VISHAY
DZ23-Series
Document Number 85765
Rev. 1.5, 08-Jul-04
Vishay Semiconductors
www.vishay.com
1
18110
12
3
Small Signal Zen e r Diodes, Dual
Features
• This diode is also available in other case styles
and configurations including: the dual diode com-
mon cathode configuration with type designation
AZ23, the single diode SOT-23 case with the type
desig nati on BZX 84C, and the singl e diod e
SOD-123 case with the type designation BZT52C.
• Dual Silicon Planar Zener Diodes, Common
Cathode
• The Zener voltages are graded according to the
international E 24 standard. Standard Zener volt-
age tolerance is ± 5 %. Replace "C" with "B" for
2 % tolerance.
• The parameters are valid for both diodes in one
case. ∆VZ and ∆rzj of the two diodes in one case is
≤ 5 %
Mechanical Da ta
Case: SOT-23 Plastic case
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13 " reel, (8 mm tape), 10 k/box
GS08 / 3 k per 7 " reel, (8 mm tape), 15 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Device on fiberglass substrate, see layout
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Device on fiberglass substrate, see layout
Parameter Test condition Symbol Value Unit
Power dissipation Ptot 3001) mW
Parameter Test condition Symbol Value Unit
Thermal resistance junction to ambient air RthJA 420 1) °C/W
Junction temperature Tj150 °C
Storage temperature range TS- 65 to + 150 °C
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2Document Number 85765
Rev. 1.5, 08-Jul-04
VISHAY
DZ23-Series
Vishay Semiconductors
Electrical Characteristics
1) Tested with pulses tp = 5 ms
Partnumber Marking
Code Zener Voltage Range1) Dynamic R esist ance Test
Current Temperature
Coefficient of Zener
Voltage
Reverse
Voltage
VZ @ IZrzj @
IZ = 5 mA,
f = 1 kHz,
rzj @
IZ = 1 mA,
f = 1 kHz,
IZαVZ @ IZ = 5 mA VR @
IR = 100
nA
VΩmA 10-4/°C V
min max min max
DZ23C2V7 V1 2.5 2.9 75 (<83) <500 5 -9 -4 -
DZ23C3V0 V2 2.8 3.2 80 (<95) <500 5 -9 -3 -
DZ23C3V3 V3 3.1 3.5 80 (<95) <500 5 -8 -3 -
DZ23C3V6 V4 3.4 3.8 80 (<95) <500 5 -8 -3 -
DZ23C3V9 V5 3.7 4.1 80 (<95) <500 5 -7 -3 -
DZ23C4V3 V6 4 4.6 80 (<95) <500 5 -6 -1 -
DZ23C4V7 V7 4.4 5 70 (<78) <500 5 -5 2 -
DZ23C5V1 V8 4.8 5.4 30 (<60) <480 5 -3 4 >0.8
DZ23C5V6 V9 5.2 6 10 (<40) <400 5 -2 6 >1
DZ23C6V2 V10 5.8 6.6 4.8 (<10) <200 5 -1 7 >2
DZ23C6V8 V11 6.4 7.2 4.5 (<8) <150 5 2 7 >3
DZ23C7V5 V12 7 7.9 4 (<7) <50 5 -3 7 >5
DZ23C8V2 V13 7.7 8.7 4.5 (<7) <50 5 4 7 >6
DZ23C9V1 V14 8.5 9.6 4.8 (<10) <50 5 5 8 >7
DZ23C10 V15 9.4 10.6 5.2 (<15) <70 5 5 8 >7.5
DZ23C11 V16 10.4 11.6 6 (<20) <70 5 5 9 >8.5
DZ23C12 V17 11.4 12.7 7 (<20) <90 5 6 9 >9
DZ23C13 V18 12.4 14.1 9 (<25) <110 5 7 9 > 10
DZ23C15 V19 13.8 15.6 11 (<30) <110 5 7 9 >11
DZ23C16 V20 15.3 17.1 13 (<40) <170 5 8 9.5 >12
DZ23C18 V21 16.8 19.1 18 (<50) <170 5 8 9.5 >14
DZ23C20 V22 18.8 21.2 20 (<50) <220 5 8 10 >15
DZ23C22 V23 20.8 23.3 25 (<55) <220 5 8 10 >17
DZ23C24 V24 22.8 25.6 28 (<80) <220 5 8 10 >18
DZ23C27 V25 25.1 28.9 30 (<80) <250 5 8 10 >20
DZ23C30 V26 28 32 35 (<80) <250 5 8 10 >22.5
DZ23C33 V27 31 35 40 (<80) <250 5 8 10 >25
DZ23C36 V28 34 38 40 (<90) <250 5 8 10 >27
DZ23C39 V29 37 41 50 (<90) <300 5 10 12 >29
DZ23C43 V30 40 46 60 (<100) <700 5 10 12 >32
DZ23C47 V31 44 50 70 (<100) <750 5 10 12 >35
DZ23C51 V32 48 54 70 (<100) <750 5 10 12 >38
VISHAY
DZ23-Series
Document Number 85765
Rev. 1.5, 08-Jul-04
Vishay Semiconductors
www.vishay.com
3
Electrical Characteristics
1) Tested with pulses tp = 5 ms
Partnumber Marking
Code Zener Voltage Range1) Dynamic Resistance Test
Current Temperature
Coefficient of Zener
Voltage
Reverse
Voltage
VZ @ IZrzj @
IZ = 5 mA,
f = 1 kHz,
rzj @
IZ = 1 mA,
f = 1 kHz,
IZαVZ @ IZ = 5 mA VR @
IR = 100
nA
VΩmA 10-4/°C V
min max min max
DZ23B2V7 V1 2.65 2.75 75 (<83) <500 5 -9 -4 -
DZ23B3V0 V2 2.94 3.06 80 (<95) <500 5 -9 -3 -
DZ23B3V3 V3 3.23 3.37 80 (<95) <500 5 -8 -3 -
DZ23B3V6 V4 3.53 3.67 80 (<95) <500 5 -8 -3 -
DZ23B3V9 V5 3.82 3.98 80 (<95) <500 5 -7 -3 -
DZ23B4V3 V6 4.21 4.39 80 (<95) <500 5 -6 -1 -
DZ23B4V7 V7 4.61 4.79 70 (<78) <500 5 -5 2 -
DZ23B5V1 V8 5 5.2 30 (<60) <480 5 -3 4 >0.8
DZ23B5V6 V9 5.49 5.71 10 (<40) <400 5 -2 6 >1
DZ23B6V2 V10 6.08 6.32 4.8 (<10) <200 5 -1 7 >2
DZ23B6V8 V11 6.66 6.94 4.5 (<8) <150 5 2 7 >3
DZ23B7V5 V12 7.35 7.65 4 (<7) <50 5 -3 7 >5
DZ23B8V2 V13 8.04 8.36 4.5 (<7) <50 5 4 7 >6
DZ23B9V1 V14 8.92 9.28 4.8 (<10) <50 5 5 8 >7
DZ23B10 V 15 9.8 10.2 5.2 (<15) <70 5 5 8 >7.5
DZ23B11 V 16 10.8 11.2 6 (<20) <70 5 5 9 >8.5
DZ23B12 V 17 11.8 12.2 7 (<20) <90 5 6 9 >9
DZ23B13 V 18 12.7 13.3 9 (<25) <110 5 7 9 >10
DZ23B15 V19 14.7 15.3 11 (<30) <110 5 7 9 >11
DZ23B16 V20 15.7 16.3 13 (<40) <170 5 8 0.5 >12
DZ23B18 V21 17.6 18.4 18 (<50) <170 5 8 0.5 >14
DZ23B20 V22 19.6 20.4 20 (<50) <220 5 8 10 >15
DZ23B22 V23 21.6 22.4 25 (<55) <220 5 8 10 >17
DZ23B24 V24 23.5 24.5 28 (<80) <220 5 8 10 >18
DZ23B27 V25 26.5 27.5 30 (<80) <250 5 8 10 >20
DZ23B30 V26 29.4 30.6 35 (<80) <250 5 8 10 >22.5
DZ23B33 V27 32.3 33.7 40 (<80) <250 5 8 10 >25
DZ23B36 V28 35.3 36.7 40 (<90) <250 5 8 10 >27
DZ23B39 V29 38.2 39.8 50 (<90) <300 5 10 12 >29
DZ23B43 V 30 42.1 43.9 60 (<100) <700 5 10 12 >32
DZ23B47 V 31 46.1 47.9 70 (<100) <750 5 10 12 >35
DZ23B51 V 32 50 52 70 (<100) <750 5 10 12 >38
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4Document Number 85765
Rev. 1.5, 08-Jul-04
VISHAY
DZ23-Series
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Figure 1. Forward characteristics
Figure 2. Admissible Power Dissipation vs. Ambient Temperature
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
18114
18115
°C
18116
Figure 4. Dynamic Resistance vs. Zener Current
Figure 5. Capacitance vs. Zener Voltage
Figure 6. Dynamic Resistance vs. Zener Current
18117
18118
18119
VISHAY
DZ23-Series
Document Number 85765
Rev. 1.5, 08-Jul-04
Vishay Semiconductors
www.vishay.com
5
Figure 7. Dynamic Resistance vs. Zener Current
Figure 8. Thermal Differential Resistance vs. Zener Voltage
Figure 9. Dynamic Resistance vs. Zener Voltage
18120
°C/W
18121
18122
Figure 10. Temperature Dependence of Zener Voltage vs. Zener
Voltage
Figure 11. Change of Zener Voltage vs. Junction Temperature
Figure 12. Temperature Dependence of Zener Voltage vs. Zener
Voltage
°C
18123
18124
°C
18125
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6Document Number 85765
Rev. 1.5, 08-Jul-04
VISHAY
DZ23-Series
Vishay Semiconductors
Figure 13. Change of Zener Voltage vs. Junction Temperature
Figure 14. Change of Zener voltage from turn-on up to the point of
thermal equilibrium vs. Zener voltage
Figure 15. Change of Zener voltage from turn-on up to the point of
thermal equilibrium vs. Zener voltage
18126
18127
18128
VISHAY
DZ23-Series
Document Number 85765
Rev. 1.5, 08-Jul-04
Vishay Semiconductors
www.vishay.com
7
18111
Figure 16. Breakdown Characteristics
18112
Figure 17. Breakdown Characteristics
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8Document Number 85765
Rev. 1.5, 08-Jul-04
VISHAY
DZ23-Series
Vishay Semiconductors
Package Di mens ions in mm (Inches)
18113
Figure 18. Breakdown Characteristics
2.0 (0.079)
0.9 (0.035)
0.95 (0.037)0.95 (0.037)
0.52 (0.020)
12
3
17418
2.8 (.110)
3.1 (.122)
0.4 (.016)
0.95 (.037)0.95 (.037)
0.1 (.004) max.
1.20(.047)
1.43 (.056)
0.4 (.016)0.4 (.016)
0.098 (.005)
0.175 (.007)
0.95 (.037)
1.15 (.045)
2.35 (.092)
2.6 (.102)
ISO Method E
Mounting Pad Layout
VISHAY
DZ23-Series
Document Number 85765
Rev. 1.5, 08-Jul-04
Vishay Semiconductors
www.vishay.com
9
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Prot ection Agency (EPA) in the U SA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to impr ove te chnical design
and may do so without further notic e.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
