BA282
THRU
BA283
35 Volt Band
Switching Diode
Features
•
Low Diff
erentia
l Forward
Resistance
•
Low Diode
Capacitan
ce
•
High Revers
e Impedance
Maximum Ratings
•
Junction Temperatur
e: 150
℃
•
Storage Temperatur
e: -55
℃
to +
150
℃
Electrical Characteristics @ 25
°
C Unless Otherw
ise Specified
Reverse Voltag
e
V
R
35V
Forward Curr
ent
I
F
100mA
Junction Ambient
R
thJA
350K/W
I=4mm , T
L
=constant
Maximum
Instantaneous
Forward Voltage
V
F
1.0V
I
FM
= 100mA;
Maximum DC
Reverse Curr
ent At
Rated DC B
locking
Voltage
I
R
50nA
V
R
=20V
Diode Capacita
nce
BA282~BA283
BA282
BA283
C
D
1.
5
0
pF
1
.
2
5
pF
1.
2
0
pF
V
R
=1V , f=100MHz
V
R
=3V , f=100MHz
Differential Forward
Resistan
ce
BA282
BA283
BA282
BA283
r
f
0.7
Ω
1.2
Ω
0.5
Ω
0.9
Ω
I
F
=3mA , f=200MHz
I
F
=10mA,f=200MHz
Reverse Imped
ance
z
r
100K
Ω
V
R
=1V , f=100MHz
D
O
-
35
A
B
C
D
D
Cathode
Mark
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
---
.166
---
4.2
B
---
.079
---
2.00
C
---
.020
---
.52
D
1.000
---
25.40
---
www
.
mccsemi
.com
Revision: 1 2003/12/03
omp
onents
20736 Marilla
Street Chatsworth
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