NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead (Pb) Free Product - RoHS Compliant BPX 81 Wesentliche Merkmale Features * Speziell geeignet fur Anwendungen im Bereich von 450 nm bis 1100 nm * Hohe Linearitat * Einstellige Zeilenbauform aus klarem Epoxy * Gruppiert lieferbar * Especially suitable for applications from 450 nm to 1100 nm * High linearity * One-digit array package of transparent epoxy * Available in groups Anwendungen Applications * Computer-Blitzlichtgerate * Miniaturlichtschranken fur Gleich- und Wechsellichtbetrieb * Industrieelektronik * Messen/Steuern/Regeln" * * * * Computer-controlled flashes Miniature photointerrupters Industrial electronics For control and drive circuits Typ Type Bestellnummer Ordering Code Fotostrom , Ee= 0.5 mW/cm2, = 950 nm, VCE = 5 V Photocurrent IPCE (mA) BPX 81 Q62702P0020 > 0.25 BPX 81-2/3 Q62702P3583 0.25...0.80 BPX 81-3 Q62702P0043S0003 0.40...0.80 BPX 81-3/4 Q62702P3584 BPX 81-4 Q62702P0043S0004 > 0.63 2007-03-30 > 0.40 1 BPX 81 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 80 C Kollektor-Emitterspannung Collector-emitter voltage VCE 35 V Kollektorstrom Collector current IC 50 mA Kollektorspitzenstrom, < 10 s Collector surge current ICS 200 mA Verlustleistung, TA = 25 C Total power dissipation Ptot 90 mW Warmewiderstand Thermal resistance RthJA 750 K/W 2007-03-30 2 BPX 81 Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max 850 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax 450 ... 1100 nm Bestrahlungsempfindliche Flache Radiant sensitive area A 0.11 mm2 Abmessung der Chipflache Dimensions of chip area LxB LxW 0.5 x 0.5 mm x mm Halbwinkel Half angle 18 Grad deg. Kapazitat Capacitance VCE = 0 V, f = 1 MHz, E = 0 CCE 7.5 pF Dunkelstrom Dark current VCE = 20 V, E = 0 ICEO 1 ( 50) nA 2007-03-30 3 BPX 81 Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit -2 -3 -4 IPCE IPCE 0.25...0.50 1.2 0.40...0.80 1.9 0.63 2.9 mA mA Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k tr , t f 5.5 6 8 s Kollektor-Emitter-Sattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3 Ee = 0.5 mW/cm2 VCEsat 150 150 150 mV Fotostrom, = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCE = 5 V 1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe. 1) IPCEmin is the min. photocurrent of the specified group. 2007-03-30 4 BPX 81 Relative Spectral Sensitivity Srel = f () Photocurrent IPCE = f (Ee), VCE = 5 V Total Power Dissipation Ptot = f (TA) Collector-Emitter Capacitance CCE = f (VCE), f = 1 MHz, E = 0 Dark Current ICEO = f (VCE), E = 0 100 % 90 Srel 80 70 60 50 40 30 20 10 0 400 500 600 700 800 nm 1100 900 1000 lambda Photocurrent IPCE/IPCE25o = f (TA), VCE = 5 V 8 10 pF 7 nA Cce 6 I CEO 1 5 4 3 0.1 2 1 0 1E-03 0.01 1E-02 1E-01 1E+00 1E+01 Vce Directional Characteristics Srel = f () 1E+02 0 V 5 10 15 20 25 30 V 35 V CE Dark Current ICEO = f (TA), VCE = 20 V, E = 0 10000 nA 1000 I CEO 100 10 1 0.1 0.01 -25 0 25 50 75 TA 2007-03-30 5 C 100 BPX 81 0.25 (0.010) 0.15 (0.006) 0 ... 5 0.7 (0.028) 0.6 (0.024) 3.6 (0.142) 3.2 (0.126) 3.0 (0.118) 0.5 (0.020) 0.4 (0.016) 3.5 (0.138) 2.4 (0.094) 2.1 (0.083) 1.9 (0.075) 1.7 (0.067) Chip position 2.7 (0.106) 2.5 (0.098) Mazeichnung Package Outlines 2.1 (0.083) 1.5 (0.059) A 2.54 (0.100) spacing 0.4 A Radiant sensitive area (0.4 x 0.4) 1.4 (0.055) 1.0 (0.039) Collector (BPX 81) Cathode (LD 261) 1) Detaching area for tools, flash not true to size. Approx. weight 0.03 g Mae in mm (inch) / Dimensions in mm (inch). 2007-03-30 6 GEOY6021 BPX 81 Lotbedingungen Soldering Conditions Wellenloten (TTW) TTW Soldering (nach CECC 00802) (acc. to CECC 00802) OHLY0598 300 C T 10 s 250 Normalkurve standard curve 235 C ... 260 C Grenzkurven limit curves 2. Welle 2. wave 200 1. Welle 1. wave 150 ca 200 K/s 2 K/s 5 K/s 100 C ... 130 C 100 2 K/s 50 Zwangskuhlung forced cooling 0 0 50 100 150 200 s 250 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-03-30 7