International Rectifier IRF634S HEXFET Power MOSFET PD-9.1005 Surface Mount Available in Tape & Reel D _ Dynamic dv/dt Rating Vpss = 250V Repetitive Avalanche Rated Fast Switching Rpsvon) = 0.450 . G Ease of Paralleling Simple Drive Requirements $ Ip =8.1A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The SMD-220 is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. SMD-220 Absolute Maximum Ratings Parameter Max. Units Ip @ Te = 25C Continuous Drain Current, Vas @ 10 V 8.4 Ip @ Te = 100C | Continuous Drain Current, Vas @ 10 V 5.1 A Ibm Pulsed Drain Current 32 Pp @ Tc =25C | Power Dissipation 74 Ww Pp @ Ta=25C_| Power Dissipation (PCB Mount)** 3.1 Linear Derating Factor 0.59 WPC Linear Derating Factor (PCB Mount)** 0.025 Ves Gate-to-Source Voltage +20 Vv Eas Single Pulse Avalanche Energy @ 300 mJ lar Avalanche Current 8.1 A Ear Repetitive Avalanche Energy 7.4 md dv/at Peak Diode Recovery dv/dt 48 Vins Ty, Tste Junction and Storage Temperature Range -55 to +150 : C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Min. Typ. Max. Units Rosc Junction-to-Case = _ 1.7 Raa Junction-to-Ambient (PCB mount)** = _ 40 Cw Roa Junction-to-Ambient - = 62 ** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.IRF634S Electrical Characteristics @ Ty = 25C (unless otherwise specified) Parameter Min. | Typ. | Max. | Units Test Conditions VieRypss Drain-to-Source Breakdown Voltage 250 | _ V__ | Vas=0V, Ip= 250A AVerypss/ATy| Breakdown Voltage Temp. Coefficient | 0.37 | | VC | Reference to 25C, Ip= imA Rosven) Static Drain-to-Source On-Resistance - | 045 | Q | Ves=10V, ID=5.1A Vesith) Gate Threshold Voltage 2.0 4.0 Vs | Vos=Ves, lp= 250A Os Forward Transconductance 1.6 = = S| Vps=50V, Ip=5.1A loss Drain-to-Source Leakage Current =f} 2) uy Vos=250V, Ves=0V _ _ 250 Vps=200V, Vas=0V, Ty=125C lass Gate-to-Source Forward Leakage = 100 nA Ves=20V Gate-to-Source Reverse Leakage _ | -100 Ves=-20V Qa Total Gate Charge = _ 4 [p=5.6A Qos Gate-to-Source Charge | | 65 | nC | Vps=200V Qoa Gate-to-Drain ("Miller") Charge _ 22 Vas=10V See Fig. 6 and 13 @ tdton) Turn-On Delay Time _ 9.6 _ Vop=125V tr Rise Time = 21 _ ng | o=8-64 ta(ott) Turn-Off Delay Time - 42 _ Re=12Q tr Fall Time _ 19 = Rp=22Q See Figure 10 Lo Internal Drain Inductance ~ 4.5 _ Ban (oem) nH | from package (= | Ls Internal Source Inductance | 75) and center of die contact 8 Ciss Input Capacitance | 770 | Ves=0V Coss Output Capacitance | 1909; PF | Vps= 25V Crsg Reverse Transfer Capacitance _ 52 _ f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. | Typ. | Max. | Units Test Conditions Is Continuous Source Current _ _ a4 MOSFET symbol 5 (Body Diode) , A showing the ism Pulsed Source Current _ _ 32 integral reverse g (Body Diode) p-n junction diode. s Vsp Diode Forward Voltage _ _ 2.0 Vs} Ty=25C, Is=8.1A, Vas=OV tre Reverse Recovery Time | 220 | 440 | ns_ | Ty=25C, Ir=5.6A Qn Reverse Recovery Charge _ 1.2 | 24 | pC |di/dt-100A/us @ ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lp) h Notes: , : @ Repetitive rating; pulse width limited by Isps8.1A, di/dt<120A/us, Vop<V(BR)Dss, max. junction temperature (See Figure 11) Tys150C Vpp=50V, starting Ty=25C, L=7.3mH Pulse width s 300 ps; duty cycle <2%. Re@=25Q, las=8.1A (See Figure 12)IRF634S E & = < < gS go 5 5 Oo Oo & = S 109 'g a Oo ae) 4.5V 2 20us PULSE WIDTH 20us WIDTH To = 25C Te = 150C i cee Vps, Drain-to-Source Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig 1. Typical Output C