 1 2 5 10
0.5
1
2
5
10
20
50
100
200
500
0.5
-10
0
1000
Resistance
Fig.7 Rela tive Current Transfer Rat io
vs. Ambient Te mperature
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
CE
V = 20V
1 2 5 10 20 100 500
-5
-20
-15
Test Circuit for Response Time
Test Circuit for Frequency Response
Input RD
Input
ts
Output
R
D
R
Output
Vcc
RL
tr
Vcc
L
td
tf
10%
90%
Output
