NTE2511 (NPN) & NTE2512 (PNP)
Silicon Complementary Transistors
High Frequency Video Output for HDTV
Features:
DHigh Gain Bandwidth Product: fT = 800MHz Typ.
DLow Reverse Transfer Capacitance and Excellent HF Response:
NTE2511: Cre = 2.9pF
NTE2512: Cre = 4.6pF
Applications:
DVery High–Definition CRT Display
DVideo Output
DColor TV Chroma Output
DWide–Band Amp
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO 80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Emitter Voltage, VCEO 60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter base Voltage, VEBO 4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous 500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, PC
TA = +25°C 1.2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC = +25°C 10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICBO VCB = 60V, IE = 0 – – 0.1 µA
Emitter Cutoff Current IEBO VEB = 2V, IC = 0 – – 1.0 µA
DC Current Gain hFE VCE = 10V, IC = 50mA 100 – 320
VCE = 10V, IC = 400mA 20 – –
Gain Bandwidth Product fTVCE = 10V, IC = 100mA – 800 – MHz
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Emitter Saturation Voltage
NTE2511 VCE(sat) IC = 100mA, IB = 10mA – – 0.6 V
NTE2512 – – 0.8 V
Base Emitter Saturation Voltage VBE(sat) IC = 100mA, IB = 10mA – – 1.0 V
Collector Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 80 – – V
Collector Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞60 – – V
Emitter Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 4– – V
Output Capacitance
NTE2511 Cob VCB = 30V, f = 1MHz –3.4 –pF
NTE2512 –5.2 –pF
Reverse Transfer Capacitance
NTE2511 Cre VCB = 30V, f = 1MHz –2.9 –pF
NTE2512 –4.6 –pF
.330 (8.38)
Max
.450
(11.4)
Max
.655
(16.6)
Max
.130 (3.3)
Max
.175
(4.45)
Max
.030 (.762) Dia
.090 (2.28)
.118 (3.0)
Dia
ECB
